NL1030431A1 - Resistant bias current generating circuit. - Google Patents

Resistant bias current generating circuit.

Info

Publication number: NL1030431A1
Authority: NL; Netherlands
Prior art keywords: generating circuit; bias current; current generating; resistant; resistant bias
Prior art date: 2004-11-15

Application number

NL1030431A

Other languages

Dutch (nl)

Other versions

NL1030431C2 (en

Inventor

Weicheng Zhang

Seung-Hoon Lee

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-11-15

Filing date

2005-11-15

Publication date

2006-05-16

2004-11-15 Priority claimed from KR1020040093100A external-priority patent/KR100596978B1/en

2005-11-15 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

2006-05-16 Publication of NL1030431A1 publication Critical patent/NL1030431A1/en

2007-10-30 Application granted granted Critical

2007-10-30 Publication of NL1030431C2 publication Critical patent/NL1030431C2/en

Classifications

- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Nonlinear Science (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Radar, Positioning & Navigation (AREA)
Automation & Control Theory (AREA)
Control Of Electrical Variables (AREA)
Amplifiers (AREA)

NL1030431A 2004-11-15 2005-11-15 Bias current generator for integrated circuit device, has proportional-to-absolute-temperature current generator with exclusively transistors that generates current that is proportional to operating temperature NL1030431C2 (en)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
KR1020040093100A KR100596978B1 (en)	2004-11-15	2004-11-15	Temperature-proportional current providing circuit, temperature-proportional current providing circuit and reference current providing circuit using the same
KR20040093100		2004-11-15
US11/225,587 US7227401B2 (en)	2004-11-15	2005-08-31	Resistorless bias current generation circuit
US22558705		2005-08-31

Publications (2)

Publication Number	Publication Date
NL1030431A1 true NL1030431A1 (en)	2006-05-16
NL1030431C2 NL1030431C2 (en)	2007-10-30

Family

ID=36626450

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL1030431A NL1030431C2 (en)	2004-11-15	2005-11-15	Bias current generator for integrated circuit device, has proportional-to-absolute-temperature current generator with exclusively transistors that generates current that is proportional to operating temperature

Country Status (2)

Country	Link
JP (1)	JP4491405B2 (en)
NL (1)	NL1030431C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4934396B2 (en) *	2006-10-18	2012-05-16	ルネサスエレクトロニクス株式会社	Semiconductor integrated circuit device
KR100912093B1 (en)	2007-05-18	2009-08-13	삼성전자주식회사	A temperature-proportional current generating circuit having a high temperature coefficient, a display device comprising the temperature-proportional current generating circuit and a method thereof
JP5326648B2 (en)	2009-02-24	2013-10-30	富士通株式会社	Reference signal generation circuit

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* Cited by examiner, † Cited by third party
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JPS5552611A (en) *	1978-10-11	1980-04-17	Nec Corp	Constant-current circuit
WO1992013387A1 (en) *	1991-01-22	1992-08-06	Information Storage Devices, Inc.	Integrated mosfet resistance and oscillator frequency control and trim methods and apparatus
US5200654A (en) *	1991-11-20	1993-04-06	National Semiconductor Corporation	Trim correction circuit with temperature coefficient compensation
JP3104509B2 (en) *	1993-12-27	2000-10-30	株式会社日立製作所	Constant current generating circuit and device using the same
JP2682470B2 (en) *	1994-10-24	1997-11-26	日本電気株式会社	Reference current circuit
DE19581856B3 (en) *	1994-11-09	2013-08-29	That Corp.	Temperature compensation for integrated circuit devices at the die level
JP3039611B2 (en) *	1995-05-26	2000-05-08	日本電気株式会社	Current mirror circuit
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JP2000077950A (en) *	1998-08-28	2000-03-14	Fujitsu Ltd	Stabilized current source and data receiving circuit
KR100278663B1 (en) *	1998-12-18	2001-02-01	윤종용	Bias Circuit of Semiconductor Integrated Circuits
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JP2001092545A (en) *	1999-09-24	2001-04-06	Mitsubishi Electric Corp	Self-bias circuit
KR100368982B1 (en) *	1999-11-30	2003-01-24	주식회사 하이닉스반도체	CMOS reference circuit
JP2002270768A (en) *	2001-03-08	2002-09-20	Nec Corp	Cmos reference voltage circuit
JP3818925B2 (en) *	2001-12-27	2006-09-06	富山県	MOS type reference voltage generator
JP2004030041A (en) *	2002-06-24	2004-01-29	Sony Corp	Current source circuit
FR2842317B1 (en) *	2002-07-09	2004-10-01	Atmel Nantes Sa	REFERENCE VOLTAGE SOURCE, TEMPERATURE SENSOR, TEMPERATURE THRESHOLD DETECTOR, CHIP AND CORRESPONDING SYSTEM
US6664847B1 (en) *	2002-10-10	2003-12-16	Texas Instruments Incorporated	CTAT generator using parasitic PNP device in deep sub-micron CMOS process

2005
- 2005-11-08 JP JP2005324173A patent/JP4491405B2/en active Active
- 2005-11-15 NL NL1030431A patent/NL1030431C2/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
NL1030431C2 (en)	2007-10-30
JP4491405B2 (en)	2010-06-30
JP2006146906A (en)	2006-06-08

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Legal Events

Date	Code	Title	Description
2006-07-03	AD1A	A request for search or an international type search has been filed
2007-11-01	RD2N	Patents in respect of which a decision has been taken or a report has been made (novelty report)	Effective date: 20070829
2008-01-02	PD2B	A search report has been drawn up
2010-06-23	V1	Lapsed because of non-payment of the annual fee	Effective date: 20100601