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KR950030258A - Photomask Manufacturing Method - Google Patents

Photomask Manufacturing Method Download PDF

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Publication number
KR950030258A
KR950030258A KR1019940007618A KR19940007618A KR950030258A KR 950030258 A KR950030258 A KR 950030258A KR 1019940007618 A KR1019940007618 A KR 1019940007618A KR 19940007618 A KR19940007618 A KR 19940007618A KR 950030258 A KR950030258 A KR 950030258A
Authority
KR
South Korea
Prior art keywords
photomask
bias
lithography process
exposure
photomask manufacturing
Prior art date
Application number
KR1019940007618A
Other languages
Korean (ko)
Inventor
함영목
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940007618A priority Critical patent/KR950030258A/en
Publication of KR950030258A publication Critical patent/KR950030258A/en

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Abstract

본 발명은 종래에 사용하고 있던 포토마스크를 스프릿(split)으로 사용하여 새로운 포토마스크를 제작함으로써 공정의 안정화를 가져오며, 리소그래피 공정의 포토 및 식각 바이어스를 최소화하여 소자의 신뢰도 및 수율을 향상시키는 효과가 있다.The present invention is to stabilize the process by producing a new photomask using a conventional photomask as a split (split), the effect of improving the reliability and yield of the device by minimizing the photo and etching bias of the lithography process There is.

Description

포토마스크 제조방법Photomask Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C는 리소그래피 공정의 일예를 도시한 단면도, 제2도는 포토마스크르 투과하는 노광 및 경로를 나타내는 예시도, 제3A도 내지 제3B도는 본 발명의 일실시예에 따른 포토마스크 제조 공정도.1A to 1C are cross-sectional views showing an example of a lithography process, FIG. 2 is an exemplary view showing an exposure and path through a photomask, and FIGS. 3A to 3B are photomask fabrication according to an embodiment of the present invention. Process diagram.

Claims (1)

리소그래피 공정시 사용되는 포토마스크 제조방법에 있어서, 마스크 기판(1')상에 크롬막(2') 및 감광막(5)을 차례로 형성하는 단계; 종래의 포토마스크(10)를 사용하여 노광공정을 수행하되 종래의 포토마스크(10)를 리소그래피 공정에 사용했을 시 발생되는 바이어스가 언더 바이어스를 가지는 경우에는 노광 빛의 에너지를 크게하여 노광하고, 종래의 포토마스크(10)을 리소그래피 공정에 사용했을 시 발생되는 바이어스가 오버 바이어스를 가지는 경우에는 노광 빛의 에너지를 적게하여 노광하는 단계; 현상 공정을 통해 노광된 부위의 감광막(5')을 제거하여 감광막 패턴을 형성하는 단계; 상기 감광막 패턴을 식각장벽으로 하여 크롬막(2')을 식각 패터닝하는 단계를 포함하여 이루어지는 것을 특징으로 하는 포토마스크 제조방법.A photomask manufacturing method used in a lithography process, comprising: sequentially forming a chromium film (2 ') and a photosensitive film (5) on a mask substrate (1'); The exposure process is performed using the conventional photomask 10. However, when the bias generated when the conventional photomask 10 is used in the lithography process has an under bias, the exposure light energy is increased to be exposed. If the bias generated when the photomask 10 of the photolithography 10 is used in the lithography process has an over bias, the exposure is performed by reducing the energy of the exposure light; Forming a photoresist pattern by removing the photoresist 5 'of the exposed portions through a developing process; And etching the chromium film 2 'using the photoresist pattern as an etch barrier. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019940007618A 1994-04-12 1994-04-12 Photomask Manufacturing Method KR950030258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940007618A KR950030258A (en) 1994-04-12 1994-04-12 Photomask Manufacturing Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940007618A KR950030258A (en) 1994-04-12 1994-04-12 Photomask Manufacturing Method

Publications (1)

Publication Number Publication Date
KR950030258A true KR950030258A (en) 1995-11-24

Family

ID=66677445

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940007618A KR950030258A (en) 1994-04-12 1994-04-12 Photomask Manufacturing Method

Country Status (1)

Country Link
KR (1) KR950030258A (en)

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19940412

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid