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KR950025502A - 정전압 회로 - Google Patents

정전압 회로 Download PDF

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Publication number
KR950025502A
KR950025502A KR1019940002235A KR19940002235A KR950025502A KR 950025502 A KR950025502 A KR 950025502A KR 1019940002235 A KR1019940002235 A KR 1019940002235A KR 19940002235 A KR19940002235 A KR 19940002235A KR 950025502 A KR950025502 A KR 950025502A
Authority
KR
South Korea
Prior art keywords
transistor
constant voltage
transistors
resistor
voltage
Prior art date
Application number
KR1019940002235A
Other languages
English (en)
Other versions
KR960002457B1 (ko
Inventor
박승균
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019940002235A priority Critical patent/KR960002457B1/ko
Priority to US08/271,816 priority patent/US5532579A/en
Priority to DE4427052A priority patent/DE4427052B4/de
Priority to JP6187230A priority patent/JP2704245B2/ja
Publication of KR950025502A publication Critical patent/KR950025502A/ko
Application granted granted Critical
Publication of KR960002457B1 publication Critical patent/KR960002457B1/ko

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

본 발명은 정전압회로에 관한 것으로, 종래에는 2.OV이하의 전원전압하에서는 정전압을 얻을 수 없는 문제점을 해결하기 위하여 1.2V의 저전압하에서도 정전압 출력을 얻을 수 있도록 트랜지스터(Q16)의 베이스와 콜렉터에 트랜지스터(Q17, Q18, Q19, Q20)의 베이스가 연결된 커런트 미러부(10)와, 상기 커런트 미러부(10)의 출력이 안정되도록 상기 트랜지스터(Q17, Q18)과 각각 연결된 트랜지스터(Q13, Q14)의 베이스 에미터간 전압차를 트랜지스터(Q11, Q12)를 통해 피드백 시키는 기준전류발생부(20)와, 상기 커런트 미러부(10)의 트랜지스터(Q20)의 콜렉터에 콜렉터와 베이스가 연결됨과 동시에 저항 Rl3과 저항 Rl4가 직렬연결되며 에미터는 접지되도록 트랜지스터(Q15)가 연결되며, 상기 저항 Rl3, Rl4의 일측단자가 연산증폭기(op1)의 비반전입력단자(+)에 연결되며 또한 저항 Rl4의 타측은 접지전원과 연결되며, 상기 연산증폭기(op1)이 저항 Rl5를 통해 커런트 미러부(10)의 트랜지스터(Q20)의 콜렉터에 연결되어 상기 저항 Rl3와 Rl4의 값과 트랜지스터(Q15)의 베이스에 미터간 전압을 조절하여 저전원전압 하에서도 정전압을 발생시키는 정전압발생부(30)와, 상기 연산증폭기(op1)의 출력을 증폭시키는 연산증폭기(op2)로 구성되어, 1.2V 이상의 전원전압에서뿐만 아니라 저전원전압하에서도 온도계수가 0인 정전압을 구현할 수 있다.

Description

정전압 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 정전압 회로를 도시한 회로도.

Claims (1)

  1. 트랜지스터(Q16)의 베이스와 콜렉터에 트랜지스터(Q17, Q18, Q19, Q20)의 베이스가 연결된 커런트 미러부(10)와, 상기 커런트 미러부(10)의 출력이 안정되도록 상기 트랜지스터(Q17, Q18)과 각각 연결된 트랜지스터(Q13, Q14)의 베이스 에미터간 전압차를 트랜지스터(Q11)와 트랜지스터(Q12)를 통해 피드백 시키는 기준전류 발생부(20)와, 상기 커런트 미러부(10)의 트랜지스터(Q20)의 콜렉터에 트랜지스터(Q15)의 콜렉터와 베이스가 연결됨과 동시에 저항 Rl3과 저항 Rl4가 직렬연결되며 에미터는 접지되고, 상기 저항 Rl3와 저항Rl4의 일측단자가 연산증폭기(op1)의 비반전입력단자(+)에 연결되며 또한 저항 Rl4의 타측은 접지전원과 연결되며, 상기 연산증폭기(op1) 이 저항 Rl5를 통해 커런트 미러부(10)의 트랜지스터(Q20)의 콜렉터에 연결되어 상기 저항 Rl3와 Rl4의 값과 트랜지스터(Q15)의 베이스 에미터간 전압을 조절하여 정전압을 발생시키는 정전압발생부(30)와, 상기 연산증폭기(op1)의 출력운 중폭시키는 연산증폭기(op2)로 구성된 것을 특징으로 하는 정전압회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002235A 1994-02-07 1994-02-07 정전압회로 KR960002457B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940002235A KR960002457B1 (ko) 1994-02-07 1994-02-07 정전압회로
US08/271,816 US5532579A (en) 1994-02-07 1994-07-07 Temperature stabilized low reference voltage generator
DE4427052A DE4427052B4 (de) 1994-02-07 1994-07-29 Referenzspannungsgenerator
JP6187230A JP2704245B2 (ja) 1994-02-07 1994-08-09 基準電圧発生回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940002235A KR960002457B1 (ko) 1994-02-07 1994-02-07 정전압회로

Publications (2)

Publication Number Publication Date
KR950025502A true KR950025502A (ko) 1995-09-18
KR960002457B1 KR960002457B1 (ko) 1996-02-17

Family

ID=19376915

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002235A KR960002457B1 (ko) 1994-02-07 1994-02-07 정전압회로

Country Status (4)

Country Link
US (1) US5532579A (ko)
JP (1) JP2704245B2 (ko)
KR (1) KR960002457B1 (ko)
DE (1) DE4427052B4 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856742A (en) * 1995-06-30 1999-01-05 Harris Corporation Temperature insensitive bandgap voltage generator tracking power supply variations
FR2737319B1 (fr) * 1995-07-25 1997-08-29 Sgs Thomson Microelectronics Generateur de reference de tension et/ou de courant en circuit integre
US5694033A (en) * 1996-09-06 1997-12-02 Lsi Logic Corporation Low voltage current reference circuit with active feedback for PLL
US5726563A (en) * 1996-11-12 1998-03-10 Motorola, Inc. Supply tracking temperature independent reference voltage generator
US6124753A (en) * 1998-10-05 2000-09-26 Pease; Robert A. Ultra low voltage cascoded current sources
US6144250A (en) * 1999-01-27 2000-11-07 Linear Technology Corporation Error amplifier reference circuit
US6285256B1 (en) 2000-04-20 2001-09-04 Pericom Semiconductor Corp. Low-power CMOS voltage follower using dual differential amplifiers driving high-current constant-voltage push-pull output buffer
US7071770B2 (en) * 2004-05-07 2006-07-04 Micron Technology, Inc. Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of generating a bias reference
KR100738957B1 (ko) * 2005-09-13 2007-07-12 주식회사 하이닉스반도체 반도체 집적회로의 내부전압 발생장치
US7764059B2 (en) * 2006-12-20 2010-07-27 Semiconductor Components Industries L.L.C. Voltage reference circuit and method therefor
US7893754B1 (en) * 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit
KR101917187B1 (ko) * 2012-05-04 2018-11-09 에스케이하이닉스 주식회사 기준전압 발생기

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4091321A (en) * 1976-12-08 1978-05-23 Motorola Inc. Low voltage reference
JPS5880718A (ja) * 1981-11-06 1983-05-14 Mitsubishi Electric Corp 基準電圧発生回路
US4396883A (en) * 1981-12-23 1983-08-02 International Business Machines Corporation Bandgap reference voltage generator
US4525663A (en) * 1982-08-03 1985-06-25 Burr-Brown Corporation Precision band-gap voltage reference circuit
JPS63177214A (ja) * 1987-01-19 1988-07-21 Sanyo Electric Co Ltd 基準電圧発生回路
JPH0680486B2 (ja) * 1989-08-03 1994-10-12 株式会社東芝 定電圧回路
EP0525245A1 (en) * 1991-08-01 1993-02-03 NOVAMONT S.p.A. Disposable absorbent articles
US5325045A (en) * 1993-02-17 1994-06-28 Exar Corporation Low voltage CMOS bandgap with new trimming and curvature correction methods

Also Published As

Publication number Publication date
JPH07225628A (ja) 1995-08-22
KR960002457B1 (ko) 1996-02-17
US5532579A (en) 1996-07-02
DE4427052B4 (de) 2005-08-04
DE4427052A1 (de) 1995-08-10
JP2704245B2 (ja) 1998-01-26

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