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KR970017208A - Method of forming the lower magnetic layer pattern of the thin film magnetic head - Google Patents

Method of forming the lower magnetic layer pattern of the thin film magnetic head Download PDF

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Publication number
KR970017208A
KR970017208A KR1019950033526A KR19950033526A KR970017208A KR 970017208 A KR970017208 A KR 970017208A KR 1019950033526 A KR1019950033526 A KR 1019950033526A KR 19950033526 A KR19950033526 A KR 19950033526A KR 970017208 A KR970017208 A KR 970017208A
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layer
insulating layer
forming
lower magnetic
pattern
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KR0174460B1 (en
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노재우
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배순훈
대우전자 주식회사
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Priority to KR1019950033526A priority Critical patent/KR0174460B1/en
Priority to JP8254114A priority patent/JPH09138910A/en
Priority to CN96120116A priority patent/CN1151574A/en
Publication of KR970017208A publication Critical patent/KR970017208A/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

본 발명은 이온 주입 공정을 사용하여서 완만한 경사각의 경사면을 갖도록 박막 자기 헤드의 하부 자성층을 패터닝시키기 위한 방법에 관한 것으로, 하부 기판상에 제1절연층, 하부 자성층 및 제2절연층을 순차적으로 형성시키는 단계와, 이온 주입 공정에 의해서 상기 제2절연층의 표면의 일부를 손상시키는 단계와, 상기 제2절연층의 표면상에 감광층을 형성시키고 제1패턴을 형성시키는 단계와, 상기 제1패턴의 감광층을 마스크로 하여 습식 식각 공정에 의해서 상기 제2절연층을 1차적으로 식각시키는 단계와, 상기 감광층을 다른 형상의 제2패턴으로 형성시키는 단계와, 상기 제2패턴의 감광층을 마스크로 하여 상기 제2절연층을 2차적으로 식각시키는 단계와, 상기 제2절연층상에 제2패턴의 형상으로 잔존하는 감광층을 제거하는 단계와, 건식 식각 공정에 의하여 소정 형상으로 패터닝된 상기 제2절연층을 마스크로 하여 상기 하부 자성층을 패터닝시키는 단계와, 그리고 상기 하부 자성층상에 소정 형상으로 패터닝된 갭층을 형성시키는 단계로 이루어지며 이에 의해서 하부 자성층상에 적층되는 갭층의 적층 두께를 일정하게 유지시킬 수 있고 또한 스텝 커버리지를 향상시킬 수 있으며 이에 의해서 박막 자기헤드의 성능을 향상시킨다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for patterning a lower magnetic layer of a thin film magnetic head using an ion implantation process to have an inclined surface having a gentle inclination angle. Forming a photoresist layer; forming a photoresist layer on the surface of the second insulating layer, and forming a first pattern on the surface of the second insulating layer; First etching the second insulating layer by a wet etching process using a photosensitive layer of one pattern as a mask, forming the photosensitive layer into a second pattern having a different shape, and photosensitive of the second pattern Secondly etching the second insulating layer using the layer as a mask, removing the photosensitive layer remaining in the shape of a second pattern on the second insulating layer, and using a dry etching hole Patterning the lower magnetic layer using the second insulating layer patterned into a predetermined shape by a mask as a mask, and forming a gap layer patterned into a predetermined shape on the lower magnetic layer, thereby forming a lower magnetic layer. The lamination thickness of the gap layer to be laminated on can be kept constant and the step coverage can be improved, thereby improving the performance of the thin film magnetic head.

Description

박막 자기 헤드의 하부 자성층 패턴 형성 방법Method of forming the lower magnetic layer pattern of the thin film magnetic head

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 (가) 내지 (마)는 본 발명에 따라서 박막 자기 헤드의 하부 자성층을 패터닝시키는 방법을 순차적으로 도시한 공정도.3 is a process diagram sequentially illustrating a method of patterning a lower magnetic layer of a thin film magnetic head according to the present invention.

Claims (7)

박막 자기 헤드의 하부 자성층을 패터닝시키기 위한 방법에 있어서, 하부 기판(31)상에 제1절연층(32), 하부 자성층(33) 및 제2절연층(34)을 순차적으로 형성시키는 단계와, 이온 주입 공정에 의해서 상기 제2절연층(34)의 표면의 일부를 손상시키는 단계와, 상기 절연층(34)의 표면상에 감광층(35)을 형성시키고 제1패턴을 형성시키는 단계와, 상기 제1패턴화된 감광층(35)을 마스크로하여 습식 식각 공정에 의해서 상기 제2절연층(34)을 1차적으로 식각시키는 단계와, 상기 감광층(35)을 다른 형상의 제2패턴으로 형성시키는 단계와, 상기 제2패턴의 감광층(35)을 마스크로하여 상기 제2절연층(34)을 2차적으로 식각시키는 단계와, 상기 제2절연층(34)상에 제2패턴의 형상으로 잔존하는 감광층(35)을 제거하는 단계와, 건식 식각 공정에 의하여 소정 형상으로 패터닝된 상기 제2절연층(34)을 마스크로하여 상기 하부 자성층(33)을 패터닝시키는 단계와, 그리고 상기 하부 자성층(33)상에 소정 형상으로 패터닝된 갭층(36)을 형성시키는 단계로 이루어진 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.A method for patterning a lower magnetic layer of a thin film magnetic head, the method comprising: sequentially forming a first insulating layer 32, a lower magnetic layer 33, and a second insulating layer 34 on a lower substrate 31; Damaging a part of the surface of the second insulating layer 34 by an ion implantation process, forming a photosensitive layer 35 on the surface of the insulating layer 34 and forming a first pattern; First etching the second insulating layer 34 by a wet etching process using the first patterned photosensitive layer 35 as a mask, and forming the second pattern of the photosensitive layer 35 in a different shape. And etching the second insulating layer 34 secondly using the photosensitive layer 35 of the second pattern as a mask, and a second pattern on the second insulating layer 34. Removing the remaining photosensitive layer 35 in the shape of and forming an image patterned into a predetermined shape by a dry etching process. Patterning the lower magnetic layer 33 using the second insulating layer 34 as a mask, and forming a gap layer 36 patterned in a predetermined shape on the lower magnetic layer 33. The lower magnetic layer pattern forming method of the thin film magnetic head. 제1항에 있어서, 상기 1차 식각 공정에 의하여 제거되는 상기 제2절연층(34)의 식각 두께는 (상기 하부 자성층(33)에 대한 상기 제2절연층(34)의 식각 선택비)x(박막 자기 헤드의 자기 코어를 구성하는 하부 자성층(33)의 두께(x))의 값을 갖는 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.The etching thickness of the second insulating layer 34 removed by the first etching process is (the etch selectivity of the second insulating layer 34 relative to the lower magnetic layer 33). The thickness of the lower magnetic layer 33 constituting the magnetic core of the thin film magnetic head has a value of x. 제2항에 있어서, 상기 제2절연층(34)은 실리콘 산화물로 이루어져 있는 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.3. The method of claim 2, wherein the second insulating layer (34) is made of silicon oxide. 제3항에 있어서, 상기 제2절연층(34)은 이온 주입 공정에 의하여 이온 빔이 주입된 상기 제2절연층(34)의 표면상에 형성된 손상 영역(34a)과 상기 이온 빔이 주입되지 않은 상기 제2절연층(34)의 표면 하부에 형성된 비손상 영역(34b)으로 이루어진 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.The method of claim 3, wherein the second insulating layer 34 is not implanted with the damaged region 34a formed on the surface of the second insulating layer 34 implanted with an ion beam by an ion implantation process. And an intact region (34b) formed below the surface of the second insulating layer (34). 제4항에 있어서, 상기 제2절연층(34)의 적층 두께는 상기 하부 자성층(33)의 적층 두께보다 두껍게 형성되는 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.5. The method of claim 4, wherein the thickness of the second insulating layer (34) is greater than that of the lower magnetic layer (33). 제5항에 있어서, 상기 하부 자성층(33)의 경사면의 경사각(θ′)은 상기 제2절연층(34)의 경사면의 경사각(θ2)보다 완만한 각도로 형성되는 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.The thin film magnetic field of claim 5, wherein the inclination angle θ ′ of the inclined surface of the lower magnetic layer 33 is formed at a gentler angle than the inclination angle θ 2 of the inclined surface of the second insulating layer 34. Method for forming the lower magnetic layer pattern of the head. 제5항에 있어서, 상기 제2절연층(34)을 이온 빔 밀링 공정에 의하여 제거시키는 것을 특징으로 하는 박막 자기 헤드의 하부 자성층 패턴 형성 방법.6. The method of claim 5, wherein the second insulating layer (34) is removed by an ion beam milling process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033526A 1995-09-30 1995-09-30 Method of forming the lower magnetic layer pattern of the thin film magnetic head Expired - Fee Related KR0174460B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950033526A KR0174460B1 (en) 1995-09-30 1995-09-30 Method of forming the lower magnetic layer pattern of the thin film magnetic head
JP8254114A JPH09138910A (en) 1995-09-30 1996-09-26 Method of patterning a metal layer
CN96120116A CN1151574A (en) 1995-09-30 1996-09-28 Method for patterning metal layer

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Application Number Priority Date Filing Date Title
KR1019950033526A KR0174460B1 (en) 1995-09-30 1995-09-30 Method of forming the lower magnetic layer pattern of the thin film magnetic head

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KR970017208A true KR970017208A (en) 1997-04-30
KR0174460B1 KR0174460B1 (en) 1999-04-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445741B1 (en) * 2000-06-21 2004-08-25 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. Patterned magnetic recording media with regions rendered nonmagnetic by ion irradiation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1959879B (en) * 2006-10-12 2010-05-12 南京航空航天大学 Fine magnetic element and its electrochemical manufacturing method
US9893141B2 (en) 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445741B1 (en) * 2000-06-21 2004-08-25 히다치 글로벌 스토리지 테크놀로지스 네덜란드 비.브이. Patterned magnetic recording media with regions rendered nonmagnetic by ion irradiation

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Publication number Publication date
KR0174460B1 (en) 1999-04-15
CN1151574A (en) 1997-06-11
JPH09138910A (en) 1997-05-27

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