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KR920004310A - 질화알루미늄분말 및 소결체 및 그 제조법 - Google Patents

질화알루미늄분말 및 소결체 및 그 제조법 Download PDF

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KR920004310A
KR920004310A KR1019910004873A KR910004873A KR920004310A KR 920004310 A KR920004310 A KR 920004310A KR 1019910004873 A KR1019910004873 A KR 1019910004873A KR 910004873 A KR910004873 A KR 910004873A KR 920004310 A KR920004310 A KR 920004310A
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weight
aluminum nitride
metal
compounds
sintered body
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KR1019910004873A
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KR940000730B1 (ko
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아끼라 야마가와
고우헤이 시모다
마사야 미야께
고이찌 소게베
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나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C01B21/0726—Preparation by carboreductive nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

내용 없음

Description

질화알루미늄분말 및 소결체 및 그 제조법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. (ⅰ)주성분으로서 질화알루미늄과, (ⅱ) Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및/또는 하나이상의 이들 화합물을 AN중량에 대하여 0.1~3.0중량%(금속환산으로)함유하는 질화알루미늄분말.
  2. 제1항에 있어서, 상기 질화알루미늄 분말은 AN중량에 대하여 0.5~2.5중량%범위로 산소를 함유하고 비표면적은, 2.0~5.0m2/g인것을 특징으로 하는 질화알루미늄분말.
  3. A 2O3분말과 탄소분말을 1 : 0.2~1 : 2의 중량비를 혼합하고; 얻어진 혼합물을 Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및/또는 이들의 하나이상의 화합물이 AN중량에 대하여 0.1~6.0중량%의 양으로 존재하고, 질소가스를 함유하는 비산화성분위기하 1400~1900℃에서 소성하는 공정으로 이루어지는 질화알루미늄분말의 제조방법.
  4. (ⅰ)주성분으로서 질화알루미늄과, (ⅱ) Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및 또는 하나이상의 이들 화합물을 AN중량에 대하여 0.01~5.0중량%로 함유하는 열전도율이 130W/mㆍk이상, 굴곡강가 30kg/mm2이상인 것을 특징으로 하는 착색된 질화알루미늄소결체.
  5. 제4항에 있어서, 상기 소결체는 주기율표의 Ⅱa 및 Ⅲa족 원소에서 선택된 적어도 하나의 원소 및 이들 화합물을 AN중량에 대하여 0.01~5.0중량%(금속환산)로 함유하는 것을 특징으로 하는 질화알루미늄소결체.
  6. 탄소 또는 가열후 탄소를 제공할수있는 탄소함유화합물을 AN중량에 대하여 0.01~1.0중량%로 (탄소환산으로), (ⅰ)주성분으로서 질화알루미늄과 (ⅱ) Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및/또는 이들의 하나이상의 화합물을 AN의 중량에 대해 0.1~3.0중량%(금속환산으로)로 함유하는 질화알루미늄분말에 첨가하고; 얻어진 최종분말혼합물을 성형하고; 성형된 혼합물을 질소가스를 함유하는 비산화분위기에서 소성하는 것으로 이루어진 착색된 소결체의 제조방법.
  7. 제6항에 있어서, 주기율표의 Ⅱa 및 Ⅲa족에서 선택된 적어도 하나의 원소 및 이들의 화합물을 AN의 중량에 대하여 0.01~5.0중량%(금속환산)의 양으로 상기 성형공정전에 상기 질화알루미늄분말에 첨가하는것을 특징으로하는 착색된 소결체의 제조방법.
  8. 질화알미늄의 소결체와 도전성페이스트를 사용하여 상기 소결체상에 형성된 인쇄회로로 이루어지며, 상기 질화알루미늄소결체는 (ⅰ) 주성분으로서 질활알루미늄과 (ⅱ)Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및/또는 이들 화합물을 AN의 중량에 대하여 0.01~5.0중량%(금속환산으로)로 함유하며, 130Wmㆍk이상의 열전도율과 30kg/mm2이상의 굴곡강도를 지니는 것을 특징으로하는 회로판.
  9. 제8항에 있어서, 상기 소결체는 주기율표의 Ⅱa 및 Ⅲa족에서 선택된 적어도 하나의 원소와 이들의 화합물을 AN의 중량에 대하여 0.01~5.0중량%(금속환산으로)함유하는 것을 특징으로하는 회로판.
  10. 착색된 질화알루미늄소결체기판, 반도체소자 및 기판을 에워싸는 리이드 프레임으로 이루어지며, 상기 질화알루미늄소결체는 (ⅰ)주성분으로 질화알루미늄과 (ⅱ) Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W,Mn,Fe,Co,Ni,Nd 및 Ho로 이루어지는 군에서 선택된 적어도 하나의 금속원소 및/또는 이들의 하나이상의 화합물을 AN의 중량에 대하여 0.1~3.0중량%(금속환산) 함유하고 130W/mㆍk이상의 열전도율과 30kg/mm2이상의 굴곡강도를 지니는 것을 특징으로하는 고열전도성 세라믹 패키지.
  11. 제10항에 있어서, 상기 소결체는 주기율표의 Ⅱa 및 Ⅲa족에서 선택된 적어도 하나의 원소와 이들의 화합물을 AN의 중량에 대하여 0.01~5.0중량%(금속환산)로 함유하는 것을 특징으로하는 고열전도성 세라믹패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910004873A 1990-08-06 1991-03-28 질화알루미늄 소결체 및 그 제조법 KR940000730B1 (ko)

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JP2206768A JPH0492864A (ja) 1990-08-06 1990-08-06 窒化アルミニウム粉末および焼結体およびその製造法
JP90-206768 1990-08-06
JP2-206768 1990-08-06

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KR1019930027728A KR940001710B1 (ko) 1990-08-06 1993-12-15 질화알루미늄 분말 및 그 제조법

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EP (1) EP0472776B1 (ko)
JP (1) JPH0492864A (ko)
KR (2) KR940000730B1 (ko)
CA (1) CA2028244C (ko)
DE (1) DE69020559T2 (ko)

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US5273700A (en) * 1990-10-29 1993-12-28 Sumitomo Electric Industries Ltd. Aluminum nitride sintered body and process for producing the same
CA2058075C (en) * 1990-12-26 1996-07-02 Akira Yamakawa Composite ceramic powder and production process thereof
TW280836B (ko) * 1992-09-21 1996-07-11 Sumitomo Electric Industries
JP2597825B2 (ja) * 1994-10-04 1997-04-09 東洋アルミニウム株式会社 遮光性窒化アルミニウム質粉末、その製造方法およびその焼結体
AU4643696A (en) * 1994-12-23 1996-07-19 Dow Chemical Company, The Aluminum nitride powders having high green density, and process for making same
EP1036779B1 (en) * 1999-03-17 2003-09-17 Asahi Techno Glass Corporation Aluminium nitride sintered product and process for its production
JP5645559B2 (ja) * 2010-09-03 2014-12-24 株式会社トクヤマ 球状窒化アルミニウム粉末
CN107574350B (zh) * 2017-08-25 2019-06-25 福州盛世凌云环保科技有限公司 一种高温烟气通道余热回收用陶瓷及其制造方法
JP7588481B2 (ja) * 2020-08-20 2024-11-22 日鉄ケミカル＆マテリアル株式会社 球状ＡｌＮ粒子およびその製造方法、並びにこれを含有する複合材料

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DE3247985C2 (de) * 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Keramischer Träger
US4877760A (en) * 1985-05-22 1989-10-31 Ngk Spark Plug Co., Ltd. Aluminum nitride sintered body with high thermal conductivity and process for producing same
BR8603285A (pt) * 1986-07-04 1988-03-15 Ngk Brasil Ceram Velas Ignicao Nitreto de aluminio sinterizado de alta condutividade termica
JPS6360167A (ja) * 1986-08-28 1988-03-16 イビデン株式会社 窒化アルミニウム質焼結体の製造方法
JPS63156007A (ja) * 1986-12-19 1988-06-29 Denki Kagaku Kogyo Kk 窒化アルミニウム粉末の製造方法
JPS63162576A (ja) * 1986-12-25 1988-07-06 株式会社住友金属セラミックス 黒色窒化アルミニウム焼結体およびその製造方法
JP2577378B2 (ja) * 1987-03-31 1997-01-29 株式会社東芝 窒化アルミニウム焼結体の製造方法
JPS63277565A (ja) * 1987-05-08 1988-11-15 Toshiba Corp 耐熱高熱伝導性複合材料及びその製造方法
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KR920003226B1 (ko) * 1988-05-16 1992-04-24 스미도모덴기고오교오 가부시기가이샤 질화알루미늄소결체와 그것을 사용한 회로기판 및 반도체패키지
DE3840577A1 (de) * 1988-12-01 1990-06-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Entladungsgefaess fuer eine hochdruckentladungslampe und verfahren zu dessen herstellung

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DE69020559T2 (de) 1996-04-04
CA2028244C (en) 1996-04-16
EP0472776A3 (en) 1992-03-11
DE69020559D1 (de) 1995-08-03
EP0472776B1 (en) 1995-06-28
EP0472776A2 (en) 1992-03-04
KR940000730B1 (ko) 1994-01-28
KR940001710B1 (ko) 1994-03-05
CA2028244A1 (en) 1992-02-07
JPH0492864A (ja) 1992-03-25

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