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KR910020879A - 레이저 용단 퓨즈 - Google Patents

레이저 용단 퓨즈 Download PDF

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Publication number
KR910020879A
KR910020879A KR1019910007349A KR910007349A KR910020879A KR 910020879 A KR910020879 A KR 910020879A KR 1019910007349 A KR1019910007349 A KR 1019910007349A KR 910007349 A KR910007349 A KR 910007349A KR 910020879 A KR910020879 A KR 910020879A
Authority
KR
South Korea
Prior art keywords
laser
wiring layer
heating member
fuse
blow fuse
Prior art date
Application number
KR1019910007349A
Other languages
English (en)
Other versions
KR940001888B1 (ko
Inventor
요시오 우수다
히로아끼 이따바
준뻬이 구마가이
세이지 가끼
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
다께다이 마사다까
도시바 마이크로 일렉트로닉스 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바, 다께다이 마사다까, 도시바 마이크로 일렉트로닉스 가부시끼가이샤 filed Critical 아오이 죠이찌
Publication of KR910020879A publication Critical patent/KR910020879A/ko
Application granted granted Critical
Publication of KR940001888B1 publication Critical patent/KR940001888B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

내용 없음

Description

레이저 용단 퓨즈
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 관한 장치의 평면도.

Claims (4)

  1. 레이저에 의해 용단되는 퓨즈에 있어서, 기체상에 절연되어 형성된 배선층(17)과, 상기 배선층과 기체 사이에 설치된 가열부재(14)를 구비하고, 상기 배선층중, 상기 가열부재 상부에 대응한 개소를 절단 개소로 하는 것을 특징으로 하는 레이저 용단 퓨즈.
  2. 제1항에 있어서, 상기 배선층과 가열부재가 서로 접속되어 있는 것을 특징으로 하는 레이저 용단 퓨즈.
  3. 제1항에 있어서, 상기 배선층의 주성분이 알루미늄인 것을 특징으로 하는 레이저 용단 퓨즈.
  4. 제1항에 있어서, 상기 가열부재의 주성분이 실리콘인 것을 특징으로 하는 레이저 용단 퓨즈.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910007349A 1990-05-08 1991-05-07 레이저 용단 퓨즈 KR940001888B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-116837 1990-05-08
JP2116837A JP2656368B2 (ja) 1990-05-08 1990-05-08 ヒューズの切断方法

Publications (2)

Publication Number Publication Date
KR910020879A true KR910020879A (ko) 1991-12-20
KR940001888B1 KR940001888B1 (ko) 1994-03-10

Family

ID=14696856

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007349A KR940001888B1 (ko) 1990-05-08 1991-05-07 레이저 용단 퓨즈

Country Status (5)

Country Link
US (1) US5321300A (ko)
EP (1) EP0456208B1 (ko)
JP (1) JP2656368B2 (ko)
KR (1) KR940001888B1 (ko)
DE (1) DE69129876T2 (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3256626B2 (ja) * 1994-05-15 2002-02-12 株式会社東芝 半導体装置
US5608257A (en) * 1995-06-07 1997-03-04 International Business Machines Corporation Fuse element for effective laser blow in an integrated circuit device
US5760674A (en) * 1995-11-28 1998-06-02 International Business Machines Corporation Fusible links with improved interconnect structure
JPH09213804A (ja) * 1996-01-29 1997-08-15 Mitsubishi Electric Corp ヒューズ層を有する半導体装置
US5652175A (en) * 1996-07-19 1997-07-29 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing a fuse structure
EP0887858A3 (en) * 1997-06-26 1999-02-03 Siemens Aktiengesellschaft Protection layer for laser blown fuses in semiconductor devices
CN1214549A (zh) * 1997-09-12 1999-04-21 西门子公司 改进的激光熔丝连接及其制造方法
JP3466929B2 (ja) 1998-10-05 2003-11-17 株式会社東芝 半導体装置
US6121074A (en) * 1998-11-05 2000-09-19 Siemens Aktiengesellschaft Fuse layout for improved fuse blow process window
JP2000208635A (ja) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp 半導体装置
JP4190084B2 (ja) * 1999-04-22 2008-12-03 東芝マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US6225652B1 (en) * 1999-08-02 2001-05-01 Clear Logic, Inc. Vertical laser fuse structure allowing increased packing density
JP2001244338A (ja) * 2000-02-25 2001-09-07 Toshiba Corp 半導体集積回路装置、半導体集積回路実装基板装置および半導体集積回路装置の入力保護機能解除方法
US6420216B1 (en) * 2000-03-14 2002-07-16 International Business Machines Corporation Fuse processing using dielectric planarization pillars
DE10026926C2 (de) * 2000-05-30 2002-06-20 Infineon Technologies Ag Halbleiteranordnung mit optischer Fuse
US6566730B1 (en) * 2000-11-27 2003-05-20 Lsi Logic Corporation Laser-breakable fuse link with alignment and break point promotion structures
US6873027B2 (en) 2001-10-26 2005-03-29 International Business Machines Corporation Encapsulated energy-dissipative fuse for integrated circuits and method of making the same
TW510019B (en) * 2001-11-19 2002-11-11 Nanya Technology Corp Fuse structure
US6737345B1 (en) * 2002-09-10 2004-05-18 Taiwan Semiconductor Manufacturing Company Scheme to define laser fuse in dual damascene CU process
KR100714483B1 (ko) * 2005-07-18 2007-05-04 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
KR101043841B1 (ko) * 2008-10-14 2011-06-22 주식회사 하이닉스반도체 반도체 메모리 장치의 퓨즈
JP5720388B2 (ja) * 2011-04-12 2015-05-20 ミツミ電機株式会社 操作入力装置
CN105830209B (zh) * 2014-11-27 2020-12-22 瑞萨电子株式会社 半导体器件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584819B2 (ja) * 1975-08-28 1983-01-27 株式会社東芝 ハンドウタイソウチ
JPS58170A (ja) * 1981-06-24 1983-01-05 Mitsubishi Electric Corp 半導体装置
JPS5948543B2 (ja) * 1981-10-13 1984-11-27 株式会社東芝 半導体装置
JPS6151966A (ja) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置
JPS61230336A (ja) * 1985-04-05 1986-10-14 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPS62162344A (ja) * 1986-01-10 1987-07-18 Sanyo Electric Co Ltd 半導体装置
JPS633432A (ja) * 1986-06-24 1988-01-08 Nec Corp 半導体装置
US4935801A (en) * 1987-01-27 1990-06-19 Inmos Corporation Metallic fuse with optically absorptive layer
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer

Also Published As

Publication number Publication date
JPH0414245A (ja) 1992-01-20
US5321300A (en) 1994-06-14
KR940001888B1 (ko) 1994-03-10
DE69129876T2 (de) 1999-01-14
EP0456208A1 (en) 1991-11-13
JP2656368B2 (ja) 1997-09-24
EP0456208B1 (en) 1998-07-29
DE69129876D1 (de) 1998-09-03

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