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KR940008316B1 - Electrobond of Wire Bonder - Google Patents

Electrobond of Wire Bonder Download PDF

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Publication number
KR940008316B1
KR940008316B1 KR1019910023985A KR910023985A KR940008316B1 KR 940008316 B1 KR940008316 B1 KR 940008316B1 KR 1019910023985 A KR1019910023985 A KR 1019910023985A KR 910023985 A KR910023985 A KR 910023985A KR 940008316 B1 KR940008316 B1 KR 940008316B1
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South Korea
Prior art keywords
wire
electroid
ring
tip
gold wire
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KR1019910023985A
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Korean (ko)
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KR930014913A (en
Inventor
안태귀
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금성일렉트론 주식회사
문정환
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Priority to KR1019910023985A priority Critical patent/KR940008316B1/en
Priority to JP4340202A priority patent/JPH05243315A/en
Publication of KR930014913A publication Critical patent/KR930014913A/en
Application granted granted Critical
Publication of KR940008316B1 publication Critical patent/KR940008316B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음.No content.

Description

와이어본더의 일렉트로이드Electrobond of Wire Bonder

제1도는 통상적인 일렉트로이드의 장착 구조를 보인 측면도.1 is a side view showing a mounting structure of a conventional electroroid.

제2도는 본 발명에 의한 링형 일렉트로이드의 장착 구조를 보인 측면도.2 is a side view showing the mounting structure of the ring-shaped electroid according to the present invention.

제3도는 본 발명에 의한 링형 일렉트로이드의 요부 구조를 상세하게 보이는 제2도의 A부 저면도.FIG. 3 is a bottom view of the A portion of FIG. 2 showing in detail the main structure of the ring-shaped electroid according to the present invention. FIG.

제4도는 본 발명에 의한 링형 일렉트로이드의 전기적인 회로도.4 is an electrical circuit diagram of a ring type electroid according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 금선(Gold wire) 2 : 캐필러리(Capillary)1: Gold wire 2: Capillary

10 : 일렉트로이드의 링형 팁10: ring tip of an electroid

본 발명은 반도체 패키지 제조공정 중 와이어본딩 공정에 사용되는 와이어본더(wire bonder)의 일렉트로이드(Electrode) 구조에 관한 것으로, 특히 금선(Gold wire)을 공급하는 캐필러리(Capillary)와 인접하게 배치되어 스파크 방전을 일으키는 일렉트로이드의 팁(Tip)을 링형(Ring Type)으로 변경하여 일렉트로이드와 금선사이의 간격이 항상 일정하게 유지되도록 함으로써 일정한 초기볼(initial ball) 형성에 적합하도록 한 와이어본더의 일렉트로이드에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an electrode structure of a wire bonder used in a wire bonding process in a semiconductor package manufacturing process, and in particular, is disposed adjacent to a capillary supplying a gold wire. Of the wire bonder, which is suitable for the formation of a constant initial ball by changing the tip of the electroid causing spark discharge to a ring type so that the gap between the electroid and the gold wire is kept constant at all times. It's about id.

통상 반도체칩과 리드프레임의 인너리드를 금선(Gold wire)으로 연결하는 장비인 와이어본더(wire bonder)는 그 내부에 장착된 일렉트로이드(Electrode)의 고전압 스파크 방전에 의해 초기볼(Initial)을 형성하여 와이어본딩을 수행하게 되어 있는바, 상기 일렉트로이드는 제1도에 도시한 바와 같이 금선(1)을 공급하는 캐필러리(2)와 인접하게 배치되어 일렉트로이드 선단의 팁(3)에서 발생하는 고전압(2000V∼4000V)과, 상기 금선(1)의 전위제로(Zero)볼트와의 차이에 의하여 스파크 방전을 일으키도록 장착되어 있다.In general, a wire bonder, which is a device for connecting an inner lead of a semiconductor chip and a lead frame with a gold wire, forms an initial ball by high voltage spark discharge of an electrode mounted therein. As the wire bonding is performed, the electroroid is disposed adjacent to the capillary 2 for supplying the gold wire 1 as shown in FIG. 1 and is generated at the tip 3 of the tip of the electroroid. And a spark discharge due to a difference between the high voltage (2000V to 4000V) and the zero potential of the gold wire 1.

도면중 미설명 부호 4는 와이어클램프, 5는 일렉트로이드클램프, 6은 케이블, 7은 고정나사를 각각 보인 것이다.In the drawings, reference numeral 4 is a wire clamp, 5 is an electrolytic clamp, 6 is a cable, and 7 is a fixing screw.

상기와 같은 스파크 방전에 의하여 금선(1)의 용융점(Melting pcint : 1063℃)이상의 온도를 유지시켜 초기볼을 형성하여 와이어본딩을 실시하게 되어있다.By the spark discharge as described above, by maintaining the temperature above the melting point (Melting pcint: 1063 ℃) of the gold wire (1) to form an initial ball to bond the wire.

이때, 금선(1)의 일정한 초기볼 형성을 위하여서는 상기 일렉트로이드의 위치가 정확하게 장착되어야 하는 바, 통상 일렉트로이드의 팀(3)과 금선(1)과의 측간극(도면에서 S.G로 표시함)이 0.001", 상, 하간의 간극(도면에서 H.G로 표시함)은 0.010"-0.025"가 유지되도록 일렉트로이드를 장착하여야만 일정한 초기볼이 형성되어 와이어본딩을 아무런 문제없이 수행할 수 있게되어 있는 것이다.At this time, in order to form a constant initial ball of the gold wire 1, the position of the electroroid should be correctly mounted, and the side gap between the team 3 of the electroroid and the gold wire 1 (indicated by SG in the drawing) ), 0.001 ", the gap between the upper and lower (indicated by HG in the drawing) must be equipped with an electroroid to maintain 0.010" -0.025 "so that a uniform initial ball is formed so that wire bonding can be performed without any problem. will be.

그러나, 종래의 일렉트로이드는 상기의 조건(예컨데 측간극 0.001", 상, 하간극 0.010"-0.025")을 만족하도록 정확한 위치에 장착하기가 어려울 뿐만 아니라 작업초기에 정확한 위치에 셋팅시켰다 할지라도 작업도중 위치가 변화되어 상기의 간극(S.G), (H.G)이 틀려질 수 있고, 이에따라 초기불의 크기가 변화되며, 결국 노와 이어(No wire)불량을 야기시키게 되는 결함이 있었다.However, conventional electroids are difficult to mount in the correct position to satisfy the above conditions (e.g., side gap 0.001 ", upper and lower gap 0.010" -0.025 "), and even if they are set to the correct position at the beginning of the work, The gaps SG and HG may be misaligned, and thus the size of the initial fire may be changed, resulting in a defect of no wire.

따라서 본 발명은 상기한 바와 같은 종래의 결함을 해소하기 위하여 창안한 것으로 일렉트로이드와, 캐필러리를 통해 공급되는 금선과의 간극(S.G), (H.G)이 항상 일정하게 유지되도록 하여 일정한 초기볼 형성으로 와이어본딩의 품질을 향상시킬 수 있도록 한 와이어본더의 링형 일렉트로이드를 제공하는데 목적이 있다.Therefore, the present invention was devised to solve the conventional defects as described above, so that the gap (SG) and (HG) between the electroid and the gold wire supplied through the capillary are always kept constant so as to maintain a constant initial ball. It is an object of the present invention to provide a ring-type electroid of a wire bonder which can improve the quality of wire bonding by forming.

상기와 같은 본 발명의 목적은 고전압을 발생시키는 일렉트로이드의 팁을 링형으로 형성하여 캐필러리를 통행 공급되는 금선이 상기 링형 팁의 내부를 통해 와이어본딩되게 함으로써 일렉트로이드와 금선 사이의 간극이 항상 일정하게 유지되도록 함과 아울러한점이 아닌 단점에서 스파크 방전을 일으킬 수 있도록 구성함을 특징으로 하는 와이어본더의 링형 일렉트로이드를 제공함으로써 달성되는 것이다.The object of the present invention as described above is to form a tip of the electrostatic generating a high voltage in a ring shape so that the gold wire supplied through the capillary wire-bonded through the inside of the ring-shaped tip so that the gap between the electroroid and the gold wire is always It is achieved by providing a ring-type electroid of a wire bonder, characterized in that it is maintained to be constant and configured to cause spark discharge in a disadvantage, not one point.

상기와 같은 본 발명에 의하면 일렉트로이드와 금선과의 간극이 항상 일정하게 유지되므로 일정한 초기볼을 형성할 수 있고 이에따라 노와이어(No wire)불량을 방지할 수 있으며 와이어본딩의 품질을 향상시킬 수 있는 특징이 있다.According to the present invention as described above, since the gap between the electroid and the gold wire is always kept constant, it is possible to form a constant initial ball, thereby preventing no wire defects and improving the quality of wire bonding. There is this.

이하에서는 이러한 본 고안을 첨부한 도면에 의거하여 보다 상세하게 설명하겠다.Hereinafter, on the basis of the accompanying drawings of the present invention will be described in more detail.

제2도는 본 발명에 의한 링형 일렉트로이드의 장착구조를 보인 측면도이고, 제3도는 링형 일렉트로이드의 요부 구성을 상세하게 보인 제2도의 A부 저면도이며, 제4도는 본 발명에 의한 링형 일렉트로이드의 전기적인 회로도로서 이에 도시한 바와 같이 통상적인 와이어본더에 있어서, 금선(1)을 공급하는 캐필러리(2)와 인접하게 배치되어 스파크 방전을 야기시키는 일렉트로이드의 팁(10)을 링형(Ring Type)구조로 하여 금선(1)과의 간극이 항상 일정하게 유지되도록 함과 아울러 2점 이상에서 스파크 방전이 일어나도록 구성한 것으로 도면에서 종래 구성과 동일한 부분에 대해서는 동일부호를 표시하였다.FIG. 2 is a side view showing the mounting structure of the ring-type electroid according to the present invention, and FIG. 3 is a bottom view of the part A of FIG. 2 showing the main constitution of the ring-type electroid, and FIG. 4 is a ring-type electroid according to the present invention. As shown here, in the conventional wire bonder, the tip 10 of the electroid disposed adjacent to the capillary 2 for supplying the gold wire 1 and causing spark discharge is ring-shaped. Ring type) structure is such that the gap with the gold wire 1 is always kept constant and spark discharge occurs at two or more points. In the drawings, the same reference numerals are given to the same parts as in the conventional configuration.

상기 팁(10)은 그 지름(D)이 0.07" 정도로 소정의 두께(t)를 가지도록 형성함이 바람직하다. 또한 상기 팁(10)은 그 구조를 다각형으로 형성할 수도 있다.The tip 10 is preferably formed such that the diameter D has a predetermined thickness t of about 0.07 ". The tip 10 may also have a polygonal structure.

이와 같이 구성되는 본 발명에 의한 링형 일렉트로이드는 종래와 마찬가지로 금선(1)을 공급하는 캐필러리(2)에 인접하게 배치되어 금선(1)의 제로전압과 일렉트로이드에서 발생되는 고전압(2000-4000V)과의 전위차에 의한 스파크 방전으로 초기 볼을 형성하여 주는 과정은 종래와 동일유사하나 캐필러리(2)가 링형 일렉트로이드의 팁(10) 내부를 통해 와이어본딩을 실시하므로 일렉트로이드와 금선(1) 사이의 간극을 항상 일정하게 유지시켜 줄 수 있고 이에따라 항상 일정한 초기볼 형성으로 와이어본딩의 품질을 높일 수 있으며, 일렉트로이드의 장착조건 및 위치를 외부에서 용이하게 확인할 수 있는 것이다.The ring type electroid according to the present invention configured as described above is disposed adjacent to the capillary 2 for supplying the gold wire 1 as in the prior art, and the zero voltage of the gold wire 1 and the high voltage generated in the electroroid (2000-). The process of forming the initial ball by the spark discharge due to the potential difference with 4000V) is similar to the conventional one, but since the capillary 2 performs wire bonding through the inside of the tip 10 of the ring type electroid, the electroid and the gold wire (1) can keep the gap always constant, and accordingly, it is possible to improve the quality of wire bonding by always forming a constant initial ball, and it is easy to check the mounting conditions and positions of the electroroid from the outside.

이상에서 상세히 설명한 바와 같이 본 발명에 의한 링형 일렉트로이드에 의하면, 캐필러리가 링타입의 일렉트로이드 팁 내부를 통해 와이어본딩을 실시하므로 일렉트로이드와 금선과의 간극을 일정하게 유지시켜줄 수 있고 결국 향상 일정한 초기볼 형성으로 와이어본딩의 품질을 높일 수 있는 효과가 있다.As described in detail above, according to the ring-type electroid according to the present invention, since the capillary performs wire bonding through the inside of the ring-type electroid tip, it is possible to maintain a constant gap between the electroid and the gold wire and eventually improve the constant Initial ball formation has the effect of improving the quality of wire bonding.

아울러 일렉트로이드의 장착조건 및 위치를 육안으로 용이하게 확인할 수 있는 효과가 있다.In addition, there is an effect that can be easily identified with the naked eye mounting conditions and locations.

Claims (2)

통상적인 와이어본더에 있어서, 금선(1)을 공급하는 캐필러리(2)와 인접하게 배치되어 고전압을 발생시켜 스파크 방전을 야기시키는 일렉트로이드의 팁(10)을 링형 구조로 하여, 금선(1)과의 간극이 항상 일정하게 유지되도록 함과 아울러 2점 이상에서 스파크 방전이 일어나도록 한 것임을 특징으로 하는 와이어본더의 일렉트로이드.In a conventional wire bonder, a gold wire (1) has a ring-shaped structure in which the tip (10) of the electroid is disposed adjacent to the capillary (2) supplying the gold wire (1) to generate a high voltage and cause spark discharge. The gap between the wire bonder and the wire bonder is characterized by the fact that the gap is always kept constant and spark discharge occurs at two or more points. 제1항에 있어서, 상기 팁(10)은 다각형 구조인 것임을 특징으로 하는 와이어본더의 일렉트로이드.2. The electroid of claim 1, wherein the tip is a polygonal structure.
KR1019910023985A 1991-12-23 1991-12-23 Electrobond of Wire Bonder KR940008316B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019910023985A KR940008316B1 (en) 1991-12-23 1991-12-23 Electrobond of Wire Bonder
JP4340202A JPH05243315A (en) 1991-12-23 1992-12-21 Electrode of wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023985A KR940008316B1 (en) 1991-12-23 1991-12-23 Electrobond of Wire Bonder

Publications (2)

Publication Number Publication Date
KR930014913A KR930014913A (en) 1993-07-23
KR940008316B1 true KR940008316B1 (en) 1994-09-12

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KR1019910023985A KR940008316B1 (en) 1991-12-23 1991-12-23 Electrobond of Wire Bonder

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JP (1) JPH05243315A (en)
KR (1) KR940008316B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004064033A (en) * 2001-10-23 2004-02-26 Sumitomo Electric Wintec Inc Bonding wire
JP2005123499A (en) * 2003-10-20 2005-05-12 Sumitomo Electric Ind Ltd Bonding wire and integrated circuit device using the same
JP6327420B2 (en) 2015-03-31 2018-05-23 本田技研工業株式会社 Clutch control device

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JPH05243315A (en) 1993-09-21
KR930014913A (en) 1993-07-23

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