KR20180137536A - Methods and coaters for coating substrates - Google Patents

Abstract

There is provided a method for coating a substrate 100 using at least one cathode assembly 10 having three or more rotatable targets 20, wherein three or more rotatable targets , And a magnet assembly (25) positioned therein. The method includes providing a plurality of different angular positions relative to a plane (22) extending vertically from the substrate (100) to the axis (21) of each rotatable target of three or more rotatable targets (20) Rotating the magnet assemblies (25); And the power provided to three or more rotatable targets 20, the residence time of the magnet assemblies 25, and the continuously changing magnet assemblies 25, depending on the function stored in the database or memory. And varying at least one of the angular velocities.

Description

Method and coater for coating a substrate

[0001] The present application relates to a method and a coater for coating a substrate, and more particularly, to a method for sputtering a layer on a substrate with high uniformity and a coater for carrying out the method.

[0002] Formation of a layer on a substrate with high uniformity (i.e., uniform thickness and electrical properties across the extended surface) is a major concern in many technical fields. For example, in the field of thin film transistors (TFT), thickness uniformity and uniformity of electrical characteristics can be a major concern in reliably fabricating display channel regions. In addition, typically, a uniform layer enables manufacturing reproducibility.

[0003] One method for forming a layer on a substrate is sputtering, and sputtering has been developed as a very beneficial method in the fabrication of a variety of manufacturing fields, such as TFTs. During sputtering, atoms are removed from the target material by the impact of the target material with energetic particles (e.g., energized ions of inert or reactive gases). The ejected atoms can be deposited on the substrate, and thus a layer of sputtered material can be formed.

[0004] However, forming a layer by sputtering may have high uniformity specifications, for example due to the geometry of the substrate and / or the target. In particular, uniform layers and ion bombardment of the sputtered material over vast substrates may be difficult to achieve due to the irregular spatial distribution of the sputtered material and ion bombardment. Providing multiple targets across a substrate can improve layer uniformity.

[0005] In view of the foregoing, new methods and coaters for coating substrates that overcome at least some of the problems of the art are beneficial.

[0006] In view of the above, a method and a coater for coating a substrate are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0007] According to one aspect, there is provided a method for coating a substrate using at least one cathode assembly having three or more rotatable targets, wherein three or more rotatable targets each have a magnet Assembly. The method includes rotating magnet assemblies from a substrate at a plurality of different angular positions relative to a plane extending vertically to an axis of each rotatable target of three or more rotatable targets; And varying at least one of the power provided to the three or more rotatable targets, the residence time of the magnet assemblies, and the angular velocity of the magnet assemblies that change continuously, depending on the function stored in the database or memory .

[0008] According to a further aspect, there is provided a coater for performing a method for coating a substrate.

[0009] Additional aspects, details, advantages, and features are apparent from the dependent claims, the description, and the accompanying drawings.

[0010] Embodiments also relate to apparatus for performing the disclosed methods and apparatus parts for performing each of the described method aspects. These methodological aspects may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present disclosure also relate to methods for operating the described apparatus. The methods for operating the described device include aspects of the method for performing the functions of the device.

[0011] In the manner in which the recited features of the present disclosure can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings relate to embodiments of the present disclosure and are described below.
Figure 1 shows a schematic cross-sectional view of a coater illustrating a method for coating a substrate, in accordance with embodiments described herein.
Figure 2 shows a schematic cross-sectional view of a coater, illustrating a method for coating a substrate, in accordance with embodiments described herein.
Figures 3a and 3b show schematic cross-sectional views of a coater illustrating a method for coating a substrate, in accordance with embodiments described herein.
Figure 4 shows a schematic cross-sectional view of a coater illustrating a method for coating a substrate, in accordance with embodiments described herein.
5 illustrates a variation of power according to a function, in accordance with the embodiments described herein.
Figure 6 illustrates a continuous change of angular velocity according to a function, in accordance with the embodiments described herein.
Figure 7 illustrates an additional change in power according to a function, in accordance with the embodiments described herein.
Figure 8 illustrates an additional change in power according to a function, and a change in residence time according to a function, in accordance with the embodiments described herein, in accordance with the embodiments described herein.
Figure 9 shows a schematic cross-sectional view of three or more rotatable targets positioned to coat a substrate, in accordance with the embodiments described herein.
10A and 10B illustrate a comparison of the thickness of a film deposited by a conventional process with the thickness of a film deposited by the processes described herein.
Figs. 11A and 11B show a comparison of the electrical properties of the films deposited by the conventional processes and the films deposited by the processes described herein.

[0012] Reference will now be made in detail to various embodiments of the present disclosure, and one or more examples of various embodiments thereof are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. Typically, only the differences for the individual embodiments are described. Each example is provided as an illustration of the present disclosure and is not intended as a limitation of the present disclosure. Additionally, features illustrated or described as part of one embodiment may be used with other embodiments or for other embodiments to produce further embodiments. It is intended that the description include such modifications and variations.

[0013] Sputtering can be initiated as diode sputtering or magnetron sputtering. Magnetron sputtering is particularly advantageous in that the deposition rates are high. Typically, the magnet is positioned within the rotatable target. Typically, the rotatable target as used herein is a rotatable curvature target. By arranging the magnets or magnets in the rear of the target, that is to say in the case of the rotatable target, by arranging the magnets or magnets inside the target, in order to capture the free electrons in the generated magnetic field generated just below the target surface, And escape is not possible. This typically improves the probability of ionizing gas molecules by several orders of magnitude. This, in turn, significantly increases the deposition rate.

[0014] The term " magnet assembly " as used herein is a unit capable of generating a magnetic field. Typically, the magnet assembly includes a permanent magnet. Specifically, the magnet assembly may be constituted by a permanent magnet. Typically, the permanent magnets are arranged in a rotatable target such that free electrons are trapped within a magnetic field generated below the rotatable target surface. In many embodiments, the magnet assembly includes a magnet yoke. According to one aspect, the magnet assembly may be movable within the rotatable tube. By rotating the magnet assembly along the axis of the rotatable tube by moving the magnet assembly, and more specifically as the center of rotation, the sputtered material can be oriented in different directions.

[0015] The substrate may be continuously moved during coating (" dynamic coating "), or the substrate to be coated may be stationary during coating (" static coating "). According to embodiments described herein, methods provide a static deposition process. Typically, static deposition and dynamic deposition can be distinguished, especially in the case of large area substrate processing, such as the processing of vertically oriented large area substrates. An in-line process in which the substrate is moving continuously or sub-continuously near the deposition source can be stabilized before the substrates are moved into the deposition zone, and then the substrate can be stabilized It will be easier because of the fact that it can be maintained. However, dynamic deposition may have other disadvantages, such as particle generation. This is particularly applicable for TFT backplane deposition. According to the embodiments described herein, static sputtering can be provided, for example, for TFT processing, wherein the plasma can be stabilized before deposition onto a pristine substrate. It should be noted that the term different static deposition process as compared to dynamic deposition processes does not exclude any movement of the substrate, as will be appreciated by those skilled in the art. The static deposition process may include, for example, a static substrate position during deposition, a vibrating substrate position during deposition, a substantially constant average substrate position during deposition, a dithering substrate position during deposition, a wobbling substrate position during deposition, , A deposition process in which cathodes are provided in one chamber, that is, a chamber is provided with a predetermined set of cathodes, during deposition of the layer, the deposition chamber closes the valve units separating the chambers from the adjacent chambers, A substrate position having a sealed atmosphere relative to the substrate, or a combination thereof. Thus, the static deposition process can be understood as a deposition process with a static position, a deposition process with a substantially static position, or a deposition process with a partially static position of the substrate. Thus, the static deposition process as described herein can be clearly distinguished from the dynamic deposition process, while the substrate position for the static deposition process is not moved at all during deposition.

[0016] The terms "vertical direction" or "vertical orientation" may be understood to distinguish from "horizontal direction" That is, "vertical direction" or "vertical orientation" may relate, for example, to a substantially vertical orientation of the carrier and substrate, wherein the degree from a precise vertical or vertical orientation, Deviations of +/- 15 [deg.] May still be considered as "substantial vertical direction" or "substantial vertical orientation ". The vertical direction may be substantially parallel to gravity.

[0017] According to the embodiments described herein, which may be combined with other embodiments described herein, a substantial vertical may be +/- 20 degrees or less from a vertical direction, such as, for example, 0.0 > +/- 10 < / RTI > or less. This deviation can be provided, for example, because a substrate support having slight deviation from the vertical orientation can generate a more stable substrate position. However, the substrate orientation during deposition of the organic material can be considered to be substantially vertical, which can be considered to be different from the horizontal substrate orientation.

[0018] The term " substantially vertical " may relate, for example, to a rotational axis and a substantially perpendicular orientation of the support surface or substrate surface, wherein the number from the correct vertical orientation, Deviations of up to +/- 15 [deg.] May still be considered " substantially vertical ".

[0019] The examples described herein can be utilized for depositing on large area substrates, for example, for lithium battery manufacturing or for electrochromic windows. As an example, a plurality of thin film batteries may be formed on a large area substrate, using a cooling device, to process a layer comprising a material having a low melting temperature. According to some examples, the large area substrate has GEN 4.5 corresponding to about 0.67 m ² substrates (0.73 x 0.92 m), GEN 5 corresponding to about 1.4 m ² substrates (1.1 m x 1.3 m), about 4.29 m ² Corresponding to GEN 7.5 corresponding to substrates (1.95 mx 2.2 m), GEN 8 corresponding to about 5.3 m ² substrates (2.16 mx 2.46 m), or even to about 9.0 m ² substrates (2.88 mx 3.13 m) GEN 10. Larger generations such as GEN 11, GEN 12, and the like and corresponding substrate areas can similarly be implemented.

[0020] The term "substrate" as used herein in particular will encompass non-rigid substrates, such as glass plates. The present disclosure is not so limited, and the term "substrate" may also encompass flexible substrates such as webs or foils.

[0021] Sputtering can be used in the production of displays. In more detail, sputtering can be used for metallization, such as the generation of electrodes or busses. Sputtering is also used for the production of thin film transistors (TFTs). Sputtering can also be used for the production of an indium tin oxide (ITO) layer.

[0022] Sputtering can also be used in the production of thin film solar cells. Thin film solar cells include a backside contact, an absorber layer, and a transparent and conductive oxide layer (TCO). Typically, the back contact and TCO layer are produced by sputtering, while the absorber layer is typically fabricated in a chemical vapor deposition process.

[0023] In the context of the present application, the terms " coating ", " deposition ", and " sputtering "

[0024] According to embodiments described herein, a method for coating a substrate is provided. The method can be performed by a coater. The coater includes at least one cathode assembly having three or more rotatable targets. Three or more rotatable targets, specifically three or more rotatable targets, each include an internally positioned magnet assembly. Typically, the magnet assemblies have a plurality of different angles < RTI ID = 0.0 > < / RTI > for a plane extending vertically from the substrate to the axis of each rotatable target of three or more rotatable targets, Position. Specifically, for each of a plurality of different respective positions, the magnet assemblies have an angle with respect to a plane extending perpendicularly to the axis of each rotatable target of three or more rotatable targets from the substrate. Typically, three or more rotatable targets may each be a cylindrical sputter cathode rotatable about an axis of rotation.

[0025] According to aspects of the present disclosure, at least one of the power provided to three or more rotatable targets, the residence time of the magnet assemblies, and the angular velocity of the magnet assemblies, which are continuously varied, are varied, depending on the function . That is, unequal power is provided to three or more rotatable targets, and / or different residence times are used, and / or a continuously varying angular velocity of the magnet assemblies is used. Typically, the sputter power, residence time, and / or angular velocity are varied according to the magnet assembly position. In particular, the sputter power generally corresponds directly to the power applied to the rotatable target. Except for values close to 0 V, the relationship between the applied voltage and the sputter power is linear in the first approximation. Thus, a description of the change in power provided for three or more rotatable targets 20 can be understood as a change in the voltage provided to three or more rotatable targets 20, The reverse is also true. Specifically, in practice, the sputter power can be varied, which can result in a change in the power applied to three or more rotatable targets. Typically, the voltage can be varied in the range of -200 V to -800 V, specifically in the range of -300 V to -550 V. In addition, it is also possible to vary the current provided to three or more rotatable targets. Thus, a description of the variation in power provided for three or more rotatable targets 20 may be provided by varying the voltage provided to three or more rotatable targets 20, and / or three Or more of the current supplied to the rotatable targets 20, and vice versa.

[0026] In accordance with the embodiments described herein, varying the residence time of the magnet assemblies at each of the respective positions is performed according to a discontinuous function, and / or varying the angular velocity of the magnet assemblies at each of the respective positions It is performed according to a continuous function.

[0027] In accordance with the embodiments described herein, at least one of a change in power provided to three or more rotatable targets, a change in residence time of the magnet assemblies, and a continuous change in angular velocity of the magnet assemblies The function is read from the database or memory. Then, a change in at least one of the power provided to the three or more rotatable targets, the residence time of the magnet assemblies, and the angular velocity of the magnet assemblies that change or change continuously is performed according to a function. Specifically, a function may be predetermined, e.g., for a particular process, and read from the database or memory before the particular process is performed. For example, different functions for different thicknesses of the layer to be sputtered can be stored.

[0028] That is, the function is stored in memory and the change is performed according to the function. Typically, the function may be a function that is dependent on each position, i.e., the function may include different values for each of the different positions. According to embodiments, the amount of material sputtered on the substrate at each position can be determined by a function. That is, by including values that are dependent on each position, it may be possible to sputter a layer having a high uniformity on a substrate when implementing the embodiments. Typically, the function may be predetermined based on a number of trails.

[0029] Typically, either the power provided to three or more rotatable targets, and the continuously varying angular velocity of the magnet assemblies and the residence time of the magnet assemblies are varied according to function. In particular, the residence time of the magnet assemblies may vary according to the discontinuous function and / or the angular speed of the magnet assemblies may vary according to the continuous function. That is, the power provided to three or more rotatable targets and the residence time of the magnet assemblies may vary depending on the function, or the power supplied to three or more rotatable targets and the continuously varying, The angular speeds of the magnet assemblies vary with function.

[0030] In the context of the present application, a continuous change in each speed can be distinguished from a non-continuous change in each speed, such as a gradual change in angular speed from zero to a specific value and vice versa.

[0031] In the case of implementing the embodiments, the formation of layers with high quality on the substrate can be made possible. In particular, the thickness of the deposited layer on the substrate can be highly uniform across the entire substrate. In addition, high homogeneity of the layer can be made (e.g., with respect to properties such as structure, resistivity, and / or layer stress of the grown crystal). For example, embodiments may be advantageous in forming metallization layers in the production of TFTs (e.g., for the manufacture of TFT-LCD displays), where the signal delay depends on the thickness of the layer, , The thickness non-uniformity can cause the pixels to be energized at slightly different points in time. Moreover, the embodiments may in fact be advantageous in forming subsequently etched layers, since the uniformity of the layer thickness makes it possible to achieve the same results at different positions of the formed layer.

[0032] In the context of the present application, three or more rotatable targets may each be a cylindrical sputter cathode rotatable about an axis of rotation.

[0033] According to embodiments, the coating system includes a vacuum chamber in which a sputtering process is performed. The term " vacuum " in the present application refers to a pressure of less than 10 ^-2 mbar (such as, but not limited to, about 10 ^-2 mbar, in which case the processing gas may flow in the vacuum chamber) , Or more specifically less than 10 ^-3 mbar (such as, but not limited to, about 10 ^-5 mbar, in which case no processing gas may flow in the vacuum chamber) Quot; The coating system may form a process module that forms part of the manufacturing system. For example, the coating system may be a system for manufacturing a TFT, or more specifically a system for manufacturing a TFT-LCD, such as an AKT-PiVot PVD system (Applied Materials of Santa Clara, Calif.), Lt; / RTI >

[0034] Figure 1 schematically illustrates a substrate 100 that is positioned on a substrate holder 110. The rotatable target 20 of the cathode assembly 10 may be positioned over the substrate 100. [ A negative potential can be applied to the rotatable target 20. The magnet assembly 25 is shown schematically as being located within the rotatable target 20. [ In many embodiments, an anode (not shown in FIG. 1), to which a positive potential can be applied, may be positioned near the rotatable target 20. Such an anode may have the shape of a bar, and typically the axis of the bar is arranged parallel to the axis of the angular tube. In other embodiments, a separate bias voltage may be applied to the substrate. As used herein, " positioning the magnet assembly " can be understood as operating the cotter with the magnet assembly positioned at a certain constant position. In Figure 1, only one rotatable target 20 of three or more rotatable targets 20 is shown. However, for two or more of the three or more rotatable targets 20, the same principles can be applied.

[0035] A typical permanent magnet as used in the embodiments described herein has a first magnet with a first magnetic pole, and a pair of second magnets with a second magnetic pole. These poles each refer to the surface of the magnet assembly. Typically, the surfaces face the rotatable target from the inside.

[0036] According to embodiments described herein, the magnet assembly has a first magnetic pole in the direction of the first plasma race track and a second magnetic pole in the direction of the second plasma race track. The first stimulus may be a progeny pole, and the second stimulus may be a magnetic pole. In other embodiments, the first stimulus may be a magnetic north pole, and the second magnetic pole may be a magnetic north pole. The pair of second magnets may comprise a plurality of pairs of second magnetic poles (e.g., south poles or north poles) in the direction of the first plasma race track and first magnetic poles in the direction of the second plasma race track Lt; / RTI >

[0037] Thus, three magnets, each of which may consist of one or more sub-magnets, can form two magnetrons, one magnetron forming a first plasma race track, one magnetron forming a second plasma Form a race track. The first plasma race track and the second plasma race track may each have a main direction in which material is ejected from the target upon impact of ions of the plasma. Thus, the magnet assembly 25 may include a main direction of material discharge, which may be an overlap of the primary directions of the first plasma race track and the second plasma race track.

[0038] 1, an enlarged view of a magnet assembly 25 illustrating an exemplary situation as described herein is shown. As shown, the south poles are positioned in the middle, while the north poles surround the south poles.

[0039] The surface of the substrate may define a horizontally arranged plane in the figures shown. In the context of the present application, the angle of the magnet assemblies is defined relative to a plane that extends perpendicularly from the substrate 100 to the axis of the rotatable target 20. In the embodiments described herein, this plane may also be perpendicular to the substrate holder. In the context of the present application, this plane can be referred to as " substrate-target interconnect plane ". In Figures 1, 3A, and 3B, this plane is illustratively shown as vertically arranged dashed line with reference numeral 22.

[0040] The embodiments illustrated in the figures illustrate that the rotatable target 20 is arranged on a horizontally arranged substrate 100 and the definition of the substrate-target interconnect plane for these embodiments is illustratively illustrated , But other orientations are also possible. In particular, the orientation of the substrate may also be vertical, as described herein. In particular, considering the large area coating, transport and handling of the substrate can be simplified and facilitated when the substrate is oriented vertically. In other embodiments, it is even possible to arrange the substrate in any orientation between the horizontal and vertical orientations.

[0041] In accordance with the embodiments described herein, the magnet assemblies 25 can be rotated at a plurality of different angular positions, at which magnet assemblies 25 are mounted on the plane 22 With its plane 22 extending vertically from the substrate 100 to the axis 21 of each of the three or more rotatable targets. The angle of each position may be equal to or greater than -60 degrees, specifically equal to or greater than -40 degrees, and typically equal to or greater than -15 degrees , And / or may be equal to or less than 60 °, specifically less than or equal to 40 °, and typically less than or equal to 15 °.

[0042] Additionally, the magnet assemblies 25 may have a starting angle or reference angle, and the magnet assemblies 25 are rotated from their starting angle or reference angle to a first angular position among a plurality of different angular positions. The starting angle may be non-zero relative to the plane 22, such as +/- 5 ° to +/- 15 °, and the plane 22 may be three or more from the substrate 100, Of each of the rotatable targets 20 of each of the plurality of rotatable targets. Additionally, the ranges specified herein for each position may be for a starting angle. That is, each position may be measured with respect to a starting angle that may be zero or non-zero with respect to plane 22, and that plane 22 may be measured from the substrate 100 to three or more rotatable targets 20 extend perpendicularly to their respective axes 21.

[0043] Typically, the rotatable targets 20 have the shape of a cylinder. To specify the position of each of the elements, such as the magnet assembly within the cylinder, cylindrical coordinates may be used. Concretely, if one is interested in each position, within this disclosure, the angle is used for the indication of the position. Within the context of this disclosure, the zero angular position should be defined as the position in the rotatable target closest to the substrate. Thus, typically, the zero angular position lies within the direct substrate target connection plane 22.

[0044] 2, the magnet assemblies 25 may be positioned at each position having an angle [alpha] in the rotatable targets 20. More specifically, the magnet assemblies 25 can be positioned at a plurality of respective positions having an angle [alpha] in the rotatable targets 20. [ That is, the magnet assemblies 25 can be rotated at a plurality of different angular positions, at which the magnet assemblies have an angle a with respect to the plane 22, Extend vertically from the substrate 100 to the axis 21 of each of the three or more rotatable targets 20.

[0045] 3A and 3B illustrate a first angular position (see FIG. 3A) having a negative angle -α among a plurality of different angular positions (see FIG. 3A), and a second angular position ) Of the magnet assembly 25 is rotated. Reference numeral 23 illustrates the direction of material release from the magnet assembly 25.

[0046] For example, the magnet assemblies 25 may be rotated at a plurality of angular positions at an angular velocity having an absolute value greater than zero. Specifically, the magnet assemblies can be rotated to one limit of the range for angle [alpha], e.g., from the upper limit to another limit of the range for angle [alpha], e.g., to the lower limit and vice versa. At the limits of the range, turning of each velocity can occur, i.e., each velocity can change sign.

[0047] Alternatively, the magnet assemblies 25 may be rotated in a stepwise manner from one position to another. That is, the magnet assemblies 25 can be rotated to each one position where the magnet assemblies 25 can be kept stationary for a predetermined residence time, and then the same or another predetermined residence time The magnet assemblies 25 can be rotated to each other position where they can be held stationary. Such stepwise movement may be repeated to rotate the magnet assemblies 25 at a plurality of different angular positions, such as four or more different angular positions.

[0048] In addition, the angle alpha can also indicate the main direction of material release. In other words, specifically, the material will be sputtered onto the substrate in the direction of angle?. When changing the position of each of the magnet assemblies, the main direction of emission can be varied across the substrate 100. [

[0049] In practicing the embodiments, the uniformity of the layer being formed depends on the power applied to each of the individual positions, how long the magnet assemblies stay in their respective positions, and / or on what angular velocity the magnet assemblies are rotated Accordingly, it can be improved. Specifically, sputtering can be performed while the magnet assemblies are in their respective positions during the residence time.

[0050] In particular, by varying the power provided to three or more rotatable targets, by varying the residence time of the magnet assemblies and / or by continuously varying the angular velocity of the magnet assemblies according to the function, Homogeneity, particularly uniformity, can be improved. Thus, the homogeneity can be improved by sputtering with varying time and / or power. In the case of a variable residence time, it is furthermore possible to switch off the sputtering field at the time of travel (i.e., when each position is changing), which can further increase the uniformity.

[0051] Figure 4 illustrates, by way of example, a cathode assembly as used in the embodiments described herein in greater detail. It should be understood that the elements shown in FIG. 4 may also be applied to the embodiments described herein with respect to other embodiments, particularly FIGS. 1, 2, 3A, and 3B. As shown in Fig. 4, the rotatable target 20 can be disposed on the backing tube, and the target material to be sputtered can be applied to the backing tube. A cooling material tube 40 may be provided on the interior of the rotatable target 20 to reduce the high temperature of the target resulting from the sputtering process. Typically, water may be used as the cooling material. In practicing the embodiments, most of the energy applied to the sputtering process, typically about a few kilowatts in size, is transferred to the target's heat and the heat can be cooled as described herein . As shown in the schematic diagram of FIG. 4, the magnet assembly can be positioned within the backing tube and the cooling material tube, so that the magnet assembly can move to different angular positions within its backing tube and cooling material tube. According to other embodiments, the entire inner portion of the target tube is filled with a cooling material such as water.

[0052] The magnet assembly can be mounted on the axis of the target tube. The pivotal movement as described herein may be generated by an actuator, such as an electric motor, that provides a rotational force. In typical embodiments, two shafts: a first shaft on which the rotatable target tube is mounted on top, and a second shaft are mounted to the cathode assembly. The first shaft is rotated during operation of the cathode assembly. Typically, the movable magnet assembly is mounted on the second shaft. The second shaft can move independently of the first shaft, typically in a manner that allows movement of the magnet assembly as described herein.

[0053] Within the present disclosure, the drawings illustrate schematic cross-sectional views of coaters with exemplary illustrated substrates. Typically, the cathode assemblies 10 include a rotatable target 20 that can have the shape of a cylinder. In other words, the rotatable target 20 extends into and out of the paper when viewed in the drawings. The same is true for the magnet assemblies 25 shown only schematically as cross-sectional elements. The magnet assemblies may extend along the entire length of the cylinder. For technical reasons, it is typical that the magnet assemblies extend by at least 100% of the length of the cylinder, and more typically by at least 105% of the length of the cylinder.

[0054] Figure 5 illustrates the change in power provided to three or more rotatable targets 20 according to a function. Specifically, the function may provide different values for power for different positions. In the graph illustrated in Fig. 5, the vertical axis is the power (U) provided to three or more rotatable targets 20 and the horizontal axis is the angle alpha.

[0055] As the distance from the magnet assembly 25 to the substrate 100 increases, the ion bombardment of the material emitted onto the substrate 100 is reduced. The distance between the magnet assembly 25 or the rotatable target 20 and the substrate 100 along a plane extending vertically from the substrate 100 to the axis 21 of the rotatable target 20 may be constant The distance traveled by the material discharged from the rotatable target 20 to reach the substrate 100 is increased as the values of the angle alpha or the absolute values are increased. Thus, less material is deposited for relatively lower angles? Than for relatively higher angles?.

[0056] In addition, as the values of the angle? Or the absolute values are increased, the incident angle at which the material to be deposited reaches the substrate 100 is increased, which reduces the energy of the ion bombardment. This effect locally affects the structural, morphological, and electrical or optical properties of the film being grown, by controlling local ion impact energy and intensity.

[0057] According to embodiments, the power provided to three or more rotatable targets 20 is varied to compensate for reduced material deposition at each position with high angles alpha. Specifically, the power provided to three or more rotatable targets 20 is higher as the angle alpha of each position is higher, and vice versa. In particular, when the embodiments are practiced, the uniformity of the layer to be deposited can be increased if the sputtering power varies over the time the magnet is moved.

[0058] As shown in FIG. 5, the function for changing the power provided to three or more rotatable targets 20 may be a symmetric function. In addition, the function for varying the power provided to three or more rotatable targets 20 may be an asymmetric function. For example, the function for varying the power provided to three or more rotatable targets 20 may be a polynomial function, a trigonometric function, and / or combinations thereof. For example, the power can be varied in the range of -2 kW to 20 kW, specifically 5 kW to 10 kW.

[0059] In addition, the magnet assemblies 25 may be constantly rotated (" wobbling ") between the left maximum angle and the right maximum angle. However, in order to increase the uniformity of the layer to be deposited, the angular velocity of the magnet assemblies 25, in addition to the change in power, can be continuously changed, as shown in Fig. Further, in the case of continuously changing the angular velocity of the magnet assemblies 25 instead of changing the power, in practice, similar results for uniformity can be obtained.

[0060] Considering the relationship described herein between the material deposited at each position having an angle a and the value of the angle a, a relatively smaller absolute value of the angle a is obtained relative to the relatively larger absolute values of the angle a, It may be beneficial to continuously vary the angular velocity of the magnet assembly in such a way that the angular velocity is higher for the values. That is, the magnet assembly 25 is rotated faster relative to relatively smaller absolute values of the angle alpha than relatively larger absolute values of the angle alpha. Thus, a higher deposition rate at each position with a relatively smaller absolute value of angle alpha can be achieved by reducing the time or effective residence time of material deposition at each of these positions, It can be compensated by comparing with each position having a high absolute value.

[0061] The function for continuously varying the angular velocity of the magnet assemblies 25 may be a symmetric function. In addition, the function for continuously varying the angular velocity of the magnet assemblies 25 may be an asymmetric function. For example, the function for continuously varying the angular velocity of the magnet assemblies 25 may be a polynomial function, a trigonometric function, and / or combinations thereof.

[0062] A function for varying the power provided to three or more rotatable targets 20 is an upwardly opened function, that is to say for larger absolute values on the horizontal axis, larger values on the vertical axis While the function for continuously varying the angular velocity of the magnet assemblies 25 can be a function having a downward open function, i.e., smaller values on the vertical axis for larger absolute values on the horizontal axis. For example, the angular velocity may be continuously varied in the range of 0.5 to 500 [deg.] / S, specifically in the range of 2 to 200 [deg.] / S.

[0063] FIG. 7 shows a further example of a function for varying the power provided to three or more rotatable targets 20. Specifically, FIG. 7 shows an asymmetric function for varying the power provided to three or more rotatable targets 20.

[0064] 7 illustrates two different ways of varying the power provided to three or more rotatable targets 20. The solid line represents a continuous function for varying the power provided to three or more rotatable targets 20, while the individual points in the graph represent three or more rotatable targets 20 Describes a discontinuous function for varying the power supplied. The continuous function may be used for wobbling magnet assemblies, i.e., for rotating the magnet assemblies 25 continuously at a constant angular velocity or a continuously varying angular velocity. The discontinuous function can be used for cases where the magnet assemblies 25 are rotated step by step, i.e., when the magnet assemblies 25 are stepped from one position to another.

[0065] The term " continuous change " or " continuously varying angular velocity " of angular velocity, as used herein, refers to angular velocity that varies stepwise, such as for angularly- . Specifically, in the case of stepwise rotation, generally speaking, the angular velocity is zero while the magnet assemblies 25 are staying in each position, and is a predetermined value when the magnet assemblies are moved from one position to the next. . Such movement can be understood in particular as a non-continuous movement. Thus, the residence time of the magnet assemblies can vary according to the discontinuous function, and / or the angular velocity of the magnet assemblies can vary according to the continuous function.

[0066] According to embodiments, the discontinuous function includes more than four steps. In particular, the more discrete functions have more steps, the more approximated the discrete function is to the continuous function. Thus, in order to implement a function in a cotter for performing the method described herein, it may be advantageous to use a discontinuous function while increasing the number of steps to approximate a continuous function.

[0067] 8 shows an example of a function for changing the power provided to three or more rotatable targets 20 and a function for varying the residence time of the magnet assemblies.

[0068] As outlined herein, the magnet assemblies 25 stay at a particular residence time in each step of the stepwise rotation of the magnet assemblies 25. [ By varying the residence time for the stepwise rotation of the magnet assemblies 25, an effect similar to the effect that can be achieved by successively varying the angular velocity for the continuously rotating magnet assemblies 25 can be achieved . In particular, the residence time may be lower for relatively smaller absolute values of angle alpha than relatively larger absolute values of angle alpha. That is, the magnet assembly 25 stays for a shorter amount of time relative to relatively smaller absolute values of angle? Than to relatively larger absolute values of angle?. Thus, a higher deposition rate at each position with a relatively smaller absolute value of angle alpha can be achieved by reducing the residence time at which material is deposited at each of these positions, And thus can be compensated by comparing with the respective positions having the same value. Thus, the function for varying the residence time of the magnet assemblies 25 may be an upwardly open function. For example, the residence time may vary in the range of 0.5 s to 30 s, specifically in the range of 2 s to 10 s.

[0069] According to embodiments described herein, the power provided to three or more rotatable targets 20, and the continuously varying angular velocities of the magnet assemblies 25 and the magnet assemblies 25, One of the residence times of the gas can be changed according to the function. That is, the power provided to the three or more rotatable targets 20 may vary with the residence time of the magnet assemblies 25 in the case of stepwise rotation, and the magnet assemblies 25 25, it can be changed with a continuous change of the angular velocity of the magnet assemblies 25. [ FIG. 8 illustrates a combination of a change in power and a change in residence time provided to three or more rotatable targets 20. Thus, a function may depend on a number of variables, and / or may be multi-dimensional, and / or may include one or more sub-functions.

[0070] By combining the power change and the time variation (residence time or angular velocity), the uniformity of the layer to be deposited can be further increased. In addition, the power provided to the rotatable targets 20 may be technically limited to the upper and / or lower range of power that may be provided to the rotatable targets 20. [ For example, it may be contemplated that the cathode assembly 10 uses a constant value for the power provided to the rotatable targets 20 that are not technically specified. Thus, for the power provided to the rotatable targets 20, a value within a specified range may be used, and the deviation from the value being considered may be compensated for by varying the residence time or angular velocity. Specifically, if the power provided to the rotatable targets 20, which is greater than the specified range, is to be used for a particular angular position, then the deviation may be a larger retention time for that particular angular position, Can be compensated for by a smaller angular velocity, and vice versa. In the case of implementing embodiments, a high throughput can be achieved that reduces overall processing time and costs.

[0071] According to embodiments, a processing chamber is provided. Specifically, the processing chamber may be a vacuum processing chamber. The processing chamber may include at least one cathode assembly as described herein. In addition, the processing chamber may be configured to perform a method for coating a substrate, as described herein. Typically, the processing chamber may be configured to coat one substrate at one time. Multiple substrates can be sequentially coated.

[0072] According to embodiments, at least three rotatable targets may be arranged in a one-dimensional array of regularly arranged rotatable targets. Typically, the number of rotatable targets is three to twenty, and more typically eight to sixteen.

[0073] According to embodiments, the rotatable targets 20 may be spaced equidistant from each other. Typically, the length of the rotatable targets 20 may be slightly longer than the length of the substrate to be coated. Additionally or alternatively, the area over which the rotatable targets 20 span may be slightly wider than the width of the substrate. Typically, " slightly " includes a range of 100% to 110%. The provision of slightly larger coating length / width helps to avoid boundary effects. Generally, the cathode assemblies are located equidistant from the substrate.

[0074] According to embodiments, three or more rotatable targets 20 may be arranged along the shape of the arc. The shape of the arc can be such that the rotatable targets 20 are positioned closer to the substrate 100 than the outer rotatable targets 20. [ Such a situation is schematically illustrated in Fig. Alternatively, it is also possible that the shape of the arc defining the positions of the rotatable targets 20 is such that the outer rotatable targets 20 are positioned closer to the substrate 100 than the inner rotatable targets 20 Do. The scattering behavior depends on the material to be sputtered. Thus, depending on the application, i. E. The material to be sputtered, providing rotatable targets 20 in arc form can actually increase homogeneity further. The orientation of the arc may depend on the application.

[0075] Additionally or alternatively, three or more rotatable targets 20 may be configured such that the distance between two adjacent rotatable targets 20 extends from the inner rotatable targets 20 to the outer rotatable targets 20 20). ≪ / RTI > For example, the distance between the adjacent outer rotatable targets 20 may be greater than the distance between adjacent adjacent rotatable targets 20. Alternatively, the distance between adjacent outer rotatable targets 20 may be less than the distance between adjacent inner rotatable targets 20. By providing outer rotatable targets 20 having a distance less than the distance between adjacent inner rotatable targets 20, the outermost rotatable targets 20 are moved closer to the inner portion of the substrate. According to embodiments, less material can be wasted.

[0076] In addition, Figure 9 illustrates exemplary anode bars positioned between cathode assemblies that may be used in some of the embodiments described herein.

[0077] According to embodiments, a function for at least one of a change in power provided to three or more rotatable targets, a change in residence time of the magnet assemblies, and a continuous change in angular velocity of the magnet assemblies, Target < / RTI > Alternatively, different functions may be used for different rotatable targets.

[0078] For example, for outer or outermost targets 20, a function different from the function for the other rotatable targets 20 may be used. Generally, outermost rotatable targets 20 are formed by depositing a layer of material (not shown) on a region of substrate 100 that is a superposition of material from less rotatable targets 20 than in the inner region of substrate 100, An asymmetric function can be used for the outer or outermost targets 20 to compensate for this variation in asymmetric deposition. Thus, the function is such that for a region where the deposited layer is a superposition of material from less rotatable targets 20 than in the inner region of the substrate 100, higher values for power, higher Values, and / or lower values for each velocity.

[0079] In the context of the present application, an " outer " rotatable target can be understood as a rotatable target arranged close to the edge of the substrate, while an " inner " rotatable target is a rotatable target . ≪ / RTI > Specifically, when referring to an "outer" rotatable target and an "inner" rotatable target, an "outer" rotatable target may be closer to the edge of the substrate than an "inner" rotatable target. In addition, the " outermost " rotatable target can be understood as a rotatable target arranged closer to the edge of the substrate than the neighbor rotatable targets.

[0080] 10A and 10B illustrate a comparison of the thickness of a film deposited by a conventional process with the thickness of a film deposited by the processes described herein. Deposition is accomplished using rotatable targets arranged at locations of solid lines spaced from the substrate.

[0081] Figure 10a schematically shows two film profiles measured after deposition using conventional processes and deposition using the processes described herein. The y-axis represents the metrical unit for the thickness of the film, while the x-axis represents the unit of measure for the length of the substrate. 10A, the thickness of the film deposited in the region between the rotatable targets 20 by the processes described herein is greater than the thickness of the region immediately below the rotatable targets, Lt; RTI ID = 0.0 > thickness. ≪ / RTI >

[0082] Figure 10B shows a statistical analysis of the deviation of the thickness of the film deposited by the conventional process and the deviation of the thickness of the film deposited by the processes described herein. As can be seen from Fig. 10b, the thickness variation is higher for the conventional process shown on the left than for the process described herein on the right. In practicing the embodiments, the uniformity of the layer thickness can be increased.

[0083] Figs. 11A and 11B show a comparison of the electrical properties of a film deposited by a conventional process and the electrical properties of a deposited film using the processes described herein. Deposition is accomplished using rotatable targets arranged at locations of solid lines spaced from the substrate.

[0084] Figure 11A schematically illustrates three film profiles measured after deposition using two different conventional processes and deposition using the processes described herein. The y-axis represents the measurement unit for the electrical properties of the film, while the x-axis represents the measurement unit for the length of the substrate. As can be seen from Fig. 11A, the illustrated electrical properties of the films deposited by the processes described herein are more consistent than in the case of conventional processes, and more specifically, more uniform overall.

[0085] Figure 11B shows a statistical analysis of the deviation of the electrical properties of the films deposited by two conventional processes and of the electrical properties of the films deposited by the processes described herein. As can be seen from FIG. 11B, the deviation of the illustrated electrical characteristics is higher for conventional processes shown on the left and middle than for the process described here on the right. In practicing the embodiments, the uniformity of the electrical properties of the layer being deposited can be increased.

[0086] In the following, embodiments which generate particularly high uniformity are described.

[0087] According to one aspect, there is provided a method for coating a substrate using at least one cathode assembly having three or more rotatable targets, wherein three or more rotatable targets each have a magnet Assembly. The method includes rotating magnet assemblies from a substrate at a plurality of different angular positions relative to a plane extending vertically to an axis of each rotatable target of three or more rotatable targets; And varying at least one of the power provided to the three or more rotatable targets, the residence time of the magnet assemblies, and the angular velocity of the magnet assemblies that change continuously, depending on the function stored in the database or memory .

[0088] According to embodiments, there is provided a method for coating a substrate using at least one cathode assembly having three or more rotatable targets, wherein three or more rotatable targets each have a positioning Magnet assembly. The method includes rotating magnet assemblies at a plurality of different angular positions, wherein at a plurality of different angular positions, the magnet assemblies are moved from the substrate in a direction perpendicular to the axis of each rotatable target of three or more rotatable targets Having a predetermined angle with respect to a plane extending to the first side; Reading from the memory a function for at least one of a change in power provided to three or more rotatable targets, a change in residence time of the magnet assemblies, and a continuous change in angular velocity of the magnet assemblies; And varying at least one of the power provided to the three or more rotatable targets, the residence time of the magnet assemblies, and the angular velocity of the magnet assemblies continuously varying, depending on the function.

[0089] According to embodiments, there is provided a method for coating a substrate using at least one cathode assembly having three or more rotatable targets, wherein three or more rotatable targets each have a positioning Magnet assembly. The method comprises the steps of rotating the magnet assemblies with more than four different angular positions - at more than four different angular positions, the magnet assemblies are moved from each of the three or more rotatable targets Having an angle with respect to a plane extending perpendicularly to the axis of the shaft; Reading a function for a change in residence time of the magnet assemblies for more than four different positions; And varying the residence time of the magnet assemblies for more than four different angular positions, depending on the function.

[0090] According to embodiments, there is provided a method for coating a substrate using at least one cathode assembly having three or more rotatable targets, wherein three or more rotatable targets each have a positioning Magnet assembly. The method includes rotating magnet assemblies with more than four different angular positions relative to a plane extending perpendicularly to the axis of each rotatable target of three or more rotatable targets from the substrate; And varying the residence time of the magnet assemblies for more than four different respective positions, depending on the function stored in the database.

[0091] Typically, the residence time is different for each different position.

[0092] According to embodiments, there is provided a coater for performing the methods described herein. The coater may include a memory, from which functions may be read. Specifically, the memory can include a look-up table, and the function is stored in its look-up table.

[0093] Methods and coaters as disclosed herein can be used to deposit materials on substrates. More specifically, the method and the coater enable high uniformity of the deposited layer, and thus can be used in the production of displays, such as flat panel displays such as TFTs. Given the improved uniformity, as an additional effect of improved uniformity, the overall material consumption can be reduced, which is particularly preferred when using expensive materials. For example, the proposed method and coater can be used for the deposition of indium tin oxide (ITO) layers in the production of flat panel displays.

[0094] According to certain embodiments, a conductive layer fabrication process and / or system is provided, the fabrication process and / or system may be for fabrication of an electrode or a bus (especially in a TFT), and the fabrication process and / The system comprises a system for coating a substrate and / or a system for coating a substrate, respectively, according to embodiments herein. For example, such a conductive layer may be, but is not limited to, a metal layer or a transparent conductive layer, such as an ITO (indium tin oxide) layer. For example, the method described herein may be used to form active layers in TFTs, such as indium gallium zinc oxide (IGZO), or to form active layers comprising IGZO.

[0095] For example, at least some embodiments of the present disclosure can yield high uniformity or resistivity of an aluminum layer or IGZO layer formed on a glass substrate. For example, a thickness variation of 0% to 2% or even 0.5% to +/- 1.5% over a substrate area of 406 mm x 355 mm can be achieved. In addition, electrical characteristic deviations of 2% to 8% or even 5% to 7% over a substrate area of 406 mm x 355 mm can be achieved.

[0096] Within the present disclosure, at least some of the figures illustrate schematic cross-sectional views of coating systems and substrates. At least some of the illustrated targets are shaped as a cylinder. In these drawings, it should be noted that, as viewed in the drawings, the target extends into and out of the paper. The same is true for the magnet assemblies shown only schematically as cross-sectional elements. The magnet assemblies may extend along the entire length of the cylinder defined by the cylindrical target. For technical reasons, it is typical that the magnet assemblies extend by at least 100% of the length of the cylinder, and more typically by at least 105% of the length of the cylinder.

[0097] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is defined by the following claims Lt; / RTI >

Claims (15)

CLAIMS 1. A method for coating a substrate (100) using at least one cathode assembly (10) having three or more rotatable targets (20)
The three or more rotatable targets each include a magnet assembly (25) positioned therein,
The method comprises:
A plurality of different angular positions relative to a plane 22 extending vertically from the substrate 100 to the axis 21 of each rotatable target of the three or more rotatable targets 20, Rotating the magnet assemblies (25) with a plurality of magnet assemblies (25); And
The power provided to the three or more rotatable targets 20, the residence time of the magnet assemblies 25, and the time constant of the magnet assemblies 25 25), < / RTI >
/ RTI >
A method for coating a substrate. The method according to claim 1,
One of either the power provided to the three or more rotatable targets 20 and the continuously varying angular velocity of the magnet assemblies 25 and the residence time of the magnet assemblies 25, Depending on the function,
A method for coating a substrate. 3. The method according to claim 1 or 2,
A change in power provided to the three or more rotatable targets (20), a change in residence time of the magnet assemblies (25), and a change in the power of the magnet assemblies (25) Further comprising reading a function for at least one of successive changes in each velocity,
A method for coating a substrate. 4. The method according to any one of claims 1 to 3,
Wherein the function comprises a polynomial function and / or the function comprises a trigonometric function,
A method for coating a substrate. 5. The method according to any one of claims 1 to 4,
Wherein the function comprises a symmetric function,
A method for coating a substrate. 6. The method according to any one of claims 1 to 5,
Wherein the function comprises an asymmetric function,
A method for coating a substrate. 7. The method according to any one of claims 1 to 6,
The function determines the amount of material sputtered on the substrate (100) at each of the plurality of different positions.
A method for coating a substrate. 8. The method according to any one of claims 1 to 7,
Wherein the function is for sputtering a uniform layer on the substrate (100).
A method for coating a substrate. 9. The method according to any one of claims 1 to 8,
Wherein the database comprises a look-up table,
A method for coating a substrate. 10. The method according to any one of claims 1 to 9,
Wherein the function is a function dependent on each position,
A method for coating a substrate. 11. The method according to any one of claims 1 to 10,
Wherein the function is a function dependent on each rotatable target (20) of the three or more rotatable targets (20)
A method for coating a substrate. 12. The method according to any one of claims 1 to 11,
The magnet assembly (25) is rotated at the plurality of different angular positions at an angular velocity of more than zero,
A method for coating a substrate. 13. The method according to any one of claims 1 to 12,
The function comprises a discontinuity function for varying the residence time, in particular, the three or more rotatable targets 20 are arranged in a stepwise manner in accordance with the discontinuous function, the plurality of different respective positions ≪ / RTI >
A method for coating a substrate. CLAIMS 1. A method for coating a substrate (100) using at least one cathode assembly (10) having three or more rotatable targets (20)
The three or more rotatable targets each include a magnet assembly (25) positioned therein,
The method comprises:
And more than four different angular positions with respect to a plane (22) extending vertically from the substrate (100) to the axis (21) of each rotatable target of the three or more rotatable targets (20) Rotating the magnet assemblies (25); And
Varying the residence time of the magnet assemblies (25) for more than four different respective positions, depending on the function stored in the database or memory
/ RTI >
A method for coating a substrate. 15. A method for coating a substrate using the method of any one of claims 1 to 14,
cotter.

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