KR930022555A - 루테늄산염 전극을 갖는 커패시터 - Google Patents
루테늄산염 전극을 갖는 커패시터Info
- Publication number
- KR930022555A KR930022555A KR1019930005854A KR930005854A KR930022555A KR 930022555 A KR930022555 A KR 930022555A KR 1019930005854 A KR1019930005854 A KR 1019930005854A KR 930005854 A KR930005854 A KR 930005854A KR 930022555 A KR930022555 A KR 930022555A
- Authority
- KR
- South Korea
- Prior art keywords
- capacitor
- layer
- electrode
- formed over
- electrode region
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 11
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (1)
- 루테늄산염 물질로 형성된 제1부분(20또는18)을 갖는 제1전극(20,18)과, 제2전극(26)과, 제1전극과 제2전극사이에 형성된 유전체 물질(22)을 포함하는 것을 특징으로 하는 커패시퍼(10).※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/875,463 US5185689A (en) | 1992-04-29 | 1992-04-29 | Capacitor having a ruthenate electrode and method of formation |
US875,463 | 1992-04-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930022555A true KR930022555A (ko) | 1993-11-24 |
KR100290223B1 KR100290223B1 (ko) | 2001-06-01 |
Family
ID=25365852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930005854A KR100290223B1 (ko) | 1992-04-29 | 1993-04-08 | 루테늄산염 전극을 갖는 커패시터 및 그 형성방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5185689A (ko) |
JP (1) | JP3327486B2 (ko) |
KR (1) | KR100290223B1 (ko) |
Families Citing this family (64)
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KR0141160B1 (ko) * | 1995-03-22 | 1998-06-01 | 김광호 | 강유전체 메모리 장치 및 그 제조방법 |
KR0147639B1 (ko) * | 1995-05-29 | 1998-08-01 | 김광호 | 고유전율 캐패시터의 하부전극 형성방법 |
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KR100199094B1 (ko) * | 1995-10-18 | 1999-06-15 | 구본준 | 반도체 소자의 커패시터 제조방법 |
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KR100200704B1 (ko) | 1996-06-07 | 1999-06-15 | 윤종용 | 강유전체 메모리 장치 및 그 제조 방법 |
US5990507A (en) * | 1996-07-09 | 1999-11-23 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor structures |
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KR100246967B1 (ko) * | 1997-04-16 | 2000-03-15 | 윤종용 | 반도체 커패시터 제조장치, 커패시터 형성방법 및 그에 의하여 형성된 커패시터와 그 커패시터를 포함하는 반도체 메모리장치 |
DE69810691T2 (de) | 1997-04-30 | 2003-08-07 | Seiko Epson Corp., Tokio/Tokyo | Tintenstrahlaufzeichnungskopf |
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KR100269309B1 (ko) * | 1997-09-29 | 2000-10-16 | 윤종용 | 고집적강유전체메모리장치및그제조방법 |
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KR101100427B1 (ko) * | 2005-08-24 | 2011-12-30 | 삼성전자주식회사 | 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법 |
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US20090034156A1 (en) * | 2007-07-30 | 2009-02-05 | Takuya Yamamoto | Composite sheet |
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US8542475B2 (en) * | 2009-10-09 | 2013-09-24 | The Penn State Research Foundation | Self healing high energy glass capacitors |
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JPS5789264A (en) * | 1980-11-26 | 1982-06-03 | Hitachi Ltd | Ruthenium complex covered electrode |
JP2514032B2 (ja) * | 1987-05-08 | 1996-07-10 | ペルメレック電極 株式会社 | 金属の電解処理方法 |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
US5003428A (en) * | 1989-07-17 | 1991-03-26 | National Semiconductor Corporation | Electrodes for ceramic oxide capacitors |
US5122923A (en) * | 1989-08-30 | 1992-06-16 | Nec Corporation | Thin-film capacitors and process for manufacturing the same |
-
1992
- 1992-04-29 US US07/875,463 patent/US5185689A/en not_active Expired - Lifetime
-
1993
- 1993-04-08 KR KR1019930005854A patent/KR100290223B1/ko not_active IP Right Cessation
- 1993-04-23 JP JP11926593A patent/JP3327486B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0621341A (ja) | 1994-01-28 |
JP3327486B2 (ja) | 2002-09-24 |
KR100290223B1 (ko) | 2001-06-01 |
US5185689A (en) | 1993-02-09 |
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