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KR860004464A - 반도체박막의 형성방법 - Google Patents

반도체박막의 형성방법

Info

Publication number
KR860004464A
KR860004464A KR1019850008266A KR850008266A KR860004464A KR 860004464 A KR860004464 A KR 860004464A KR 1019850008266 A KR1019850008266 A KR 1019850008266A KR 850008266 A KR850008266 A KR 850008266A KR 860004464 A KR860004464 A KR 860004464A
Authority
KR
South Korea
Prior art keywords
forming
thin film
semiconductor thin
semiconductor
film
Prior art date
Application number
KR1019850008266A
Other languages
English (en)
Other versions
KR930010093B1 (ko
Inventor
다까시 노구찌
다께후미 오오시마
히사오 하야시
Original Assignee
쏘니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쏘니 가부시기가이샤 filed Critical 쏘니 가부시기가이샤
Publication of KR860004464A publication Critical patent/KR860004464A/ko
Application granted granted Critical
Publication of KR930010093B1 publication Critical patent/KR930010093B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019850008266A 1984-11-30 1985-11-06 반도체박막의 형성방법 KR930010093B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP252882 1984-11-30
JP59252882A JPH0817157B2 (ja) 1984-11-30 1984-11-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
KR860004464A true KR860004464A (ko) 1986-06-23
KR930010093B1 KR930010093B1 (ko) 1993-10-14

Family

ID=17243471

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008266A KR930010093B1 (ko) 1984-11-30 1985-11-06 반도체박막의 형성방법

Country Status (2)

Country Link
JP (1) JPH0817157B2 (ko)
KR (1) KR930010093B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567273B1 (ko) * 1998-08-27 2006-05-25 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2699347B2 (ja) * 1987-04-14 1998-01-19 ソニー株式会社 半導体基板の製造方法
JP2741385B2 (ja) * 1988-09-27 1998-04-15 日立建機株式会社 シリコン薄膜ピエゾ抵抗素子の製造法
KR100269289B1 (ko) * 1997-02-19 2000-10-16 윤종용 실리콘막의결정화방법
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
CN113745099A (zh) * 2021-09-06 2021-12-03 长江存储科技有限责任公司 多晶硅层、其制作方法以及半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680126A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Formation of monocrystalline semiconductor
JPS57159013A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor thin film
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0611035B2 (ja) * 1983-04-15 1994-02-09 ソニー株式会社 薄膜の加熱方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100567273B1 (ko) * 1998-08-27 2006-05-25 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
JPH0817157B2 (ja) 1996-02-21
JPS61131413A (ja) 1986-06-19
KR930010093B1 (ko) 1993-10-14

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