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KR980002311A - 결정성장 제어방법 및 그 장치 - Google Patents

결정성장 제어방법 및 그 장치 Download PDF

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KR980002311A
KR980002311A KR1019970027741A KR19970027741A KR980002311A KR 980002311 A KR980002311 A KR 980002311A KR 1019970027741 A KR1019970027741 A KR 1019970027741A KR 19970027741 A KR19970027741 A KR 19970027741A KR 980002311 A KR980002311 A KR 980002311A
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variables
line simulation
setting
simulation
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KR100206520B1 (ko
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도른베르게르 에리히
암몬 빌프리드폰
욀크루그 한스
바스마이에르 프란즈
두프레트 프란코이스
베로츠 빈센트
보개르트 나탈리판덴
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알. 뢰머, 게르트 켈러
와커-실트로닉 게셀샤프트 퓌르 할브라이테르마테리아리엔 아게
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feedback Control In General (AREA)

Abstract

본 발명은 결정성장제어방법 빛 그 장치에 관한 것으로, 그 성장은 가측변수와 비가측변수를 설정시켜 제어한다.
그 방법은 다음 스텝으로 이루어진다.
변수의 환산수(reduced number)와 함께 작동하는 온-라인 시물레이션 소프트웨어(on-line simulation software)를 설정시켜, 프로젝트 알고리즘(projection algorithm)의 사용에 의해 변수를 환산시키고; 오프-라인 사전계산 변수의 값을 기억하는 데이타뱅크(data bank)를 발생시켜 온-라인 시물레이션 소프트웨어를 증속시키고; 온라인 시뮬레이션에 의해 예측되는 결과를 오프라인 시뮬레이션과 측정에 의해 얻은 결과로 조정시켜 온라인 시뮬레이션 소프트웨어를 조정하고(tuning); 온라인 옵서버(on-line observer)로서 증속시켜 조정하는 온라인 시물레이션 소프트웨어를 사용하는 제어루프(comtrol loop)를 설정시켜, 실시간에 변수중 적어도 하나를 제어한다.

Description

결정성장 제어방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 가측변수와 비가측 변수를 설정시켜 성장을 결정하는 결정의 성장을 제어하는 방법에 있어서, 변수의 환산수로 작동하는 온-라인 시뮬레이션 소프트웨어(on-line simulation software)를 설정하여 변수의 환산을프로젝트 알고리즘(projection algorithm)의 사용에 의해 실행하고; 오프-라인 사전계산변수(off-linepreculcalated vuriables)의 값을 기억하는 데이타뱅크(data banks)를 발생시켜 온-라인 시뮬레이션 소프트웨어를 중속(speed up)시키며; 온-라인 시뮬레이션에 의해 예측한 결과를 오프-라인 시뮬레이션과 측정에의해 얻어진 결과로 조정시켜 온-라인 시뮬레이션 소프트웨어를 동조(tuning)하고; 온-라인 옵서버(on-lineobserver)로서 증속 및 동조 온-라인 시뮬레이션 소프트웨어(speed up and tuned on-line simnlationsoftwaer)를 사용하는 제어루프(control loop)를 설정시켜 실시간에서 변수중 적어도 하나를 제어함을 특징으로 하는 방법.
  2. 제1항에 있어서, 가측변수(measurable variabld)와 비가측변수(non-measurable variable)는 인발속도, 히터출력, 결정에서의 온도분포, 용융물흐름패턴, 석영제도가니의 내면에서의 온도분포, 용융물표면상에서의 온도분표, 고체/액체 경계면 형상 및 SiO의 증발로 이루어지는 그룹에서 선택함을 특징으로 하는 방법.
  3. 결정의 성장을 제어하는 장치에 있어서, a) 단결정을 용융물(melt)에서 인발하는 결정인발수단(crystal pulling means)과, b) 결정인발수단을 제어하는 프로세스제어수단과, c) 프로세스제어수단을 구성시켜 파라미터의 온-라인 예측치가 그 결정의 인발에 영향을 주도록 하는 온-라인 시뮬레이션수단(on-line simulation means)과, d) 결정의 인발에 영향을 주는 파라미터의 온-라인 예측치와 오프-라인 계산치의 데이타를 제공시켜 온-라인 시물레이션 수단을 증속시키는 데이타 뱅크수단(date bank means)과, e) 제어수단, 온-라인 시뮬레이션 수단 및 파라미터의 오프-라인 계산치가 결정의 인발에 영향을 주는 데이타뱅크수단을 구비한 오프-라인 시물레이션 수단(off-line simulation mearns)으로 구성되는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970027741A 1996-06-27 1997-06-26 결정성장 제어방법 및 그 장치 Expired - Fee Related KR100206520B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96110356.1 1996-06-27
EP96110356A EP0821082B1 (en) 1996-06-27 1996-06-27 Process and apparatus for controlling the growth of a crystal

Publications (2)

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KR980002311A true KR980002311A (ko) 1998-03-30
KR100206520B1 KR100206520B1 (ko) 1999-07-01

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Country Link
US (1) US5868831A (ko)
EP (1) EP0821082B1 (ko)
JP (1) JP3097838B2 (ko)
KR (1) KR100206520B1 (ko)
DE (1) DE69601424T2 (ko)
MY (1) MY133688A (ko)
SG (1) SG50850A1 (ko)

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US6203611B1 (en) * 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
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EP2177648B1 (en) * 2002-11-12 2013-02-13 MEMC Electronic Materials, Inc. Process for preparing single crystal silicon using crucible rotation to control temperature gradient
JP4701738B2 (ja) * 2005-02-17 2011-06-15 株式会社Sumco 単結晶の引上げ方法
US7959732B1 (en) 2005-06-17 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Apparatus and method for monitoring and controlling crystal growth
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JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
KR100901343B1 (ko) * 2007-07-23 2009-06-05 (주)실리콘화일 결정질 반도체 박막 제조 방법
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DE102013202155A1 (de) * 2013-02-08 2014-08-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Prüfen oder Identifizieren einer Modellstruktur
DE102016006453B4 (de) 2016-05-24 2021-09-02 Technische Universität Ilmenau Verfahren zur automatischen Regelung eines Phasenumwandlungsvorganges und seine Verwendung
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JP6604338B2 (ja) * 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
CN109680329A (zh) * 2018-07-26 2019-04-26 天津中环领先材料技术有限公司 基于熔区高度和晶体角度控制区熔晶体生长方法及系统
CN111235626A (zh) * 2019-10-30 2020-06-05 弘元新材料(包头)有限公司 一种提高cz单晶炉调温效率的调温方法
CN113344439B (zh) * 2021-06-29 2024-04-26 蓝思系统集成有限公司 一种晶体生长控制方法、装置、系统及可读存储介质
CN118028966A (zh) * 2024-02-22 2024-05-14 山东大学 一种用于生长晶体的智能晶体生长设备

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EP0821082A1 (en) 1998-01-28
KR100206520B1 (ko) 1999-07-01
US5868831A (en) 1999-02-09
EP0821082B1 (en) 1999-01-20
JPH1072300A (ja) 1998-03-17
MY133688A (en) 2007-11-30
DE69601424T2 (de) 1999-06-02
SG50850A1 (en) 1998-07-20
JP3097838B2 (ja) 2000-10-10
DE69601424D1 (de) 1999-03-04

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