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KR870700147A - Nonlinear and Bistable Optics - Google Patents

Nonlinear and Bistable Optics

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Publication number
KR870700147A
KR870700147A KR1019850700305A KR850700305A KR870700147A KR 870700147 A KR870700147 A KR 870700147A KR 1019850700305 A KR1019850700305 A KR 1019850700305A KR 850700305 A KR850700305 A KR 850700305A KR 870700147 A KR870700147 A KR 870700147A
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KR
South Korea
Prior art keywords
optics
bistable
nonlinear
photocurrent
responding
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Application number
KR1019850700305A
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Korean (ko)
Inventor
앤드류 바클레이 밀러 데이비드
Original Assignee
오레그 이. 엘버
아메리칸 텔리폰 앤드 텔레그라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 오레그 이. 엘버, 아메리칸 텔리폰 앤드 텔레그라프 캄파니 filed Critical 오레그 이. 엘버
Publication of KR870700147A publication Critical patent/KR870700147A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/3523Non-linear absorption changing by light, e.g. bleaching
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • G02F3/02Optical bistable devices
    • G02F3/028Optical bistable devices based on self electro-optic effect devices [SEED]

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

내용 없음.No content.

Description

비선형 및 쌍안정 광학장치Nonlinear and Bistable Optics

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명을 나타내는 측면도.5 is a side view showing the present invention.

Claims (26)

광전류를 발생하기 위한 광선에 응답하는 수단을 구비하는 광학 장치에 있어서; 반도체 양자 욀 영역을 갖는 구조와; 상기 광정류에서의 변화에 응답하여 변화하도록 상기 반도체 양자 욀 영역의 광학 흡수를 일으키기 위해서 상기 반도체 양자 욀 영역의 광학 흡수를 전기적으로 제어하기 위하여 상기 광전류에 응답하는 수단을 특징으로 하는 비선형 및 쌍안정 광학장치.An optical device comprising means for responding to light rays for generating a photocurrent; A structure having a semiconductor quantum fin region; Means for responding to the photocurrent to electrically control the optical absorption of the semiconductor quantum fin region to cause optical absorption of the semiconductor quantum fin region to change in response to the change in the light rectification. Optics. 제1항에 있어서, 광전류를 발생하기 위한 광선에 응답하는 수단이 상기 반도체 양자 욀 영역인 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the means for responding to light rays for generating a photocurrent is the semiconductor quantum fin region. 제1항에 있어서, 상기 광전류에 응답하는 수단이 저항기인 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the means for responding to the photocurrent is a resistor. 제1항에 있어서, 빈도체 양자 욀 영역을 갖는 구조는 하나의 반도체 양자 욀 층을 갖는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the structure having the frequency quantum fin region has one semiconductor quantum fin layer. 제1항에 있어서, 빈도체 양자 욀 영역을 갖는 구조는 다수의 반도체 양자 욀 층을 갖는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the structure having a frequency quantum fin region has a plurality of semiconductor quantum fin layers. 제1항에 있어서, 상기 광전류에 응답하는 수단은 실제적으로 상기 양자 욀 영역의 층면에 수직인 전압을 인가하는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.The nonlinear and bistable optics of claim 1, wherein the means for responding to the photocurrent applies a voltage that is substantially perpendicular to the layer plane of the quantum fin region. 제1항에 있어서, 상기 광전류에 응답하는 수단은 신제적으로 상기 양자 욀 영역의 층면에 평행한 전압을 인가하는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics according to claim 1, wherein the means for responding to the photocurrent newly applies a voltage parallel to the layer plane of the quantum fin region. 제1항에 있어서, 광선의 비임을 주사하기 위한 수단은 실제적으로 쌍기 양자 욀 영역의 층면에 수직인 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the means for scanning the beam of light rays is substantially perpendicular to the layer plane of the bilateral quantum fin region. 제1항에 있어서, 광선의 비임을 주사하기 위한 수단은 실제적으로 쌍기 양자 욀 영역의 층면에 평행한 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the means for scanning the beam of light rays is substantially parallel to the layer plane of the bilateral quantum fin region. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 전기적 전위원을 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. A nonlinear and bistable optics as recited in claim 1, wherein said means for responding to said photocurrent also includes an electrical precursor. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 반도체 양자 욀 영역을 갖는 구조의 통합부를 만드는 저항기를 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein the means for responding to the photocurrent also includes a resistor that makes an integral part of the structure having the semiconductor quantum fin region. 제1항에 있어서, 광학장치의 배열을 갖는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. A nonlinear and bistable optics as recited in claim 1, having an array of optics. 제1항에 있어서, 광학 장치의 2차원의 배열에서 각 광학장치는 상기 배열내의 다른 광학 장치의 각각의 독립적인 로직을 수행할 수 있는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The nonlinear and bistable optics of claim 1, wherein each optic in a two-dimensional array of optics is capable of performing independent logic of each of the other optics in the array. 제 1항에 있어서, 상기 광전류에 응답하는 수단은 또한 광 다이오드를 형성하는 반도체 영역을 포함하며, 반도체 양자 욀 영역을 갖는 구조의 통합부를 만드는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent also includes a semiconductor region that forms a photodiode and makes an integral part of the structure having the semiconductor quantum fin region. 제 1항에 있어서, 상기 광전류에 응답하는 수단은 또한 트랜지스터를 형성하는 반도체 영역을 포함하며, 반도체 양자 욀 영역을 갖는 구조의 통합부를 만드는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The non-linear and bistable optical device of claim 1, wherein the means for responding to the photocurrent also includes a semiconductor region forming a transistor, making an integral portion of the structure having a semiconductor quantum fin region. 제1항에 있어서, 반도체 양자 욀 영역을 갖는 상기 구조는 또한 p도우프된 반도체 층 및 n도와프된 반도체층을 포함하되, 거기에서 상기 양자 욀 영역은 상기 p도우프된 반도체층을 위하여 제1 면상에 전기적으로 부착되며, 상기 양자 욀 영역은 상기 n도우프된 반도체층을 위하여 제2 면상에 전기적으로 부착되는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.10. The structure of claim 1, wherein the structure having a semiconductor quantum fin region further comprises a p-doped semiconductor layer and an n-doped semiconductor layer, wherein the quantum fin region is formed for the p-doped semiconductor layer. Non-linear and bistable optics, wherein the quantum fin region is electrically attached on one surface and electrically attached on a second surface for the n-doped semiconductor layer. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 유도기를 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent also includes an inductor. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 일정한 전류원을 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent also includes a constant current source. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 트랜지스터를 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent also includes a transistor. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 광트랜지스터를 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent further comprises an optical transistor. 제1항에 있어서, 상기 광전류에 응답하는 수단은 또한 광다이오드를 구비하는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optics device of claim 1, wherein the means for responding to the photocurrent also includes a photodiode. 제1항에 있어서, 광전류를 발생하기 위한 광선에 응답하는 상기 수단내로 광선을 주사하기 위한 수단을 구비하되, 고아정류를 발생하기 위한 광선에 응답하는 상기 수단으로부터 광선이 나타나며 상기 반도체 양자 욀 영역으로 광선이 들어가는 것을 특징으로 하는 비선형 및 쌍안정 광학장치.2. The device of claim 1, further comprising means for scanning light rays into said means responsive to light rays for generating a photocurrent, wherein light rays appear from said means responsive to light rays for generating solid state rectification and into said semiconductor quantum fin region. Nonlinear and bistable optics, characterized in that light rays enter. 제1항에 있어서, 상기 반도체 양자 욀 영역내로 광선을 주사하기 위한 수단을 구비하되, 상기 반도체 양자 욀 영역으로부터 광선이 나타나며 광전류를 발생하기 위한 광선에 응답하는 상기 수단에 광선이 들어가는 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. A device according to claim 1, comprising means for scanning light rays into the semiconductor quantum fin region, wherein light rays appear in the semiconductor quantum fin region and the light rays enter the means responsive to the light rays for generating a photocurrent. Nonlinear and bistable optics. 제1항에 있어서, 광전류를 발생하기 위한 광선에 응답하는 상기수단은 광트랜지스터인 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optical device of claim 1, wherein said means for responding to light rays for generating a photocurrent is an optical transistor. 제1항에 있어서, 광전류를 발생하기 위한 광선에 응답하는 상기 장치는 광다이오드인 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optics device of claim 1, wherein said device responsive to light rays for generating a photocurrent is a photodiode. 제1항에 있어서, 광전류를 발생하기 위한 광선에 응답하는 상기 장치는 광전도체인 것을 특징으로 하는 비선형 및 쌍안정 광학 장치.2. The nonlinear and bistable optics device of claim 1, wherein the device responsive to light rays for generating a photocurrent is a photoconductor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850700305A 1985-03-18 1985-03-18 Nonlinear and Bistable Optics KR870700147A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000373 WO1986005598A1 (en) 1985-03-18 1985-03-18 Nonlinear and bistable optical device

Publications (1)

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KR870700147A true KR870700147A (en) 1987-03-14

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JP (1) JPS62502218A (en)
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761620A (en) * 1986-12-03 1988-08-02 American Telephone And Telegraph Company, At&T Bell Laboratories Optical reading of quantum well device
US4784476A (en) * 1987-01-27 1988-11-15 Hughes Aircraft Company Nipi refractive index modulation apparatus and method
FR2637092B1 (en) * 1988-05-11 1991-04-12 Thomson Csf ELECTROMAGNETIC WAVE MODULATOR WITH QUANTIC COUPLED WELLS AND APPLICATION TO AN ELECTROMAGNETIC WAVE DETECTOR
GB8813483D0 (en) * 1988-06-08 1988-07-13 Gen Electric Co Plc Spatial light modulators
EP1316838A1 (en) 2001-12-03 2003-06-04 Agilent Technologies, Inc. (a Delaware corporation) Semiconductor optical modulator

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DE3138212A1 (en) * 1981-09-25 1983-04-28 Kurt Dipl.-Phys. 4650 Gelsenkirchen Nattermann Electrooptical cell
US4518934A (en) * 1982-02-16 1985-05-21 At&T Bell Laboratories Optical bistable device

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JPS62502218A (en) 1987-08-27
EP0214984A1 (en) 1987-03-25
WO1986005598A1 (en) 1986-09-25

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Patent event date: 19851114

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