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KR970052416A - Method of forming contact window of semiconductor device - Google Patents

Method of forming contact window of semiconductor device Download PDF

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Publication number
KR970052416A
KR970052416A KR1019950062136A KR19950062136A KR970052416A KR 970052416 A KR970052416 A KR 970052416A KR 1019950062136 A KR1019950062136 A KR 1019950062136A KR 19950062136 A KR19950062136 A KR 19950062136A KR 970052416 A KR970052416 A KR 970052416A
Authority
KR
South Korea
Prior art keywords
contact window
semiconductor device
photoresist
dry etching
forming
Prior art date
Application number
KR1019950062136A
Other languages
Korean (ko)
Inventor
이철승
이희목
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950062136A priority Critical patent/KR970052416A/en
Publication of KR970052416A publication Critical patent/KR970052416A/en

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Abstract

본 발명은 반도체 소자의 접촉창 형성 방법에 있어서; 콘택 마스크를 사용한 층간절연물의 건식식각으로 하부전도층을 노출시키는 단계; 전체 구조 상부에 감광막을 코팅하는 단계; 상기 건식식각 부위를 포함하되 그 보다는 소정 크기만큼 큰 부위의 상기 감광막을 노광 및 현상하여 제거하는 단계; 노출된 상기 층간절연막을 건식식각하는 단계; 잔류하는 상기 감광막을 제거하여 접촉창을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 접촉장 형성 방법에 관한 것으로, 고집적화 되어가는 반도체 소자의 미세 접촉창 형성시 접촉창의 에스펙트 비 및 프로파일의 향상으로 소자의 신뢰성을 향상시킨다.The present invention provides a method for forming a contact window of a semiconductor device; Exposing the lower conductive layer by dry etching of the interlayer insulator using a contact mask; Coating a photoresist on the entire structure; Exposing and developing the photoresist film, including the dry etching portion, but larger than a predetermined size, to remove the photoresist; Dry etching the exposed interlayer dielectric layer; A method of forming a contact field of a semiconductor device, the method comprising: forming a contact window by removing the remaining photoresist film. Improvements improve device reliability.

Description

반도체 소자의 접촉창 형성 밥법Contact Window Formation Method for Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 일실시예에 따른 접촉창 형성 공정도.1 is a contact window forming process according to an embodiment of the present invention.

Claims (3)

반도체 소자의 접촉창 형성 방법에 있어서; 콘택 마스크를 사용한 층간절연물의 건식식각으로 하부전도층을 노출시키는 단계; 전체 구조 상부에 감광막을 코팅하는 단계; 상기 건식식각 부위를 포함하되 그 보다는 소정 크기만큼 큰 부위의 상기 감광막을 노광 및 현상하여 제거하는 단계; 노출된 상기 층간절연막을 건식식각하는 단계; 잔류하는 상기 감광막을 제거하여 접촉창을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 접촉장 형성 방법.A method for forming a contact window of a semiconductor device; Exposing the lower conductive layer by dry etching of the interlayer insulator using a contact mask; Coating a photoresist on the entire structure; Exposing and developing the photoresist film, including the dry etching portion, but larger than a predetermined size, to remove the photoresist; Dry etching the exposed interlayer dielectric layer; Forming a contact window by removing the remaining photoresist. 제1항에 있어서; 상기 감광막의 코팅 두께로 상기 접촉창의 깊이를 조절하는 것을 특징으로 하는 반도체 소자의 접촉장 형성 방법.The method of claim 1; The contact field forming method of the semiconductor device, characterized in that for controlling the depth of the contact window by the coating thickness of the photosensitive film. 제1항에 있어서; 상기 노광 에너지로 상기 접촉창의 깊이를 조절하는 것을 특징으로 하는 반도체 소자의 접촉장 형성 방법.The method of claim 1; And a depth of the contact window is controlled by the exposure energy. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950062136A 1995-12-28 1995-12-28 Method of forming contact window of semiconductor device KR970052416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950062136A KR970052416A (en) 1995-12-28 1995-12-28 Method of forming contact window of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950062136A KR970052416A (en) 1995-12-28 1995-12-28 Method of forming contact window of semiconductor device

Publications (1)

Publication Number Publication Date
KR970052416A true KR970052416A (en) 1997-07-29

Family

ID=66621767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950062136A KR970052416A (en) 1995-12-28 1995-12-28 Method of forming contact window of semiconductor device

Country Status (1)

Country Link
KR (1) KR970052416A (en)

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19951228

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid