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ATE275761T1 - Halbleitersubstrat und verfahren zu dessen herstellung - Google Patents

Halbleitersubstrat und verfahren zu dessen herstellung

Info

Publication number
ATE275761T1
ATE275761T1 AT98302187T AT98302187T ATE275761T1 AT E275761 T1 ATE275761 T1 AT E275761T1 AT 98302187 T AT98302187 T AT 98302187T AT 98302187 T AT98302187 T AT 98302187T AT E275761 T1 ATE275761 T1 AT E275761T1
Authority
AT
Austria
Prior art keywords
porous
substrate
image
layer
insulating layer
Prior art date
Application number
AT98302187T
Other languages
English (en)
Inventor
Kazuaki Ohmi
Takao Yonehara
Kiyofumi Sakaguchi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE275761T1 publication Critical patent/ATE275761T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Crystal (AREA)
AT98302187T 1997-03-26 1998-03-24 Halbleitersubstrat und verfahren zu dessen herstellung ATE275761T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7351997 1997-03-26

Publications (1)

Publication Number Publication Date
ATE275761T1 true ATE275761T1 (de) 2004-09-15

Family

ID=13520585

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98302187T ATE275761T1 (de) 1997-03-26 1998-03-24 Halbleitersubstrat und verfahren zu dessen herstellung

Country Status (10)

Country Link
US (1) US20030190794A1 (de)
EP (1) EP0867919B1 (de)
KR (1) KR100356416B1 (de)
CN (1) CN1114936C (de)
AT (1) ATE275761T1 (de)
AU (1) AU742371B2 (de)
CA (1) CA2233132C (de)
DE (1) DE69826053T2 (de)
SG (1) SG68033A1 (de)
TW (1) TW376585B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2233115C (en) * 1997-03-27 2002-03-12 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
WO2004068567A1 (de) * 2003-01-31 2004-08-12 Osram Opto Semiconductors Gmbh Dünnfilmhalbleiterbauelement und verfahren zu dessen herstellung
CN100530705C (zh) 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
EP1620583A4 (de) 2003-05-06 2009-04-22 Canon Kk Halbleitersubstrat, halbleitervorrichtung, leuchtdiode und herstellungsverfahren dafür
JP2004335662A (ja) 2003-05-06 2004-11-25 Canon Inc 部材及び部材の製造方法
JP2004335642A (ja) 2003-05-06 2004-11-25 Canon Inc 基板およびその製造方法
DE102005047149A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, damit hergestelltes Bauelement sowie entsprechende Herstellverfahren
DE102007021991B4 (de) * 2007-05-10 2015-03-26 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements durch Ausbilden einer porösen Zwischenschicht
KR101443580B1 (ko) * 2007-05-11 2014-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Soi구조를 갖는 기판
DE102009004559A1 (de) * 2009-01-14 2010-07-22 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Halbleiterdünnschicht mit einem direkten Halbleitermaterial
DE102009004560B3 (de) * 2009-01-14 2010-08-26 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Germaniumdünnschicht
US8043938B2 (en) * 2009-05-14 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and SOI substrate
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
US8441071B2 (en) * 2010-01-05 2013-05-14 International Business Machines Corporation Body contacted transistor with reduced parasitic capacitance
US8476147B2 (en) * 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
FR2995444B1 (fr) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator Procede de detachement d'une couche
EP2912685B1 (de) * 2012-10-26 2020-04-08 RFHIC Corporation Halbleiterbauelemente mit verbesserter zuverlässigkeit und gebrauchsdauer und verfahren zur herstellung davon
US20180068886A1 (en) * 2016-09-02 2018-03-08 Qualcomm Incorporated Porous semiconductor layer transfer for an integrated circuit structure
JP2019033134A (ja) * 2017-08-04 2019-02-28 株式会社ディスコ ウエーハ生成方法
US11211259B2 (en) * 2018-04-20 2021-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for embedded gettering in a silicon on insulator wafer
CN114207782A (zh) * 2019-07-19 2022-03-18 Iqe公开有限公司 具有可调介电常数和可调热导率的半导体材料
US11903300B2 (en) * 2019-11-18 2024-02-13 Universal Display Corporation Pixel configurations for high resolution OVJP printed OLED displays
DE202024100459U1 (de) * 2023-01-30 2024-05-14 Umicore Verbundhalbleitersubstrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985005734A1 (en) * 1984-05-29 1985-12-19 Mitsui Toatsu Chemicals, Incorporated Film for machining wafers
US4819387A (en) * 1987-12-16 1989-04-11 Motorola, Inc. Method of slicing semiconductor crystal
DE69331816T2 (de) * 1992-01-31 2002-08-29 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung eines Halbleitersubstrats
KR970009156A (ko) * 1995-07-07 1997-02-24 김광호 보호모드를 가지는 팩시밀리 시스템
US6136684A (en) * 1995-07-21 2000-10-24 Canon Kabushiki Kaisha Semiconductor substrate and process for production thereof
EP0797258B1 (de) * 1996-03-18 2011-07-20 Sony Corporation Herstellungsverfahren von Dünnschichthalbleitern, Solarzellen und lichtemittierenden Dioden
EP0840381A3 (de) * 1996-10-31 1999-08-04 Sony Corporation Dünnschicht-Halbleiter-Vorrichtung und Verfahren und Vorrichtung zu ihrer Herstellung und Dünnschicht-Sonnenzellenmodul und Herstellungsverfahren
SG54593A1 (en) * 1996-11-15 1998-11-16 Canon Kk Method of manufacturing semiconductor article

Also Published As

Publication number Publication date
AU5966698A (en) 1998-10-01
DE69826053D1 (de) 2004-10-14
TW376585B (en) 1999-12-11
US20030190794A1 (en) 2003-10-09
EP0867919B1 (de) 2004-09-08
KR19980080688A (ko) 1998-11-25
CA2233132A1 (en) 1998-09-26
CN1114936C (zh) 2003-07-16
AU742371B2 (en) 2002-01-03
DE69826053T2 (de) 2005-09-29
KR100356416B1 (ko) 2002-11-18
CN1200560A (zh) 1998-12-02
EP0867919A2 (de) 1998-09-30
EP0867919A3 (de) 1999-06-16
SG68033A1 (en) 1999-10-19
CA2233132C (en) 2002-04-02

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Legal Events

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