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KR950004397A - How to remove defects in chrome mask for semiconductor manufacturing - Google Patents

How to remove defects in chrome mask for semiconductor manufacturing Download PDF

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Publication number
KR950004397A
KR950004397A KR1019930014254A KR930014254A KR950004397A KR 950004397 A KR950004397 A KR 950004397A KR 1019930014254 A KR1019930014254 A KR 1019930014254A KR 930014254 A KR930014254 A KR 930014254A KR 950004397 A KR950004397 A KR 950004397A
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KR
South Korea
Prior art keywords
mask
chromium
defects
semiconductor manufacturing
mask defect
Prior art date
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Application number
KR1019930014254A
Other languages
Korean (ko)
Other versions
KR960000187B1 (en
Inventor
함영목
Original Assignee
김주용
현대전자산업 주식회사
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930014254A priority Critical patent/KR960000187B1/en
Publication of KR950004397A publication Critical patent/KR950004397A/en
Application granted granted Critical
Publication of KR960000187B1 publication Critical patent/KR960000187B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 반도체 소자의 제조공정 중 노광공정에서 사용되는 크롬 마스크의 결함 제거방법을 기술한 것으로, 크롬 마스크의 크롬 패턴 사이에 존재하는 마스크 결함을 반도체 노광기술 및 식각기술을 적용하여 제거하므로써, 웨이퍼 공정시 마스크 결함에 의한 공정결함의 발생을 방지하여 반도체 소자의 수율 및 특성을 향상시킬 수 있도록 반도체 제조용 크롬 마스크의 결함을 제거하는 방법이 기술된다.The present invention describes a method for removing defects of a chromium mask used in an exposure process during a manufacturing process of a semiconductor device, wherein a mask defect existing between chromium patterns of a chromium mask is removed by applying semiconductor exposure technology and etching technique, A method of eliminating defects in a chromium mask for semiconductor manufacturing is described so as to prevent the occurrence of process defects due to mask defects during the process, thereby improving the yield and characteristics of the semiconductor device.

Description

반도체 제조용 크롬 마스크의 결함 제거방법How to remove defects in chrome mask for semiconductor manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 노광공정의 기술적 원리를 설명하기 위한 크롬 마스크의 광 투과현상을 나타낸 단면도, 제4A도 내지 제4E도는 본 발명에 의한 반도체 제조용 크롬 마스크의 결함을 제거하는 단계를 도시한 단면도.3 is a cross-sectional view showing the light transmission phenomenon of the chromium mask for explaining the technical principle of the exposure process of the present invention, Figures 4A to 4E is a cross-sectional view showing the step of removing the defect of the chrome mask for semiconductor manufacturing according to the present invention. .

Claims (1)

반도체 소자의 제조공정 중 노광공정에 사용되는 크롬 마스크 제조시 설계 룰에 의해 석영기판(1)상에 형성된 크롬 패턴(2) 사이에 존재하는 마스크 결함(3)을 제거하는 방법에 있어서, 상기 크롬 패턴(2) 및 마스크 결함(3)이 존재하는 석영기판(1)상에 감광막(6)을 전반적으로 도포한 후, 석영기판(1)의 후면을 노광하는 단계와, 상기 노광공정에 의해 노광된부분의 감광막(6B)을 현상공정으로 현상하여 비노광된 감광막(6A)을 패턴화하여 마스크 결함(3)을 노출되게 하는 단계와,상기 현상공정으로 패턴화된 감광막(6A)을 이용하여 식각공정으로 상기 노출된 마스크 결함(3)을 제거한 후, 상기 패턴화된 감광막(6A)을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 제조용 크롬 마스크의 결함 제거방법.In the method of removing the mask defect (3) existing between the chromium pattern (2) formed on the quartz substrate 1 by the design rule in the manufacture of the chromium mask used in the exposure process of the semiconductor device manufacturing process, the chromium After overall application of the photosensitive film 6 on the quartz substrate 1 having the pattern 2 and the mask defect 3 thereon, exposing the rear surface of the quartz substrate 1 and exposing by the above exposure process. Developing the photoresist film 6B of the portion to be developed by the development process to expose the mask defect 3 by patterning the unexposed photoresist film 6A, and using the photoresist film 6A patterned by the development process. Removing the exposed mask defect (3) by an etching process, and then removing the patterned photosensitive film (6A). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014254A 1993-07-27 1993-07-27 How to remove defects in chrome mask for semiconductor manufacturing Expired - Fee Related KR960000187B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014254A KR960000187B1 (en) 1993-07-27 1993-07-27 How to remove defects in chrome mask for semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930014254A KR960000187B1 (en) 1993-07-27 1993-07-27 How to remove defects in chrome mask for semiconductor manufacturing

Publications (2)

Publication Number Publication Date
KR950004397A true KR950004397A (en) 1995-02-18
KR960000187B1 KR960000187B1 (en) 1996-01-03

Family

ID=19360089

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930014254A Expired - Fee Related KR960000187B1 (en) 1993-07-27 1993-07-27 How to remove defects in chrome mask for semiconductor manufacturing

Country Status (1)

Country Link
KR (1) KR960000187B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859732B1 (en) * 2002-07-29 2008-09-23 한라공조주식회사 Heat exchanger assembly

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755077B1 (en) * 2006-06-29 2007-09-06 주식회사 하이닉스반도체 How to fix pattern defects in photo masks

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859732B1 (en) * 2002-07-29 2008-09-23 한라공조주식회사 Heat exchanger assembly

Also Published As

Publication number Publication date
KR960000187B1 (en) 1996-01-03

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