[go: up one dir, main page]

JPS566480A - Semiconductor light emitting diode - Google Patents

Semiconductor light emitting diode

Info

Publication number
JPS566480A
JPS566480A JP8096479A JP8096479A JPS566480A JP S566480 A JPS566480 A JP S566480A JP 8096479 A JP8096479 A JP 8096479A JP 8096479 A JP8096479 A JP 8096479A JP S566480 A JPS566480 A JP S566480A
Authority
JP
Japan
Prior art keywords
region
light emitting
layer
high resistance
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8096479A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Osamu Wada
Yorimitsu Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8096479A priority Critical patent/JPS566480A/en
Publication of JPS566480A publication Critical patent/JPS566480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To precisely control the size of a light emitting region in a semiconductor emitting diode and preferably dissipate heat therefrom by selectively forming different conducting type from a semiconductor layer therearound in the vicinity of an active layer or forming a buried layer having high resistance value thereat. CONSTITUTION:An N-type (or high resistance) InP (or InGaAsP) buried layer 5 is formed in the vicinity of an InGaAsP active layer 3. When a voltage is applied thereto, no current is flowed therethrough due is reverse bias (or high resistance) in the buried region 5, but a current is flowed only through a penetrating region 6. When forming a thin clad layer 4 under the region 6, the light emitting region may be equally formed to the shape of the region 6, and it is easy to precisely control it.
JP8096479A 1979-06-27 1979-06-27 Semiconductor light emitting diode Pending JPS566480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8096479A JPS566480A (en) 1979-06-27 1979-06-27 Semiconductor light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8096479A JPS566480A (en) 1979-06-27 1979-06-27 Semiconductor light emitting diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60103839A Division JPS6110285A (en) 1985-05-17 1985-05-17 Manufacturing method of semiconductor light emitting diode

Publications (1)

Publication Number Publication Date
JPS566480A true JPS566480A (en) 1981-01-23

Family

ID=13733190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8096479A Pending JPS566480A (en) 1979-06-27 1979-06-27 Semiconductor light emitting diode

Country Status (1)

Country Link
JP (1) JPS566480A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948598A (en) * 1982-09-13 1984-03-19 捉伸工事株式会社 Excavating method and device
US4667212A (en) * 1984-09-03 1987-05-19 Kabushiki Kaisha Toshiba Integrated optical and electric circuit device
US4814667A (en) * 1986-04-17 1989-03-21 Kabushiki Kaisha Toshiba Light emitting diode array having uniform illuminance distribution
JPH01170083A (en) * 1987-12-25 1989-07-05 Hitachi Cable Ltd Semiconductor laser
US4967241A (en) * 1985-03-26 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5477063A (en) * 1993-06-17 1995-12-19 Rohm Co., Ltd. Semiconductor light emitting device with Group II-IV and III-V semiconductors

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948598A (en) * 1982-09-13 1984-03-19 捉伸工事株式会社 Excavating method and device
US4667212A (en) * 1984-09-03 1987-05-19 Kabushiki Kaisha Toshiba Integrated optical and electric circuit device
US4967241A (en) * 1985-03-26 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US4814667A (en) * 1986-04-17 1989-03-21 Kabushiki Kaisha Toshiba Light emitting diode array having uniform illuminance distribution
JPH01170083A (en) * 1987-12-25 1989-07-05 Hitachi Cable Ltd Semiconductor laser
US5477063A (en) * 1993-06-17 1995-12-19 Rohm Co., Ltd. Semiconductor light emitting device with Group II-IV and III-V semiconductors

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS566480A (en) Semiconductor light emitting diode
JPS56142691A (en) Semiconductor light emitting device
JPS57139981A (en) Semiconductor light emitting device
JPS5591892A (en) Semiconductor laser light emission device
JPS56112777A (en) Semiconductor light emitting device
JPS5643794A (en) Semiconductor laser
KR900011085A (en) InP / GaInAsp Laser Diode and Manufacturing Method Thereof
JPS572590A (en) Inp-ingaasp semiconductor light emitting device and manufacture thereof
JPS57113242A (en) Marking device for semiconductor wafer
JPS6476784A (en) Edge light-emitting diode
JPS537187A (en) Production of semiconductor laser device
JPS5732692A (en) Semiconductor laser device
JPS5398790A (en) Semiconductor light emitting element
JPS54102993A (en) Optical semiconductor device
JPS5638885A (en) Light emission semiconductor device
JPS6413775A (en) Semiconductor light-emitting element
JPS5598873A (en) Temperature compensated type constant-voltage diode
JPS5425184A (en) Light emitting element of semiconductor
JPS55103778A (en) Light-emitting diode
JPS5285490A (en) Semiconductor light emitting element
JPS5676582A (en) Semiconductor device
KR880013277A (en) Semiconductor laser device having a current blocking layer engraved on a P-type substrate
JPS5315791A (en) Semiconductor controlled light emitting device