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KR900004039A - 복합 mos 트랜지스터 및 그의 프리휠 다이오드로의 응용 - Google Patents

복합 mos 트랜지스터 및 그의 프리휠 다이오드로의 응용 Download PDF

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Publication number
KR900004039A
KR900004039A KR1019890012438A KR890012438A KR900004039A KR 900004039 A KR900004039 A KR 900004039A KR 1019890012438 A KR1019890012438 A KR 1019890012438A KR 890012438 A KR890012438 A KR 890012438A KR 900004039 A KR900004039 A KR 900004039A
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KR
South Korea
Prior art keywords
composite
transistor
substrate
main electrode
terminal
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KR1019890012438A
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English (en)
Inventor
나드 브뤼노
Original Assignee
엘리자베드 아삐쯔
에스지에스-톰슨 마이크로일렉트로닉스 에스.에이
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Application filed by 엘리자베드 아삐쯔, 에스지에스-톰슨 마이크로일렉트로닉스 에스.에이 filed Critical 엘리자베드 아삐쯔
Publication of KR900004039A publication Critical patent/KR900004039A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/812—Charge-trapping diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음

Description

복합 MOS 트랜지스터 및 그의 프리휠 다이오드로의 응용
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명의 복합 MOS 트랜지스터의 개략적인 양상을 회전선도로 나타낸 도면.
제7A-7B도는 본 발명의 복합 MOS 트랜지스터를 보인 상세 회로도.
제8도는 본 발명의 복합 MOS 트랜지스터의 개략적인 실시예를 예시한 반도체층의 단면도.
제9도 및 제10도는 서로 등가이고 본 발명의 복합 MOS 트랜지스터에 인가된 극성에 따라 제8도의 단면도에 대한 개략단면도.
제11도 및 제12도는 본 발명의 복합 MOS 트랜지스터를 프리휠 다이오드로 응용 사용하는 것을 예시한 회로도.

Claims (4)

  1. 게이트전극(G1), 제1주전극(A1), 제2주전극(A2) 및 기판영역(60)을 구성하는 제1도전형 기판에 실현된 복합 MOS 트랜지스터가 기판영역에 최저전위를 갖는 제1 및 제2전극중의 한 전극을 연결시키는 수단(51)을 구성하고 있음을 특징으로 하는 복합 MOS 트랜지스터.
  2. 제1항에 있어서, 제1도전형 기판에 실현된 복합 MOS 트랜지스터에서, 상기 복합 MOS 트랜지스터의 제1 및 제2주전극(A1,A2)이 각각 제1및 제2보조 MOS 트랜지스터(52,53)의 제1주단자에 연결되고 이제1 및 제2보조 트랜지스터(52,53)의 제2주단자가 기판에 연결되며, 상기 제1 및 제2보조 트랜지스터(52,53)의 게이트(g2,g3)가 전압비교기(54)의 출력에 의해 추가로 제어되며, 이 전압 비교기(54)의 입력이 상기 복합 트랜지스터(50)의 주전극에 연결되어, 따라서 최저 전위상태에 있는 상기 복합 트랜지스터(50)의 주전극이 자동적으로 기판에 연결되도록 된 것을 특징으로 하는 복합 MOS 트랜지스터.
  3. 제1항에 있어서, 복합 MOS 트랜지스터에서, 상기 주전극이 제1도전형의 우물(60)에 있는 제2도전형(61,62)의 확산부에 해당되고 상기 보조 트랜지스터의 제2주단자(63,66)가 상기 제1도전형의 확산부(65,68)에 연결되어 있으며 고도의 도핑 레벨을 이루는 이들 확산부가 상기 기판(60)에 형성된 것을 특징으로 하는 복합 MOS 트랜지스터.
  4. 모놀리딕형태로 버어티컬 파워 트랜지스터를 구비하는 기판에 실현된 프리휠 다이오드가, 기판의 도전형과 반대방향의 도전형 우물(60)에 있는, 제1주전극(A1)이 일반적으로 외부부하의 제1단자에 연결되는 파워 트랜지스터의 소오스 단자에 연결되고, 제2주전극(A2)이 상기 부하의 제2단자에 연결되도록 제공된 엑세스단자에 연결되고 게이트(G1)가 파워 트랜지스터의 게이트와 관계하여 반대 위상에서 제어되는 제1항의 복합 트랜지스터를 구성함을 특징으로 하는 프리휠 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890012438A 1988-08-31 1989-08-30 복합 mos 트랜지스터 및 그의 프리휠 다이오드로의 응용 KR900004039A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR88/11659 1988-08-31
FR8811659A FR2636778B1 (fr) 1988-08-31 1988-08-31 Transistor mos composite et application a une diode roue libre

Publications (1)

Publication Number Publication Date
KR900004039A true KR900004039A (ko) 1990-03-27

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Country Status (6)

Country Link
US (1) US4994886A (ko)
EP (1) EP0357528B1 (ko)
JP (1) JPH02126669A (ko)
KR (1) KR900004039A (ko)
DE (1) DE68905269T2 (ko)
FR (1) FR2636778B1 (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520125B1 (en) * 1991-06-27 1997-08-20 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Switching circuit for connecting a first circuit node to a second or to a third circuit node according to the latter's potential, for controlling the potential of an insulation region of an integrated circuit according to the substrate's potential
US5536977A (en) * 1993-11-30 1996-07-16 Siliconix Incorporated Bidirectional current blocking MOSFET for battery disconnect switching
EP0660520B1 (en) * 1993-11-30 2004-05-26 Siliconix Incorporated Multiple source power supply and method of selecting a power source from among multiple sources of power
US5510747A (en) * 1993-11-30 1996-04-23 Siliconix Incorporated Gate drive technique for a bidirectional blocking lateral MOSFET
US5373434A (en) * 1994-03-21 1994-12-13 International Business Machines Corporation Pulse width modulated power supply
US5594381A (en) * 1994-04-29 1997-01-14 Maxim Integrated Products Reverse current prevention method and apparatus and reverse current guarded low dropout circuits
US5689209A (en) 1994-12-30 1997-11-18 Siliconix Incorporated Low-side bidirectional battery disconnect switch
DE19512911C1 (de) * 1995-04-06 1996-05-09 Bosch Gmbh Robert Schaltungsanordnung zum Schalten einer elektrischen Last
FR2738424B1 (fr) * 1995-09-05 1997-11-21 Sgs Thomson Microelectronics Interrupteur analogique basse tension
EP0887932A1 (en) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Control of the body voltage of a high voltage LDMOS
US6421262B1 (en) 2000-02-08 2002-07-16 Vlt Corporation Active rectifier
WO2001080410A1 (de) 2000-04-13 2001-10-25 Infineon Technologies Ag Spannungswandler
US7667849B2 (en) * 2003-09-30 2010-02-23 British Telecommunications Public Limited Company Optical sensor with interferometer for sensing external physical disturbance of optical communications link
GB0322859D0 (en) * 2003-09-30 2003-10-29 British Telecomm Communication
GB0407386D0 (en) * 2004-03-31 2004-05-05 British Telecomm Monitoring a communications link
GB0421747D0 (en) * 2004-09-30 2004-11-03 British Telecomm Distributed backscattering
US7848645B2 (en) * 2004-09-30 2010-12-07 British Telecommunications Public Limited Company Identifying or locating waveguides
GB0427733D0 (en) * 2004-12-17 2005-01-19 British Telecomm Optical system
EP1825613B1 (en) 2004-12-17 2011-02-16 BRITISH TELECOMMUNICATIONS public limited company Assessing a network
GB0504579D0 (en) * 2005-03-04 2005-04-13 British Telecomm Communications system
ATE434774T1 (de) * 2005-03-04 2009-07-15 British Telecomm Akustooptische modulatoranordnung
US7385433B2 (en) 2005-03-18 2008-06-10 Stmicroelectronics, Inc. Analog switch with reduced parasitic bipolar transistor injection
EP1708388A1 (en) 2005-03-31 2006-10-04 British Telecommunications Public Limited Company Communicating information
US20090054809A1 (en) * 2005-04-08 2009-02-26 Takeharu Morishita Sampling Device for Viscous Sample, Homogenization Method for Sputum and Method of Detecting Microbe
EP1713301A1 (en) * 2005-04-14 2006-10-18 BRITISH TELECOMMUNICATIONS public limited company Method and apparatus for communicating sound over an optical link
EP1729096A1 (en) * 2005-06-02 2006-12-06 BRITISH TELECOMMUNICATIONS public limited company Method and apparatus for determining the position of a disturbance in an optical fibre
EP1989797B1 (en) * 2006-02-24 2011-04-13 BRITISH TELECOMMUNICATIONS public limited company Sensing a disturbance
WO2007096579A1 (en) * 2006-02-24 2007-08-30 British Telecommunications Public Limited Company Sensing a disturbance
EP1826924A1 (en) * 2006-02-24 2007-08-29 BRITISH TELECOMMUNICATIONS public limited company Sensing a disturbance
WO2007113527A1 (en) * 2006-04-03 2007-10-11 British Telecommunications Public Limited Company Evaluating the position of a disturbance
JP4924032B2 (ja) * 2006-12-28 2012-04-25 富士通セミコンダクター株式会社 ラッチ回路及びそれを備えたフリップフロップ回路並びに論理回路
JP4939335B2 (ja) * 2007-08-07 2012-05-23 ルネサスエレクトロニクス株式会社 双方向スイッチ回路
US8415747B2 (en) * 2010-12-28 2013-04-09 Infineon Technologies Austria Ag Semiconductor device including diode
US8947156B2 (en) * 2012-11-09 2015-02-03 Fairchild Semiconductor Corporation High-voltage bulk driver using bypass circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0107137B1 (en) * 1982-10-12 1986-10-01 Nissan Motor Co., Ltd. A semiconductor switching circuit with an overcurrent protection

Also Published As

Publication number Publication date
EP0357528A1 (fr) 1990-03-07
US4994886A (en) 1991-02-19
EP0357528B1 (fr) 1993-03-10
FR2636778B1 (fr) 1990-12-14
JPH02126669A (ja) 1990-05-15
DE68905269T2 (de) 1993-10-21
DE68905269D1 (de) 1993-04-15
FR2636778A1 (fr) 1990-03-23

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19890830

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