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KR900000166B1 - Semiconductor memory device promoted the adaptibility - Google Patents

Semiconductor memory device promoted the adaptibility

Info

Publication number
KR900000166B1
KR900000166B1 KR8507053A KR850007053A KR900000166B1 KR 900000166 B1 KR900000166 B1 KR 900000166B1 KR 8507053 A KR8507053 A KR 8507053A KR 850007053 A KR850007053 A KR 850007053A KR 900000166 B1 KR900000166 B1 KR 900000166B1
Authority
KR
South Korea
Prior art keywords
output
memory cell
adaptibility
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8507053A
Other languages
English (en)
Other versions
KR860002827A (ko
Inventor
Damio Miyamura
Dakasi Ohkawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR860002827A publication Critical patent/KR860002827A/ko
Application granted granted Critical
Publication of KR900000166B1 publication Critical patent/KR900000166B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR8507053A 1984-09-25 1985-09-25 Semiconductor memory device promoted the adaptibility Expired KR900000166B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59-198607 1984-09-25
JP59198607A JPS6177914A (ja) 1984-09-25 1984-09-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR860002827A KR860002827A (ko) 1986-04-30
KR900000166B1 true KR900000166B1 (en) 1990-01-23

Family

ID=16394003

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8507053A Expired KR900000166B1 (en) 1984-09-25 1985-09-25 Semiconductor memory device promoted the adaptibility

Country Status (5)

Country Link
US (1) US4694431A (ko)
EP (1) EP0177395B1 (ko)
JP (1) JPS6177914A (ko)
KR (1) KR900000166B1 (ko)
DE (1) DE3579654D1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879680A (en) * 1985-10-18 1989-11-07 Texas Instruments Incorporated Multi-slave master-slave flip-flop
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5230058A (en) * 1989-12-05 1993-07-20 Zilog, Inc. IC chip having volatile memory cells simultaneously loaded with initialization data from uniquely associated non-volatile memory cells via switching transistors
US5270973A (en) * 1990-08-06 1993-12-14 Texas Instruments Incorporated Video random access memory having a split register and a multiplexer
US5535367A (en) * 1991-03-04 1996-07-09 Motorola, Inc. Demultiplexing initialization data to be transferred to memory through a plurality of registers with error detection data
US6445606B1 (en) * 2001-05-10 2002-09-03 Koninklijke Philips Electronics N.V. Secure poly fuse ROM with a power-on or on-reset hardware security features and method therefor
US20050127107A1 (en) * 2001-09-21 2005-06-16 Pierre Mbonyumuhire Dosing device with a medium reservoir and a pump device
US7200743B1 (en) 2002-09-30 2007-04-03 Mindspeed Technologies, Inc. Simultaneous initialization of a plurality of memory elements from among a plurality of initialization values
KR20150025782A (ko) * 2013-08-30 2015-03-11 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 컴퓨터 시스템

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346576B2 (ko) * 1974-05-09 1978-12-14
JPS55142475A (en) * 1979-04-23 1980-11-07 Fujitsu Ltd Decoder circuit

Also Published As

Publication number Publication date
KR860002827A (ko) 1986-04-30
EP0177395B1 (en) 1990-09-12
EP0177395A2 (en) 1986-04-09
JPS6177914A (ja) 1986-04-21
EP0177395A3 (en) 1988-07-06
DE3579654D1 (de) 1990-10-18
US4694431A (en) 1987-09-15

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19930109

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee