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KR920001921A - Light source integrated image sensor and manufacturing method - Google Patents

Light source integrated image sensor and manufacturing method Download PDF

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Publication number
KR920001921A
KR920001921A KR1019900016312A KR900016312A KR920001921A KR 920001921 A KR920001921 A KR 920001921A KR 1019900016312 A KR1019900016312 A KR 1019900016312A KR 900016312 A KR900016312 A KR 900016312A KR 920001921 A KR920001921 A KR 920001921A
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KR
South Korea
Prior art keywords
light
receiving element
light emitting
layer
image sensor
Prior art date
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Application number
KR1019900016312A
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Korean (ko)
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KR960001343B1 (en
Inventor
마사오 후나다
노리까즈 야마다
가즈히사 안도
Original Assignee
고바야시 요오다로
후지제록스 가부시끼가이샤
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Publication date
Application filed by 고바야시 요오다로, 후지제록스 가부시끼가이샤 filed Critical 고바야시 요오다로
Publication of KR920001921A publication Critical patent/KR920001921A/en
Application granted granted Critical
Publication of KR960001343B1 publication Critical patent/KR960001343B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors

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  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음.No content.

Description

광원 일체형 이미지 센서 및 그 제조방법Light source integrated image sensor and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 1실시예를 나타내는 단면도.1 is a cross-sectional view showing an embodiment of the present invention.

제2도는 다른 실시예를 나타내는 단면도.2 is a cross-sectional view showing another embodiment.

제3도(a),(b)는 광원 일체형 이미지 센서의 제조공정의 일부를 나타낸 사시도.3 (a) and 3 (b) are perspective views showing part of the manufacturing process of the light source integrated image sensor.

Claims (2)

절연기판위에 형성된 다수의 수광소자와, 투명기판위에 형성된 발광소자를 투과층을 사이에 끼워서 대향되게 배치하고, 상기 발광소자로부터의 광을 상기 투명기판의 발광소자 반대측에 배치한 원고면에 조사시켜 그 반사광이 상기 수광소자에 입사되게 한 광원 일체형 이미지 센서에 있어서, 상기 수광소자위의 투광층의 일부 또는 전부를 제거하여 발광소자측에 임하는 기체층을 개재시킨 것을 특징으로 하는 광원 일체형 이미지 센서.A plurality of light receiving elements formed on the insulating substrate and the light emitting elements formed on the transparent substrate are disposed to face each other with a transmissive layer interposed therebetween, and the light from the light emitting elements is irradiated onto the original surface disposed on the opposite side of the light emitting elements of the transparent substrate. A light source-integrated image sensor in which the reflected light is incident on the light-receiving element, wherein a part or all of the light-transmitting layer on the light-receiving element is removed to interpose a gas layer facing the light-emitting element side. 절연기판위에 수광소자를 형성하는 수광소자 형성공정과, 투명기판위에 투명전극, 유전체층, 발광층, 유전체층, 금속전극을 순차 적층하고 상기 금속전극에 광입사창을 설비하여 EL 발광소자를 형성하는 발광소자 형성공정과, 수광소자가 형성된 절연기판위에 접착제를 도포하여 광입사창의 유전체층측에 기체층을 보지한 그대로, 상기 수광소자와 EL 발광소자의 광입사창이 대향되게 접착하는 접착공정으로 된 구비하는 광원 일체형 이미지 센서의 제조방법.A light receiving element forming process for forming a light receiving element on an insulating substrate, and a light emitting element for forming an EL light emitting element by sequentially laminating a transparent electrode, a dielectric layer, a light emitting layer, a dielectric layer, and a metal electrode on a transparent substrate and providing a light incidence window on the metal electrode. A light source comprising a forming step and an adhesive step of applying the adhesive on the insulating substrate on which the light receiving element is formed to bond the light incident window of the light receiving element and the EL light emitting element oppositely while keeping the gas layer on the dielectric layer side of the light incident window. Method of manufacturing an integrated image sensor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900016312A 1990-06-15 1990-10-15 Light source integrated image sensor and manufacturing method Expired - Fee Related KR960001343B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2155049A JPH0448781A (en) 1990-06-15 1990-06-15 Image sensor integrated with light source and its manufacture
JP2-155049 1990-06-15

Publications (2)

Publication Number Publication Date
KR920001921A true KR920001921A (en) 1992-01-30
KR960001343B1 KR960001343B1 (en) 1996-01-26

Family

ID=15597557

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016312A Expired - Fee Related KR960001343B1 (en) 1990-06-15 1990-10-15 Light source integrated image sensor and manufacturing method

Country Status (2)

Country Link
JP (1) JPH0448781A (en)
KR (1) KR960001343B1 (en)

Also Published As

Publication number Publication date
KR960001343B1 (en) 1996-01-26
JPH0448781A (en) 1992-02-18

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