NL174304C - METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE. - Google Patents

METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE.

Info

Publication number: NL174304C
Authority: NL; Netherlands
Prior art keywords: manufacturing; field effect; control electrode; effect transistors; semiconductor circuit
Prior art date: 1976-09-08

Application number

NLAANVRAGE7709870,A

Other languages

Dutch (nl)

Other versions

NL174304B (en

NL7709870A (en

Original Assignee

Sanyo Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-09-08

Filing date

1977-09-08

Publication date

1984-05-16

1977-09-08 Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co

1978-03-10 Publication of NL7709870A publication Critical patent/NL7709870A/en

1983-12-16 Publication of NL174304B publication Critical patent/NL174304B/en

1984-05-16 Application granted granted Critical

1984-05-16 Publication of NL174304C publication Critical patent/NL174304C/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0167—Manufacturing their channels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

NLAANVRAGE7709870,A 1976-09-08 1977-09-08 METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE. NL174304C (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP10860276A JPS5333074A (en)	1976-09-08	1976-09-08	Production of complementary type insulated gate field effect semiconductor device

Publications (3)

Publication Number	Publication Date
NL7709870A NL7709870A (en)	1978-03-10
NL174304B NL174304B (en)	1983-12-16
NL174304C true NL174304C (en)	1984-05-16

Family

ID=14488949

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NLAANVRAGE7709870,A NL174304C (en)	1976-09-08	1977-09-08	METHOD FOR MANUFACTURING AN INTEGRATED SEMICONDUCTOR CIRCUIT COMPOSED OF COMPLEMENTARY FIELD EFFECT TRANSISTORS WITH AN INSULATED CONTROL ELECTRODE.

Country Status (3)

Country	Link
JP (1)	JPS5333074A (en)
DE (1)	DE2740549C2 (en)
NL (1)	NL174304C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS56118372A (en) *	1980-02-22	1981-09-17	Nec Corp	Semiconductor device
DE3133841A1 (en) *	1981-08-27	1983-03-17	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
US4462151A (en) *	1982-12-03	1984-07-31	International Business Machines Corporation	Method of making high density complementary transistors
EP0123384A1 (en) *	1983-02-25	1984-10-31	Western Digital Corporation	Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure
DE3314450A1 (en) *	1983-04-21	1984-10-25	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
DE3318213A1 (en) *	1983-05-19	1984-11-22	Deutsche Itt Industries Gmbh, 7800 Freiburg	METHOD FOR PRODUCING AN INTEGRATED INSULATION LAYER FIELD EFFECT TRANSISTOR WITH CONTACTS FOR THE GATE ELECTRODE SELF-ALIGNED
DE3330851A1 (en) *	1983-08-26	1985-03-14	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR PRODUCING HIGHLY INTEGRATED COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS
DE3340560A1 (en) *	1983-11-09	1985-05-15	Siemens AG, 1000 Berlin und 8000 München	METHOD FOR THE SIMULTANEOUS PRODUCTION OF FAST SHORT-CHANNEL AND VOLTAGE-RESISTANT MOS TRANSISTORS IN VLSI CIRCUITS
JPS6187375A (en) *	1985-10-18	1986-05-02	Nec Corp	Manufacturing method of semiconductor device
JPH03101264A (en) *	1990-05-07	1991-04-26	Nec Corp	Manufacture of complementary field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL7017066A (en) *	1970-11-21	1972-05-24
JPS51147184A (en) *	1975-06-11	1976-12-17	Toshiba Corp	Method of mawufacturing of mosic circuit device

1976
- 1976-09-08 JP JP10860276A patent/JPS5333074A/en active Pending
1977
- 1977-09-08 NL NLAANVRAGE7709870,A patent/NL174304C/en not_active IP Right Cessation
- 1977-09-08 DE DE2740549A patent/DE2740549C2/en not_active Expired

Also Published As

Publication number	Publication date
JPS5333074A (en)	1978-03-28
DE2740549A1 (en)	1978-03-09
NL174304B (en)	1983-12-16
NL7709870A (en)	1978-03-10
DE2740549C2 (en)	1986-02-20

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Legal Events

Date	Code	Title	Description
1987-03-16	SNR	Assignments of patents or rights arising from examined patent applications	Owner name: SANYO ELECTRIC CO., LTD.
1992-05-18	V1	Lapsed because of non-payment of the annual fee