[go: up one dir, main page]

KR970051082A - Internal power supply voltage boost circuit - Google Patents

Internal power supply voltage boost circuit Download PDF

Info

Publication number
KR970051082A
KR970051082A KR1019950057149A KR19950057149A KR970051082A KR 970051082 A KR970051082 A KR 970051082A KR 1019950057149 A KR1019950057149 A KR 1019950057149A KR 19950057149 A KR19950057149 A KR 19950057149A KR 970051082 A KR970051082 A KR 970051082A
Authority
KR
South Korea
Prior art keywords
vpp
oscillator
active
detection means
control signal
Prior art date
Application number
KR1019950057149A
Other languages
Korean (ko)
Inventor
윤세승
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057149A priority Critical patent/KR970051082A/en
Publication of KR970051082A publication Critical patent/KR970051082A/en

Links

Landscapes

  • Dram (AREA)

Abstract

액티브용 검출기의 DC 전류 성분을 최소화하여 소비전류를 감소시킬 수 있는 내부전원전압 승압회로가 개시된다. 본 발명의 내부전원전압 승압회로는, 외부 제어신호(RASB)에 의해 액티브 오실레이터 제어신호를 발생시키기 위한 액티브 오실레이터 제어신호 생성수단과, 상기 액티브 오실레이터 제어신호를 입력으로 하여 일정한 주기를 갖는 출력을 발생시키는 오실레이터(oscillator)와, 상기 오실레이터의 출력과 Vpp 레벨을 입력으로 하여 스탠바이 검출수단을 인에이블 시키는 신호를 발생하기 위한 Vpp 액티브 검출수단과, 상기 액티브 검출수단의 출력과 Vpp 레벨을 입력으로 하여, Vpp 오실레이터를 구동시키기 위한 Vpp 스탠바이 검출수단과, 상기 Vpp 오실레이터의 출력을 받아 구동되는 Vpp 제너레이터(Generator)로 구성된다.An internal power supply voltage boost circuit capable of minimizing a DC current component of an active detector to reduce current consumption is disclosed. The internal power supply voltage boosting circuit according to the present invention generates active oscillator control signal generating means for generating an active oscillator control signal by an external control signal (RASB), and an output having a predetermined period as the input of the active oscillator control signal. An oscillator to be input, an output of the oscillator and a Vpp level as inputs, Vpp active detection means for generating a signal for enabling a standby detection means, and an output and Vpp level of the active detection means as inputs, And a Vpp standby detection means for driving the Vpp oscillator, and a Vpp generator driven by the output of the Vpp oscillator.

Description

내부 전원전압 승압 회로Internal power supply voltage boost circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 7 도는 본 발명에 의한 내부 전원전압 승압회로의 블록도.7 is a block diagram of an internal power supply voltage boosting circuit according to the present invention.

제 8 도는 본 발명에 의한 액티브 오실레이터 제어수단의 상세 회로도.8 is a detailed circuit diagram of an active oscillator control means according to the present invention.

제 9 도는 본 발명에 의한 오실레이터의 상세 회로도.9 is a detailed circuit diagram of an oscillator according to the present invention.

제 11 도는 본 발명에 의한 내부 전원전압 승압회로의 타이밍도.11 is a timing diagram of an internal power supply voltage boosting circuit according to the present invention.

Claims (2)

내부전원전압 승압회로를 구비한 반도체 메모리 장치에 있어서, 외부 제어신호(RASB)에 의해 액티브 오실레이터 제어신호를 발생시키기 위한 액티브 오실레이터 제어신호 생성수단; 상기 액티브 오실레이터 제어신호를 입력으로 하여 일정한 주기를 갖는 출력을 발생시키는 오실레이터(oscillator); 상기 오실레이터의 출력과 Vpp 레벨을 입력으로 하여 스탠바이 검출수단을 인에이블 시키는 신호를 발생하기 위한 Vpp 액티브 검출수단; 상기 액티브 검출수단의 출력과 Vpp 레벨을 입력으로 하여, Vpp 오실레이터를 구동시키기 위한 Vpp 스탠바이 검출수단; 및 상기 Vpp 오실레이터의 출력을 받아 구동되는 Vpp 제너레이터(Generator)를 구비하는 것을 특징으로 하는 내부 전원전압 승압회로.A semiconductor memory device having an internal power supply voltage boosting circuit, comprising: active oscillator control signal generation means for generating an active oscillator control signal by an external control signal (RASB); An oscillator for generating an output having a predetermined period as an input of the active oscillator control signal; Vpp active detection means for generating a signal for enabling the standby detection means by inputting the output of the oscillator and the Vpp level; Vpp standby detection means for driving the Vpp oscillator with the output of the active detection means and the Vpp level as inputs; And a Vpp generator driven by the output of the Vpp oscillator. 제 1 항에 있어서, 상기 액티브 검출수단은 상기 스탠바이 검출수단 보다 빠른 응답시간(response time)을 갖는 것을 특징으로 하는 내부전원전압 승압회로.2. The internal power supply voltage boosting circuit according to claim 1, wherein said active detection means has a response time faster than said standby detection means. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057149A 1995-12-26 1995-12-26 Internal power supply voltage boost circuit KR970051082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057149A KR970051082A (en) 1995-12-26 1995-12-26 Internal power supply voltage boost circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057149A KR970051082A (en) 1995-12-26 1995-12-26 Internal power supply voltage boost circuit

Publications (1)

Publication Number Publication Date
KR970051082A true KR970051082A (en) 1997-07-29

Family

ID=66618365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057149A KR970051082A (en) 1995-12-26 1995-12-26 Internal power supply voltage boost circuit

Country Status (1)

Country Link
KR (1) KR970051082A (en)

Similar Documents

Publication Publication Date Title
KR970029752A (en) Internal boost power generation circuit of semiconductor memory device
KR950021481A (en) Internal step-down power circuit
KR910019056A (en) Substrate Voltage Generation Circuit in Semiconductor Device with Internal Step-Down Power Supply Voltage
KR910019048A (en) Semiconductor integrated circuit device
KR940012396A (en) Step-down circuit of power supply voltage
KR940003017A (en) Semiconductor integrated circuit
KR960025746A (en) Power Boost Circuit of Semiconductor Memory Device
KR920018758A (en) Integrated semiconductor circuit
KR970067346A (en) Dynamic Random Access Memory
KR950004271A (en) Power supply voltage detection circuit of semiconductor memory device
KR970051107A (en) Internal power supply
KR960025707A (en) Step-up circuits used in active cycles of semiconductor memory devices
KR960025706A (en) DC voltage generation circuit to reduce power consumption
KR970063246A (en) Semiconductor memory device in which the magnitude of the substrate voltage can be set in accordance with the mode
KR960019299A (en) Semiconductor memory device having boosted potential generation function
KR970051082A (en) Internal power supply voltage boost circuit
KR970023355A (en) High voltage generator
KR970023359A (en) Bootstrap Circuit for Wordline Driver
KR960035625A (en) Back bias voltage generation circuit of semiconductor memory device
KR970053974A (en) Voltage generating circuits and semiconductor devices
KR970012688A (en) Supply Voltage Control Circuit of Semiconductor Memory Device to Prevent Latch-Up
KR970051098A (en) High Voltage Generation Circuit of Semiconductor Device
KR970008158A (en) Semiconductor memory device having an internal boost power supply circuit having an external power supply voltage sensor
KR970017591A (en) Back bias voltage control method of semiconductor memory device
KR960042724A (en) Internal Power Supply Voltage Boost Circuit in Semiconductor Memory Devices

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19951226

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid