KR900003966A - 반응처리장치 및 방법 - Google Patents
반응처리장치 및 방법 Download PDFInfo
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- KR900003966A KR900003966A KR1019890011478A KR890011478A KR900003966A KR 900003966 A KR900003966 A KR 900003966A KR 1019890011478 A KR1019890011478 A KR 1019890011478A KR 890011478 A KR890011478 A KR 890011478A KR 900003966 A KR900003966 A KR 900003966A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/912—Differential etching apparatus having a vertical tube reactor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (14)
- 반응용기 내로 반응가스를 흘려서 피처리체의 반응처리를 행하는 처리장치로서, 상기 반응용기 내에 붙이고 떼기가 가능하게 배치된 적어도 제1 및 제2의 영역으로 구획하는 구획 수단과, 상기 구획 수단에 의한 제1의 영역에 피처리체를 수용하는 반응부와, 상기 반응용기 내에서 상기 반응부의 내부와, 상기 구획수단에 의한 제2의 영역의 반응부 외부와를 연이어 통하게 하는 수단과, 상기 반응부내로 반응가스를 공급하는 반응가스 공급 수단과, 상기 반응용기 내에서 또한 상기 제2의 영역 외부로 세정 가스를 공급하는 세정가스 공급 수단과, 상기 제2의 영역을 유통로로 하는 가스를 배출 하도록 상기 반응용기에 접속된 배기 수단과, 를 특징으로 하는 반응 처리 장치.
- 제1항에 있어서, 세정 가스가 반응처리중에 생성되는 화합물을 분해하는 가승인 것인 반응처리 장치.
- 제1항에 있어서, 세정 가스가 불활성 가스인 반응처리 장치.
- 제1항에 있어서, 반응용기가 원통형상의 반응관(16)으로 이루어진 반응처리 장치.
- 제1항에 있어서, 구획 수단은, 끝단부가 덮여진 내부관(18)으로 이루어지며, 상기 내부관(18)이 반응관(16)내에 동입축을 중심으로한 원형상으로 배치되는 것인 반응처리 장치.
- 제1항에 있어서, 연이어 통하게 하는 수단이, 상기 내부관(18)에 뚫려진 가는구멍(34),(36)으로 이루어지는 것인 반응처리 장치.
- 제1항에 있어서, 반응관(16)이 수직 상태인 길이 방향의 축을 가지며, 상기 세정 가스 공급 수단이 상기 방응관(16)의 꼭대기부에 접속되고, 상기 배기수단이 상기 반응관(16)의 바닥부에 접속되는 것인 반응처리 장치.
- 제1항에 있어서, 구획 수단이, 끝단부가 개구된 제1내부관(78)으로 이루어지고, 상기 제1내부관(78)이 반응관(76)내에 동일축을 중심으로 한 원형상으로 배치되는 것인 반응처리 장치.
- 제1항에 있어서, 연이어 통하게 하는 수단이, 상기 내부관(78),(80) 끝단부의 개구로 이루어지는것인 반응처리 장치.
- 제8항에 있어서, 반응관(76)과 상기 제1내부관(78)과의 사이에, 끝단부가 개구된 제2내부관(80)이 동일축을 중심으로한 원형상으로 배열 설치되는 것인 반응처리 장치.
- 제1항에 있어서, 세정 가스 공급 수단이, 상기 제1내부관(78)과 제2내부관(80)과의 사이의 간격에 접속되고, 상기 배기수단이 상기 제2내부관(80)과 반응관(76)과의 사이의 간격에 접속 되는 것인 반응처리 장치.
- 반응 용기내에 적어도 제1 및 제2의 영역을 구획하여 형성하고, 제1의 영역에 피러치체를 수납 하도록한 처리방법에 있어서, 반응영역으로 반응가스를 공급하는 공정과, 피처리체를 처리한 반응가스를 제2의 영역으로 배출하는 공정고, 제2의 영역의 적어도 상기 반응가스의 유통로에 적어도 반응가스가 흐르고 있는 기간동안 세정 가스를 공급하는 공정과, 상기 세정가스 및 반응가스를 배출하는 공정에 의하여 피처리체의 반응처리를 행하는 것을 특징으로 하는 반응처리 방법.
- 제12항에 있어서, 반응 처리가 CVD 처리인 것을 특징으로 하는 반응처리 방법.
- 제12항에 있어서, 반응처리가 산화처리 인것을 특징으로 하는 반응처리 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP204447 | 1988-08-17 | ||
JP20444788 | 1988-08-17 |
Publications (2)
Publication Number | Publication Date |
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KR900003966A true KR900003966A (ko) | 1990-03-27 |
KR0155151B1 KR0155151B1 (ko) | 1998-12-01 |
Family
ID=16490679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890011478A Expired - Fee Related KR0155151B1 (ko) | 1988-08-17 | 1989-08-11 | 반응처리 장치 및 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4989540A (ko) |
JP (1) | JP2654996B2 (ko) |
KR (1) | KR0155151B1 (ko) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07120634B2 (ja) * | 1988-12-27 | 1995-12-20 | 東京エレクトロン東北株式会社 | 処理装置 |
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JP2598336B2 (ja) * | 1990-09-21 | 1997-04-09 | 株式会社日立製作所 | プラズマ処理装置 |
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JPH0547717A (ja) * | 1991-01-22 | 1993-02-26 | Tokyo Electron Ltd | プラズマ表面処理の終点検出方法及びプラズマ表面処理装置の状態監視方法 |
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JPH04308090A (ja) * | 1991-04-05 | 1992-10-30 | M B K Maikurotetsuku:Kk | 気相化学反応生成装置のロードロック機構 |
JP2819073B2 (ja) * | 1991-04-25 | 1998-10-30 | 東京エレクトロン株式会社 | ドープド薄膜の成膜方法 |
JP2901778B2 (ja) * | 1991-05-08 | 1999-06-07 | セントラル硝子株式会社 | Hfガスによる窒化珪素のクリーニング方法 |
JP2935915B2 (ja) * | 1991-06-12 | 1999-08-16 | セントラル硝子株式会社 | Hfガスによる珪素のクリーニング方法 |
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JPH06151340A (ja) * | 1992-11-13 | 1994-05-31 | Nippon Ee S M Kk | 熱処理装置 |
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JP4523225B2 (ja) * | 2002-09-24 | 2010-08-11 | 東京エレクトロン株式会社 | 熱処理装置 |
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KR100851391B1 (ko) * | 2007-04-27 | 2008-08-08 | 세메스 주식회사 | 탄소나노튜브 합성장치 및 방법 |
JP4918453B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | ガス供給装置及び薄膜形成装置 |
JP2010062318A (ja) * | 2008-09-03 | 2010-03-18 | Tokyo Electron Ltd | ガス供給部材およびプラズマ処理装置 |
JP4564570B2 (ja) * | 2009-03-10 | 2010-10-20 | 三井造船株式会社 | 原子層堆積装置 |
JP5881956B2 (ja) * | 2011-02-28 | 2016-03-09 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびウェーハホルダ |
JP2012195565A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
KR101879175B1 (ko) * | 2011-10-20 | 2018-08-20 | 삼성전자주식회사 | 화학 기상 증착 장치 |
CN104103483B (zh) * | 2013-04-10 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种进气装置及等离子体加工设备 |
CN114551206A (zh) * | 2015-12-04 | 2022-05-27 | 应用材料公司 | 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352356A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Deposition prevention method in hot wall type reaction furnace |
US4430149A (en) * | 1981-12-30 | 1984-02-07 | Rca Corporation | Chemical vapor deposition of epitaxial silicon |
JPS5926238U (ja) * | 1982-08-10 | 1984-02-18 | 日本電気株式会社 | Cvd装置 |
JPS61176113A (ja) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | 半導体処理装置 |
JPS62244123A (ja) * | 1986-04-17 | 1987-10-24 | Toshiba Corp | 気相成長装置 |
JPS62245626A (ja) * | 1986-04-18 | 1987-10-26 | Furendo Tec Kenkyusho:Kk | 半導体製造装置 |
JPS6386424A (ja) * | 1986-09-29 | 1988-04-16 | Nec Corp | 気相成長装置 |
-
1989
- 1989-08-09 JP JP1206402A patent/JP2654996B2/ja not_active Expired - Lifetime
- 1989-08-11 US US07/392,597 patent/US4989540A/en not_active Expired - Lifetime
- 1989-08-11 KR KR1019890011478A patent/KR0155151B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02138473A (ja) | 1990-05-28 |
KR0155151B1 (ko) | 1998-12-01 |
JP2654996B2 (ja) | 1997-09-17 |
US4989540A (en) | 1991-02-05 |
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