[go: up one dir, main page]

KR930009645B1 - Protective film material of optical disk - Google Patents

Protective film material of optical disk Download PDF

Info

Publication number
KR930009645B1
KR930009645B1 KR1019880014266A KR880014266A KR930009645B1 KR 930009645 B1 KR930009645 B1 KR 930009645B1 KR 1019880014266 A KR1019880014266 A KR 1019880014266A KR 880014266 A KR880014266 A KR 880014266A KR 930009645 B1 KR930009645 B1 KR 930009645B1
Authority
KR
South Korea
Prior art keywords
protective film
film material
layer
optical disk
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019880014266A
Other languages
Korean (ko)
Other versions
KR900006924A (en
Inventor
문범기
Original Assignee
주식회사 금성사
최근선
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 금성사, 최근선 filed Critical 주식회사 금성사
Priority to KR1019880014266A priority Critical patent/KR930009645B1/en
Publication of KR900006924A publication Critical patent/KR900006924A/en
Application granted granted Critical
Publication of KR930009645B1 publication Critical patent/KR930009645B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers

Landscapes

  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

내용 없음.No content.

Description

광디스크의 보호막재료Protective film material of optical disk

제 1 도는 기존의 콤팩트디스크(CD) 및 비디오디스크(VD)의 단면도.1 is a cross-sectional view of a conventional compact disc (CD) and a video disc (VD).

제 2 도는 기존 WORM형 디스크의 단면도.2 is a cross-sectional view of an existing WORM type disk.

제 3a, b 도는 기존 소거가능형 디스크를 보인 단면도로서, a 도는 광자기디스크 단면도. b 도는 상변이 광디스크 단면도.3A and 3B are cross-sectional views showing a conventional erasable disk, and a or a magneto-optical disk cross section. b Turning cross-sectional optical disc cross section.

제 4 도 및 제 5 도는 본 발명에 의한 보호막재료가 보호층으로 형성된 양면디스크 단면도로서, 제 4 도는 광자기디스크를 보인 것.4 and 5 are cross-sectional views of a double-sided disk in which the protective film material according to the present invention is formed of a protective layer, and FIG. 4 shows a magneto-optical disk.

제 5 도는 광디스크를 보인 것.5 shows an optical disc.

제 6 도는 본 발명에 의한 보호막재료가 보호층으로 형성된 단면디스크의 단면도.6 is a cross-sectional view of a sectional disk in which a protective film material according to the present invention is formed of a protective layer.

제 7 도 및 제 8 도는 본 발명에 따른 성능시험 결과를 보인 그래프.7 and 8 are graphs showing the results of the performance test according to the present invention.

본 발명은 광디스크의 보호막재료에 관한 것으로, 특히 광디스크의 기판 및 기존 보호막과의 접착성이 양호하고 유전체로 이루어진 무기물의 성분조절에 의하여 광투과도를 변화시킴으로서 회전각을 증대시켜 출력신호의 SNR을 향상할 수 있게한 고성능 광디스크의 보호막재료에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protective film material of an optical disk, and in particular, has good adhesion to a substrate and an existing protective film of an optical disk, and improves the SNR of an output signal by increasing the rotation angle by changing the light transmittance by controlling the composition of an inorganic material made of a dielectric. The protective film material of the high performance optical disk which made it possible to do it is related.

종래의 광디스크는 콤팩트디스크, 비디오디스크, WORM(Write Once Read Many)형 광학디스크, 소거가능형 광학디스크의 4가지로 구별할 수 있는 바, 이들의 통상적인 단면구조가 제 1 도 내지 제 3 도에 도시되어 있다.Conventional optical discs can be classified into four types: compact discs, video discs, write once read many (WORM) type optical discs, and erasable type optical discs. Is shown.

이에서 알 수 있는 바와같이, 제 1 도의 콤팩트디스크와 비디오디스크 경우에는 상당히 단순한 구조를 가지고 있다. 도면에서 A는 PC(Poly-Carbonate)기판, B는 A1반사막, C는 보호막인 래커(Lacquar)층을 보인 것이다.As can be seen from this, in the case of the compact disc and the video disc of FIG. 1, the structure is quite simple. In the drawing, A is a PC (Poly-Carbonate) substrate, B is an A1 reflective film, and C is a lacquer (Lacquar) layer which is a protective film.

제 2 도는 WORM형 광디스크로서 도면에서 D는 PMMA기판, E는 에어갭(air gap), F는 광기록재료층을 보인 것이고, G는 유전체 재료로 된 보호막을 보인 것이다. 이는 Te베이스합금(Te-based alloy)을 사용하며 자발적으로 산화하게 된다.2 is a WORM type optical disk, in which D is a PMMA substrate, E is an air gap, F is an optical recording material layer, and G is a protective film made of a dielectric material. It uses a Te-based alloy and oxidizes spontaneously.

제 3a 도는 기존의 소거가능형 광자기 디스크를 보인 것으로, A는 PC기판이고, G'는 유전체층이며, H는 기록막이고, G"는 유전체물질로된 보호막이다.3A shows a conventional erasable magneto-optical disk, where A is a PC substrate, G 'is a dielectric layer, H is a recording film, and G " is a protective film made of a dielectric material.

제 3b 도는 연구중의 소거가능형 상변이 광디스크로서 제 3a 도의 광자기디스크와 틀린것은 기록층(Ⅰ)재료, G'층의 유무이다. 이러한 구조의 제작은 주로 증착, 스퍼터링이 이용되고 대개의 경우 보호막은 스피터링에 의해 형성된다.3b is different from the magneto-optical disk of FIG. 3a as an erasable type-phase optical disk under study, in which the recording layer (I) material and the G 'layer are present. The fabrication of such a structure is mainly carried out by deposition and sputtering, and in most cases the protective film is formed by sputtering.

상기한 바와같은 광디스크들에 사용되는 재료들과 이에 내포된 단점을 살펴보면 다음과 같다.Looking at the materials used in the optical disks as described above and the drawbacks included therein are as follows.

상기 광디스크 사용재료를 먼저 살펴보면 주로 기판은 PC, PMMA를 사용하고 WORM형과 소거가능형에서는 프리그르부(Pregrooved)기판을 사용하게 된다. 기록층은 콤팩트디스크, 비디오디스크의 경우 Al반 사막, WORM의 경우 Te베이스합금, 소거가능형 중 광자기디스크 RE(rare earth)-TM(transition metal), 상변이형은 TeOx를 사용한다. 그리고 유전체/보호막재료는 SiO2, SiO, SiN, Si3N4, AlN, ZnS등으로 선택사용한다.Looking at the material used for the optical disk first, PC and PMMA are mainly used as substrates, and pregrooved substrates are used in WORM type and erasable type. The recording layer uses a compact disc, an Al half desert for a video disc, a Te base alloy for a WORM, a magneto-optical disc, a rare earth RE-TM (transition metal), and a TeOx for a phase change type. The dielectric / protective film material is selected by using SiO 2 , SiO, SiN, Si 3 N 4 , AlN, ZnS.

상기한 바와같은 광디스크에 있어서, WORM형 소거가능형 광디스크의 경우에는 기록층 재료가 산화 및 부식환경에 몹시 약하여 정보기록비트(bit)의 재료가 변화되므로 SNR을 저하시킨다. 또한 기록시, 또는 기록/소거시에 기판과 보호막 사이에서, 또는 기판과 기록층 사이에서 열팽창/습도팽창 계수의 차이로 정보가 손실되며, 광디스크의 경우에 SNR을 이루는 커(Kerr)회전각이 작다.In the optical disc as described above, in the case of the WORM type erasable optical disc, the recording layer material is very weak to the oxidizing and corrosive environment, so that the material of the information recording bit is changed, thereby reducing the SNR. In addition, information is lost due to a difference in coefficient of thermal expansion / humidity expansion between the substrate and the protective film during recording, or during recording / erasing, or between the substrate and the recording layer, and in the case of an optical disc, small.

결국 종래기술에 의해 제작되는 광디스크는 출력신호의 SNR이 낮아지는 근본적인 문제점이 있었다.As a result, the optical disk manufactured according to the prior art has a fundamental problem that the SNR of the output signal is lowered.

본 발명은 상기한 바와같은 종래의 결함을 해소할 수 있는 광디스크 보호막재료를 제공하고자 함에 목적이 있다.It is an object of the present invention to provide an optical disc protective film material capable of eliminating the above-described conventional defects.

본 발명의 다른 목적은 상기 보호막재료로 보호층을 형성한 광디스크를 제공하려는 것이다.Another object of the present invention is to provide an optical disc in which a protective layer is formed of the protective film material.

본 발명에 의한 보호막재료는 불소(F)가 함유된 유기물과 유전체로된 무기물 합성체로서, 이에 포함된 불소성분이 선천적으로 수증기와 산소입자의 통과를 방지하는 성질이 있어서, 외부로부터 수증기, 산소입자들이 본 발명보호막재료로 된 보호막층을 통과하지 못하므로 기록층재료의 산화 및 부식을 방지할 수 있다.The protective film material according to the present invention is an inorganic compound composed of an organic material and a dielectric containing fluorine (F), and the fluorine component contained therein has a property of preventing the passage of water vapor and oxygen particles, thereby preventing water vapor and oxygen from the outside. Since the particles do not pass through the protective film layer of the protective film material of the present invention, oxidation and corrosion of the recording layer material can be prevented.

상기 불소함유의 유기물은 주로 테프론으로서 구조식은 다음과 같이 쇠사슬 구조이고 학명은 Tetrafluoroethylene Polymer이며, 상품명이 테프론(Teflon) 또는 플루온(Fluon)이다.The fluorine-containing organic material is mainly Teflon, the structural formula is a chain structure as follows, the scientific name is Tetrafluoroethylene Polymer, trade name is Teflon (Teflon) or Fluon (Fluon).

Figure kpo00001
Figure kpo00001

본 발명의 보호막재료에 포함되어 있는 무기물성분은 Si3N4, AlN, ZnS, SiO2, Si2N2O 등의 유전체물질로서 선천적으로 광투과도는 상당히 양호하다. 따라서 본 발명 보호막재료의 제작시 무기물성분의 조절에 의해서 광디스크의 경우에 커 회전각을 증대시킬 수 있고 결과적으로 출력신호의 SNR을 증가시켜 양호한 성능의 광자기디스크를 제조할 수 있다.The inorganic component contained in the protective film material of the present invention is a dielectric material such as Si 3 N 4 , AlN, ZnS, SiO 2 , Si 2 N 2 O and the like, and has excellent light transmittance inherently. Therefore, when the protective film material of the present invention is manufactured, the rotation angle of the optical disk can be increased by adjusting the inorganic component, and consequently, the SNR of the output signal can be increased to produce a magneto-optical disk with good performance.

제 4 도 및 제 5 도는 본 발명 보호막재료가 적용된 광자기디스크 및 광디스크로의 구성을 보인 단면도로서, 제 4 도 및 제 5 도에서 A'는 합성수지기판, G'는 유전체보호막, J는 본 발명의 보호막재료에 의한 보호층, H는 광기록재료층, I는 상변이기록재료층, F는 WORM형광재료층, K층은 접착층, G"는 유전체보호막을 표시한 것으로, 제 4 도는 구조는 기판(A')과 유전체보호막(G')사이, 제 5 도 구조는 기판(A')과 기록재료층(I) 또는 (F)사이에 보호층(J)이 형성된 것이다. 이러한 구조는 양면 광디스크의 경우로서 상층의 보호막이 서로 겹치게 되어 양면을 이루며 그 구조의 반이 도시되어 있다. 제 5 도에서는 상변이기록재료층(I)대신에 광기록재료층(F)를 형성할 수 있다.4 and 5 are cross-sectional views showing the structure of an optical magnetic disk and an optical disk to which the protective film material of the present invention is applied. In FIGS. 4 and 5, A 'is a synthetic resin substrate, G' is a dielectric protective film, and J is the present invention. Is a protective layer of a protective film material, H denotes an optical recording material layer, I denotes a phase change recording material layer, F denotes a WORM fluorescent material layer, K layer denotes an adhesive layer, and G ″ denotes a dielectric protective film. The structure of FIG. 5 between the substrate A 'and the dielectric protective film G' is a protective layer J formed between the substrate A 'and the recording material layer I or (F). In the case of an optical disc, the upper protective film is overlapped with each other to form both sides, and half of the structure is shown in Fig. 5. The optical recording material layer F can be formed in place of the phase change recording material layer I.

단면 구조일 경우에는 제 6 도와 같은 구조로서 유전체 보호막(G") 직하부에 보호층(J)을 넣고, 이 구조에서 WORM형의 광기록재료층(F)대신에, 광자기기록재료층(H), 또는 상변이기록재료층(I)을 형성할 수 있다.In the case of the cross-sectional structure, the protective layer J is placed directly under the dielectric protective film G ″ as the structure of the sixth degree. In this structure, instead of the WORM type optical recording material layer F, the magneto-optical recording material layer ( H) or the phase change recording material layer I can be formed.

본 발명을 일실싱예로서 적용시 사용한 기판은 5.25인치의 PC기판으로서, 유전체막은 Si3N4로 재료를 결정하여 이를 RF스피터링에 의해 제조하였으며, 이때는 Si타게트를 사용하고, N2는 가스를 블로우잉(blowing)하는 리엑티브스피터링(reactive sputtering)으로 실시하였다. 실시중의 가스는 총압력은 5mTorr, Ar : N2의 분압은 4 : 1로 하여 총두께가 1000Å이 되게 증착하였다.The substrate used when the present invention was applied as an example of silencing was a 5.25 inch PC substrate, and the dielectric film was made of Si 3 N 4 , which was prepared by RF sputtering. In this case, a Si target was used, and N 2 was a gas. Blowing was carried out by reactive sputtering. The gas under implementation was deposited such that the total pressure was 5 mTorr and the partial pressure of Ar: N 2 was 4: 1 so that the total thickness was 1000 kPa.

본 발명에 의한 재료 제조시에는 테프론타게트, AlN타게트를 동시에 사용하여 멀티타게트(multi-target)스퍼터링을 실시하였다. 이것역시 RF스퍼터링을 이용하여 Ar의 총압력을 3mTorr로 결정한 후 총두께가 1500Å이 되도록 증착하였으며 이때 타게트와 기재(substance)사이의 전위차는 약 200V가 되도록 하였다. 이후에 TbFeCo의 조성으로 이루어진 기록층은 DC스퍼터링으로 실시하였는데 Ar의 총압력을 7mTorr로 고정하고 총두께가 1000Å이 되도록 증착하였다. 최상층의 유전체보호막은 상기 Si3N4유전체막 제조와 동일한 과정으로 행하였다.In the preparation of the material according to the present invention, multi-target sputtering was performed using Teflon target and AlN target simultaneously. Again, RF sputtering was used to determine the total pressure of Ar to be 3mTorr, and deposited to a total thickness of 1500Å. At this time, the potential difference between the target and the substrate was about 200V. Subsequently, the recording layer having the composition of TbFeCo was carried out by DC sputtering, and the total pressure of Ar was fixed at 7 mTorr and deposited to have a total thickness of 1000 kPa. Dielectric protective film of the uppermost layer was carried out by the same procedure as the Si 3 N 4 dielectric film production.

본 발명에 의한 보호막재료의 성능을 시험하기 위하여 본 발명에 의한 보호막재료가 적용된 광디스크에 대한 내식성시험, 내구성시험, 커 회전각에 의한 강화시험으로서 온도 75℃, 97%RH(Room Humidity) (이것은 해수로된 것임)에서 200시간 유지후 SNR을 측정하였고, 기록/소거를 반복실시한 후(소거는 광자기디스크에만 국한됨), SNR측정을 실시하였다. 커 회전각 강화시험은 디스크 제작직후 SNR을 측정하였다.In order to test the performance of the protective film material according to the present invention, the corrosion resistance test, the durability test, and the reinforcement test based on the rotation angle of the optical disk to which the protective film material according to the present invention was applied were performed at a temperature of 75 ° C and 97% RH SNR was measured after holding for 200 hours in seawater, and after repeated recording / erasing (erasing was limited to magneto-optical disks), SNR measurement was performed. Kerr rotation angle reinforcement test measured the SNR immediately after the disc production.

제 7 도 및 제 8 도는 본 발명에 의한 디스크와 기존 디스크의 성능을 비교한 시험결과 데이타를 보인 것이며, 이중 제 7 도는 해수분위기에서의 산화/변형시험(SNR측정)을 보인 것이고, 제 8 도는 보호막재료 조성중 유전체 무기물 조성변화에 따른 커 각 측정치를 보인 것이다.7 and 8 show the test result data comparing the performance of the disk and the conventional disk according to the present invention, and FIG. The measured values are shown according to the change of dielectric inorganic composition in the protective film material composition.

이에서 SNR강화 및 부식등에 대한 SNR저하가 없음을 알 수 있다. 또한 테프론성분/무기물성분 R

Figure kpo00002
0.05-0.15에서 가장 커 각이 증대됨을 알 수 있고 R〉0.15이면 고분자 화합물에 의한 투과도 감소로서 또한 R<0.05이면 무기물성분에 의한 굴절율 증가로서 커 각이 작아져서 SNR이 작아지게 된다.From this, it can be seen that there is no SNR reduction for SNR enhancement and corrosion. Teflon / Inorganic Ingredient R
Figure kpo00002
It can be seen that the largest angle is increased at 0.05-0.15. If R> 0.15, the permeability decreases due to the polymer compound, and if R <0.05, the refractive angle is increased due to the inorganic component.

상술한 바와 같은 본 발명에 의한 보호막재료는 유기물 내부에 포함된 불소성분에 의해 수증기, 산소입자가 기록층으로 들어가지 못하여 시간경과 및 환경변화에 의한 기록층의 열화가 없어서 출력신호의 SNR이 저하하지 않는 광디스크를 만들 수 있다. 또한 본 발명에 의한 보호재료는 합성수지기판(예로서 PC, PMMA)과의 접착성이 좋아서 기록시 열팽창, 습도팽창에 의한 디스크의 변형을 방지할 수 있다. 뿐만아니라 무기물의 성분조절에 의해 광출력신호의 SNR을 높일 수 있는 커 회전각의 증대를 이룰 수 있다.In the protective film material according to the present invention as described above, water and oxygen particles cannot enter the recording layer by the fluorine component contained in the organic material, so that the recording layer is not deteriorated due to time-lapse and environmental changes, so that the SNR of the output signal is reduced. You can make an optical disc that doesn't work. In addition, the protective material according to the present invention has good adhesiveness with synthetic resin substrates (for example, PC and PMMA), thereby preventing deformation of the disk due to thermal expansion and humidity expansion during recording. In addition, it is possible to increase the rotation angle of the Kerr which can increase the SNR of the optical output signal by adjusting the composition of the inorganic material.

Claims (4)

불소가 함유된 유기물과 유전체로 이루어진 무기물과의 합성체로 이루어진 것을 특징으로 하는 광디스크의 보호막 재료.A protective film material for an optical disc, comprising a composite of an organic material containing fluorine and an inorganic material made of a dielectric. 제 1 항에 있어서, 상기 유기물은 테프론인 것을 특징으로 하는 광디스크의 보호막 재료.The protective film material of an optical disc according to claim 1, wherein said organic material is Teflon. 제 1 항에 있어서, 상기 무기물은 Si3N4, AlN, ZnS, SiO2, Si2NO2중 하나인 것을 특징으로 하는 광디스크의 보호막 재료.The protective film material of an optical disc according to claim 1, wherein the inorganic material is one of Si 3 N 4 , AlN, ZnS, SiO 2 , and Si 2 NO 2 . 제 1 항에 있어서, 상기 무기물 대 유기물의 비율이 1 : 0.05∼0.15인 것을 특징으로 하는 광디스크의 보호막 재료.The protective film material of an optical disc according to claim 1, wherein the ratio of inorganic to organic is 1: 0.05 to 0.15.
KR1019880014266A 1988-10-31 1988-10-31 Protective film material of optical disk Expired - Fee Related KR930009645B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880014266A KR930009645B1 (en) 1988-10-31 1988-10-31 Protective film material of optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880014266A KR930009645B1 (en) 1988-10-31 1988-10-31 Protective film material of optical disk

Publications (2)

Publication Number Publication Date
KR900006924A KR900006924A (en) 1990-05-09
KR930009645B1 true KR930009645B1 (en) 1993-10-08

Family

ID=19278916

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014266A Expired - Fee Related KR930009645B1 (en) 1988-10-31 1988-10-31 Protective film material of optical disk

Country Status (1)

Country Link
KR (1) KR930009645B1 (en)

Also Published As

Publication number Publication date
KR900006924A (en) 1990-05-09

Similar Documents

Publication Publication Date Title
US5414652A (en) Magneto-optical memory element
CA1209698A (en) Magneto-optic memory device
EP0482606A2 (en) Magneto-optical recording medium
EP0239390A2 (en) Optomagnetic recording medium
KR930009645B1 (en) Protective film material of optical disk
US4954841A (en) Optical recording medium and method of manufacturing the same
US5091267A (en) Magneto-optical recording medium and process for production of the same
US5009762A (en) Magneto-optical recording medium having protective film with increased kerr effect and improved protection characteristic and manufacturing method of the same
JPH03248338A (en) Optical information recording medium
JPH03104038A (en) Method for forming a protective layer for optical discs
EP0239974B1 (en) Magneto-optical recording medium
US6077585A (en) Optical recording medium and method of preparing same
JPS6369048A (en) Optical recording medium
JPH03156753A (en) Optical recording medium
JP2507592B2 (en) Optical recording medium
US20020022153A1 (en) Magneto-optical recording medium and manufacturing method therefor
KR950006415B1 (en) Making method of optical magneto
JPS62289937A (en) Optical disk and its production
CN1239283A (en) Optical recording medium and manufacturing method therefor
JP2729308B2 (en) Magneto-optical recording element and manufacturing method thereof
KR930007029B1 (en) Optical disc with dielectric layer of TbN
JP2918628B2 (en) optical disk
JPH03122845A (en) Optical recording medium
KR930003871B1 (en) Optical disk and the method of manufacturing disk
JPH0370297B2 (en)

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20031008

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20041009

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20041009

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000