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KR960705370A - 항복 전압이 증가되는 고전압 ldd-mosfet 및 그 제조방법(high-voltage ldd-mosfet with increased breakdown voltage and method of fabrication) - Google Patents

항복 전압이 증가되는 고전압 ldd-mosfet 및 그 제조방법(high-voltage ldd-mosfet with increased breakdown voltage and method of fabrication)

Info

Publication number
KR960705370A
KR960705370A KR1019960701858A KR19960701858A KR960705370A KR 960705370 A KR960705370 A KR 960705370A KR 1019960701858 A KR1019960701858 A KR 1019960701858A KR 19960701858 A KR19960701858 A KR 19960701858A KR 960705370 A KR960705370 A KR 960705370A
Authority
KR
South Korea
Prior art keywords
voltage
mosfet
ldd
breakdown voltage
fabrication
Prior art date
Application number
KR1019960701858A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960705370A publication Critical patent/KR960705370A/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/857—Complementary IGFETs, e.g. CMOS comprising an N-type well but not a P-type well
KR1019960701858A 1994-08-11 1996-04-10 항복 전압이 증가되는 고전압 ldd-mosfet 및 그 제조방법(high-voltage ldd-mosfet with increased breakdown voltage and method of fabrication) KR960705370A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28899394A 1994-08-11 1994-08-11
PCT/US1995/010207 WO1996005618A1 (en) 1994-08-11 1995-08-10 High-voltage ldd-mosfet with increased breakdown voltage and method of fabrication

Publications (1)

Publication Number Publication Date
KR960705370A true KR960705370A (ko) 1996-10-09

Family

ID=23109543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960701858A KR960705370A (ko) 1994-08-11 1996-04-10 항복 전압이 증가되는 고전압 ldd-mosfet 및 그 제조방법(high-voltage ldd-mosfet with increased breakdown voltage and method of fabrication)

Country Status (5)

Country Link
US (1) US5721170A (ko)
EP (1) EP0727098B1 (ko)
KR (1) KR960705370A (ko)
DE (1) DE69519016T2 (ko)
WO (1) WO1996005618A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105411B1 (en) * 1997-12-18 2006-09-12 Micron Technology, Inc. Methods of forming a transistor gate
KR100389899B1 (ko) * 1997-12-18 2003-07-04 미크론 테크놀로지,인코포레이티드 핫-캐리어 효과 제한 트랜지스터 게이트 형성 및 그 트랜지스터
FR2779574B1 (fr) * 1998-06-03 2003-01-31 Sgs Thomson Microelectronics Procede de fabrication de transistors haute et basse tension
US6110782A (en) * 1998-11-19 2000-08-29 Taiwan Semiconductor Manufacturing Company Method to combine high voltage device and salicide process
JP2004111746A (ja) * 2002-09-19 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
US8178930B2 (en) * 2007-03-06 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Structure to improve MOS transistor on-breakdown voltage
US7893507B2 (en) * 2008-01-23 2011-02-22 O2Micro International Limited Metal oxide semiconductor (MOS) transistors with increased break down voltages and methods of making the same
JP5081030B2 (ja) * 2008-03-26 2012-11-21 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP2010232281A (ja) * 2009-03-26 2010-10-14 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US9768166B1 (en) * 2016-09-26 2017-09-19 International Business Machines Corporation Integrated LDMOS and VFET transistors
CN111326582B (zh) * 2018-12-13 2022-08-02 中芯集成电路（宁波）有限公司 栅驱动集成电路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645076A (en) * 1979-09-21 1981-04-24 Hitachi Ltd Manufacturing of power mis field effect semiconductor device
JPS5656674A (en) * 1979-10-15 1981-05-18 Hitachi Ltd Mosfet of high pressure resisting property and preparation thereof
JPS56162873A (en) * 1980-05-19 1981-12-15 Nec Corp Insulated gate type field effect semiconductor device
JPS6249664A (ja) * 1985-08-29 1987-03-04 Hitachi Ltd 半導体装置の製造方法
JPS62229976A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体装置およびその製造方法
JPH0695526B2 (ja) * 1987-03-06 1994-11-24 株式会社東芝 半導体装置
JPH01179363A (ja) * 1987-12-31 1989-07-17 Nec Corp 絶縁ゲート型電界効果トランジスタ及びその製造方法
US4949136A (en) * 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
US5006477A (en) * 1988-11-25 1991-04-09 Hughes Aircraft Company Method of making a latch up free, high voltage, CMOS bulk process for sub-half micron devices
KR950000141B1 (ko) * 1990-04-03 1995-01-10 미쓰비시 뎅끼 가부시끼가이샤 반도체 장치 및 그 제조방법
JP2545762B2 (ja) * 1990-04-13 1996-10-23 日本電装株式会社 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法
US5541131A (en) * 1991-02-01 1996-07-30 Taiwan Semiconductor Manufacturing Co. Peeling free metal silicide films using ion implantation
JPH04321269A (ja) * 1991-02-05 1992-11-11 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPH04288840A (ja) * 1991-03-18 1992-10-13 Sony Corp Ｌｄｄ構造のｍｏｓ半導体装置及びその製造方法
US5162884A (en) * 1991-03-27 1992-11-10 Sgs-Thomson Microelectronics, Inc. Insulated gate field-effect transistor with gate-drain overlap and method of making the same
JP3474589B2 (ja) * 1992-04-17 2003-12-08 株式会社デンソー 相補型ｍｉｓトランジスタ装置
US5350698A (en) * 1993-05-03 1994-09-27 United Microelectronics Corporation Multilayer polysilicon gate self-align process for VLSI CMOS device
US5476803A (en) * 1994-10-17 1995-12-19 Liu; Kwo-Jen Method for fabricating a self-spaced contact for semiconductor devices
US5518945A (en) * 1995-05-05 1996-05-21 International Business Machines Corporation Method of making a diffused lightly doped drain device with built in etch stop

Also Published As

Publication number Publication date
EP0727098B1 (en) 2000-10-04
DE69519016D1 (de) 2000-11-09
US5721170A (en) 1998-02-24
EP0727098A1 (en) 1996-08-21
WO1996005618A1 (en) 1996-02-22
DE69519016T2 (de) 2001-05-17

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PA0105 International application

Patent event date: 19960410

Patent event code: PA01051R01D

Comment text: International Patent Application

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Patent event code: PA02012R01D

Patent event date: 20000203

Comment text: Request for Examination of Application

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Patent event date: 20011224

Patent event code: PE09021S01D

PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested