KR890003013A - 반도체 장치용 부품간의 접속 구조물 - Google Patents
반도체 장치용 부품간의 접속 구조물 Download PDFInfo
- Publication number
- KR890003013A KR890003013A KR1019880008211A KR880008211A KR890003013A KR 890003013 A KR890003013 A KR 890003013A KR 1019880008211 A KR1019880008211 A KR 1019880008211A KR 880008211 A KR880008211 A KR 880008211A KR 890003013 A KR890003013 A KR 890003013A
- Authority
- KR
- South Korea
- Prior art keywords
- alloy
- iron
- nickel
- substrate
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3405—Edge mounted components, e.g. terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/1025—Metallic discs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/1034—Edge terminals, i.e. separate pieces of metal attached to the edge of the printed circuit board [PCB]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10742—Details of leads
- H05K2201/10886—Other details
- H05K2201/10909—Materials of terminal, e.g. of leads or electrodes of components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10742—Details of leads
- H05K2201/10886—Other details
- H05K2201/10916—Terminals having auxiliary metallic piece, e.g. for soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
Claims (19)
- 반도체 장치의 부품간 접속 구조물에 있어서, 반도체 장치가 설치되는 주 표면을 가진 질화 알루미늄의 기재와, 상기 기재에 결합되면서 주 재료의 철-니켈 합금과 철-니켈-코발트 합금의 어느 것을 포함하는 접속 부재와, 상기 접속 부재 사이에 개재된 응력 제거 부재와, 상기 기재, 상기 응력 제거 부재 및 상기 접속 부재를 결합시키는 납땜 재료를 포함하며, 상기 응력 제거 부재는 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되어 납땜시의 냉각 처리시 상기 기재의 열팽창 계수와 상기 접속 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 접속 구조물.
- 제 1 항에 있어서, 상기 응력 제거 부재는 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 접속 부재는 리드 프레임을 포함하는 것이 특징인 접속 구조물.
- 제 3 항에 있어서, 상기 응력 제거 부재는, 상기 리드 프레임이 0.1 mm의 두께와 8mm폭을 가질때 0.01 내지 1mm범위의 두께를 가지는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 기재는 소결체를 포함하는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 접속 구조물은 상기 기재의 접합면상에 형성된 금속화층을 추가로 포함하는 것이 특징인 접속 구조물.
- 제 6 항에 있어서, 상기 금속화층은 텅스텐과 몰리브덴 중에서 선택된 적어도 하나의 금속과, 질화 알루미늄, 산화 알루미늄 및 산소 질화 알루미늄의 그룹 중에서 선택된 적어도 하나의 알루미늄 화합물을 산화칼슘을 포함하는 것이 특징인 접속 구조물.
- 제 6 항에 있어서, 상기 납땜 재료와 결합되기 위하여 상기 접속 부재의 표면상에 형성된 도금층을 추가로 포함하는 것이 특징인 접속 구조물.
- 제 8 항에 있어서, 상기 납땜 재료와 결합되기 위하여 상기 접속 부재의 표면상에 형성된 도금층을 추가로 포함하는 것이 특징인 접속 구조물.
- 반도체 장치의 부품간 접속 구조물에 있어서, 반도체 장치가 설치되는 주 표면을 가진 질화 알루미늄의 기재와, 상기 기재에 결합되면서 주 재료의 철-니켈 합금과 철-니켈-코발트 합금의 어느 것을 포함하는 접속 부재와, 상기 기재와 상기 부재를 결합시키는 납땜 재료와, 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되면서 상기 기재에 결합되는 상기 접속 부재의 적어도 한 표면을 포함하여, 납땜시의 냉각 처리시 상기 기재의 열 팽창 계수와 상기 접속 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 접속 구조물.
- 제10항에 있어서, 상기 기재에 결합되는 상기 접속 부재의 적어도 한 표면은 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것이 특징인 접속 구조물.
- 제10항에 있어서, 상기 접속 부재는 리드 프레임을 포함하는 것이 특징인 접속 구조물.
- 제12항에 있어서, 상기 기재에 결합되는 상기 접속 부재의 적어도 한 부분은 철-니켈 합금과 철-니켈-코발트 중의 어느 것으로 형성된 내층부와 연성 금속 및 연성 합금중의 어느 것으로 형성된 외층부를 포함하는 것을 특징으로 하는 접속 구조물.
- 제13항에 있어서, 상기 접속 부재는 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것으로 형성된, 상기 기재에 결합되는 부분 이외의 다른 부분을 가지는 것이 특징인 접속 구조물.
- 절연 기판상에 설치된 반도체 장치를 기밀적으로 둘러싸는 캡에 있어서, 상기 반도체 장치를 보호하기 위하여 상기 반도체 장치상에 구비된 질화 알루미늄의 덮개 부재와, 상기 덮개 부재 아래에 위치된 상기 반도체 장치를 둘러싸기 위하여 상기 덮개 부재에 결합되면서, 주 재료로서 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것을 포함하는 프레임 부재와, 상기 덮개 부재와 상기 프레임 부재 사이에 개재된 응력 제거 부재와, 상기 덮개 부재, 상기 응력 제거 부재 및 상기 프레임 부재를 결합시키는 납땜 재료를 포함하며, 상기 응력 제거 부재는 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되어 납땜시의 냉각 처리시 상기 덮개 부재의 열 팽창 계수와 상기 프레임 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 캡.
- 제15항에 있어서, 상기 응력 제거 부재는 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것을 특징으로 하는캡.
- 절연 기판상에 설치된 반도체 장치를 기밀적으로 둘러싸는 캡에 있어서, 상기 반도체 장치를 보호하기 위하여 상기 반도체 장치상에 구비된 질화 알루미늄의 덮개 부재와, 상기 덮개 부재 아래에 위치된 상기 반도체 장치를 둘러싸기 위하여 상기 덮개 부재에 결합되면서, 주 재료로서 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것을 포함하는 프레임 부재와, 상기 덮개 부재와 상기 프레임 부재를 결합시키는 납땜 재료와, 가소성으로 변형되는 높은 플라스틱 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되면서 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 표면을 포함하여, 납땜시의 냉각 처리시 상기 덮개 부재의 열 팽창 계수와 상기 프레임 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 캡.
- 제17항에 있어서, 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 표면은 구리, 구리합금, 니켈, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것을 특징으로 한는 캡.
- 제17항에 있어서, 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 부분은 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것으로 형성된 내층부와, 연성 금속 및 연성 합금중의 어느 것으로 형성된 외층부를 포함하는 것이 특징인 캡.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16519087 | 1987-07-03 | ||
JP165190 | 1987-07-03 | ||
JP62-165190 | 1987-07-03 | ||
JP175070 | 1987-07-14 | ||
JP17507087 | 1987-07-14 | ||
JP62-175070 | 1987-07-14 | ||
JP27527787 | 1987-10-30 | ||
JP275277 | 1987-10-30 | ||
JP62-275277 | 1987-10-30 | ||
JP62-315330 | 1987-12-15 | ||
JP31533087 | 1987-12-15 | ||
JP315330 | 1988-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890003013A true KR890003013A (ko) | 1989-04-12 |
KR910007016B1 KR910007016B1 (ko) | 1991-09-14 |
Family
ID=27473981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880008211A KR910007016B1 (ko) | 1987-07-03 | 1988-07-02 | 반도체 장치용 부품간의 접속 구조물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5010388A (ko) |
EP (1) | EP0297511B1 (ko) |
KR (1) | KR910007016B1 (ko) |
CA (1) | CA1308494C (ko) |
DE (1) | DE3856562T2 (ko) |
SG (1) | SG48868A1 (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
US5134459A (en) * | 1989-05-01 | 1992-07-28 | Sumitomo Electric Industries, Ltd. | Lead frame for semiconductor device |
KR920000127A (ko) * | 1990-02-26 | 1992-01-10 | 미다 가쓰시게 | 반도체 패키지와 그것을 위한 리드프레임 |
US5179435A (en) * | 1990-03-05 | 1993-01-12 | Nec Corporation | Resin sealed semiconductor integrated circuit device |
US5220200A (en) * | 1990-12-10 | 1993-06-15 | Delco Electronics Corporation | Provision of substrate pillars to maintain chip standoff |
WO1992022090A1 (en) * | 1991-06-03 | 1992-12-10 | Motorola, Inc. | Thermally conductive electronic assembly |
US5432535A (en) * | 1992-12-18 | 1995-07-11 | Xerox Corporation | Method and apparatus for fabrication of multibeam lasers |
US6696103B1 (en) | 1993-03-19 | 2004-02-24 | Sumitomo Electric Industries, Ltd. | Aluminium nitride ceramics and method for preparing the same |
JP3593707B2 (ja) * | 1993-03-19 | 2004-11-24 | 住友電気工業株式会社 | 窒化アルミニウムセラミックスとその製造方法 |
JP3693300B2 (ja) * | 1993-09-03 | 2005-09-07 | 日本特殊陶業株式会社 | 半導体パッケージの外部接続端子及びその製造方法 |
JP3575068B2 (ja) * | 1994-08-02 | 2004-10-06 | 住友電気工業株式会社 | 平滑なめっき層を有するセラミックスメタライズ基板およびその製造方法 |
US5522535A (en) * | 1994-11-15 | 1996-06-04 | Tosoh Smd, Inc. | Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies |
US5593082A (en) * | 1994-11-15 | 1997-01-14 | Tosoh Smd, Inc. | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby |
WO1996015283A1 (en) * | 1994-11-15 | 1996-05-23 | Tosoh Smd, Inc. | Method of bonding targets to backing plate member |
JP3845925B2 (ja) * | 1996-02-05 | 2006-11-15 | 住友電気工業株式会社 | 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法 |
US6783867B2 (en) * | 1996-02-05 | 2004-08-31 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
DE10221085B4 (de) * | 2002-05-11 | 2012-07-26 | Robert Bosch Gmbh | Baugruppe mit einer Verbindungseinrichtung zum Kontaktieren eines Halbleiter-Bauelements und Herstellungsverfahren |
KR101011412B1 (ko) * | 2004-11-12 | 2011-01-28 | 가부시끼가이샤 도꾸야마 | 메탈라이즈드 질화알루미늄 기판의 제조 방법 및 그것에의해서 얻어지는 기판 |
KR20090042574A (ko) * | 2007-10-26 | 2009-04-30 | 삼성전자주식회사 | 반도체 모듈 및 이를 구비하는 전자 장치 |
JP2011187687A (ja) * | 2010-03-09 | 2011-09-22 | Panasonic Corp | 半導体装置用リードフレームとその製造方法 |
WO2013094755A1 (ja) | 2011-12-22 | 2013-06-27 | 京セラ株式会社 | 配線基板および電子装置 |
KR102335720B1 (ko) * | 2017-03-27 | 2021-12-07 | 삼성전자주식회사 | 표면 실장용 금속 유닛 및 이를 포함하는 전자 장치 |
US11636991B2 (en) * | 2018-05-30 | 2023-04-25 | Bourns Kk | Breaker, safety circuit, and secondary battery pack |
CN112352309B (zh) | 2018-06-28 | 2023-10-10 | 京瓷株式会社 | 基体以及半导体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS607157A (ja) * | 1983-06-25 | 1985-01-14 | Masami Kobayashi | Ic用リ−ドフレ−ム |
JPH0810710B2 (ja) * | 1984-02-24 | 1996-01-31 | 株式会社東芝 | 良熱伝導性基板の製造方法 |
JPS61176142A (ja) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | 基板構造体 |
US4780572A (en) * | 1985-03-04 | 1988-10-25 | Ngk Spark Plug Co., Ltd. | Device for mounting semiconductors |
JPH0791610B2 (ja) * | 1985-06-17 | 1995-10-04 | 日本電装株式会社 | 非酸化物セラミックヒータ用金属ロー材 |
US4729010A (en) * | 1985-08-05 | 1988-03-01 | Hitachi, Ltd. | Integrated circuit package with low-thermal expansion lead pieces |
JPS62197379A (ja) * | 1986-02-20 | 1987-09-01 | 株式会社東芝 | 窒化アルミニウム基板 |
JPH0680873B2 (ja) * | 1986-07-11 | 1994-10-12 | 株式会社東芝 | 回路基板 |
JPS6318648A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | 窒化アルミニウム回路基板 |
US4761518A (en) * | 1987-01-20 | 1988-08-02 | Olin Corporation | Ceramic-glass-metal packaging for electronic components incorporating unique leadframe designs |
-
1988
- 1988-06-28 EP EP88110305A patent/EP0297511B1/en not_active Expired - Lifetime
- 1988-06-28 DE DE3856562T patent/DE3856562T2/de not_active Expired - Lifetime
- 1988-06-28 US US07/212,944 patent/US5010388A/en not_active Expired - Lifetime
- 1988-06-28 SG SG1996003201A patent/SG48868A1/en unknown
- 1988-06-28 CA CA000570627A patent/CA1308494C/en not_active Expired - Lifetime
- 1988-07-02 KR KR1019880008211A patent/KR910007016B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA1308494C (en) | 1992-10-06 |
KR910007016B1 (ko) | 1991-09-14 |
EP0297511A3 (en) | 1991-03-13 |
EP0297511A2 (en) | 1989-01-04 |
DE3856562T2 (de) | 2004-08-05 |
DE3856562D1 (de) | 2003-11-13 |
SG48868A1 (en) | 1998-05-18 |
US5010388A (en) | 1991-04-23 |
EP0297511B1 (en) | 2003-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890003013A (ko) | 반도체 장치용 부품간의 접속 구조물 | |
US5001546A (en) | Clad metal lead frame substrates | |
US4542259A (en) | High density packages | |
KR100264022B1 (ko) | 반도체장치 | |
US5329159A (en) | Semiconductor device employing an aluminum clad leadframe | |
US3387191A (en) | Strain relieving transition member for contacting semiconductor devices | |
KR20050105168A (ko) | 비-세라믹 기반 윈도우 프레임을 갖는 반도체 패키지 | |
JP2002513234A (ja) | 電子構成素子 | |
JPH0222540B2 (ko) | ||
US7042103B2 (en) | Low stress semiconductor die attach | |
KR950024315A (ko) | 반도체용 리드 프레임 및 그 제조방법 | |
US5001547A (en) | Method and apparatus for improving thermal coupling between a cooling plate of a semiconductor package housing and a heat sink | |
US5942796A (en) | Package structure for high-power surface-mounted electronic devices | |
JPH04192341A (ja) | 半導体装置 | |
US5336639A (en) | Method for securing a semiconductor chip to a leadframe | |
US5046656A (en) | Vacuum die attach for integrated circuits | |
US5825093A (en) | Attachment system and method therefor | |
JP4339982B2 (ja) | 気密端子 | |
JPH07273256A (ja) | 半導体装置および該装置用ヒートスプレッダー | |
JP2525873B2 (ja) | 半導体装置用部品間の接続構造 | |
JP2841259B2 (ja) | 半導体素子用セラミック容器 | |
JP2870501B2 (ja) | 半導体装置 | |
JPH06196614A (ja) | リードフレーム | |
JPH02146748A (ja) | 半導体容器 | |
JPH0319258Y2 (ko) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19880702 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19880702 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
G160 | Decision to publish patent application | ||
PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19910817 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19911130 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19920214 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 19920214 End annual number: 3 Start annual number: 1 |
|
PR1001 | Payment of annual fee |
Payment date: 19940909 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 19950905 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 19960827 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 19970822 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 19971230 Start annual number: 8 End annual number: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20010905 Start annual number: 11 End annual number: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20020905 Start annual number: 12 End annual number: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20030908 Start annual number: 13 End annual number: 13 |
|
PR1001 | Payment of annual fee |
Payment date: 20040910 Start annual number: 14 End annual number: 14 |
|
PR1001 | Payment of annual fee |
Payment date: 20050909 Start annual number: 15 End annual number: 15 |
|
PR1001 | Payment of annual fee |
Payment date: 20060908 Start annual number: 16 End annual number: 16 |
|
FPAY | Annual fee payment |
Payment date: 20070906 Year of fee payment: 17 |
|
PR1001 | Payment of annual fee |
Payment date: 20070906 Start annual number: 17 End annual number: 17 |
|
EXPY | Expiration of term | ||
PC1801 | Expiration of term |