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KR970023665A - 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 - Google Patents

웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 Download PDF

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KR970023665A
KR970023665A KR1019950039045A KR19950039045A KR970023665A KR 970023665 A KR970023665 A KR 970023665A KR 1019950039045 A KR1019950039045 A KR 1019950039045A KR 19950039045 A KR19950039045 A KR 19950039045A KR 970023665 A KR970023665 A KR 970023665A
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wafer
stage
debonding
debonder
liquid
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KR1019950039045A
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KR0165467B1 (ko
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차기호
이병훈
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김광호
삼성전자 주식회사
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Priority to KR1019950039045A priority Critical patent/KR0165467B1/ko
Priority to JP8282601A priority patent/JPH09167724A/ja
Priority to US08/742,938 priority patent/US5783022A/en
Publication of KR970023665A publication Critical patent/KR970023665A/ko
Priority to US09/067,821 priority patent/US5863375A/en
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Publication of KR0165467B1 publication Critical patent/KR0165467B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/28—Splitting layers from work; Mutually separating layers by cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
    • Y10S156/941—Means for delaminating semiconductive product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49815—Disassembling
    • Y10T29/49819—Disassembling with conveying of work or disassembled work part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49815—Disassembling
    • Y10T29/49822—Disassembling by applying force
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/53683—Spreading parts apart or separating them from face to face engagement

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

웨이퍼를 디본딩하는 장치 및 이를 이용하여 웨이퍼를 디본딩하는 방법에 대해 기재되어 있다. 웨이퍼 디본더는, 그 상부 표면이 평탄한 제1 대(臺)와, 제1 대의 상부에 위치하고 그 하부 표면이 경사진 제2 대와, 제1 대 와 제2 대를 연결하는 연결부로 구성된 웨이퍼 장착기, 제1 대에 장착된 제1 홀더(holder), 제2 대의 경사면에 평행한 면에 위치한 제2 홀더 및 장착기의 전면에 장착된 노즐(nozzle)을 포함한다. 본딩된 웨이퍼들은 노즐에서 분사된 액체에 의해 디본딩된다. 따라서, 웨이퍼의 표면에 스크래치 등의 결함으로 발생시키지 않으면서 웨이퍼를 디본딩할 수 있다.

Description

웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 웨이퍼 디본더를 도시한 단면도이다.
제3A도 및 제3B도는 본 발명에 의한 웨이퍼 디본딩법을 설명하기 위해 도시한 단면도들이다.

Claims (13)

  1. 그 상부 표면이 평탄한 제1 대(臺)와, 상기 제1 대의 상부에 위치하고 그 하부 표면이 경사진 제2 대와, 상기 제1 대와 제2 대를 연결하는 연결부로 구성된 웨이퍼 장착기 ; 상기 제1 대에 장착된 제1 홀더(holder) ; 상기 제2대의 경사면에 평행한 면에 위치한 제2 홀더; 및 상기 장착기의 전면에 장착된 노즐(nozzle)을 포함하는 것을 특징으로 하는 웨이퍼 디본더.
  2. 제1항에 있어서, 상기 제1 대의 길이는 웨이퍼 길이의 2/3인 것을 특징으로 하는 웨이퍼 디본더.
  3. 제1항에 있어서, 상기 제2 대의 길이는 웨이퍼 길이의 1/3인 것을 특징으로 하는 웨이퍼 디본더.
  4. 제1항에 있어서, 상기 제2 대의 경사면은 상기 제1 대의 평탄한 표면에 대해 3-5°의 각도를 이루도록 형성되어 있는 것을 특징으로 하는 웨이퍼 디본더.
  5. 제1 항에 있어서, 상기 제1 및 제2 홀더는 진공 척(vacuum chuck)인 것을 특징으로 하는 웨이퍼 디본더.
  6. 제1항에 있어서, 상기 노즐은 핀형 및 판형 중 어느 하나인 것을 특징으로 하는 웨이퍼 디본더.
  7. 그 상부 표면이 평탄한 제1대(臺)와, 상기 제1대의 상부에 위치하고 그 하부 표면이 경사진 제2대와, 상기 제1 대와 제2 대를 연결하는 연결부로 구성된 웨이퍼 장착기에 본딩되어 있는 제1 웨이퍼와 제2 웨이퍼를 장착하는 제1단계; 상기 제1대에 장착되어 있는 제1홀더로 본딩되어 있는 상기 제1웨이퍼와 제2웨이퍼를 고정시키는 제2단계 ; 그 입구가 상기 제1 웨이퍼와 제2 웨이퍼의 계면에 평행으로 위치하도록 상기 노즐의 위치를 조정하는 제3 단계; 상기 제1웨이퍼와 제2웨이퍼의 계면으로 상기 노즐에서 분사된 액체가 도달되도록 함으로써 상기 제1웨이퍼와 제2웨이퍼를 디본딩하는 제4 단계 ; 및 디본딩된 웨이퍼를 상기 제2 대의 경사면과 평행한 면에 위치하는 제2 홀더로 고정시키는 제5 단계를 포함하는 것을 특징으로 하는 웨이퍼 디본딩법.
  8. 제7항에 있어서, 상기 액체로 탈이온수를 사용하는 것을 특징으로 하는 웨이퍼 디본딩법.
  9. 제7항에 있어서, 상기 제1 및 제2홀더로 진공 척을 사용하는 것을 특징으로 하는 웨이퍼 디본딩법.
  10. 제7항에 있어서 노즐에서 분사되는 상기 액체의 분사압력은 제1웨이퍼와 제2웨이퍼의 본딩 세기보다 2배 이상 큰 것을 특징으로 하는 웨이퍼 디본딩법.
  11. 본딩되어 있는 제1웨이퍼와 제2웨이퍼 사이에, 상기 제1웨이퍼와 제2웨이퍼의 본딩 세기보다 큰 수압을 갖는 액체를 분사함으로써 상기 제1웨이퍼와 제2웨이퍼를 디본딩하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 디본딩법.
  12. 제11항에 있어서, 상기 액체의 수압은 상기 본딩 세기보다 2배이상 큰 것을 특징으로 하는 웨이퍼 디본딩법.
  13. 제11항에 있어서, 상기 액체는 탈이온수인 것을 특징으로 하는 웨이퍼 디본딩법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950039045A 1995-10-31 1995-10-31 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 KR0165467B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019950039045A KR0165467B1 (ko) 1995-10-31 1995-10-31 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
JP8282601A JPH09167724A (ja) 1995-10-31 1996-10-24 ウェーハデボンダ及びこれを用いたウェーハデボンディング法
US08/742,938 US5783022A (en) 1995-10-31 1996-10-31 Apparatus and methods for wafer debonding using a liquid jet
US09/067,821 US5863375A (en) 1995-10-31 1998-04-28 Apparatus and methods for wafer debonding using a liquid jet

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Application Number Priority Date Filing Date Title
KR1019950039045A KR0165467B1 (ko) 1995-10-31 1995-10-31 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법

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KR970023665A true KR970023665A (ko) 1997-05-30
KR0165467B1 KR0165467B1 (ko) 1999-02-01

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Cited By (5)

* Cited by examiner, † Cited by third party
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EP0886300A3 (en) * 1997-06-16 2000-01-26 Canon Kabushiki Kaisha Apparatus and method of separating sample and substrate fabrication method
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KR100478685B1 (ko) * 2001-05-25 2005-03-24 캐논 가부시끼가이샤 판부재의 분리장치 및 처리방법

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