KR960011703A - 반도체 메모리 - Google Patents

반도체 메모리 Download PDF

Info

Publication number: KR960011703A
Authority: KR; South Korea
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1994-09-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

KR1019950029274A

Other languages

English (en)

Other versions

KR100186277B1 (ko

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-09-09

Filing date

1995-09-07

Publication date

1996-04-20

1995-09-07 Application filed filed Critical

1996-04-20 Publication of KR960011703A publication Critical patent/KR960011703A/ko

1999-05-15 Application granted granted Critical

1999-05-15 Publication of KR100186277B1 publication Critical patent/KR100186277B1/ko

2015-09-07 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/844—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by splitting the decoders in stages
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Theoretical Computer Science (AREA)
Physics & Mathematics (AREA)
General Engineering & Computer Science (AREA)
General Physics & Mathematics (AREA)
For Increasing The Reliability Of Semiconductor Memories (AREA)
Dram (AREA)

KR1019950029274A 1994-09-09 1995-09-07 반도체 메모리 Expired - Lifetime KR100186277B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP94-216308		1994-09-09
JP21630894		1994-09-09

Publications (2)

Publication Number	Publication Date
KR960011703A true KR960011703A (ko)	1996-04-20
KR100186277B1 KR100186277B1 (ko)	1999-05-15

Family

ID=16686494

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950029274A Expired - Lifetime KR100186277B1 (ko)	1994-09-09	1995-09-07	반도체 메모리

Country Status (2)

Country	Link
US (1)	US5640365A (ko)
KR (1)	KR100186277B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4713699B2 (ja) *	1997-03-27	2011-06-29	ヒューレット・パッカード・カンパニー	復号器システム
DE19823687A1 (de) *	1998-05-27	1999-12-09	Siemens Ag	Fuselatch-Schaltung
JP3638214B2 (ja) *	1998-07-30	2005-04-13	株式会社沖マイクロデザイン	冗長回路
JP3398686B2 (ja) *	1999-06-14	2003-04-21	エヌイーシーマイクロシステム株式会社	半導体記憶装置
US6275442B1 (en) *	2000-05-16	2001-08-14	Hewlett-Packard Company	Address decoder and method for ITS accelerated stress testing
WO2002005093A1 (en) *	2000-07-07	2002-01-17	Mosaid Technologies Incorporated	Method and circuit for accelerating redundant address matching
US6466505B1 (en) *	2001-05-02	2002-10-15	Cypress Semiconductor Corp.	Flexible input structure for an embedded memory
KR20050050343A (ko) *	2003-11-25	2005-05-31	가부시키가이샤 버팔로	메모리 모듈 및 메모리용 보조모듈
KR101009337B1 (ko) *	2008-12-30	2011-01-19	주식회사 하이닉스반도체	반도체 메모리 장치
JP5343734B2 (ja) *	2009-06-26	2013-11-13	富士通株式会社	半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4556975A (en) *	1983-02-07	1985-12-03	Westinghouse Electric Corp.	Programmable redundancy circuit
JPH01119995A (ja) *	1987-11-02	1989-05-12	Toshiba Corp	半導体メモリ

1995
- 1995-09-07 US US08/524,630 patent/US5640365A/en not_active Expired - Lifetime
- 1995-09-07 KR KR1019950029274A patent/KR100186277B1/ko not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5640365A (en)	1997-06-17
KR100186277B1 (ko)	1999-05-15

Publication	Publication Date	Title
KR960008845A (ko)	1996-03-22	반도체 기억장치
DE69731810D1 (de)	2005-01-05	Halbleiter-Festwertspeicher
DE69510834D1 (de)	1999-08-26	Halbleiterspeicheranordnung
DE69822280D1 (de)	2004-04-15	Halbleiterspeicher
DE69521159D1 (de)	2001-07-12	Halbleiterspeicheranordnung
DE69631013D1 (de)	2004-01-22	Halbleiterspeicher
DE69422901D1 (de)	2000-03-09	Halbleiterspeicheranordnung
DE69820040D1 (de)	2004-01-08	Halbleiter-speicher-bauteile
DE69327499D1 (de)	2000-02-10	Halbleiterspeicher
DE69522412D1 (de)	2001-10-04	Nichtflüchtiger Halbleiterspeicher
DE69603632D1 (de)	1999-09-16	Halbleiter-Speicheranordnung
DE69512700D1 (de)	1999-11-18	Halbleiterspeicheranordnung
DE69520254D1 (de)	2001-04-12	Halbleiterspeicher
DE69520333D1 (de)	2001-04-19	Halbleiterspeicher
DE59509657D1 (de)	2001-11-08	Programmierbarer Halbleiterspeicher
DE69615783D1 (de)	2001-11-15	Halbleiterspeicheranordnung
DE69706947D1 (de)	2001-10-31	Halbleiterspeicher
DE69834540D1 (de)	2006-06-22	Halbleiterspeicher
KR960012510A (ko)	1996-04-20	반도체 메모리 장치
DE69325133D1 (de)	1999-07-08	Halbleiterfestwertspeicher
DE69600591D1 (de)	1998-10-08	Halbleiterspeicheranordnung
KR960012033A (ko)	1996-04-20	반도체 기억장치
DE69616710D1 (de)	2001-12-13	Halbleiterspeicher
DE69841446D1 (de)	2010-03-04	Halbleiterspeicher
KR960011703A (ko)	1996-04-20	반도체 메모리

Legal Events

Date	Code	Title	Description
1995-09-07	A201	Request for examination
1995-09-07	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950907
1995-09-07	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19950907 Comment text: Request for Examination of Application
1996-04-20	PG1501	Laying open of application
1998-09-30	E701	Decision to grant or registration of patent right
1998-09-30	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980930
1998-12-29	GRNT	Written decision to grant
1998-12-29	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19981229 Patent event code: PR07011E01D
1998-12-29	PR1002	Payment of registration fee	Payment date: 19981229 End annual number: 3 Start annual number: 1
1999-05-15	PG1601	Publication of registration
2001-11-30	PR1001	Payment of annual fee	Payment date: 20011130 Start annual number: 4 End annual number: 4
2002-11-28	PR1001	Payment of annual fee	Payment date: 20021128 Start annual number: 5 End annual number: 5
2003-11-28	PR1001	Payment of annual fee	Payment date: 20031128 Start annual number: 6 End annual number: 6
2004-12-01	PR1001	Payment of annual fee	Payment date: 20041201 Start annual number: 7 End annual number: 7
2005-11-30	PR1001	Payment of annual fee	Payment date: 20051130 Start annual number: 8 End annual number: 8
2006-12-01	PR1001	Payment of annual fee	Payment date: 20061201 Start annual number: 9 End annual number: 9
2007-11-27	PR1001	Payment of annual fee	Payment date: 20071127 Start annual number: 10 End annual number: 10
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2009-11-27	PR1001	Payment of annual fee	Payment date: 20091127 Start annual number: 12 End annual number: 12
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2014-11-27	FPAY	Annual fee payment	Payment date: 20141128 Year of fee payment: 17
2014-11-27	PR1001	Payment of annual fee	Payment date: 20141128 Start annual number: 17 End annual number: 17
2015-09-08	EXPY	Expiration of term
2015-09-08	PC1801	Expiration of term