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KR970051100A - Internal power supply voltage generation circuit of semiconductor memory device - Google Patents

Internal power supply voltage generation circuit of semiconductor memory device Download PDF

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Publication number
KR970051100A
KR970051100A KR1019950065880A KR19950065880A KR970051100A KR 970051100 A KR970051100 A KR 970051100A KR 1019950065880 A KR1019950065880 A KR 1019950065880A KR 19950065880 A KR19950065880 A KR 19950065880A KR 970051100 A KR970051100 A KR 970051100A
Authority
KR
South Korea
Prior art keywords
power supply
supply voltage
internal power
driving
differential comparator
Prior art date
Application number
KR1019950065880A
Other languages
Korean (ko)
Inventor
박필순
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950065880A priority Critical patent/KR970051100A/en
Publication of KR970051100A publication Critical patent/KR970051100A/en

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  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

본 발명은 반도체 메모리 장치의 내부전원전압 발생회로에 관한 것으로서, 특히 외부전원전압에 비례하는 기준전압과 내부전원전압을 비교하는 차동비교기 ; 차동비교기의 출력에 응답하여 외부전원전압으로 내부전원 전압을 구동하는 구동수단; 외부전원전압에 연결되고, 상기 차등비교기에 정상상태에서는 일정한 제1구동전류를 제공하고 상기 내부전원전압이 정상레벨로 회복되는 시점에서는 상기 구동수단을 빠른 시간내로 턴오프시키기 위한 제2구동전류를 추가로 제공하는 전류소스수단; 및 접지전원전압에 연결되고, 상기 차동비교기로부터 액티브 사이클에서는 일정한 제1구동전류를 싱크하고 상기 내부전원전압이 강하되는 시점에서는 상기 구동수단을 빠른 시간내로 턴온시키기 위한 제2구동전류를 추가로 싱크하는 전류싱크수단을 구비한 것을 특징으로 한다.The present invention relates to an internal power supply voltage generation circuit of a semiconductor memory device, and in particular, a differential comparator for comparing the internal power supply voltage with a reference voltage proportional to the external power supply voltage; Driving means for driving an internal power supply voltage with an external power supply voltage in response to an output of the differential comparator; Connected to an external power supply voltage and providing a constant first driving current to the differential comparator in a normal state, and a second driving current for turning off the driving means within a short time when the internal power supply voltage returns to a normal level. Further provided current source means; And a second driving current connected to a ground power supply voltage and sinking a constant first driving current in an active cycle from the differential comparator, and turning on the driving means in a short time when the internal power supply voltage drops. Characterized in that it comprises a current sink means to.

따라서, 본 발명에서는 내부 메모리 회로의 액티브 사이클에서 동작시 내부전원전압의 강하로 인한 트러블을 해결할 수 있다.Therefore, in the present invention, troubles due to a drop in the internal power supply voltage when operating in an active cycle of the internal memory circuit can be solved.

Description

반도체 메모리 장치의 내부 전원전압 발생회로Internal power supply voltage generation circuit of semiconductor memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 반도체 메모리 장치의 내부전원전압 발생회로의 구성을 나타낸 회로도.2 is a circuit diagram showing a configuration of an internal power supply voltage generation circuit of a semiconductor memory device according to the present invention.

Claims (1)

외부전원전압에 비례하는 기준전압과 내부전원전압을 비교하는 차등비교기; 상기 차등비교기의 출력에 응답하여 외부전원전압으로 내부전원전압을 구동하는 구동수단; 외부전원전압에 연결되고, 상기 차동비교기에 정상상태에서는 일정한 제1구동전류를 제공하고 상기 내부전원전압이 정상레벨로 회복되는 시점에서는 상기 구동수단을 빠른 시간내로 턴오프시키기 위한 제2구동전류를 추가로 제공하는 전류소스수단; 및 접지전원전압에 연결되고, 상기 차등비교기로부터 액티브 사이클에서는 일정한 제1구동전류를 싱크하고 상기 내부전원전압이 강하되는 시점에서는 상기 구동수단을 빠른 시간내로 턴온시키기 위한 제2구동전류를 추가로 싱크하는 전류 싱크수단을 구비한 것을 특징으로 하는 반도체 메모리 장치의 내부전원전압 발생회로.A differential comparator for comparing a reference voltage proportional to an external power supply voltage and an internal power supply voltage; Driving means for driving an internal power supply voltage to an external power supply voltage in response to an output of the differential comparator; Connected to an external power supply voltage and providing a constant first driving current to the differential comparator in a normal state and a second driving current for turning off the driving means quickly within a time point when the internal power supply voltage returns to a normal level. Further provided current source means; And a second driving current connected to a ground power supply voltage and sinking a constant first driving current in an active cycle from the differential comparator, and turning on the driving means within a short time when the internal power supply voltage drops. An internal power supply voltage generation circuit of a semiconductor memory device, comprising a current sink means. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950065880A 1995-12-29 1995-12-29 Internal power supply voltage generation circuit of semiconductor memory device KR970051100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065880A KR970051100A (en) 1995-12-29 1995-12-29 Internal power supply voltage generation circuit of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065880A KR970051100A (en) 1995-12-29 1995-12-29 Internal power supply voltage generation circuit of semiconductor memory device

Publications (1)

Publication Number Publication Date
KR970051100A true KR970051100A (en) 1997-07-29

Family

ID=66624244

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950065880A KR970051100A (en) 1995-12-29 1995-12-29 Internal power supply voltage generation circuit of semiconductor memory device

Country Status (1)

Country Link
KR (1) KR970051100A (en)

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Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19951229

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid