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JPS54102993A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS54102993A
JPS54102993A JP1021278A JP1021278A JPS54102993A JP S54102993 A JPS54102993 A JP S54102993A JP 1021278 A JP1021278 A JP 1021278A JP 1021278 A JP1021278 A JP 1021278A JP S54102993 A JPS54102993 A JP S54102993A
Authority
JP
Japan
Prior art keywords
semiconductor device
width
ned
junction
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1021278A
Other languages
Japanese (ja)
Other versions
JPS6226194B2 (en
Inventor
Masahiro Yamane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1021278A priority Critical patent/JPS54102993A/en
Publication of JPS54102993A publication Critical patent/JPS54102993A/en
Publication of JPS6226194B2 publication Critical patent/JPS6226194B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a semiconductor device featuring a high optical sensitivity by providing both the deep and shallow parts to the emitter layer and furthermore specifying the structure at the PN junction part for the optical semiconductor device of the transistor or the like.
CONSTITUTION: For the semiconductor device of the photo transistor, the optical thyristor and the like, deep part JID of more than 5000Å and shallow part JIS of under 5000Å are provided to PN junction which functions as the emitter junction. No cathode 1 is provided on thin part NES of the emitter layer, and cathode 1a is provided only on the surface of thick part NED. At the same time, electrode 1a is formed oblong along with part NED with width C of 1a set smaller than width D of part NED to be enclosed by part NEs. And the ratio between width E of part NES and width D is set to 1/3∼1. Thus, the ON-current can be increased enough, and accordingly a large amount of current can be given the direct switching control with a small amount of light volume.
COPYRIGHT: (C)1979,JPO&Japio
JP1021278A 1978-01-31 1978-01-31 Optical semiconductor device Granted JPS54102993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1021278A JPS54102993A (en) 1978-01-31 1978-01-31 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1021278A JPS54102993A (en) 1978-01-31 1978-01-31 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS54102993A true JPS54102993A (en) 1979-08-13
JPS6226194B2 JPS6226194B2 (en) 1987-06-08

Family

ID=11743949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1021278A Granted JPS54102993A (en) 1978-01-31 1978-01-31 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS54102993A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651883A (en) * 1979-10-05 1981-05-09 Nec Corp Light receiving diode
JPS5823477A (en) * 1981-08-05 1983-02-12 Nec Corp Photosensitive silicon planar thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651883A (en) * 1979-10-05 1981-05-09 Nec Corp Light receiving diode
JPS5823477A (en) * 1981-08-05 1983-02-12 Nec Corp Photosensitive silicon planar thyristor

Also Published As

Publication number Publication date
JPS6226194B2 (en) 1987-06-08

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