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KR910006994A - 센스 앰프회로 - Google Patents

센스 앰프회로 Download PDF

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Publication number
KR910006994A
KR910006994A KR1019900015172A KR900015172A KR910006994A KR 910006994 A KR910006994 A KR 910006994A KR 1019900015172 A KR1019900015172 A KR 1019900015172A KR 900015172 A KR900015172 A KR 900015172A KR 910006994 A KR910006994 A KR 910006994A
Authority
KR
South Korea
Prior art keywords
sense amplifier
amplifier circuit
bit line
potential
mos transistor
Prior art date
Application number
KR1019900015172A
Other languages
English (en)
Inventor
겐지 마츠오
야스카즈 노이케
가즈히코 가사이
요시히로 가토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR910006994A publication Critical patent/KR910006994A/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)

Abstract

내용 없음

Description

센스 앰프회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 센스앰프회로의 1실시예를 나타낸 회로도.
제2도 및 제3도는 각각 본 발명의 다른 실시예를 나타낸 회로도.

Claims (4)

  1. 반도체메모리에서의 독출억세스개시전에 센스앰프회로(SA)의 동작이 나쁜 경로로 되는 경우의 데이터출력 상태로 되도록 출력전위가 설정되는 것을 특징으로 하는 센스앰프회로.
  2. 제1항에 있어서, 상기 센스앰프회로(SA)의 출력노드(1)와 소정전위간에 접속된 비트선프리챠지신호(PR)에 의해 게이트제어되는 비트선전위입력용 MOS트랜지스터(N3)를 구비한 것을 특징으로 하는 센스앰프회로.
  3. 제1항 또는 제2항에 있어서, 상기 비트선전위입력용 MOS트랜지스터가 N챈널형이고, 독출억세스개시전에 출력전위가 저레벨로 설정되는 것을 특징으로 하는 센스앰프회로.
  4. 제1항 또는 제2항에 있어서, 상기 비트선전위입력용 MOS트랜지스터가 P챈널형이고, 독출억세스개시전에 출력전위가 고레벨로 설정되는 것을 특징으로 하는 센스앰프회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015172A 1989-09-28 1990-09-25 센스 앰프회로 KR910006994A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1253569A JPH03116493A (ja) 1989-09-28 1989-09-28 センスアンプ回路
JP01-253569 1989-09-28

Publications (1)

Publication Number Publication Date
KR910006994A true KR910006994A (ko) 1991-04-30

Family

ID=17253197

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019900015172A KR910006994A (ko) 1989-09-28 1990-09-25 센스 앰프회로
KR2019950012711U KR960009909Y1 (ko) 1989-09-28 1995-06-05 센스앰프회로

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR2019950012711U KR960009909Y1 (ko) 1989-09-28 1995-06-05 센스앰프회로

Country Status (5)

Country Link
US (1) US5305272A (ko)
EP (1) EP0420189B1 (ko)
JP (1) JPH03116493A (ko)
KR (2) KR910006994A (ko)
DE (1) DE69024733T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
US5608681A (en) * 1996-01-22 1997-03-04 Lsi Logic Corporation Fast memory sense system
EP0827152B1 (en) * 1996-09-02 2003-03-26 Infineon Technologies AG Current-mode sense amplifier
US6032274A (en) * 1997-06-20 2000-02-29 Micron Technology, Inc. Method and apparatus for compressed data testing of more than one memory array
US5935263A (en) * 1997-07-01 1999-08-10 Micron Technology, Inc. Method and apparatus for memory array compressed data testing
US5959921A (en) * 1997-07-24 1999-09-28 Micron Technology, Inc. Sense amplifier for complement or no-complementary data signals
US5809038A (en) * 1997-07-24 1998-09-15 Micron Technology, Inc. Method and apparatus for reading compressed test data from memory devices
US6295618B1 (en) 1998-08-25 2001-09-25 Micron Technology, Inc. Method and apparatus for data compression in memory devices
JP2001028429A (ja) * 1999-07-15 2001-01-30 Nec Corp 不揮発性半導体記憶装置およびその製造方法
FR2823362B1 (fr) 2001-04-06 2005-03-11 St Microelectronics Sa Dispositif de lecture de cellules memoire
KR100528789B1 (ko) * 2003-08-01 2005-11-15 주식회사 하이닉스반도체 셀프 리프래쉬 모드 진입을 위한 클럭 인에이블 버퍼

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239994A (en) * 1978-08-07 1980-12-16 Rca Corporation Asymmetrically precharged sense amplifier
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JPS5785255A (en) * 1980-11-17 1982-05-27 Nec Corp Memory storage for integrated circuit
US4412143A (en) * 1981-03-26 1983-10-25 Ncr Corporation MOS Sense amplifier
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS59119589A (ja) * 1982-12-27 1984-07-10 Toshiba Corp 差動増幅器
JPS60226092A (ja) * 1984-04-25 1985-11-11 Nec Corp センスアンプ

Also Published As

Publication number Publication date
DE69024733D1 (de) 1996-02-22
EP0420189A2 (en) 1991-04-03
US5305272A (en) 1994-04-19
JPH0531238B2 (ko) 1993-05-12
EP0420189A3 (en) 1992-05-27
JPH03116493A (ja) 1991-05-17
DE69024733T2 (de) 1996-06-27
EP0420189B1 (en) 1996-01-10
KR960009909Y1 (ko) 1996-11-18

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