KR910000078B1 - 분자선 에피택시 장치 - Google Patents
분자선 에피택시 장치 Download PDFInfo
- Publication number
- KR910000078B1 KR910000078B1 KR1019840003469A KR840003469A KR910000078B1 KR 910000078 B1 KR910000078 B1 KR 910000078B1 KR 1019840003469 A KR1019840003469 A KR 1019840003469A KR 840003469 A KR840003469 A KR 840003469A KR 910000078 B1 KR910000078 B1 KR 910000078B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- chamber
- susceptor
- molecular beam
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001451 molecular beam epitaxy Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 96
- 238000000034 method Methods 0.000 claims description 17
- 230000005484 gravity Effects 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 description 29
- 230000033001 locomotion Effects 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 9
- 239000000428 dust Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/005—Transport systems
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (2)
- 에피택셜 성장을 행하는 기판면을 중력방향으로 향하게 하여 기판을 장치내로 도입하는 수단, 초고진공중에서 상기 기판면에 분자선에 의한 에피택셜 성장시키는데 필요한 공정을 행하는 처리실, 본 장치내에 도입된 상기 기판을 그 기판면을 상기 중력방향으로 유지한 상태에서 상기 처리실로 반송시키는 수단, 본 장치내에 도입된 상기 기판을 그 기판면을 상기 중력방향으로 유지한 상태에서 상기 반송수단에 이송하며 상기 반송수단과 상기 처리실 사이에서 이송하는 수단을 포함하고, 분자선 에피택시법과 수직방향으로 상기 처리실내에 반송된 기판의 표면을 재배치하고 분자선의 조사 위치를 향해서 기판표면을 세트하기 위한 수단에 의해 상기 기판면에 박막결정을 성장시키도록한 분자선 에피택시장치.
- 특허청구의 범위 제1항에 있어서, 상기 도입수단은 대기중에서 상기 장치내로 선택적이고 동시에 다수의 기판을 도입하도록 구성되고, 상기 이송수단과 상기 반송수단은 연속적으로 상기 도입수단에서 상기 처리실로 하나씩 상기 기판을 이송 및 반송하는 분자선 에피택시장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58112721A JPS605509A (ja) | 1983-06-24 | 1983-06-24 | 分子線エピタキシ装置 |
JP83-112721 | 1986-06-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850000904A KR850000904A (ko) | 1985-03-09 |
KR910000078B1 true KR910000078B1 (ko) | 1991-01-19 |
Family
ID=14593859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840003469A Expired KR910000078B1 (ko) | 1983-06-24 | 1984-06-20 | 분자선 에피택시 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4542712A (ko) |
EP (1) | EP0132538B1 (ko) |
JP (1) | JPS605509A (ko) |
KR (1) | KR910000078B1 (ko) |
CA (1) | CA1207470A (ko) |
DE (1) | DE3462375D1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10441674B2 (en) | 2010-04-07 | 2019-10-15 | Baxter International Inc. | Hemostatic sponge |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8332394D0 (en) * | 1983-12-05 | 1984-01-11 | Pilkington Brothers Plc | Coating apparatus |
US4619573A (en) * | 1984-03-09 | 1986-10-28 | Tegal Corporation | Article transport apparatus |
US4734338A (en) * | 1984-07-31 | 1988-03-29 | Canon Kabushiki Kaisha | Electroluminescent device |
US4672265A (en) * | 1984-07-31 | 1987-06-09 | Canon Kabushiki Kaisha | Electroluminescent device |
US4775820A (en) * | 1984-07-31 | 1988-10-04 | Canon Kabushiki Kaisha | Multilayer electroluminescent device |
US4741976A (en) * | 1984-07-31 | 1988-05-03 | Canon Kabushiki Kaisha | Electroluminescent device |
JPH0787084B2 (ja) * | 1985-02-06 | 1995-09-20 | 株式会社日立製作所 | 真空装置の試料交換機構 |
JPS61280610A (ja) * | 1985-06-06 | 1986-12-11 | Toshiba Corp | 分子線エピタキシヤル成長装置 |
JPS6235513A (ja) * | 1985-08-09 | 1987-02-16 | Hitachi Ltd | 分子線エピタキシ装置 |
US4733632A (en) * | 1985-09-25 | 1988-03-29 | Tokyo Electron Limited | Wafer feeding apparatus |
US4682508A (en) * | 1986-03-06 | 1987-07-28 | Finnigan Corporation | Inlet valve for probe apparatus |
US5102495A (en) * | 1986-04-18 | 1992-04-07 | General Signal Corporation | Method providing multiple-processing of substrates |
US5013385A (en) * | 1986-04-18 | 1991-05-07 | General Signal Corporation | Quad processor |
US5308431A (en) * | 1986-04-18 | 1994-05-03 | General Signal Corporation | System providing multiple processing of substrates |
US6103055A (en) * | 1986-04-18 | 2000-08-15 | Applied Materials, Inc. | System for processing substrates |
CA1331163C (en) * | 1986-04-18 | 1994-08-02 | Applied Materials, Inc. | Multiple-processing and contamination-free plasma etching system |
US4722654A (en) * | 1986-06-30 | 1988-02-02 | Rca Corporation | Article transfer system |
US4950358A (en) * | 1986-07-07 | 1990-08-21 | Santa Barbara Research Center | Vapor phase epitaxy of semiconductor material in a quasi-open system |
DE3786237T2 (de) * | 1986-12-10 | 1993-09-23 | Fuji Seiki Kk | Vorrichtung fuer vakuumverdampfung. |
US4776745A (en) * | 1987-01-27 | 1988-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Substrate handling system |
JPH0671041B2 (ja) * | 1987-10-16 | 1994-09-07 | セイコー精機株式会社 | 真空室内搬送装置 |
JP2502661B2 (ja) * | 1988-03-04 | 1996-05-29 | 松下電器産業株式会社 | 気相成長装置 |
US4984954A (en) * | 1988-04-25 | 1991-01-15 | Warenback Douglas H | Spatula for wafer transport |
US4867631A (en) * | 1988-04-25 | 1989-09-19 | Tegal Corporation | Spatula for wafer transport |
US4951603A (en) * | 1988-09-12 | 1990-08-28 | Daidousanso Co., Ltd. | Apparatus for producing semiconductors |
US5076205A (en) * | 1989-01-06 | 1991-12-31 | General Signal Corporation | Modular vapor processor system |
JP2704309B2 (ja) * | 1990-06-12 | 1998-01-26 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板の熱処理方法 |
WO1992005922A1 (en) * | 1990-09-27 | 1992-04-16 | Genmark Automation | Vacuum elevator |
US5228940A (en) * | 1990-10-03 | 1993-07-20 | Mitsubishi Denki Kabushiki Kaisha | Fine pattern forming apparatus |
JP2501948B2 (ja) * | 1990-10-26 | 1996-05-29 | 三菱電機株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US5246532A (en) * | 1990-10-26 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
JPH0639697B2 (ja) * | 1990-11-30 | 1994-05-25 | 株式会社芝浦製作所 | 基板のローディング装置 |
JP3024329B2 (ja) * | 1991-12-04 | 2000-03-21 | 村田機械株式会社 | 紡糸巻取機 |
US5248371A (en) * | 1992-08-13 | 1993-09-28 | General Signal Corporation | Hollow-anode glow discharge apparatus |
CH686445A5 (de) * | 1992-10-06 | 1996-03-29 | Balzers Hochvakuum | Kammer und Kammerkombination fuer eine Vakuumanlage und Verfahren zum Durchreichen mindestens eines Werkstueckes. |
US5417537A (en) * | 1993-05-07 | 1995-05-23 | Miller; Kenneth C. | Wafer transport device |
US5789890A (en) * | 1996-03-22 | 1998-08-04 | Genmark Automation | Robot having multiple degrees of freedom |
US6121743A (en) * | 1996-03-22 | 2000-09-19 | Genmark Automation, Inc. | Dual robotic arm end effectors having independent yaw motion |
US6217663B1 (en) * | 1996-06-21 | 2001-04-17 | Kokusai Electric Co., Ltd. | Substrate processing apparatus and substrate processing method |
US6245152B1 (en) * | 1996-07-05 | 2001-06-12 | Super Silicon Crystal Research Institute Corp. | Method and apparatus for producing epitaxial wafer |
US6489741B1 (en) | 1998-08-25 | 2002-12-03 | Genmark Automation, Inc. | Robot motion compensation system |
DE19949005A1 (de) * | 1999-10-11 | 2001-05-10 | Leica Microsystems | Einrichtung und Verfahren zum Einbringen verschiedener transparenter Substrate in ein hochgenaues Messgerät |
US7988398B2 (en) | 2002-07-22 | 2011-08-02 | Brooks Automation, Inc. | Linear substrate transport apparatus |
US7959395B2 (en) | 2002-07-22 | 2011-06-14 | Brooks Automation, Inc. | Substrate processing apparatus |
US8602706B2 (en) * | 2009-08-17 | 2013-12-10 | Brooks Automation, Inc. | Substrate processing apparatus |
US9920418B1 (en) * | 2010-09-27 | 2018-03-20 | James Stabile | Physical vapor deposition apparatus having a tapered chamber |
JP2013062316A (ja) * | 2011-09-12 | 2013-04-04 | Tokyo Electron Ltd | 搬送装置及びプラズマ処理システム |
JP6279227B2 (ja) * | 2013-04-30 | 2018-02-14 | 株式会社 エイブイシー | 材料搬送器具 |
US9994956B2 (en) * | 2014-08-11 | 2018-06-12 | University Of Kansas | Apparatus for in situ deposition of multilayer structures via atomic layer deposition and ultra-high vacuum physical or chemical vapor deposition |
US10593871B2 (en) | 2017-07-10 | 2020-03-17 | University Of Kansas | Atomic layer deposition of ultrathin tunnel barriers |
US11075105B2 (en) * | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
Family Cites Families (7)
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US4030622A (en) * | 1975-05-23 | 1977-06-21 | Pass-Port Systems, Inc. | Wafer transport system |
US4181544A (en) * | 1976-12-30 | 1980-01-01 | Bell Telephone Laboratories, Incorporated | Molecular beam method for processing a plurality of substrates |
US4201152A (en) * | 1978-02-27 | 1980-05-06 | Varian Associates, Inc. | Transfer and temperature monitoring apparatus |
FR2498813A1 (fr) * | 1981-01-27 | 1982-07-30 | Instruments Sa | Installation de traitement de materiaux pour la production de semi-conducteurs |
FR2502643B1 (fr) * | 1981-03-27 | 1986-05-02 | Western Electric Co | Appareil et procede de depot par jet moleculaire sur plusieurs substrats |
US4412771A (en) * | 1981-07-30 | 1983-11-01 | The Perkin-Elmer Corporation | Sample transport system |
US4464342A (en) * | 1982-05-14 | 1984-08-07 | At&T Bell Laboratories | Molecular beam epitaxy apparatus for handling phosphorus |
-
1983
- 1983-06-24 JP JP58112721A patent/JPS605509A/ja active Pending
-
1984
- 1984-05-29 EP EP84106138A patent/EP0132538B1/en not_active Expired
- 1984-05-29 DE DE8484106138T patent/DE3462375D1/de not_active Expired
- 1984-06-06 CA CA000455995A patent/CA1207470A/en not_active Expired
- 1984-06-20 KR KR1019840003469A patent/KR910000078B1/ko not_active Expired
- 1984-06-22 US US06/623,370 patent/US4542712A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10441674B2 (en) | 2010-04-07 | 2019-10-15 | Baxter International Inc. | Hemostatic sponge |
Also Published As
Publication number | Publication date |
---|---|
KR850000904A (ko) | 1985-03-09 |
CA1207470A (en) | 1986-07-08 |
EP0132538B1 (en) | 1987-02-11 |
DE3462375D1 (en) | 1987-03-19 |
JPS605509A (ja) | 1985-01-12 |
EP0132538A1 (en) | 1985-02-13 |
US4542712A (en) | 1985-09-24 |
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Legal Events
Date | Code | Title | Description |
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PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19840620 |
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PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19880825 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19840620 Comment text: Patent Application |
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G160 | Decision to publish patent application | ||
PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19901128 |
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Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19910329 |
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Comment text: Registration of Establishment Patent event date: 19910411 Patent event code: PR07011E01D |
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Payment date: 19910411 End annual number: 3 Start annual number: 1 |
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