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KR870005477A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR870005477A
KR870005477A KR860009364A KR860009364A KR870005477A KR 870005477 A KR870005477 A KR 870005477A KR 860009364 A KR860009364 A KR 860009364A KR 860009364 A KR860009364 A KR 860009364A KR 870005477 A KR870005477 A KR 870005477A
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KR
South Korea
Prior art keywords
type
semiconductor
layer
semiconductor device
electrode
Prior art date
Application number
KR860009364A
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English (en)
Inventor
히데오 야마기시
마사다가 곤도오
구니오 니시무라
아기히고 히로에
게이 죠오 아사오까
가즈 노리 쓰게
요시히사 다와다
미노리 야마구찌
Original Assignee
니이노 마비도
가네가후찌 가가꾸 고오교오 가부시끼 가이샤
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27309089&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR870005477(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP60247463A external-priority patent/JPS62106670A/ja
Priority claimed from JP60255681A external-priority patent/JP2545066B2/ja
Priority claimed from JP61099939A external-priority patent/JPS62256481A/ja
Application filed by 니이노 마비도, 가네가후찌 가가꾸 고오교오 가부시끼 가이샤 filed Critical 니이노 마비도
Publication of KR870005477A publication Critical patent/KR870005477A/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1양태를 나타낸 것으로 핀-형 반도체층으로 이루어진 반도체 장치의 개요도이며,
제2도는 본 발명의 제 양태를 나타낸 것으로 닙-형 반도체 층으로 이루어진 반도체 장치의 개요도이며,
제3도는 본 발명의 제2양태를 나타낸 반도체 장치의 설명도이다.

Claims (22)

  1. 중간층에 이웃하는 반도체보다 전기 저항이 큰 절연체나 반도체도 만들어진 최소한 하나의 중간층이 반도체층 사이나 반도체와 전극 사이에 들어감을 특징으로 하는 핀-형 또는 닙-형 무정질-함유 반도체층 그리고 최소한 2개의 전극으로 구성된 반도체 장치.
  2. 제1항에 있어서, 중간층이 p-형 반도체와 i-형 반도체의 사이 및/또는 n-형 반도체와 i-형 반도체의 사이 형성된 반도체 장치.
  3. 제1항에 있어서, 중간층이 한 전도형의 반도체와 전극 사이에 형성된 반도체 장치.
  4. 제1항에 있어서, 중간층이 Si1-xC:X:Y, Si1-xNx:X:Y 및 Si1-xO:X:Y(여기서 x는 0〈X〈1의 관계를 만족하는 수이며, X는 H,Cl,F 또 Br이고, Y는 H,Cl,F 또는 Br임)로 이루어진 그룹에서 선택된 층인 반도체 장치.
  5. 제1항에 있어서, 중간층이 Si1-xCx:H(여기저 X는 0〈X〈1의 관계를 만족하는 수임)인 반도체 장치.
  6. 제1항에 있어서, 최소한 하나의 중간층이 p-형 무정질-함유 반도체층에 인접하여 형성된 반도체 장치.
  7. 제1항에 있어서, 중간층이 p-형과 i-형 무정질-함유 반도체층 사이에 형성된 반도체 장치.
  8. 제1항 내지 7항중의 어느 하나에 있어서, 중간층의 두께가 10 내지 500Å인 반도체 장치.
  9. p-형 또는 n-형 층의 도판트의 양이 p/i 또는 n/i 접합면에서 최소이고 p/전극 또는 n/전극의 상호면을 향해 점진적으로 증가함을 특징으로 하는 핀-형 또는 닙-형 무정질-함유 반도체층 그리고 최소한 2개의 전극으로 구성된 반도체 장치.
  10. 제9항에 있어서, p-형 층과 n-형 층의 최소한 하나가 a-SiC:H층인 반도체 장치.
  11. 제9항에 있어서, p-형 층과 n-형 층의 최소한 하나가 a-Si:H층인 반도체 장치.
  12. 제9항에 있어서, p-형 또는 n-형 부위의 도판트의 양이 p/i 또는 n/i 접합면으로 부터 최소한 20Å의 두께도 p/ 전극 또는 n/전극의 상호면을 향해 점진적으로 증가해 가는 반도체 장치.
  13. 제9항에 있어서, p-형 또는 n-형 부위의 도판트의 양이 p/i 또는 n/i 접합면으로 부터 최소한 100Å의 두께로 p/전극 또는 n/전극의 상호면을 향해 점진적으로 증가해가는 반도체 장치.
  14. 제9항 내지 11항중의 어느 하나에 있어서, p-형층의 도판트가 B,Al,Ga,In 및 T1로 이루어진 그룹에서 선택된 한 원소인 반도체 장치.
  15. 제9항 내지 11항중의 어느 하나에 있어서, n-형 층의 도판트가 N,P,As,Sb,Te 및 PO로 이루어진 그룹에서 선택된 한 원소인 반도체 장치.
  16. 인접한 반도체(Ⅱ)와 전도형이 동일하고 불순물 밀도가 높은 최소한 하나의 반도체층(I)이 반도체(Ⅱ)과 전극 사이에 들어감을 특징으로 하는, 닙-형 또는 핀-형 무정질-함유 반도체층과 최소한 두개의 전극으로 구성된 반도체 장치.
  17. 제16항에 있어서, 전도형이 p-형 및/또는 n-형인 반도체 장치.
  18. 제17항에 있어서, 반도체 층(I)의 두께가 10 내지 300Å인 반도체 장치.
  19. 제15항에 있어서, p-형 및/또는 n-형 반도체층(I)이 a-SiC:H로 이루어진 반도체 장치.
  20. 제17항 내지 19항중의 어느 하나에 있어서, p-형 및/또는 n-형 반도체층(I)이 a-Si로 이루어진 반도체 장치.
  21. 제17항 내지 19항중의 어느 하나에 있어서, 불순물 밀도가 높은 p-형 또는 n-형 반도체층(I)의 불순물 밀도가 반도체층(Ⅱ)의 것보다 2배 이상인 반도체 장치.
  22. 제17항 내지 19항중의 어느 하나에 있어서, 불순물 밀도가 높은 반도체층(I)의 불순물 밀도가 반도체층(Ⅱ)의 것보다 4배 이상인 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR860009364A 1985-11-05 1986-11-05 반도체 장치 KR870005477A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP247463 1985-11-05
JP60247463A JPS62106670A (ja) 1985-11-05 1985-11-05 半導体素子
JP60255681A JP2545066B2 (ja) 1985-11-14 1985-11-14 半導体装置
JP255681 1985-11-14
JP61099939A JPS62256481A (ja) 1986-04-30 1986-04-30 半導体装置
JP99939 1986-04-30

Publications (1)

Publication Number Publication Date
KR870005477A true KR870005477A (ko) 1987-06-09

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Application Number Title Priority Date Filing Date
KR860009364A KR870005477A (ko) 1985-11-05 1986-11-05 반도체 장치

Country Status (7)

Country Link
US (1) US5032884A (ko)
EP (3) EP0494090A3 (ko)
KR (1) KR870005477A (ko)
CN (1) CN1036817C (ko)
AU (2) AU600453B2 (ko)
CA (1) CA1321660C (ko)
DE (2) DE3650712T2 (ko)

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AU600453B2 (en) 1990-08-16
DE3650712T2 (de) 1999-09-30
AU6596690A (en) 1991-01-24
CA1321660C (en) 1993-08-24
DE3650712D1 (de) 1999-04-01
EP0494088A1 (en) 1992-07-08
EP0221523B1 (en) 1994-08-03
AU6461986A (en) 1987-05-07
EP0494088B1 (en) 1999-02-24
DE3650012D1 (de) 1994-09-08
AU636677B2 (en) 1993-05-06
EP0221523A3 (en) 1989-07-26
EP0494090A2 (en) 1992-07-08
DE3650012T2 (de) 1994-11-24
EP0221523A2 (en) 1987-05-13
CN86106353A (zh) 1987-12-02
US5032884A (en) 1991-07-16
CN1036817C (zh) 1997-12-24
EP0494090A3 (en) 1992-08-05

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