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KR970012016A - Method of forming photoresist pattern by second or more exposure - Google Patents

Method of forming photoresist pattern by second or more exposure Download PDF

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Publication number
KR970012016A
KR970012016A KR1019950025729A KR19950025729A KR970012016A KR 970012016 A KR970012016 A KR 970012016A KR 1019950025729 A KR1019950025729 A KR 1019950025729A KR 19950025729 A KR19950025729 A KR 19950025729A KR 970012016 A KR970012016 A KR 970012016A
Authority
KR
South Korea
Prior art keywords
exposure
photoresist
pattern
mask
entire surface
Prior art date
Application number
KR1019950025729A
Other languages
Korean (ko)
Inventor
황병한
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950025729A priority Critical patent/KR970012016A/en
Publication of KR970012016A publication Critical patent/KR970012016A/en

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 포토레지스트 패턴형성 방법에 관한 것으로서, 특히 2차 이상의 노광에 의한 패턴형성방법에 관해 개시한다. 본 발명의 2차 이상의 노광에 의한 포토레지스트 패턴 형성방법은 반도체기판 전면에 포토레지스트를 형성하는 단계, 상기 포토레지스트 전면에 선택된 패턴을 갖는 마스크를 통하여 1차 노광을 실시하는 단계, 상기 마스크 또는 선택된 패턴을 갖는 다른 마스크를 통하여 2차 노광을 실시하는 단계, 상기 선택된 패턴을 갖는 또 다른 마스크를 통하여 3차 노광을 실시하는 단계 및 상기 포토레지스트를 현상하여 포토레지스트 패턴을 형성하는 단계를 포함한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist pattern formation method, and more particularly, to a pattern formation method by secondary or higher exposure. In the method of forming a photoresist pattern by the second or more exposure of the present invention, forming a photoresist on the entire surface of the semiconductor substrate, performing a first exposure through a mask having a selected pattern on the entire surface of the photoresist, the mask or the selected Performing a second exposure through another mask having a pattern, performing a third exposure through another mask having the selected pattern, and developing the photoresist to form a photoresist pattern.

본 발명에 의하면, 다중간섭에 의한 보강간섭을 줄여 종래의 한계피치 이하의 패턴을 형성할 수 있다. 그리고 2차 이상으로 나누어 노광함으로써 본 발명 전에 형성된 피치에 비해 큰 피치의 가로 폭을 갖는 마스크제작도 훨씬 수월해진다. 또한 실제 패턴 형성이 2차 이상으로 나누어 형성되므로서, 과속 혹은 과도 노광시 빛의 회절 현상에 의한 기형 포토레지스트 패턴이 형성되는 것을 방지할 수 있다. 결과적으로 조명 광학 시스템의 한계 피치(선폭) 이하의 폭을 가진 패턴을 형성 할 수 있다.According to the present invention, it is possible to form a pattern below the conventional limit pitch by reducing the reinforcement interference by multiple interference. In addition, by dividing the light into two or more orders of exposure, a mask having a larger width in width than the pitch formed before the present invention is much easier. In addition, since the actual pattern formation is formed in two or more divisions, it is possible to prevent the formation of the malformed photoresist pattern due to the diffraction phenomenon of light during overspeed or overexposure. As a result, a pattern having a width less than or equal to the limit pitch (line width) of the illumination optical system can be formed.

Description

2차 이상의 노광에 의한 포토레지스트 패턴 형성방법Method of forming photoresist pattern by second or more exposure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제7도는 내지 9도는 본 발명의 제1실시예에 의한 2차 이상의 노광에 의한 포토레지스트 패턴 형성 방법을 단계별로 나타낸 도면들이다.7 to 9 are views showing step by step a method of forming a photoresist pattern by the second or more exposure according to the first embodiment of the present invention.

Claims (2)

반도체기판 상에 포토레지스트를 도포하는 단계; 상기 포토레지스트 전면에 선택된 마스크를 통하여 1차 노광을 실시하는 단계; 상기 마스크를 수평이동한 후 2차 노광을 실시하는 단게; 및 상기 포토레지스트를 현상하여 패턴을 완성하는 단계를 포함하는 것을 특징으로 하는 2차 이상의 노광에 의한 포토레지스트 패턴 형성방법.Applying a photoresist on the semiconductor substrate; Performing primary exposure through a mask selected on the entire surface of the photoresist; Performing secondary exposure after horizontally moving the mask; And developing the photoresist to complete the pattern. 반도체기관 상에 포토레지스트를 도포하는 단계; 상기 포토레지스트 전면에 선택된 제1마스크를 통하여 1회 노광을 실시하는 단계; 상기 포토레지스트 전면에 상기 1차 노광위치에서 선택된 제2마스크의 노광부분의 폭 보다 작은 거리를 이동하여 2차 노광을 실시하는 단계; 상기 포토레지스트 전면에 선택된 제3마스크의 노광폭 보다 작은 거리를 이동한 후 3차 노광을 실시하는 단계; 및 상기 포토레지스트를 현상하여 패턴을 완성하는 단계를 포함하는 것을 특징으로 하는 2차 이상의 노광에 의한 포토레지스트 패턴 형성방법.Applying a photoresist on the semiconductor organ; Performing a single exposure through a first mask selected over the entire surface of the photoresist; Performing a second exposure on the entire surface of the photoresist by moving a distance smaller than the width of the exposed portion of the second mask selected at the first exposure position; Performing a third exposure after moving a distance smaller than the exposure width of the third mask selected on the entire surface of the photoresist; And developing the photoresist to complete the pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950025729A 1995-08-21 1995-08-21 Method of forming photoresist pattern by second or more exposure KR970012016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025729A KR970012016A (en) 1995-08-21 1995-08-21 Method of forming photoresist pattern by second or more exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025729A KR970012016A (en) 1995-08-21 1995-08-21 Method of forming photoresist pattern by second or more exposure

Publications (1)

Publication Number Publication Date
KR970012016A true KR970012016A (en) 1997-03-29

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KR1019950025729A KR970012016A (en) 1995-08-21 1995-08-21 Method of forming photoresist pattern by second or more exposure

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431314B1 (en) * 1997-06-24 2004-07-30 주식회사 하이닉스반도체 Method of forming fine patterns for semiconductor device
KR100919350B1 (en) * 2008-04-24 2009-09-25 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
KR101230106B1 (en) * 2003-12-30 2013-02-05 인텔 코포레이션 A low outgassing and non-crosslinking series of polymers for euv negative tone photoresists
WO2024096229A1 (en) * 2022-11-02 2024-05-10 한국과학기술원 Photolithographic patterning method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100431314B1 (en) * 1997-06-24 2004-07-30 주식회사 하이닉스반도체 Method of forming fine patterns for semiconductor device
KR101230106B1 (en) * 2003-12-30 2013-02-05 인텔 코포레이션 A low outgassing and non-crosslinking series of polymers for euv negative tone photoresists
KR100919350B1 (en) * 2008-04-24 2009-09-25 주식회사 하이닉스반도체 Pattern formation method of semiconductor device
WO2024096229A1 (en) * 2022-11-02 2024-05-10 한국과학기술원 Photolithographic patterning method

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19950821

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