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KR960039132A - 씨브이디장치의 가열장치 - Google Patents

씨브이디장치의 가열장치 Download PDF

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Publication number
KR960039132A
KR960039132A KR1019960012585A KR19960012585A KR960039132A KR 960039132 A KR960039132 A KR 960039132A KR 1019960012585 A KR1019960012585 A KR 1019960012585A KR 19960012585 A KR19960012585 A KR 19960012585A KR 960039132 A KR960039132 A KR 960039132A
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KR
South Korea
Prior art keywords
substrate
heating
cvd apparatus
purge gas
ceramic heater
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KR1019960012585A
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KR100244954B1 (ko
Inventor
시게루 미즈노
가즈히토 와타나베
다카노리 요시무라
노부유키 다카하시
Original Assignee
니시히라 슌지
아네루바 가부시시가이샤
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Publication of KR960039132A publication Critical patent/KR960039132A/ko
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Publication of KR100244954B1 publication Critical patent/KR100244954B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

가열장치는 CVD장치에 사용된다. CVD장치에서는, 기판지지체위의 기판에 대하여 반응가스공급판을 통하여 공급된 반응가스를 공급하고, 기판위에 성막을 행하고, 또한 기판의 외주에지의 가까이에 배치되는 링판을 포함하는 실드기구를 기판지지체의 주위에 설치함으로서 퍼스가스공급로가 형성된다. 성막을 행할 때, 기판과 링판과의 사이의 간극으로부터, 퍼스가스공급로에서 공급되는 퍼지가스를 분출하여, 퍼지가스로 기판의 배면성막 등을 방지한다. 퍼지가스공급로내의 공간으로서 기판지지체의 근접한 곳에, 기판지지체에 비접촉상태로 발열체를 배치하도록 구성된다.
이 발열체는, 바람직하게는 세라믹히터이다.

Description

씨브이디장치의 가열장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 관한 가열장치를 구비한 CVD장치의 개략적인 구성을 나타낸 종단면도.

Claims (9)

  1. 반응용기내에 설치한 기판지지수단의 위에 기판에 대하여 반응가스공급수단에서 공급된 반응가스를 공급함으로써 상기 기판의 위에 성막을 행하는 동시에, 상기 기판의 외주에지의 가까이에 배치되는 링부를 포함하는 실드기구를 상기 기판지지수단의 주위에 설치함으로써 퍼지가스공급로를 형성하고, 상기 성막시에, 상기 기판과 상기 링부와의 사이의 간극으로부터 상기 퍼지가스공급로에서 공급되는 퍼지가스를 분출하도록 한 CVD장치에 있어서, 상기 퍼지가스공급로내에 있어서의 상기 기판지지수단에 근접한 곳에, 상기 기판 지지수단에 비접촉상태로 발열체를 배치한 것을 특징으로 하는 CVD장치의 가열장치.
  2. 제1항에 있어서, 상기 발열체는 세라믹히터이고, 이 세라믹히터는 상기 반응용기의 벽부에 설치된 최소한 3개의 세라믹제 지지부의 위에 고정되는 것을 특징으로 하는 CVD장치의 가열장치.
  3. 제2항에 있어서, 상기 세라믹히터는 평판형이고, 그 발열면은 상기 기판지지수단의 저면에 대향하도록 배치되는 것을 특징으로 하는 CVD장치의 가열장치.
  4. 제2항에 있어서, 상기 세라믹히터의 배선단자에 보호커버를 설치한 것을 특징으로 하는 CVD장치의 가열장치.
  5. 제3항에 있어서, 상기 세라믹히터의 상기 발열면은 개별로 온도제어되는 최소한 2개의 영역으로 분할되는 것을 특징으로 하는 CVD장치의 가열장치.
  6. 제5항에 있어서, 상기 발열면의 상기 영역은 내측영역, 중간영역, 외측영역으로 이루어지는 것을 특징으로 하는 CVD장치의 가열장치.
  7. 제4항에 있어서, 상기 배선단자는 고융점 금속으로 만들어지는 것을 특징으로 하는 CVD장치의 가열장치.
  8. 제2항에 있어서, 상기 세라믹히터의 내면위치에 반사수단이 설치되는 것을 특징으로 하는 CVD장치의 가열장치.
  9. 제1항에 있어서, 상기 발열체는 평판형 부재인 것을 특징으로 하는 CVD장치의 가열장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019960012585A 1995-04-28 1996-04-24 씨브이디(cvd) 장치의 가열장치 Expired - Lifetime KR100244954B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7129207A JPH08302474A (ja) 1995-04-28 1995-04-28 Ｃｖｄ装置の加熱装置
JP1995-129207 1995-04-28

Publications (2)

Publication Number Publication Date
KR960039132A true KR960039132A (ko) 1996-11-21
KR100244954B1 KR100244954B1 (ko) 2000-02-15

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KR1019960012585A Expired - Lifetime KR100244954B1 (ko) 1995-04-28 1996-04-24 씨브이디(cvd) 장치의 가열장치

Country Status (4)

Country Link
US (1) US5766363A (ko)
JP (1) JPH08302474A (ko)
KR (1) KR100244954B1 (ko)
TW (1) TW353764B (ko)

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Also Published As

Publication number Publication date
TW353764B (en) 1999-03-01
US5766363A (en) 1998-06-16
JPH08302474A (ja) 1996-11-19
KR100244954B1 (ko) 2000-02-15

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