[go: up one dir, main page]

KR960011556A - 수용성 막형성 조성물 - Google Patents

수용성 막형성 조성물 Download PDF

Info

Publication number
KR960011556A
KR960011556A KR1019950030904A KR19950030904A KR960011556A KR 960011556 A KR960011556 A KR 960011556A KR 1019950030904 A KR1019950030904 A KR 1019950030904A KR 19950030904 A KR19950030904 A KR 19950030904A KR 960011556 A KR960011556 A KR 960011556A
Authority
KR
South Korea
Prior art keywords
water
soluble
film forming
water soluble
forming composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019950030904A
Other languages
English (en)
Other versions
KR100195287B1 (ko
Inventor
사토시 와타나베
도시노부 이시하라
요시후미 다케다
가츠유키 오이카와
Original Assignee
가나가와 지히로
신에쓰 가가쿠 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17243038&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR960011556(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 가나가와 지히로, 신에쓰 가가쿠 고교 가부시키가이샤 filed Critical 가나가와 지히로
Publication of KR960011556A publication Critical patent/KR960011556A/ko
Application granted granted Critical
Publication of KR100195287B1 publication Critical patent/KR100195287B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

수용성 N-비닐피롤리돈 공중합체와 플루오르화 유기산을 20:80 내지 70:30의 중량비로 하여 이루어지는 수용성 조성물을 화학적으로 증폭된 리지스트 층위에 수용성 피복막을 형성하는데 유용하다. 피복막은 포토리소그래피로 리지스트 패턴 형성동안 반사방지막 및 보호막 둘다로서 작용한다.

Description

수용성 막형성 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 화학적으로 증폭된 리지스트 층위에 막을 형성하는 수용성 조성물에 있어서, N-비닐피롤리돈과 다른 비닐 단량체의 수용성 공중합체와 플루오르화 유기산을 20:80 내지 70:30의 중량비로 하여 이루어지는 것을 특징으로 하는 수용성 조성물.
  2. 제1항에 있어서, 상기 플루오르화 유기산이 하기의 식(1) 내지 (6)의 산으로 구성되는 군으로부터 선택되는 것을 특징으로 하는 조성물.
    F(CF2)nCOOH ... (1)
    H(CF2)nCOOH ... (2)
    F(CF2CF2O)mCF2COOH ... (3)
    ... (4)
    F(CF2)nSO3H ... (5)
    H(CF2)nSO3H ... (6)
    식중에서, n은 4 내지 15의 정수이고 m은 1 내지 10의 정수이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950030904A 1994-09-21 1995-09-20 수용성 막형성 조성물 Expired - Fee Related KR100195287B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-252849 1994-09-21
JP6252849A JP2985688B2 (ja) 1994-09-21 1994-09-21 水溶性膜材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
KR960011556A true KR960011556A (ko) 1996-04-20
KR100195287B1 KR100195287B1 (ko) 1999-06-15

Family

ID=17243038

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950030904A Expired - Fee Related KR100195287B1 (ko) 1994-09-21 1995-09-20 수용성 막형성 조성물

Country Status (4)

Country Link
US (1) US5529888A (ko)
JP (1) JP2985688B2 (ko)
KR (1) KR100195287B1 (ko)
TW (1) TW319787B (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
JP3384534B2 (ja) * 1996-04-15 2003-03-10 信越化学工業株式会社 反射防止膜材料
JP2001023893A (ja) 1999-07-12 2001-01-26 Nec Corp フォトレジストパターンの形成方法
US6110653A (en) * 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
JP2001142221A (ja) * 1999-11-10 2001-05-25 Clariant (Japan) Kk 反射防止コーティング用組成物
JP2001189253A (ja) * 1999-12-28 2001-07-10 Mitsubishi Electric Corp レジストパターン形成方法、レジストパターン形成方法に使用する上層材および半導体装置
JP2001281874A (ja) 2000-03-31 2001-10-10 Tokyo Ohka Kogyo Co Ltd リソグラフィー用反射防止膜形成用組成物およびこれを用いたレジスト積層体
US6274289B1 (en) * 2000-06-16 2001-08-14 Advanced Micro Devices, Inc. Chemical resist thickness reduction process
JP3320402B2 (ja) 2000-06-26 2002-09-03 クラリアント ジャパン 株式会社 現像欠陥防止プロセス及び材料
US20030008968A1 (en) * 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
JP3914468B2 (ja) 2002-06-21 2007-05-16 Ａｚエレクトロニックマテリアルズ株式会社 現像欠陥防止プロセスおよびそれに用いる組成物
JP3771206B2 (ja) * 2002-09-25 2006-04-26 松下電器産業株式会社 水溶性材料及びパターン形成方法
JP4265766B2 (ja) * 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
KR101041285B1 (ko) * 2004-01-15 2011-06-14 제이에스알 가부시끼가이샤 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성방법
US20050164122A1 (en) * 2004-01-26 2005-07-28 Matsushita Electric Industrial Co., Ltd. Chemically amplified resist and pattern formation method
JP4355944B2 (ja) 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
US7384878B2 (en) * 2004-05-20 2008-06-10 International Business Machines Corporation Method for applying a layer to a hydrophobic surface
EP2113811B1 (en) * 2007-02-22 2012-01-25 Asahi Glass Company, Limited Composition for antireflective coating
JP5487592B2 (ja) * 2007-11-06 2014-05-07 セイコーエプソン株式会社 レーザー加工方法
KR101447759B1 (ko) * 2008-12-16 2014-10-06 도쿄엘렉트론가부시키가이샤 도포 처리 방법 및 도포 처리 장치
KR20150080443A (ko) * 2013-12-31 2015-07-09 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 오버코트 조성물
TWI559082B (zh) 2014-07-07 2016-11-21 財團法人工業技術研究院 生質材料與其形成方法與印刷電路板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3410522A1 (de) * 1984-03-22 1985-10-03 Hoechst Ag, 6230 Frankfurt Einbrenngummierung fuer offsetdruckplatten und verfahren zur herstellung einer offsetdruckform
US4784936A (en) * 1985-10-24 1988-11-15 General Electric Company Process of forming a resist structure on substrate having topographical features using positive photoresist layer and poly(vinyl pyrrolidone) overlayer
JPS62136634A (ja) * 1985-12-11 1987-06-19 Hitachi Ltd 感光性組成物
JPS62258448A (ja) * 1986-05-02 1987-11-10 Toshiba Corp 感光性組成物及びパタ−ン形成方法
JPS63196849A (ja) * 1987-02-12 1988-08-15 Fuji Photo Film Co Ltd 一体型多層分析要素
JP3416196B2 (ja) * 1992-06-02 2003-06-16 シップレーカンパニー エル エル シー レジスト表面反射防止膜形成性組成物及びパターン形成方法
JPH06118630A (ja) * 1992-10-06 1994-04-28 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト用塗布液組成物

Also Published As

Publication number Publication date
JPH0895253A (ja) 1996-04-12
US5529888A (en) 1996-06-25
TW319787B (ko) 1997-11-11
KR100195287B1 (ko) 1999-06-15
JP2985688B2 (ja) 1999-12-06

Similar Documents

Publication Publication Date Title
KR960011556A (ko) 수용성 막형성 조성물
US4023973A (en) Photosensitive composition using maleic anhydride adduct of a 1,2 polybutadiene
KR940004384A (ko) 반사 방지막 및 레지스트 패턴의 형성 방법
KR950024020A (ko) 비이온성 탄화 플루오르 계면 활성제를 갖는 수인성 감광성 내식막
KR950019896A (ko) 방사선 감응성 수지 조성물
JPS53126093A (en) Preparation of aqueous polymer emulsion having modified stability
KR930013873A (ko) 패턴형성방법
EP1225480A3 (en) Radiation-sensitive resin composition
MY117818A (en) Anti-reflective coating composition
JPH02175702A (ja) コアシエルミクロゲルを含有する水系で処理しうる感光性組成物
EP0780732A3 (en) Polymer composition and resist material
JPS5678834A (en) Photographic sensitive material
JPS5378288A (en) Preparation of water in oil type polymer emulsion having improved flowability
JPS56110927A (en) Manufacture of silver halide photographic material
KR970071142A (ko) 반사 방지 코팅용 조성물
KR960001054A (ko) 반사방지 코팅조성물
DE3473357D1 (de) Photopolymerizable laminate
CN1090342C (zh) 化学增强的光刻胶
EP1276012A3 (en) Resist patterning process
KR950012149A (ko) 감광성 수지 조성물 및 이를 사용한 패턴의 형성 방법
KR850003992A (ko) 광 저항 조성물
JPH05501314A (ja) 水性または半水性で処理可能なフレキソグラフ印刷板用のレリーズ層
EP0266069A3 (en) Photopolymerizable composition useful for printing plates
EP0302829A3 (en) Photopolymerisable compositions
JPS5614232A (en) Negative type resist resin

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19950920

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19970313

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19950920

Comment text: Patent Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19981123

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19990211

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19990212

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20020206

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20030206

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20040205

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20050204

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20060210

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20070208

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20080205

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20090209

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20100210

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20110126

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20120119

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20120119

Start annual number: 14

End annual number: 14

FPAY Annual fee payment

Payment date: 20130118

Year of fee payment: 15

PR1001 Payment of annual fee

Payment date: 20130118

Start annual number: 15

End annual number: 15

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Termination category: Default of registration fee

Termination date: 20150109