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KR930001502A - 박막 트랜지스터와 이것을 제조하기위한 방법 - Google Patents

박막 트랜지스터와 이것을 제조하기위한 방법 Download PDF

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Publication number
KR930001502A
KR930001502A KR1019920010701A KR920010701A KR930001502A KR 930001502 A KR930001502 A KR 930001502A KR 1019920010701 A KR1019920010701 A KR 1019920010701A KR 920010701 A KR920010701 A KR 920010701A KR 930001502 A KR930001502 A KR 930001502A
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South Korea
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semiconductor layer
thin film
channel passivation
film transistor
passivation layer
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KR1019920010701A
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KR100288368B1 (ko
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미타니 야수히로
이꾸보 가쑤마사
다나까 히로히사
모리모토 히로시
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쯔지 하루오
샤프 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

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  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

박막 트랜지스터와 이것을 제조하기 위한 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 박막 트랜지스티의 일부분을 예시한 평면도.
제2도는 제1도의 선B-B를 따라 절취한 단면도.
제3도는 본 발명에 따른 이온 주입법을 예시한 단면도.

Claims (7)

  1. 기판상에 형성된 게이트 진극과; 상기 게이트 전극을 카바하는 절연 게이트막과; 상기 절연 게이트막상에 채널 영역을 형성하는 반도체층과; 상기 반도체층의 중심 근처에 형성된 채널 보호막과; 상기 채널 보호막의 좌, 우 측면에서 각각 상기 반도체층 표면을 따라 좌, 우측 방향으로 연장한 드레인 전극과 소오스 전극으로 구성되며; 상기 채널 보호막은 경사진 좌, 우 측면을 가지며, 상기 반도체층은 상기 채널 보호막의 경사진 측면의 바로 하부에서 불순물로 도우프되어 누설전류를 예방하고 오홈접촉을 제공함을 특징으로 하는 박막 트랜지스터.
  2. 제1항에 있어서, 상기 채널 보호막과 상기 반도체충의 경사진 측면에 의해 형헝된 경사각은10°-50°의 범위에 속함을 특징으로 하는 박막 트랜지스터.
  3. 제1항에 있어서, 상기 채멀 보호막의 두꼐는 1000A-3000A의 범위에 속합을 특징으로 하는 박막 트랜지스터.
  4. 제1항에 있어서, 상기 채널 보호막은 SiNx 또는 SiOz로 형성됨을 특징으로 하는 박막 트랜지스터.
  5. 제1항에 있어서, 상기 박막 트랜지스더는 액정 디스풀례이 장치에 적용됨을 특징으로 하는 박막 트랜지스터.
  6. 기판상에 게이트 진극과, 상기 게이트 전극을 카바하는 절연 게이트막과, 채딜 영역을 형성되도륵 상기 절연게이트막에 위치하는 반도체층과, 상기 반도체층의 중심 근처에 위치하며 경사진 좌, 우 측면들을 구성하는 원추형태의 채널 보호막을 형성하는 단계와; 오홈 접촉을 제공하기 위하여 불순물의 이온 주입에 이해 경사진 측면의 바로 하부에 있는 반도체층과 노출된 반도체층에 이온 도핑된 영역을 형성하는 단계와; 상기 채널 보호막의 좌, 우측면에서 노출된 반도체층을 따라 좌, 우측 방향으로 연장하는 드레인 전극과 소오스 전극을 형성하는 단계로 구성됨을 특징으로 하는 박막 트랜지스터를 제조하는 방법.
  7. 제6항에 있어서, 불순물의 이온주입의 가속 전압은 1kev-100kev의 범위에 속함을 특징으로 하는 박막 트렌지스터를 제조하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920010701A 1991-06-17 1992-06-17 박막트랜지스터와이것을제조하기위한방법 KR100288368B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3144914A JP2634505B2 (ja) 1991-06-17 1991-06-17 薄膜トランジスタ及びその製造方法
JP91-144914 1991-06-17

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KR930001502A true KR930001502A (ko) 1993-01-16
KR100288368B1 KR100288368B1 (ko) 2001-10-24

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KR1019920010701A KR100288368B1 (ko) 1991-06-17 1992-06-17 박막트랜지스터와이것을제조하기위한방법

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EP (1) EP0519692A3 (ko)
JP (1) JP2634505B2 (ko)
KR (1) KR100288368B1 (ko)
TW (1) TW222715B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135475A (ja) 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI613822B (zh) 2011-09-29 2018-02-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP6076626B2 (ja) * 2012-06-14 2017-02-08 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP2014038911A (ja) * 2012-08-13 2014-02-27 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394182A (en) * 1981-10-14 1983-07-19 Rockwell International Corporation Microelectronic shadow masking process for reducing punchthrough

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Publication number Publication date
EP0519692A3 (en) 1993-07-21
TW222715B (ko) 1994-04-21
JP2634505B2 (ja) 1997-07-30
JPH04369229A (ja) 1992-12-22
KR100288368B1 (ko) 2001-10-24
EP0519692A2 (en) 1992-12-23

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