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NL188775C - METHOD FOR MANUFACTURING A SEMI-CONDUCTOR MULTIPLE WIRING LAYER SEPARATED BY INSULATING GLASS LAYERS. - Google Patents

METHOD FOR MANUFACTURING A SEMI-CONDUCTOR MULTIPLE WIRING LAYER SEPARATED BY INSULATING GLASS LAYERS.

Info

Publication number
NL188775C
NL188775C NLAANVRAGE8103007,A NL8103007A NL188775C NL 188775 C NL188775 C NL 188775C NL 8103007 A NL8103007 A NL 8103007A NL 188775 C NL188775 C NL 188775C
Authority
NL
Netherlands
Prior art keywords
semi
manufacturing
wiring layer
insulating glass
layer separated
Prior art date
Application number
NLAANVRAGE8103007,A
Other languages
Dutch (nl)
Other versions
NL8103007A (en
NL188775B (en
Original Assignee
Suwa Seikosha Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55115026A external-priority patent/JPS5739539A/en
Priority claimed from JP11502780A external-priority patent/JPS5739554A/en
Application filed by Suwa Seikosha Kk filed Critical Suwa Seikosha Kk
Publication of NL8103007A publication Critical patent/NL8103007A/en
Publication of NL188775B publication Critical patent/NL188775B/en
Application granted granted Critical
Publication of NL188775C publication Critical patent/NL188775C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
NLAANVRAGE8103007,A 1980-08-21 1981-06-22 METHOD FOR MANUFACTURING A SEMI-CONDUCTOR MULTIPLE WIRING LAYER SEPARATED BY INSULATING GLASS LAYERS. NL188775C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP55115026A JPS5739539A (en) 1980-08-21 1980-08-21 Semiconductor device
JP11502780 1980-08-21
JP11502780A JPS5739554A (en) 1980-08-21 1980-08-21 Multilayer wiring method
JP11502680 1980-08-21

Publications (3)

Publication Number Publication Date
NL8103007A NL8103007A (en) 1982-03-16
NL188775B NL188775B (en) 1992-04-16
NL188775C true NL188775C (en) 1992-09-16

Family

ID=26453643

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8103007,A NL188775C (en) 1980-08-21 1981-06-22 METHOD FOR MANUFACTURING A SEMI-CONDUCTOR MULTIPLE WIRING LAYER SEPARATED BY INSULATING GLASS LAYERS.

Country Status (4)

Country Link
DE (1) DE3132645A1 (en)
FR (1) FR2489042B1 (en)
GB (1) GB2082838B (en)
NL (1) NL188775C (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL109459C (en) * 1960-01-26
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
GB1114556A (en) * 1965-11-26 1968-05-22 Corning Glass Works Ceramic article and method of making it
US3475210A (en) * 1966-05-06 1969-10-28 Fairchild Camera Instr Co Laminated passivating structure
FR2024124A1 (en) * 1968-11-25 1970-08-28 Ibm
US3752701A (en) * 1970-07-27 1973-08-14 Gen Instrument Corp Glass for coating semiconductors, and semiconductor coated therewith
US3887733A (en) * 1974-04-24 1975-06-03 Motorola Inc Doped oxide reflow process
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
DE2606029C3 (en) * 1976-02-14 1980-03-06 Jenaer Glaswerk Schott & Gen., 6500 Mainz Composite passivation glass based on PbO - B2 O3 - (SiO2 - Al2 O3) with a thermal expansion coefficient (20-300 degrees C) of up to 75 times 10 7 / degrees C for silicon semiconductor components with
DE2611059A1 (en) * 1976-03-16 1977-09-29 Siemens Ag ENCLOSURE SEMI-CONDUCTOR COMPONENT WITH DOUBLE HEAT SINK
JPS583380B2 (en) * 1977-03-04 1983-01-21 株式会社日立製作所 Semiconductor device and its manufacturing method
JPS5425178A (en) * 1977-07-27 1979-02-24 Fujitsu Ltd Manufacture for semiconductor device

Also Published As

Publication number Publication date
FR2489042B1 (en) 1986-09-26
DE3132645C2 (en) 1991-01-10
FR2489042A1 (en) 1982-02-26
NL8103007A (en) 1982-03-16
GB2082838B (en) 1984-07-11
NL188775B (en) 1992-04-16
DE3132645A1 (en) 1982-06-09
GB2082838A (en) 1982-03-10

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

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