[go: up one dir, main page]

NL159235B - Schakeling voorzien van een veldeffecthalfgeleiderinrichting. - Google Patents

Schakeling voorzien van een veldeffecthalfgeleiderinrichting.

Info

Publication number
NL159235B
NL159235B NL6802685.A NL6802685A NL159235B NL 159235 B NL159235 B NL 159235B NL 6802685 A NL6802685 A NL 6802685A NL 159235 B NL159235 B NL 159235B
Authority
NL
Netherlands
Prior art keywords
semiconductor device
field effect
effect semiconductor
circuit equipped
circuit
Prior art date
Application number
NL6802685.A
Other languages
English (en)
Other versions
NL6802685A (nl
NL159235C (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL6802685A publication Critical patent/NL6802685A/xx
Publication of NL159235B publication Critical patent/NL159235B/nl
Application granted granted Critical
Publication of NL159235C publication Critical patent/NL159235C/nl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NLAANVRAGE6802685,A 1967-02-27 1968-02-26 Schakeling voorzien van een veldeffecthalfgeleiderinrichting. NL159235C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1208767 1967-02-27

Publications (3)

Publication Number Publication Date
NL6802685A NL6802685A (nl) 1968-08-28
NL159235B true NL159235B (nl) 1979-01-15
NL159235C NL159235C (nl) 1982-05-17

Family

ID=11795783

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE6802685,A NL159235C (nl) 1967-02-27 1968-02-26 Schakeling voorzien van een veldeffecthalfgeleiderinrichting.

Country Status (5)

Country Link
US (1) US3590340A (nl)
DE (1) DE1639255C2 (nl)
FR (1) FR1565521A (nl)
GB (1) GB1209271A (nl)
NL (1) NL159235C (nl)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (nl) * 1969-09-05 1973-11-06
JPS5122794B1 (nl) * 1970-06-24 1976-07-12
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS5321838B2 (nl) * 1973-02-28 1978-07-05
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element
US4198696A (en) * 1978-10-24 1980-04-15 International Business Machines Corporation Laser cut storage cell
EP0072690A3 (en) * 1981-08-17 1983-11-09 Fujitsu Limited A mis device and a method of manufacturing it
US4455739A (en) * 1982-04-19 1984-06-26 Texas Instruments Incorporated Process protection for individual device gates on large area MIS devices
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
JPS6170475A (ja) * 1984-09-14 1986-04-11 Hitachi Ltd 集積回路用入出力共用回路
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
DE3681160D1 (de) * 1985-10-15 1991-10-02 American Telephone & Telegraph Schutz eines igfet integrierten schaltkreises vor elektrostatischer entladung.
DE3714647C2 (de) * 1987-05-02 1993-10-07 Telefunken Microelectron Integrierte Schaltungsanordnung
JP2569053B2 (ja) * 1987-06-26 1997-01-08 キヤノン株式会社 イメ−ジセンサ
US4835653A (en) * 1988-01-19 1989-05-30 Unisys Corporation ESD protection circuit employing channel depletion
KR920015549A (ko) * 1991-01-23 1992-08-27 김광호 반도체소자의 정전방전 보호장치
KR950007572B1 (ko) * 1992-03-31 1995-07-12 삼성전자주식회사 Esd 보호장치
TW445627B (en) * 1999-10-04 2001-07-11 Winbond Electronics Corp Electrostatic discharge buffer apparatus
DE10032389A1 (de) * 2000-07-06 2002-01-17 Philips Corp Intellectual Pty Empfänger mit Kapazitätsvariationsdiode
US6770938B1 (en) * 2002-01-16 2004-08-03 Advanced Micro Devices, Inc. Diode fabrication for ESD/EOS protection
KR100593444B1 (ko) * 2004-02-12 2006-06-28 삼성전자주식회사 모오스 바렉터를 갖는 반도체소자 및 그것을 제조하는 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit

Also Published As

Publication number Publication date
FR1565521A (nl) 1969-05-02
DE1639255B1 (de) 1971-12-09
DE1639255C2 (de) 1979-07-19
NL6802685A (nl) 1968-08-28
NL159235C (nl) 1982-05-17
US3590340A (en) 1971-06-29
GB1209271A (en) 1970-10-21

Similar Documents

Publication Publication Date Title
NL159235B (nl) Schakeling voorzien van een veldeffecthalfgeleiderinrichting.
CH466873A (de) Integrierte Halbleitervorrichtung
NL161906C (nl) Bevestigingsinrichting.
NL143497B (nl) Verpakkingsinrichting.
DK122357B (da) Elektrisk koblingsapparat.
CH496322A (de) Halbleitervorrichtung
AT300039B (de) Halbleitereinrichtung
NL142310B (nl) Elektroluminescentie-inrichting.
FR96113E (fr) Dispositif semi-conducteur.
NL152798B (nl) Transportinrichting.
CH485322A (de) Halbleitervorrichtung
AT278648B (de) Transportvorrichtung
NL164793C (nl) Lasinrichting.
NL159234B (nl) Halfgeleiderveldeffectinrichting.
ES339180A0 (es) Un dispositivo semiconductor.
AT306103B (de) Halbleitereinrichtung
CH468080A (de) Halbleitervorrichtung
DK119169B (da) Stabiliseret halvlederapparat.
AT297102B (de) Halbleitervorrichtung
CH500587A (de) Halbleitervorrichtung
NL160750C (nl) Lasinrichting.
AT280352B (de) Halbleitervorrichtung
NL152487B (nl) Extrusie-inrichting.
NL141614B (nl) Fluiduminrichting.
FI44639C (fi) Eletroninen laitteisto.

Legal Events

Date Code Title Description
NP1G Patent granted (not automatically) [patent specification modified]
V4 Discontinued because of reaching the maximum lifetime of a patent