KR900006511B1 - 반도체장치를 제조하는 방법 - Google Patents
반도체장치를 제조하는 방법 Download PDFInfo
- Publication number
- KR900006511B1 KR900006511B1 KR1019870009416A KR870009416A KR900006511B1 KR 900006511 B1 KR900006511 B1 KR 900006511B1 KR 1019870009416 A KR1019870009416 A KR 1019870009416A KR 870009416 A KR870009416 A KR 870009416A KR 900006511 B1 KR900006511 B1 KR 900006511B1
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- KR
- South Korea
- Prior art keywords
- barrier metal
- metal layer
- bump
- stopper
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
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Abstract
Description
Claims (9)
- 전극부가 구비되는 반도체기판위에 절연층을 형성하고, 그것의 전표면에 걸쳐 배리어금속층을 형성하며, 상기 전극부를 둘러 싸도록 상기 배리어 금슥층에 홈을 형성하고, 상기 험에 스토퍼를 매입하며, 전극부위에 위치된 배리어 금속층 위에 범프를 형성하고, 그리고 스토퍼가 외측 배리어금속층의 제거동안 내측배리어 금속층의 제거를 방지하도륵 스토퍼 외측의 배리어금속층을 제거하는 단계로 구성되는 것을 특징으로 하는 반도체장치를 제조하는 방법.
- 제1항에 있어서, 상기 절연층은 포스포-실리케이트 유리 또는 이산화실리콘으로 이루어지는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 전극부는 알루미늄으로 이루어지는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 배리어금속층은 각각 티타늄, 구리 및 니켈의 3층으로 구성되는 것을 특징으로하는 방법,
- 제1항에 있어서, 상기 홈은 배리어금속층을 습식에칭함에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 상기 홈내에 금 또는 솔더를 단지 용융시킴에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 홈을 매입하는 동안 도금에 의해 배리어금속층위에 범프층을 형성하고, 그리고 홈 외측에 위치된 배리어금속층을 제거하는 단계에 의해 형성되는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 범프를 형성함에 의해 형성되고 상기 범프의 다리부는 스토퍼로서 작용하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 상기 스토퍼는 도금 프로세스에 의해 형성되는 것을 특징으로 하는 방법.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61203035A JPS6358858A (ja) | 1986-08-28 | 1986-08-28 | 半導体装置の製造方法 |
JP203035 | 1986-08-28 | ||
JP61-200101 | 1986-08-28 | ||
JP200101 | 1986-08-28 | ||
JP61-203035 | 1986-08-28 | ||
JP61200101A JPS6356941A (ja) | 1986-08-28 | 1986-08-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880003409A KR880003409A (ko) | 1988-05-17 |
KR900006511B1 true KR900006511B1 (ko) | 1990-09-03 |
Family
ID=26511969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870009416A Expired - Lifetime KR900006511B1 (ko) | 1986-08-28 | 1987-08-27 | 반도체장치를 제조하는 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4742023A (ko) |
EP (1) | EP0261799B1 (ko) |
KR (1) | KR900006511B1 (ko) |
DE (1) | DE3777047D1 (ko) |
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-
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- 1987-08-19 US US07/086,805 patent/US4742023A/en not_active Expired - Fee Related
- 1987-08-24 DE DE8787307459T patent/DE3777047D1/de not_active Expired - Lifetime
- 1987-08-24 EP EP87307459A patent/EP0261799B1/en not_active Expired - Lifetime
- 1987-08-27 KR KR1019870009416A patent/KR900006511B1/ko not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0261799B1 (en) | 1992-03-04 |
KR880003409A (ko) | 1988-05-17 |
US4742023A (en) | 1988-05-03 |
EP0261799A1 (en) | 1988-03-30 |
DE3777047D1 (de) | 1992-04-09 |
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|
P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |