[go: up one dir, main page]

KR900003966A - 반응처리장치 및 방법 - Google Patents

반응처리장치 및 방법 Download PDF

Info

Publication number
KR900003966A
KR900003966A KR1019890011478A KR890011478A KR900003966A KR 900003966 A KR900003966 A KR 900003966A KR 1019890011478 A KR1019890011478 A KR 1019890011478A KR 890011478 A KR890011478 A KR 890011478A KR 900003966 A KR900003966 A KR 900003966A
Authority
KR
South Korea
Prior art keywords
reaction
tube
region
gas
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019890011478A
Other languages
English (en)
Other versions
KR0155151B1 (ko
Inventor
노보루 후세
히로부미 기타야마
Original Assignee
노보루 후세
테루 사가미 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노보루 후세, 테루 사가미 가부시끼 가이샤 filed Critical 노보루 후세
Publication of KR900003966A publication Critical patent/KR900003966A/ko
Application granted granted Critical
Publication of KR0155151B1 publication Critical patent/KR0155151B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4558Perforated rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/912Differential etching apparatus having a vertical tube reactor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916Differential etching apparatus including chamber cleaning means or shield for preventing deposits
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/935Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

내용 없음

Description

반응처리장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명에 관한 처리장치의 1실시예인 종형 CVD장치를 나타낸 종단 정면도.
제2도는, 본 발명에 관한 처리장치의 다른 실시예인 다른 형태의 종형 CVD 장치를 나타낸 종단 정면도,
제3도는, 제2도에 도시한 장치에서 사용되고 있는 제1내부관을 나타낸 사시도.

Claims (14)

  1. 반응용기 내로 반응가스를 흘려서 피처리체의 반응처리를 행하는 처리장치로서, 상기 반응용기 내에 붙이고 떼기가 가능하게 배치된 적어도 제1 및 제2의 영역으로 구획하는 구획 수단과, 상기 구획 수단에 의한 제1의 영역에 피처리체를 수용하는 반응부와, 상기 반응용기 내에서 상기 반응부의 내부와, 상기 구획수단에 의한 제2의 영역의 반응부 외부와를 연이어 통하게 하는 수단과, 상기 반응부내로 반응가스를 공급하는 반응가스 공급 수단과, 상기 반응용기 내에서 또한 상기 제2의 영역 외부로 세정 가스를 공급하는 세정가스 공급 수단과, 상기 제2의 영역을 유통로로 하는 가스를 배출 하도록 상기 반응용기에 접속된 배기 수단과, 를 특징으로 하는 반응 처리 장치.
  2. 제1항에 있어서, 세정 가스가 반응처리중에 생성되는 화합물을 분해하는 가승인 것인 반응처리 장치.
  3. 제1항에 있어서, 세정 가스가 불활성 가스인 반응처리 장치.
  4. 제1항에 있어서, 반응용기가 원통형상의 반응관(16)으로 이루어진 반응처리 장치.
  5. 제1항에 있어서, 구획 수단은, 끝단부가 덮여진 내부관(18)으로 이루어지며, 상기 내부관(18)이 반응관(16)내에 동입축을 중심으로한 원형상으로 배치되는 것인 반응처리 장치.
  6. 제1항에 있어서, 연이어 통하게 하는 수단이, 상기 내부관(18)에 뚫려진 가는구멍(34),(36)으로 이루어지는 것인 반응처리 장치.
  7. 제1항에 있어서, 반응관(16)이 수직 상태인 길이 방향의 축을 가지며, 상기 세정 가스 공급 수단이 상기 방응관(16)의 꼭대기부에 접속되고, 상기 배기수단이 상기 반응관(16)의 바닥부에 접속되는 것인 반응처리 장치.
  8. 제1항에 있어서, 구획 수단이, 끝단부가 개구된 제1내부관(78)으로 이루어지고, 상기 제1내부관(78)이 반응관(76)내에 동일축을 중심으로 한 원형상으로 배치되는 것인 반응처리 장치.
  9. 제1항에 있어서, 연이어 통하게 하는 수단이, 상기 내부관(78),(80) 끝단부의 개구로 이루어지는것인 반응처리 장치.
  10. 제8항에 있어서, 반응관(76)과 상기 제1내부관(78)과의 사이에, 끝단부가 개구된 제2내부관(80)이 동일축을 중심으로한 원형상으로 배열 설치되는 것인 반응처리 장치.
  11. 제1항에 있어서, 세정 가스 공급 수단이, 상기 제1내부관(78)과 제2내부관(80)과의 사이의 간격에 접속되고, 상기 배기수단이 상기 제2내부관(80)과 반응관(76)과의 사이의 간격에 접속 되는 것인 반응처리 장치.
  12. 반응 용기내에 적어도 제1 및 제2의 영역을 구획하여 형성하고, 제1의 영역에 피러치체를 수납 하도록한 처리방법에 있어서, 반응영역으로 반응가스를 공급하는 공정과, 피처리체를 처리한 반응가스를 제2의 영역으로 배출하는 공정고, 제2의 영역의 적어도 상기 반응가스의 유통로에 적어도 반응가스가 흐르고 있는 기간동안 세정 가스를 공급하는 공정과, 상기 세정가스 및 반응가스를 배출하는 공정에 의하여 피처리체의 반응처리를 행하는 것을 특징으로 하는 반응처리 방법.
  13. 제12항에 있어서, 반응 처리가 CVD 처리인 것을 특징으로 하는 반응처리 방법.
  14. 제12항에 있어서, 반응처리가 산화처리 인것을 특징으로 하는 반응처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011478A 1988-08-17 1989-08-11 반응처리 장치 및 방법 Expired - Fee Related KR0155151B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP204447 1988-08-17
JP20444788 1988-08-17

Publications (2)

Publication Number Publication Date
KR900003966A true KR900003966A (ko) 1990-03-27
KR0155151B1 KR0155151B1 (ko) 1998-12-01

Family

ID=16490679

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011478A Expired - Fee Related KR0155151B1 (ko) 1988-08-17 1989-08-11 반응처리 장치 및 방법

Country Status (3)

Country Link
US (1) US4989540A (ko)
JP (1) JP2654996B2 (ko)
KR (1) KR0155151B1 (ko)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120634B2 (ja) * 1988-12-27 1995-12-20 東京エレクトロン東北株式会社 処理装置
KR940011005B1 (ko) * 1989-09-09 1994-11-22 캐논 가부시끼가이샤 알킬 알루미늄 하이드라이드를 이용한 퇴적막 형성법
US5127365A (en) * 1990-02-27 1992-07-07 Kabushiki Kaisha Toshiba Vertical heat-treatment apparatus for semiconductor parts
US5279670A (en) * 1990-03-31 1994-01-18 Tokyo Electron Sagami Limited Vertical type diffusion apparatus
JP2598336B2 (ja) * 1990-09-21 1997-04-09 株式会社日立製作所 プラズマ処理装置
US5076206A (en) * 1990-10-31 1991-12-31 Texas Instruments Incorporated Vertical LPCVD reactor
JPH0547717A (ja) * 1991-01-22 1993-02-26 Tokyo Electron Ltd プラズマ表面処理の終点検出方法及びプラズマ表面処理装置の状態監視方法
US5118642A (en) * 1991-01-24 1992-06-02 Daidousanso Co., Ltd. Method for producing semiconductors
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH04308090A (ja) * 1991-04-05 1992-10-30 M B K Maikurotetsuku:Kk 気相化学反応生成装置のロードロック機構
JP2819073B2 (ja) * 1991-04-25 1998-10-30 東京エレクトロン株式会社 ドープド薄膜の成膜方法
JP2901778B2 (ja) * 1991-05-08 1999-06-07 セントラル硝子株式会社 Hfガスによる窒化珪素のクリーニング方法
JP2935915B2 (ja) * 1991-06-12 1999-08-16 セントラル硝子株式会社 Hfガスによる珪素のクリーニング方法
US5443686A (en) * 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes
JPH05217929A (ja) * 1992-01-31 1993-08-27 Tokyo Electron Tohoku Kk 酸化拡散処理装置
TW239164B (ko) * 1992-08-12 1995-01-21 Tokyo Electron Co Ltd
JPH06151340A (ja) * 1992-11-13 1994-05-31 Nippon Ee S M Kk 熱処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5362353A (en) * 1993-02-26 1994-11-08 Lsi Logic Corporation Faraday cage for barrel-style plasma etchers
JP3292540B2 (ja) * 1993-03-03 2002-06-17 東京エレクトロン株式会社 熱処理装置
JP3125199B2 (ja) * 1993-03-18 2001-01-15 東京エレクトロン株式会社 縦型熱処理装置
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH0786173A (ja) * 1993-09-16 1995-03-31 Tokyo Electron Ltd 成膜方法
JP3047344B2 (ja) * 1995-02-14 2000-05-29 日本電気株式会社 常圧cvd装置
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
US5972078A (en) * 1997-07-31 1999-10-26 Fsi International, Inc. Exhaust rinse manifold for use with a coating apparatus
US6027569A (en) * 1998-06-03 2000-02-22 Seh America, Inc. Gas injection systems for a LPCVD furnace
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP3579278B2 (ja) * 1999-01-26 2004-10-20 東京エレクトロン株式会社 縦型熱処理装置及びシール装置
US6296710B1 (en) * 1999-10-06 2001-10-02 Advanced Micro Devices, Inc. Multi-port gas injector for a vertical furnace used in semiconductor processing
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
JP3594235B2 (ja) * 2000-05-22 2004-11-24 インターナショナル・ビジネス・マシーンズ・コーポレーション ガス漏れ防止機能を有する熱処理炉
US20040221810A1 (en) * 2002-06-28 2004-11-11 Miles Ronald O. Process boat and shell for wafer processing
EP1540258A1 (en) * 2002-07-15 2005-06-15 Aviza Technology, Inc. Variable heater element for low to high temperature ranges
JP4523225B2 (ja) * 2002-09-24 2010-08-11 東京エレクトロン株式会社 熱処理装置
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20050121145A1 (en) * 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
US20070240644A1 (en) * 2006-03-24 2007-10-18 Hiroyuki Matsuura Vertical plasma processing apparatus for semiconductor process
KR100851391B1 (ko) * 2007-04-27 2008-08-08 세메스 주식회사 탄소나노튜브 합성장치 및 방법
JP4918453B2 (ja) * 2007-10-11 2012-04-18 東京エレクトロン株式会社 ガス供給装置及び薄膜形成装置
JP2010062318A (ja) * 2008-09-03 2010-03-18 Tokyo Electron Ltd ガス供給部材およびプラズマ処理装置
JP4564570B2 (ja) * 2009-03-10 2010-10-20 三井造船株式会社 原子層堆積装置
JP5881956B2 (ja) * 2011-02-28 2016-03-09 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびウェーハホルダ
JP2012195565A (ja) * 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 基板処理装置、基板処理方法及び半導体装置の製造方法
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
CN104103483B (zh) * 2013-04-10 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种进气装置及等离子体加工设备
CN114551206A (zh) * 2015-12-04 2022-05-27 应用材料公司 用以防止hdp-cvd腔室电弧放电的先进涂层方法及材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace
US4430149A (en) * 1981-12-30 1984-02-07 Rca Corporation Chemical vapor deposition of epitaxial silicon
JPS5926238U (ja) * 1982-08-10 1984-02-18 日本電気株式会社 Cvd装置
JPS61176113A (ja) * 1985-01-31 1986-08-07 Toshiba Corp 半導体処理装置
JPS62244123A (ja) * 1986-04-17 1987-10-24 Toshiba Corp 気相成長装置
JPS62245626A (ja) * 1986-04-18 1987-10-26 Furendo Tec Kenkyusho:Kk 半導体製造装置
JPS6386424A (ja) * 1986-09-29 1988-04-16 Nec Corp 気相成長装置

Also Published As

Publication number Publication date
JPH02138473A (ja) 1990-05-28
KR0155151B1 (ko) 1998-12-01
JP2654996B2 (ja) 1997-09-17
US4989540A (en) 1991-02-05

Similar Documents

Publication Publication Date Title
KR900003966A (ko) 반응처리장치 및 방법
ES2068329T3 (es) Aparato para tratar una solucion o una suspension.
ATE120400T1 (de) Vorrichtung und verfahren für die plasmabehandlung dünner schläuche.
KR920012537A (ko) 화학기상 성장장치
ES295804U (es) Elemento de insercion para un dispositivo depurador de agua
KR860007980A (ko) 야금용 배출 슬리이브
DE3371367D1 (en) Top-blown lance for a metallurgical converter
DE3660212D1 (en) Nozzle for the pneumatic introduction of solids
GB2219311A (en) Gas inlet and discharge attachment for the gas-phase processing of workpieces
SU937932A1 (ru) Аппарат дл термообработки сыпучих материалов
US5135391A (en) Semiconductor processing gas diffuser plate
JPS57142777A (en) Welding device for inside surface of steel pipe
JPS6233769A (ja) 液体原料のバブリング装置
DE58907970D1 (de) Vorrichtung zur Gasreinigung.
GB1521226A (en) Apparatus for cleaning and/or cooling a gas flow
ZA9579B (en) Washing apparatus
CA1259883A (en) Gas supply device, particularly for manufacturing semiconductor elements
KR970015796A (ko) Mocvd 성장용 보조장치
JPS5714736A (en) Rapid, wet-type sample decomposing device
SU787846A2 (ru) Установка дл сушки растворов,суспензий,паст и сыпучих материалов
US2458321A (en) Flow tube
US4783058A (en) Lance for treating molten metal
DE60008182D1 (de) Dampfschälvorrichtung
JPH0835932A (ja) レーザーアブレーション装置
KR920000710B1 (ko) 반도체 기판의 열처리 장치

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20030708

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20040715

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20040715