[go: up one dir, main page]

KR970048988A - Contact mask - Google Patents

Contact mask Download PDF

Info

Publication number
KR970048988A
KR970048988A KR1019950065680A KR19950065680A KR970048988A KR 970048988 A KR970048988 A KR 970048988A KR 1019950065680 A KR1019950065680 A KR 1019950065680A KR 19950065680 A KR19950065680 A KR 19950065680A KR 970048988 A KR970048988 A KR 970048988A
Authority
KR
South Korea
Prior art keywords
light
contact
contact mask
light transmitting
transmitted portion
Prior art date
Application number
KR1019950065680A
Other languages
Korean (ko)
Inventor
이두희
권원택
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950065680A priority Critical patent/KR970048988A/en
Publication of KR970048988A publication Critical patent/KR970048988A/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 콘택 마스크에 관한 것으로, 사진 공정시 발생되는 감광막의 들뜸 및 콘택 홀간의 접촉을 방지하기 위하여 가로변 및 세로변의 길이가 서로 다른 다수의 투광부가 등간격으로 배치된 홀수 및 짝수열의 투광부열이 형성되고, 상기 홀수열의 투광부열 및 짝수열의 투광부열간의 간격이 상기 투광부의 세로변의 길이와 동일하며, 상기 홀수열의 투광부열 및 짝수 열의 투광부 열의 각 투광부가 엇갈리도록 형성된 콘택 마스크를 이용하므로써 감광막의 패터닝되는 부분들이 서로 충분한 간격을 유지할 수 있기 때문에 상기 감광막의 들뜸이 방지된다. 또한 체인 형태를 갖는 콘택 홀간의 간격 확보가 충분하여 콘택 홀간의 접촉이 방지되므로써 소자의 수율이 향상될 수 있는 콘택 마스크에 관한 것이다.Field of the Invention The present invention relates to a contact mask, wherein a plurality of light-transmitting portions having different lengths of horizontal and vertical sides arranged at equal intervals in order to prevent lifting of the photoresist film and contact between contact holes generated in a photolithography process are arranged in even and even rows The contact mask is formed, and the interval between the light-emitting portion of the odd-numbered column and the light-transmitted portion of the even-numbered column is equal to the length of the vertical side of the light-transmitted portion, and the contact masks are formed such that each light-transmitted portion of the light-transmitted portion of the odd-numbered column and the light-transmitted portion of the even-numbered column is staggered. By using this, the patterned portions of the photosensitive film can be kept at a sufficient distance from each other, so that the photosensitive film is prevented from being lifted up. In addition, the present invention relates to a contact mask that can secure a gap between contact holes having a chain shape and prevent contact between the contact holes, thereby improving the yield of the device.

Description

콘택 마스크Contact mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 콘택 마스크의 평면도.2 is a plan view of a contact mask according to the present invention.

Claims (5)

콘택 마스크에 있어서, 빛이 투과될 수 있는 석영 기판에 형성되며 다수의 투광부가 등간격을 유지하는 상태로 배치된 홀수열의 투광부열과, 상기 홀수열의 투광부열 사이에 형성되며, 다수의 투광부가 등간격을 유지하는 상태로 배치되고, 상기 각 투광부는 상기 홀수열의 투광부열에 배치된 각 투광부와 엇갈리도록 형성된 짝수열의 투광부열과, 상기 각 투광부를 제외한 부분의 상기 석영 기판에 형성된 투광 방지부로 이루어지는 것을 특징으로 하는 콘택 마스크.In the contact mask, a light transmitting portion of an odd number of light emitting portions is formed on a quartz substrate through which light can pass, and a plurality of light transmitting portions are arranged at equal intervals, and a plurality of light transmitting portions are formed. Evenly spaced light emitting parts are arranged so as to maintain equal intervals, and each light transmitting part is an even light transmitting part column formed so as to be staggered with each light transmitting part arranged in the light emitting part columns of the odd rows, and the anti-reflective part formed on the quartz substrate in a portion other than the light transmitting parts. A contact mask, characterized in that made. 제1항에 있어서, 상기 각 투광부는 가로변 및 세로변의 길이가 서로 다르게 형성된 것을 특징으로 하는 콘택 마스크.The contact mask of claim 1, wherein each of the light transmitting parts is formed with different lengths of horizontal and vertical sides. 제1항에 있어서, 상기 각 투광부간의 간격은 상기 투광부의 가로변의 길이와 동일한 것을 특징으로 하는 콘택 마스크.The contact mask of claim 1, wherein an interval between the light transmitting parts is equal to a length of a horizontal side of the light transmitting part. 제1항에 있어서, 상기 홀수열의 투광부열 및 상기 짝수열의 투광부열의 간격은 상기 투광부의 세로변의 길이와 동일한 것을 특징으로 하는 콘택 마스크.The contact mask of claim 1, wherein an interval between the light-transmitting portion of the odd-numbered row and the light-transmitting portion of the even-numbered row is equal to a length of a vertical side of the light-transmitting portion. 제1항에 있어서, 상기 투광 방지부는 빛의 투과가 방지되도록 크롬이 코팅된 것을 특징으로 하는 콘택 마스크.The contact mask of claim 1, wherein the anti-reflective part is coated with chromium to prevent light transmission. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950065680A 1995-12-29 1995-12-29 Contact mask KR970048988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065680A KR970048988A (en) 1995-12-29 1995-12-29 Contact mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065680A KR970048988A (en) 1995-12-29 1995-12-29 Contact mask

Publications (1)

Publication Number Publication Date
KR970048988A true KR970048988A (en) 1997-07-29

Family

ID=66624093

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950065680A KR970048988A (en) 1995-12-29 1995-12-29 Contact mask

Country Status (1)

Country Link
KR (1) KR970048988A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100807083B1 (en) * 2006-08-11 2008-02-25 동부일렉트로닉스 주식회사 Mask for forming contact hole, mask manufacturing method and flash memory device manufacturing method using the mask
KR101051175B1 (en) * 2008-12-19 2011-07-21 주식회사 하이닉스반도체 Exposure mask and method of forming semiconductor device using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100807083B1 (en) * 2006-08-11 2008-02-25 동부일렉트로닉스 주식회사 Mask for forming contact hole, mask manufacturing method and flash memory device manufacturing method using the mask
KR101051175B1 (en) * 2008-12-19 2011-07-21 주식회사 하이닉스반도체 Exposure mask and method of forming semiconductor device using same

Similar Documents

Publication Publication Date Title
US9853241B2 (en) Organic light-emitting display apparatus and fabrication method thereof
KR970030943A (en) Full Color Organic Light Emitting Diode Array
KR930018306A (en) Reflective substrate, manufacturing method thereof and liquid crystal display device using same
KR950029883A (en) Display and diffraction grating array with diffraction grating pattern
KR930009375A (en) Solid state imaging device and manufacturing method thereof
KR980005302A (en) Contact mask for semiconductor device manufacturing
CN103713351B (en) Light guide element, manufacturing method thereof and lighting lamp
KR970048988A (en) Contact mask
KR950009902A (en) Wafer stepper
EP1566987A4 (en) METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
KR930022469A (en) Photomasks for Semiconductor Integrated Circuit Devices
KR960005756A (en) Photomask Manufacturing Method for Semiconductor Device Manufacturing
KR100902448B1 (en) Organic EL Mask
KR100510455B1 (en) Mask pattern for formation of an isolated pattern, method for fabricating the same and method for forming an isolated pattern using the same
KR970076069A (en) Contact mask
KR970016789A (en) Phase inversion mask and manufacturing method thereof
KR950019909A (en) Photomasks and Photomask Blanks
KR950021039A (en) Halftone phase inversion mask and manufacturing method thereof
KR100913329B1 (en) Mask pattern for forming via and manufacturing method thereof
KR970022579A (en) Modified Aperture and Modified Illumination Method Using the Same
KR940014211A (en) Manufacturing Method of Micro Lens
KR970002457A (en) Phase inversion mask and manufacturing method thereof
KR950015573A (en) Manufacturing Method of Semiconductor Device
KR960008381A (en) Exposure pattern using one mask
DE60222181D1 (en) REFLECTION ELECTRODE FORMATION METHOD AND LIQUID CRYSTAL DISPLAY

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19951229

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid