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KR890011016A - 반도체 결정의 슬라이싱 방법 - Google Patents

반도체 결정의 슬라이싱 방법 Download PDF

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Publication number
KR890011016A
KR890011016A KR1019880016697A KR880016697A KR890011016A KR 890011016 A KR890011016 A KR 890011016A KR 1019880016697 A KR1019880016697 A KR 1019880016697A KR 880016697 A KR880016697 A KR 880016697A KR 890011016 A KR890011016 A KR 890011016A
Authority
KR
South Korea
Prior art keywords
slicing
mounting beam
semiconductor crystal
mounting
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019880016697A
Other languages
English (en)
Inventor
에이. 하바거 죠세핀
Original Assignee
빈센트 죠셉 로너
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 죠셉 로너, 모토로라 인코포레이티드 filed Critical 빈센트 죠셉 로너
Publication of KR890011016A publication Critical patent/KR890011016A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/06Grinders for cutting-off
    • B24B27/0675Grinders for cutting-off methods therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

내용 없음

Description

반도체 결정의 슬라이싱 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명을 구체화하는 장착빔을 나타내는 도면.
제4도는 장착된 다수의 반도체 결정을 가지는 제3도의 장착빔을 나타내는 도면.
제5도는 제4도의 장착빔 및 결정의 측면도.

Claims (3)

  1. 반도체 결정을 스라이싱하는 방법에 있어서, 장착빔을 제공하는 단계, 장칙빔상에 반도체 결정을 장착시키는 단계, 반도체 결정 및 장착빔을 슬라이싱 장치내로 삽입하는 단계, 슬라이싱 장치의 날을 사용하여 반도체 결정을 슬라이싱하는 단계 및, 장착빔을 슬라이싱 함으로써 날을 드레싱 하는 단계를 구비하는 것을 특징으로 하는 반도체 결정의 슬라이싱 방법.
  2. 반도체 결정을 슬라이싱하는 방법에 있어서, V-형의 제1표면 및 제1표면에 의해 정의된 홈을 구비하는 장착빔을 제공하는 단계, 장착빔의 제1표면상에 반도체 결정을 장착하는 단계, 슬라이싱 장치내로 반도체 결정 및 장착빔을 삽입하는 단계, 슬라이싱 장치의 날을 사용하여 반도체 결정을 슬라이싱 하는 단계 및, 장착빔을 스라이싱하는 동안에 날을 드레싱 하는 단계를 구비하는 것을 특징으로 하는 반도체 결정의 슬라이싱 방법.
  3. 반도체 결정을 슬라이싱하는 방법에 있어서, 제1영역 및 제2영역을 구비하는데 제1영역의 표면은 V-형이고 홈을 가지며 제2영역은 제1영역에 결합되고 제2영역내의 개구 및, 날을 드레싱하는 드레싱 수단을 정의하며, 드레싱 수단은 제2영역에 의해 정의된 개구에 배치되는 장칙빔을 제공하는 단계, 장착빔의 제1표면상에 반도체 결정을 장착시키는 단계, 슬라이싱 장치내로 반도체 결정 및 장착빔을 삽입하는 단계, 슬라이싱 장치의 날을 사용하여 반도체 결정을 슬라이싱하는 단계, 장착빔의 제1부분을 슬라이싱 하는 단계, 장착빔의 제2부분을 슬라이싱 하는 단계, 장착빔의 제2부분의 개구에 배치된 드레싱 수단을 슬라이싱 함으로써 날을 드레싱 하는 단계를 구비하는 것을 특징으로 하는 반도체 결정의 슬라이싱 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016697A 1987-12-16 1988-12-15 반도체 결정의 슬라이싱 방법 Withdrawn KR890011016A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/133,863 US4819387A (en) 1987-12-16 1987-12-16 Method of slicing semiconductor crystal
US133,863 1987-12-16

Publications (1)

Publication Number Publication Date
KR890011016A true KR890011016A (ko) 1989-08-12

Family

ID=22460649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016697A Withdrawn KR890011016A (ko) 1987-12-16 1988-12-15 반도체 결정의 슬라이싱 방법

Country Status (4)

Country Link
US (1) US4819387A (ko)
JP (1) JPH01191425A (ko)
KR (1) KR890011016A (ko)
DE (1) DE3833151A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08290353A (ja) * 1995-04-19 1996-11-05 Komatsu Electron Metals Co Ltd 半導体単結晶インゴット切断治具
ATE275761T1 (de) * 1997-03-26 2004-09-15 Canon Kk Halbleitersubstrat und verfahren zu dessen herstellung
US6367467B1 (en) * 1999-06-18 2002-04-09 Virginia Semiconductor Holding unit for semiconductor wafer sawing
US6390889B1 (en) * 1999-09-29 2002-05-21 Virginia Semiconductor Holding strip for a semiconductor ingot
JP4721743B2 (ja) * 2005-03-29 2011-07-13 京セラ株式会社 半導体ブロックの保持装置
KR100884246B1 (ko) * 2007-08-24 2009-02-17 주식회사 다우빔 실리콘 인고트 절단용 받침대
DE102009035341A1 (de) * 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Vorrichtung zur Reinigung von Substraten an einem Träger
DE102010031364A1 (de) * 2010-07-15 2012-01-19 Gebr. Schmid Gmbh & Co. Träger für einen Siliziumblock, Trägeranordnung mit einem solchen Träger und Verfahren zur Herstellung einer solchen Trägeranordnung
EP2520401A1 (en) * 2011-05-05 2012-11-07 Meyer Burger AG Method for fixing a single-crystal workpiece to be treated on a processing device
CN102490281B (zh) * 2011-11-29 2014-07-30 河海大学常州校区 用于晶硅切方机的夹具
JP2014024135A (ja) * 2012-07-25 2014-02-06 Disco Abrasive Syst Ltd ドレッシングボード及び切削方法
DE102013200467A1 (de) 2013-01-15 2014-07-17 Siltronic Ag Klemmbare Aufkittleiste für einen Drahtsägeprozess
CN103434037A (zh) * 2013-08-30 2013-12-11 天津市环欧半导体材料技术有限公司 一种多晶棒料车削夹具及车削方法
US20150105006A1 (en) * 2013-10-11 2015-04-16 HGST Netherlands B.V. Method to sustain minimum required aspect ratios of diamond grinding blades throughout service lifetime
CN107096634A (zh) * 2016-02-23 2017-08-29 内蒙古盾安光伏科技有限公司 多晶硅碎料平台及碎料方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2709384A (en) * 1954-06-24 1955-05-31 Thomas J Harris Portable pipe vise
US4228782A (en) * 1978-09-08 1980-10-21 Rca Corporation System for regulating the applied blade-to-boule force during the slicing of wafers
US4227348A (en) * 1978-12-26 1980-10-14 Rca Corporation Method of slicing a wafer
GB2101914B (en) * 1981-07-17 1985-08-07 Atopsy Limited Vee block
US4420909B2 (en) * 1981-11-10 1997-06-10 Silicon Technology Wafering system
JPS62743A (ja) * 1985-06-25 1987-01-06 Mitsubishi Electric Corp 加湿器
US4667650A (en) * 1985-11-21 1987-05-26 Pq Corporation Mounting beam for preparing wafers

Also Published As

Publication number Publication date
JPH01191425A (ja) 1989-08-01
US4819387A (en) 1989-04-11
DE3833151A1 (de) 1989-06-29

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19881215

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid