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KR930005179A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR930005179A
KR930005179A KR1019910014535A KR910014535A KR930005179A KR 930005179 A KR930005179 A KR 930005179A KR 1019910014535 A KR1019910014535 A KR 1019910014535A KR 910014535 A KR910014535 A KR 910014535A KR 930005179 A KR930005179 A KR 930005179A
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KR
South Korea
Prior art keywords
manufacturing
semiconductor device
film
semiconductor substrate
insulating film
Prior art date
Application number
KR1019910014535A
Other languages
Korean (ko)
Inventor
박선후
이형규
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910014535A priority Critical patent/KR930005179A/en
Publication of KR930005179A publication Critical patent/KR930005179A/en

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Abstract

내용 없음.No content.

Description

반도체장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1D도는 종래 블랭킷 텅스텐 공정순서를 나타낸 단면도,1A to 1D are cross-sectional views showing a conventional blanket tungsten process sequence,

제2A도 내지 제2D도는 본 발명에 의한 블랭킷 텅스텐 공정순서를 나타낸 단면도.2A to 2D are sectional views showing the blanket tungsten process sequence according to the present invention.

Claims (4)

반도체기판상에 형성된 절연막의 소정영역에 콘택홀이 형성되어 있는 반도체장치의 제조방법에 있어서, 상기 콘택홀내부 및 절연막상에 부착층(Adhesion layer)을 형성하는 공정과, 상기 부착층상에 CVD 턴스텐막을 증착하는 공정 및, 상기 CVD 턴스텐막을 에치백하되 에치가스가 반도체기판상에 입사되는 각도를 다단계 변화시켜 경사에치하는 공정이 구비된 것을 특징으로 하는 반도체장치의 제조방법.A method of manufacturing a semiconductor device in which a contact hole is formed in a predetermined region of an insulating film formed on a semiconductor substrate, the method comprising: forming an adhesion layer on the inside of the contact hole and the insulating film; And depositing a sten film, and etching the CVD turnsten film by varying the angle at which the etch gas is incident on the semiconductor substrate by multiple steps. 제1항에 있어서, 상기 절연막은 산화막인 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein said insulating film is an oxide film. 제1항에 있어서, 상기 부착층은 TiN막인 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein said adhesion layer is a TiN film. 제1항에 있어서, 상기 CVD 텅스텐막을 경사에치하는 공정은 상기 반도체기판의 수평각도를 조절하면서 회전시켜 행하는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the step of tilting the CVD tungsten film is performed while rotating while adjusting the horizontal angle of the semiconductor substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910014535A 1991-08-22 1991-08-22 Manufacturing Method of Semiconductor Device KR930005179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910014535A KR930005179A (en) 1991-08-22 1991-08-22 Manufacturing Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014535A KR930005179A (en) 1991-08-22 1991-08-22 Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR930005179A true KR930005179A (en) 1993-03-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014535A KR930005179A (en) 1991-08-22 1991-08-22 Manufacturing Method of Semiconductor Device

Country Status (1)

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KR (1) KR930005179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443935B1 (en) * 2001-07-31 2004-08-09 씨엔이티 주식회사 Manufacturing device for artificial leather

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443935B1 (en) * 2001-07-31 2004-08-09 씨엔이티 주식회사 Manufacturing device for artificial leather

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