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KR880011363A - 스퍼터링 타겟 - Google Patents

스퍼터링 타겟 Download PDF

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Publication number
KR880011363A
KR880011363A KR1019880002359A KR880002359A KR880011363A KR 880011363 A KR880011363 A KR 880011363A KR 1019880002359 A KR1019880002359 A KR 1019880002359A KR 880002359 A KR880002359 A KR 880002359A KR 880011363 A KR880011363 A KR 880011363A
Authority
KR
South Korea
Prior art keywords
sputtering target
blocks
block composed
combination block
shaped
Prior art date
Application number
KR1019880002359A
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English (en)
Other versions
KR910007947B1 (ko
Inventor
요시하루 후카사와
미쯔오 가와이
히데오 이시하라
야마노베다카시
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12845019&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR880011363(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR880011363A publication Critical patent/KR880011363A/ko
Application granted granted Critical
Publication of KR910007947B1 publication Critical patent/KR910007947B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

스퍼터링 타겟
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 내지 제 3 도는 본 발명의 스퍼터링 타겟의 전체 형상을 나타낸 사시도이다.

Claims (3)

  1. 용해법으로 제조된 하나 이상의 금속 또는 그 합금으로 구성된 단일 블럭 : 다수의 단일 블럭들로된 조합블럭 : 또는 단일 블럭들과 실리콘 블럭들로된 조합블럭으로 이루어지며, 금속또는 합금의 결정입자의 평균크기가 1μm 내지 1mm인 것을 특징으로 하는 스퍼터링 타겟.
  2. 제 1 항에 있어서, 단일 블럭, 다수의 단일 블럭들로된 조합블럭의 전체 형상이 원판형상 또는 각판형상인것을 특징으로 하는 스퍼터링 타겟.
  3. 제 1 항에 있어서, 구성금속이 Mo, W, Ta, Nb, Ti, Ni, V, Cr 및 Al 로 구성된 그룹으로부터 선택된 적어도 하나인것을 특징으로 하는 스퍼터링 타겟.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880002359A 1987-03-06 1988-03-05 스퍼터링 타겟 KR910007947B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP?62-49940 1987-03-06
JP62049940A JPS63216966A (ja) 1987-03-06 1987-03-06 スパツタタ−ゲツト
JP62-49940 1987-03-06

Publications (2)

Publication Number Publication Date
KR880011363A true KR880011363A (ko) 1988-10-28
KR910007947B1 KR910007947B1 (ko) 1991-10-04

Family

ID=12845019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002359A KR910007947B1 (ko) 1987-03-06 1988-03-05 스퍼터링 타겟

Country Status (5)

Country Link
US (1) US4842706A (ko)
EP (1) EP0281141B2 (ko)
JP (1) JPS63216966A (ko)
KR (1) KR910007947B1 (ko)
DE (1) DE3854609T3 (ko)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
JPH06143581A (ja) * 1992-11-05 1994-05-24 Xerox Corp インクジェット印字ヘッド
JP2898515B2 (ja) * 1993-07-15 1999-06-02 株式会社ジャパンエナジー モザイクターゲット
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
JP2000104164A (ja) * 1998-06-29 2000-04-11 Toshiba Corp スパッタタ―ゲット
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
US6514358B1 (en) * 2000-04-05 2003-02-04 Heraeus, Inc. Stretching of magnetic materials to increase pass-through-flux (PTF)
US6585870B1 (en) * 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
US6863750B2 (en) * 2000-05-22 2005-03-08 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US6478895B1 (en) * 2001-04-25 2002-11-12 Praxair S.T. Technology, Inc. Nickel-titanium sputter target alloy
CN101042903B (zh) * 2002-02-25 2010-06-09 日矿金属株式会社 相变型存储器用溅射靶的制造方法
KR100568392B1 (ko) * 2002-06-24 2006-04-05 가부시키가이샤 코베루코 카겐 은 합금 스퍼터링 타겟 및 그의 제조 방법
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben
US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
JP5114812B2 (ja) 2006-03-07 2013-01-09 キャボット コーポレイション 変形させた金属部材の製造方法
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
JP6438906B2 (ja) * 2016-04-11 2018-12-19 ミネベアミツミ株式会社 角度調整装置及び照明装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145982A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
JPS59179783A (ja) * 1983-03-31 1984-10-12 Toshiba Corp スパツタリングタ−ゲツト
JPS59200761A (ja) * 1983-04-28 1984-11-14 Toshiba Corp スパツタリングタ−ゲツト支持装置
JPS59208073A (ja) * 1983-05-13 1984-11-26 Fujitsu Ltd スパツタリング用シリサイドタ−ゲツト
JPH0611029B2 (ja) * 1984-03-28 1994-02-09 株式会社日立製作所 スパツタタ−ゲツトおよびスパツタリング方法
JPS61116835A (ja) * 1984-11-13 1986-06-04 Shinku Yakin Kk Ｌｓｉ又は超ｌｓｉ電極配線材料用スパツタリングタ−ゲツト
JPH0796701B2 (ja) * 1984-12-12 1995-10-18 日立金属株式会社 スパッタ用ターゲットとその製造方法
JPS61145828A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd スパツタリングタ−ゲツトとその製造方法
JPS61145829A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd モザイク状スパツタリングタ−ゲツトとその製造方法
JPS61272371A (ja) * 1985-05-29 1986-12-02 O C C:Kk スパツタリングタ−ゲツト
JPH06104893B2 (ja) * 1985-10-16 1994-12-21 日立金属株式会社 スパッター用ターゲット部材およびその製造方法
JPH06104894B2 (ja) * 1985-10-16 1994-12-21 日立金属株式会社 スパッター用ターゲット部材およびその製造方法
JPH06104895B2 (ja) * 1986-02-12 1994-12-21 日立金属株式会社 タ−ゲツト部材
JPS63111172A (ja) * 1986-10-29 1988-05-16 Hitachi Metals Ltd タ−ゲツト材の製造方法
JPS63145771A (ja) * 1986-12-10 1988-06-17 Kasei Naoetsu:Kk スパツタリングタ−ゲツト

Also Published As

Publication number Publication date
US4842706A (en) 1989-06-27
JPS63216966A (ja) 1988-09-09
DE3854609T3 (de) 2000-11-23
DE3854609D1 (de) 1995-11-30
EP0281141A1 (en) 1988-09-07
KR910007947B1 (ko) 1991-10-04
DE3854609T2 (de) 1996-04-25
EP0281141B2 (en) 2000-06-28
EP0281141B1 (en) 1995-10-25
JPH0371510B2 (ko) 1991-11-13

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