[go: up one dir, main page]

KR970077159A - Semiconductor Low Pressure Chemical Vapor Deposition Device - Google Patents

Semiconductor Low Pressure Chemical Vapor Deposition Device Download PDF

Info

Publication number
KR970077159A
KR970077159A KR1019960015059A KR19960015059A KR970077159A KR 970077159 A KR970077159 A KR 970077159A KR 1019960015059 A KR1019960015059 A KR 1019960015059A KR 19960015059 A KR19960015059 A KR 19960015059A KR 970077159 A KR970077159 A KR 970077159A
Authority
KR
South Korea
Prior art keywords
vacuum chamber
chemical vapor
vapor deposition
pressure chemical
wafer
Prior art date
Application number
KR1019960015059A
Other languages
Korean (ko)
Inventor
박해수
Original Assignee
문정환
Lg 반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체주식회사 filed Critical 문정환
Priority to KR1019960015059A priority Critical patent/KR970077159A/en
Publication of KR970077159A publication Critical patent/KR970077159A/en

Links

Abstract

본 발명은 반도체 저압화학기상증착장치에 관한 것으로, 종래에는 증착공정을 진행하기 위하여 웨이퍼가 수납된 보트를 내, 외측튜브의 내부로 이동시 웨이퍼에 산화막이 발생하여 실리콘 막의 질이 저하되는 문제점이 있었다. 본 발명 반도체 저압화학기상증착장치는 내, 외측튜브의 하부에 튜브셔터(TUBE SHUTTER)를 복개가능하도록 설치하여 내, 외측튜브의 내부에 존재하는 잔류산소 또는 습기 등을 제거하고, 내,외측튜브의 하부에는 튜브셔터, 보트, 플랜지를 감싸도록 진공챔버를 설치하여 펌핑수단으로 진공챔버의 내부에 존재하는 잔류산소 또는 습기 등을 제거할 수 있도록 함으로서, 웨이퍼의 산화막 증착을 방지하게되어 산화막 증착으로 인한 웨이퍼의 품질저하를 방지하는 효과가 있다.The present invention relates to a semiconductor low-pressure chemical vapor deposition apparatus, and in the related art, there is a problem that an oxide film is formed on a wafer when a boat containing a wafer is moved to the inside of an outer tube to perform a deposition process, . In the semiconductor low-pressure chemical vapor deposition apparatus according to the present invention, a tube shutter is installed in a lower portion of inner and outer tubes to remove residual oxygen or moisture existing inside the outer tube, A vacuum chamber is provided at a lower portion of the vacuum chamber so as to enclose the tube shutter, the boat, and the flange, so that residual oxygen or moisture existing in the vacuum chamber can be removed by the pumping means, It is possible to prevent deterioration of the quality of the wafer caused by the wafer.

Description

반도체 저압화학기상증착장치Semiconductor Low Pressure Chemical Vapor Deposition Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명 반도체 저압화학기상증착장치의 구성을 보인 개략구성도.FIG. 2 is a schematic view showing the structure of a semiconductor low-pressure chemical vapor deposition apparatus according to the present invention. FIG.

Claims (3)

내,외측튜브의 하면에 복개가능하도록 설치되어 내,외측튜브의 내부를 진공상태로 유지하기 위한 튜브셔터와, 상기 내, 외측튜브의 하방으로 설치되어 튜브셔터, 보트, 플랜지를 감싸도록 설치하기 위한 진공챔버와, 상기 진공 챔버의 내부를 진공상태로 유지하기 위한 펌핑수단을 포함하여서 구성된 것을 특징으로 하는 반도체 저압화학기상증착장치.A tube shutter installed so as to be able to cover the inner and outer tubes in a vacuum state, and a tube shutter installed below the inner and outer tubes to surround the tube shutter, the boat and the flange. And a pumping means for maintaining the inside of the vacuum chamber in a vacuum state. 제1항에 있어서, 상기 펌핑수단은 상기 진공챔버의 공기를 외부로 펑핑하기 위한 진공펌프와, 상기 진공챔버와 진공펌프를 연결하는 배기라인과, 상기 진공챔버의 진공상태를 측정하기 위한 진공측정기와, 상기 배기라인을 통과하는 공기의 흐름을 열거나 닫기 위한 게이트 밸브를 구성된 것을 특징으로 하는 반도체 저압화학기상증착장치.2. The vacuum chamber measuring apparatus according to claim 1, wherein the pumping means comprises: a vacuum pump for pumping air out of the vacuum chamber; an exhaust line connecting the vacuum chamber and the vacuum pump; And a gate valve for opening or closing the flow of air passing through the exhaust line. 제1항에 있어서, 상기 내,외측튜브에 연결된 배기라인과 상기 진공챔버에 연결된 배기라인을 연결하는 연결라인을 설치하고, 그 연결라인 상에 배기시 내,외측튜브와 진공챔버의 내부에 잔류하는 원소의 양을 측정하기 위한 잔류원소 분석기를 설치한 것을 특징으로 하는 반도체 저압화학기상증착장치.The vacuum chamber according to claim 1, further comprising a connection line connecting an exhaust line connected to the inner and outer tubes and an exhaust line connected to the vacuum chamber, And a residual element analyzer for measuring an amount of the element. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015059A 1996-05-08 1996-05-08 Semiconductor Low Pressure Chemical Vapor Deposition Device KR970077159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015059A KR970077159A (en) 1996-05-08 1996-05-08 Semiconductor Low Pressure Chemical Vapor Deposition Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015059A KR970077159A (en) 1996-05-08 1996-05-08 Semiconductor Low Pressure Chemical Vapor Deposition Device

Publications (1)

Publication Number Publication Date
KR970077159A true KR970077159A (en) 1997-12-12

Family

ID=66219285

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015059A KR970077159A (en) 1996-05-08 1996-05-08 Semiconductor Low Pressure Chemical Vapor Deposition Device

Country Status (1)

Country Link
KR (1) KR970077159A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100926994B1 (en) * 2001-05-14 2009-11-17 셈코 엔지니어링 에스에이 Silicon Wafer Processing Method And Apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100926994B1 (en) * 2001-05-14 2009-11-17 셈코 엔지니어링 에스에이 Silicon Wafer Processing Method And Apparatus

Similar Documents

Publication Publication Date Title
EP0356877B1 (en) Process for controlling the tightness of a test container using a tracer gas
US5205844A (en) Degassing apparatus
ID16032A (en) KATUB CIRCUIT DISTRIBUTION SYSTEM FOR ULTRA GAS WITH HIGH PURE
ID16031A (en) ULTRA GAS DISTRIBUTION COMPONENTS WITH HIGH Purity
JP4037954B2 (en) Tracer gas leak detector
RU1809919C (en) Device for detecting leaks using indicator gas
JPH0594745U (en) Leak detector for airtight container
KR970077159A (en) Semiconductor Low Pressure Chemical Vapor Deposition Device
KR100455782B1 (en) Semiconductor device manufacturing apparatus in which cold trap part is improved
KR200195123Y1 (en) Vacuum shut-off valve device for semiconductor process chamber
KR890017389A (en) Filtration device for exhaust gas flow in vapor deposition system
JPH06160254A (en) Gas detector
KR20070037880A (en) Vacuum Exhaust Device
US4254936A (en) Butterfly valve
JPH05332285A (en) Vacuum pump
JPH06314678A (en) Hermetically sealed cleaning apparatus
KR200167736Y1 (en) Phase separation exhaust duct for semiconductor production line
KR970071997A (en) Vacuum device with vacuum system
JPH07231Y2 (en) 2-stage deoxidizer
KR950025865A (en) Barrel Photoreceptor Removal Device
KR960005905B1 (en) Fuel tank
JPH033101B2 (en)
KR930011136A (en) Wafer storage method above atmospheric pressure and its device
KR19980075763A (en) Demister of exhaust equipment for semiconductor device manufacturing
KR100234529B1 (en) Safety apparatus of cro vacuum pump

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19960508

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19960508

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19981224

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19990429

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19981224

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I