[go: up one dir, main page]

KR850003992A - 광 저항 조성물 - Google Patents

광 저항 조성물 Download PDF

Info

Publication number
KR850003992A
KR850003992A KR1019840007391A KR840007391A KR850003992A KR 850003992 A KR850003992 A KR 850003992A KR 1019840007391 A KR1019840007391 A KR 1019840007391A KR 840007391 A KR840007391 A KR 840007391A KR 850003992 A KR850003992 A KR 850003992A
Authority
KR
South Korea
Prior art keywords
photoresist composition
group
vinyl
relief structure
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019840007391A
Other languages
English (en)
Other versions
KR910007246B1 (ko
Inventor
헤르트네르 하르트무트 (외 2)
Original Assignee
감스, 나우만
메르크 파텐트 게젤샤프트 미트 베쉬랭크터 하프퉁
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 감스, 나우만, 메르크 파텐트 게젤샤프트 미트 베쉬랭크터 하프퉁 filed Critical 감스, 나우만
Publication of KR850003992A publication Critical patent/KR850003992A/ko
Application granted granted Critical
Publication of KR910007246B1 publication Critical patent/KR910007246B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymerisation Methods In General (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)

Abstract

내용 없음

Description

광 저항 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 부가적으로 공단량체로서 비닐 또는 알릴기가 작용기를 통하여 결합된 적어도 하나의 공중합할 수 있는 방사-반응성 비닐 또는 알릴 화합물과 광개시제로서 적어도 하나의 N-아지도 설포닐알릴말레이미드 형태의 화합물을 포함하는 것을 특징으로 하는 카르복실기에 에스테르-결합을 통하여 결합된 방사-반응성 라디칼을 갖는 용해성 폴리아마이드 에스테르 전중합체가 포함된 높은 열-저항 중합체로 구성되는 릴리프 구조의 제조를 위한 광저항-조성물.
  2. 제1항에 있어서, 공단량체에 비닐 또는 알릴기가 산소, 황 또는 질소원자 또는카르보닐, 카르복실, SI, 또는 SO2기를 통하여 결합된 것을 특징으로 하는 광 저항 조성물.
  3. 제1항과 2항에 있어서, N-(4-아지도설포닐페닐)-말레이미드가 광개시제로서 존재하는 것을 특징으로 하는 광 저항-조성물.
  4. 제1-3항에 따른 광 저항-조성물이 적용되는 것을 특징으로 하는 광 저항-조성물로 코팅하고, 층을 건조하여 상을 노출시키고 조사되지 않은 층의 부분을 제거하고 필요하다면 얻어진 릴리프 구조를 가열하는 것에 의한 높은 열-저항중합체로 구성되는 릴리프구조를 제조하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840007391A 1983-11-26 1984-11-26 감광성 내식막 조성물 Expired KR910007246B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEP3342851.4 1983-11-26
DE3342851 1983-11-26
DE19833342851 DE3342851A1 (de) 1983-11-26 1983-11-26 Fotolacke

Publications (2)

Publication Number Publication Date
KR850003992A true KR850003992A (ko) 1985-06-29
KR910007246B1 KR910007246B1 (ko) 1991-09-24

Family

ID=6215357

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840007391A Expired KR910007246B1 (ko) 1983-11-26 1984-11-26 감광성 내식막 조성물

Country Status (5)

Country Link
EP (1) EP0143380B1 (ko)
JP (1) JPS60133445A (ko)
KR (1) KR910007246B1 (ko)
AT (1) ATE40847T1 (ko)
DE (2) DE3342851A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3660339D1 (en) * 1985-01-15 1988-07-28 Merck Patent Gmbh Photoresist compositions with enhanced sensitivity using polyamide esters
DE4328839C2 (de) * 1993-08-27 1997-12-04 Basf Lacke & Farben N-(4-Azidosulfonylphenyl)-tetrahydrophthalimid sowie die Verwendung von N-(4-Azidosulfonylphenyl)-phthalimid und/oder N-(Azidosulfonylphenyl)-tetrahydrophthalimid
JP3425311B2 (ja) * 1996-03-04 2003-07-14 株式会社東芝 ネガ型感光性ポリマー樹脂組成物、これを用いたパターン形成方法、および電子部品
CA2927994A1 (en) 2013-11-07 2015-05-14 Akzo Nobel Chemicals International B.V. Process for modifying polymers
WO2015067533A1 (en) 2013-11-07 2015-05-14 Akzo Nobel Chemicals International B.V. Process for modifying ethylene-based polymers and copolymers
MX357508B (es) 2013-11-07 2018-07-12 Akzo Nobel Chemicals Int Bv Azida de carbonato ciclico.
MX2017013393A (es) 2015-04-24 2018-01-30 Akzo Nobel Chemicals Int Bv Proceso para funcionalizar polimeros.
EP3286253A1 (en) 2015-04-24 2018-02-28 Akzo Nobel Chemicals International B.V. Process for modifying polymers
JP2018146964A (ja) * 2017-03-08 2018-09-20 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012622B2 (ja) * 1977-12-27 1985-04-02 東レ株式会社 ポリアミド系感光性樹脂印刷版用組成物
DE2919823A1 (de) * 1979-05-16 1980-11-20 Siemens Ag N-azidosulfonylaryl-maleinimide sowie deren verwendung
DE2919841A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
JPS5732441A (en) * 1980-08-06 1982-02-22 Unitika Ltd Photosensitive resin composition
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
DE3233912A1 (de) * 1982-09-13 1984-03-15 Merck Patent Gmbh, 6100 Darmstadt Fotolacke zur ausbildung von reliefstrukturen aus hochwaermebestaendigen polymeren

Also Published As

Publication number Publication date
DE3342851A1 (de) 1985-06-05
KR910007246B1 (ko) 1991-09-24
JPH0424694B2 (ko) 1992-04-27
EP0143380B1 (de) 1989-02-15
DE3476779D1 (en) 1989-03-23
JPS60133445A (ja) 1985-07-16
ATE40847T1 (de) 1989-03-15
EP0143380A2 (de) 1985-06-05
EP0143380A3 (en) 1986-07-16

Similar Documents

Publication Publication Date Title
KR850007078A (ko) 친수성 중합체 조성물
JPS5666841A (en) Photographic material
KR850004662A (ko) 포지티브 광저항 조성물
EP0259037A3 (en) Absorbent resin
KR840006080A (ko) 열저항성이 높은 중합체의 안전 구조형성용 광저항제
KR850003992A (ko) 광 저항 조성물
JPS52117985A (en) Photosensitive polymer composition
JPS5595942A (en) Photographic material having carboxylic acid polymer layer
DE3473357D1 (de) Photopolymerizable laminate
KR920007254A (ko) 반도체장치
KR920018183A (ko) 감광성 중합체 재료
KR880013608A (ko) 유화조성물
KR910020489A (ko) 감광성 수지조성물
ATE251647T1 (de) Wärmeformbare acrylfolie
JPS52140591A (en) Novel hydrogenated hydrocarbon resisn
FR2374955A1 (fr) Catalyseur heterogene pour le couplage oxydant de monomeres phenoliques
JPS5233946A (en) Aromatic polyamide films having improved oil permeability
JPS5614232A (en) Negative type resist resin
JPS53134085A (en) Photopolymerizable composition
KR860003586A (ko) 자기 테이프
KR890700851A (ko) 수소다리 형성 조성물
JPS5619044A (en) Positive type resist
JPS551647A (en) Mgnetic recording medium
KR840005565A (ko) 광 저항 조성물
JPS531014A (en) Electronic musical instrument

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19841126

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19891107

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19841126

Comment text: Patent Application

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19910823

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19911219

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19920318

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19920318

End annual number: 3

Start annual number: 1

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee