CN108884556A - Method and coating machine for coated substrates - Google Patents
Method and coating machine for coated substrates Download PDFInfo
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- CN108884556A CN108884556A CN201680084352.7A CN201680084352A CN108884556A CN 108884556 A CN108884556 A CN 108884556A CN 201680084352 A CN201680084352 A CN 201680084352A CN 108884556 A CN108884556 A CN 108884556A
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- magnet assembly
- rotatable
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- 239000000758 substrate Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims abstract description 82
- 239000011248 coating agent Substances 0.000 title claims description 31
- 238000000576 coating method Methods 0.000 title claims description 31
- 230000006870 function Effects 0.000 claims abstract description 109
- 230000008859 change Effects 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 35
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 230000002045 lasting effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 description 34
- 230000008021 deposition Effects 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 230000003068 static effect Effects 0.000 description 13
- 238000010849 ion bombardment Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000007560 sedimentation technique Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007619 statistical method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000000635 valve cell Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A kind of method for using at least one cathode assembly (10) coated substrates (100) is provided, at least one cathode assembly (10) has three or more rotatable targets (20), three or more rotatable targets (20) respectively include the magnet assembly (25) being located therein.The method includes：Rotary magnet component (25) to multiple and different Angle Positions relative to plane (22), plane (22) extends perpendicularly to the axis (21) of the corresponding rotatable target of three or more rotatable targets (20) from substrate (100)；And at least one following is changed according to the function being stored in database or memory：It is provided to the angular speed of the power of three or more rotatable targets (20), the residence time of magnet assembly (25) and magnet assembly (25) constantly changed.
Description
Technical field
This application involves the methods and coating machine for coated substrates, and in particular to have height for sputtering on substrate
The method of the layer of uniformity and coating machine for executing the method.
Background technique
It is many that being formed on substrate, which has the layer of high uniformity (uniform thickness and electrical property i.e. on extensional surface),
Subject under discussion in technical field.For example, in the field of thin film transistor (TFT) (TFT), the thickness uniformity and electrical property it is uniform
Property to reliably manufacture display channel region for can be a subject under discussion.In addition, conforming layer is generally advantageous to the reproducibility of manufacture.
It is sputtering that one kind, which being used for the cambial method on substrate,.Sputtering has developed into a variety of manufacturing fields valuable
The method of value, such as in the manufacture of TFT.During sputtering, by using high energy particle (such as inertia or reaction gas by
Swash (energized) ion) target material is bombarded, atom is projected from target material.The atom of injection can be deposited on substrate, so as to
Form sputter material layer.
However, may have high uniformity skill by sputtering forming layer due to the geometry of such as target and/or substrate
Art requirement.Particularly, due to the irregular spatial distribution of the material of sputtering and ion bombardment, it may be difficult in wide substrate
On reach uniform sputter material layer and ion bombardment.Multiple targets are provided on substrate may improve a layer uniformity.
In view of the above, the new method and coating machine for coated substrates of at least some of this field are overcome the problems, such as
It is beneficial.
Summary of the invention
In view of the above, a kind of method for coated substrates and a kind of coating machine are provided.Present disclosure other
Aspect, advantage and feature are apparent from claims, specification and attached drawing.
According to one aspect, provide it is a kind of for using at least one cathode assembly coated substrates method, described at least one
A cathode assembly has three or more rotatable targets, three or more described rotatable targets respectively include the magnetic being located therein
Body component.The method includes：Rotary magnet component is to multiple and different Angle Positions relative to a plane, and the plane is from base
Plate extends perpendicularly to the axis of the corresponding rotatable target of three or more rotatable targets；And according to being stored in database
Or the function in memory changes at least one following：It is provided to power, the magnet of three or more rotatable targets
The residence time of component and the angular speed of magnet assembly constantly changed.
According to another aspect, provide a kind of for executing the coating machine of the method for coated substrates.
Other aspect, details, advantage and features are apparent by dependent claims, specification and attached drawing.
Embodiment is further related in the equipment for executing disclosed method, and including described each for executing
Part of appliance in terms of method.In terms of these methods can by hardware component, by appropriate software programming computer, both appoint
What is combined or any other mode executes.In addition, being further related to according to the embodiment of the present disclosure in described for operating
Equipment method.In terms of method for operating described equipment includes the method for executing the function of equipment.
Detailed description of the invention
In order to enable the features described above of present disclosure to be understood in detail, the above letter can be obtained by referring to embodiment
The particularly description of the present disclosure to be summarized.Attached drawing is related to the embodiment of present disclosure and is described in hereinafter：
Fig. 1 is painted the schematic section of coating machine, and diagram is used for coated substrates according to implementations described herein
Method；
Fig. 2 is painted the schematic section of coating machine, and diagram is used for coated substrates according to implementations described herein
Method；
Fig. 3 a and 3b are painted the schematic section of coating machine, and diagram is according to implementations described herein for being coated with
The method of substrate；
Fig. 4 is painted the schematic section of coating machine, and diagram is used for coated substrates according to implementations described herein
Method；
Fig. 5 is painted the variation according to the power of implementations described herein according to function；
Fig. 6 is painted the lasting variation according to the angular speed of implementations described herein according to function；
Fig. 7 is painted the other variation according to the power of implementations described herein according to function；
Fig. 8 is painted the power according to implementations described herein according to the other variation of function and according to described herein
The residence time of embodiment is according to the variation of function；
Fig. 9 is painted to be positioned to revolve for three or more of coated substrates according to implementations described herein
Turn the schematic section of target；
Figure 10 a and 10b are painted the comparison of the thickness by traditional handicraft and by the films of process deposits described herein；With
And
Figure 11 a and 11b are painted the comparison of the electrical property by traditional handicraft and by the films of process deposits described herein.
Specific embodiment
Now by referring to the numerous embodiments of present disclosure, one or more examples of numerous embodiments are drawn in detail
It is shown in figure.In being described below of attached drawing, identical label indicates identical component.In general, only describing to implement about out of the ordinary
The difference of mode.Each example is provided by way of explaining present disclosure and is not meant to be the limitation to present disclosure.
In addition, the feature of part for being shown or being described as an embodiment can be used for other embodiments or and other embodiments
In conjunction with to generate further embodiments again.It is intended to that this explanation is made to include these modifications and variations.
Sputtering can carry out as diode sputtering or magnetron sputtering.The advantages of magnetron sputtering, is particularly high deposition rate.
In general, magnet is located in rotatable target.Rotatable target used herein is usually rotatable curved (curved) target.By in target
Rear (inside for being located at target in the case where rotatable target) arrangement magnet or multiple magnets, in order in generated magnetic field
Free electron is captured in (magnetic field directly results from target lower face), these electronics, which are forced in magnetic field, to be moved and can not take off
From.The probability of ionized gas molecule is usually improved several orders of magnitude by this.This significantly increases deposition rate in turn.
Terms used herein " magnet assembly " are the units that can generate magnetic field.In general, magnet assembly includes forever
Long magnet.Particularly, magnet assembly can be made of permanent magnet.This permanent magnet is generally arranged in rotatable target, so that
Free electron is trapped in generation in the magnetic field of rotatable target lower face.In many embodiments, magnet assembly includes
Magnetic yoke.According to one aspect, magnet assembly can be moveable in rotatable pipe.It is more particularly logical by moving magnet assembly
The axis rotary magnet component along the rotatable pipe as rotation center is crossed, sputter material can be guided along different directions.
Substrate can continuously move (" dynamic is coated with ") during coating or substrate to be coated can be static during coating
(" static state coating ").According to implementations described herein, these methods provide static sedimentation technique.In general, especially
For large-area substrates processing, the processing of the large-area substrates of such as vertical orientation can have between static sedimentation and Dynamic deposition
It is distinguished.Dynamic sputter is series connection (inline) technique that wherein substrate is continuously or quasi-continuously mobile adjacent to sedimentary origin.
Because technique can before substrate moves into deposition region it is stabilized, and then when substrate passes through sedimentary origin keep not
Become, therefore due to the above-mentioned fact, dynamic sputter can be relatively easy to.However, Dynamic deposition can have other shortcomings, such as particle produces
It is raw.In the case where this may be deposited especially for TFT backplate.It, can be for example for TFT according to implementations described herein
Processing provides static sputtering, wherein can make plasma stability before being deposited in initial substrate.It should be noted that technology
Personnel it will be appreciated that compared to Dynamic deposition technique and different term static sedimentation technique is not excluded for any movement of substrate.It is quiet
State depositing operation may include for example in the static substrate position during deposition, the swing during deposition (oscillating) base
Board position, average substrate position substantially fixed during deposition, shake (dithering) the substrate position during deposition
Set, during deposition wave (wobbling) substrate position, cathode is set to (i.e. predetermined group of depositing operation in a chamber
Cathode be set to the depositing operation in the chamber), layer deposition during substrate position, wherein deposition chambers for example pass through
Close the valve cell for separating the chamber and adjacent chamber and relative to adjacent chamber have sealing atmosphere, or combinations thereof.Therefore,
Static sedimentation technique can be regarded as the depositing operation with static substrate position, the deposition of substrate position with substantial static state
The depositing operation of technique or the substrate position with part static state.Therefore, static sedimentation technique described herein can be heavy with dynamic
Product technique clearly differentiate, rather than for static sedimentation technique substrate position during deposition absolutely not any fortune
It is dynamic.
Term " vertical direction " or " vertical orientation " can be regarded as and " horizontal direction " or " horizontal orientation " different from.?
That is " vertical direction " or " vertical orientation " can be about the substantially perpendicular orientation of such as carrier and substrate, wherein deviateing
Precise perpendicularity direction or vertical orientation several years, such as up to +/- 10 ° or 15 ° even as high as +/-, it still can be considered " substantially perpendicular
Direction " or " substantially perpendicular orientation ".Vertical direction can be substantially parallel to gravity.
According to can essentially vertically may be used with the implementations described herein in conjunction with other embodiments described herein
It is especially interpreted as allowing +/- 20 ° or hereinafter, such as +/- 10 ° or less of offset from perpendicular when meaning substrate orientation.It can mention
For this deviation, such as because it may cause more stable substrate position slightly offset from vertically oriented substrate supporting element.However,
Such substrate orientation during the deposition of organic material can be considered substantially perpendicular, and it is fixed can be considered different from horizontal base plate
To.
Term " substantially perpendicular " can be about the substantially perpendicular fixed of such as rotary shaft and support surface or substrate surface
To wherein deviateing precise perpendicularity orients the several years, such as up to +/- 10 ° or even as high as +/- 15 ° still can be considered " substantially vertical
Directly ".
Example described herein can be used to be deposited on large area substrates, for example, with for lithium battery manufacture or it is electroluminescent
Color-changing window.As an example, using the cooling device for being used for process layer (layer includes the material with low melting temperature), it is multiple
Hull cell can be formed on large-area substrates.According to some examples, large-area substrates can be the 4.5th generation, the 5th generation, the 7.5th
In generation, the 8th generation or even the 10th generation, the 4.5th generation, correspond to about 0.67m2Substrate (0.73m x 0.92m), the 5th generation corresponded to
About 1.4m2Substrate (1.1mx 1.3m), the 7.5th generation correspond to about 4.29m2Substrate (1.95m x 2.2m), the 8th generation it is corresponding
In about 5.3m2Substrate (2.16m x 2.46m), the 10th generation correspond to about 9.0m2Substrate (2.88m × 3.13m).It is even all
Such as the 11st generation, the more Gao Dai in the 12nd generation and corresponding substrate area can be applied similarly.
Terms used herein " substrate " should especially include non-flexible substrate, such as glass plate.Present disclosure is not limited to
This and term " substrate " also may include flexible base board, such as coiled material (web) or foil.
Sputtering can be used in the production of display.In more detail, sputtering can be used for metallizing, such as generation electrode or remittance
Stream row.Sputtering is also for generating thin film transistor (TFT) (TFT).Sputtering also can be used for generating ITO (tin indium oxide) layer.
Sputtering also can be used for producing thin-film solar cells.Thin-film solar cells includes back contact, absorbed layer and transparent
Conductive oxide layer (TCO).In general, contact and tco layer is carried on the back to generate by sputtering, and absorbed layer is generally in chemical vapor deposition
It is made in product technique.
In the context of this application, term " coating ", " deposition " and " sputtering " synonymously uses.
According to implementations described herein, the method for coated substrates is provided.The method can be executed by coating machine.
Coating machine includes at least one cathode assembly, at least one described cathode assembly has three or more rotatable targets.It is described
Three or more rotatable targets, each of three or more especially described rotatable targets includes being positioned at magnetic therein
Body component.In general, magnet assembly is relative to a Plane Rotation to multiple and different especially in deposition materials during on substrate
Angle Position, the plane extends perpendicularly to the corresponding rotatable target of three or more rotatable targets from substrate
Axis.Particularly, for each of multiple and different Angle Positions, magnet assembly extends perpendicularly to three relative to from substrate
The plane of the axis of the corresponding rotatable target of a or more rotatable target has an angle.In general, it is described three or more can
Rotary target can respectively be the cylindrical sputter cathode that can be rotated around rotary shaft.
According to the one side of present disclosure, at least one following：Change at least one following according to function：It provides
To the power of three or more rotatable targets, the residence time of magnet assembly and the angular speed of magnet assembly, the angular speed
Constantly change.That is, non-constant power is provided to three or more rotatable targets and/or is stopped using different
Stay time and/or the angular speed using changing magnet assembly.Typically, sputtering power, residence time and/or angular speed
Changed according to the position of magnet assembly.It is worth noting that, sputtering power often corresponds directly to be applied to rotatable target
Power.Other than the value close to 0V, the relationship between the voltage and sputtering power of application is in the first approximate (first
It approximation is linear in).Therefore it provides the description of the change to the power of three or more rotatable targets 20
It can be regarded as the change for being provided to the voltage of three or more rotatable targets 20, and vice versa.Particularly, in practice,
Changeable sputtering power, so as to cause the power for being applied to three or more rotatable targets to change.In general, voltage can be
Change in range from -200V to -800V, especially changes in the range from -300V to -550V.It is provided in addition, changing
The electric current of three or more rotatable targets is also feasible.Therefore it provides to the power of three or more rotatable targets 20
Change description can be regarded as being provided to the change of the voltage of three or more rotatable targets 20 and/or be provided to three or
The change of the electric current of more rotatable targets 20, and vice versa.
According to implementations described herein, is executed according to discrete function and change magnet assembly in the stop of Angle Position out of the ordinary
Time and/or according to continuous function execute change magnet assembly angular position out of the ordinary angular speed.
According to implementations described herein, is read from database or memory and be used for following functions of at least one：
It is provided to the change of the power of three or more rotatable targets, the change of the residence time of magnet assembly and magnet assembly
The lasting change of angular speed.At least one following changes are executed then according to function：It is rotatable to be provided to three or more
The angular speed of the power of target, the residence time of magnet assembly and magnet assembly, the angular speed of magnet assembly continuously change or by
Continuously change.Particularly, such as function can be predefined for special process, and from data before special process execution
Library or memory function reading.For example, the different functions of the layer for different-thickness to be sputtered can be stored.
That is, function is stored in memory, and change is executed according to function.In general, function can according to
The function of Angle Position, i.e. function may include the different value for different Angle Positions.According to embodiment, sputtered in these Angle Positions
It can be determined by function in the amount of the material on substrate.That is, by including the value depending on Angle Position, as implementation embodiment party
When formula, the layer with high uniformity can be sputtered on substrate.In general, function can be predefined based on some tracks.
In general, being provided to the power of three or more rotatable targets and one of following being changed according to function：Magnet group
The residence time of part and the angular speed of magnet assembly continuously changed.The angular speed system of magnet assembly constantly changes.Particularly,
The residence time of magnet assembly can be changed according to discrete function and/or the angle speed of magnet assembly can change according to continuous function.
That is, the residence time of the power and magnet assembly that are provided to three or more rotatable targets changes according to function, or
The power for being provided to three or more rotatable targets is changed according to function and the angular speed of magnet assembly changes according to continuous
Become.
In the context of this application, the continuous of angular speed changes the discontinuous change that can be different from angular speed, angular speed
Gradually (stepwise) of discontinuous change such as angular speed change, i.e., from zero to a certain value, and vice versa.
When carrying out embodiment, can help to form the layer with high-quality on substrate.Particularly, heavy on substrate
The thickness of lamination can be high uniformity throughout entire substrate.In addition, the high homogenieity that can help to layer (such as is just such as grown
For the feature of structure, specific resistance (specific resistance) and/or the ply stress of crystal etc).For example, real
The mode of applying can have in the practice for forming metalization layer in TFT production (such as manufacturing TFT-LCD display)
Benefit, because signal delay therein depends on the thickness of layer, so that the heterogeneity of thickness may cause pixel slightly not
Same time point is powered (energized).In addition, embodiment can be to have in the practice for being used to form the layer being subsequently etched
Benefit, because the uniformity of thickness degree is conducive to realize identical result at the different location for being formed by layer.
In the context of this application, the cylinder that three or more rotatable targets can respectively for that can rotate around rotary shaft
Sputter cathode.
According to embodiment, coating system includes vacuum chamber, and sputtering technology executes in vacuum chamber.In the application
Term " vacuum " means lower than 10-2Mbar pressure (when situation may for processing gas be flowed in vacuum chamber when, pressure example
In this way about 10-2Mbar, but not limited to this), or more in particular lower than 10-3The pressure of mbar is (when situation may be not handle
When gas flows in vacuum chamber, pressure is, for example, about 10-5Mbar, but not limited to this).Coating system can form processing mould
Block, processing module form the part of manufacture system.For example, coating system can be realized in the system manufactured for TFT, or
It is more particularly realized in the system manufactured for TFT-LCD, such as AKT-PiVot PVD system (application material (Applied
Materials), holy santa clara (Santa Clara), California (CA)), but not limited to this.
Fig. 1 is schematically painted the substrate 100 on substrate holder part 110.The rotatable target 20 of cathode assembly 10 can position
On substrate 100.Negative potential can be applied to rotatable target 20.Magnet assembly 25 is schematically depicted as being positioned at rotatable
In target 20.In many embodiments, the anode (not being illustrated in Fig. 1) that can be applied positive potential can be positioned so that close to can revolve
Turn target 20.This anode can have the shape of stick, and the axis of stick is generally arranged to be parallel to the axis of cornue (angular tube).?
In other embodiments, bias in addition can be applied to substrate." positioning magnet assembly " used herein can be regarded as in magnet
Component operates coating machine in the case where being located at a certain fixed position.In Fig. 1, three or more rotatable targets 20 are only shown
In a rotatable target 20.However, same principle can be applied to two or more in three or more rotatable targets 20
It is a.
Typical permanent magnet used in implementations described herein has the first magnet and a pair of second magnet, the
One magnet has the first magnetic pole, this has the second magnetic pole to the second magnet.These extremely respectively mean a surface of magnet assembly.These
Surface is generally from medial surface to rotatable target.
According to implementations described herein, magnet assembly has the first magnetic in the direction of the first plasma track
Pole and the second magnetic pole in the direction of the second plasma track.First magnetic pole can be south magnetic pole, and the second magnetic pole can be magnetic
The arctic.In other embodiments, the first magnetic pole can be magnetic north pole, and the second magnetic pole can be south magnetic pole.This can to the second magnet
With the second magnetic pole (such as the South Pole or arctic) in the direction of the first plasma track and in the second plasma track
Direction in the first magnetic pole (such as the arctic or South Pole).
Therefore, each of three magnets can be made of one or more sub- magnets, and three magnets can form two magnetrons,
One magnetron forms the first plasma track, and a magnetron forms the second plasma track.First plasma rail
Road and the second plasma track can respectively have the principal direction that material is projected from target in the ion bombardment of plasma.Therefore,
Magnet assembly 25 may include the principal direction that material projects, and the principal direction that the material projects can be the first plasma track and the
The superposition of the principal direction of two plasma tracks.
In fig. 1 it is illustrated that the enlarged drawing of magnet assembly 25, is painted examples described herein implementations.As shown,
The South Pole be located at centre, and the arctic by South Pole frame therebetween.
The surface of substrate can define a plane, this plane is horizontally arranged in the figure shown in.In the context of the application
In, the angle of magnet assembly is the plane definition relative to the axis for extending perpendicularly to rotatable target 20 from substrate 100.At this
In the embodiment of text description, this plane also can be perpendicular to substrate holder part.In the context of this application, this plane can be described as
" substrate-target interconnection level (substrate-target interconnection plane) ".In Fig. 1,3a and 3b, this is flat
Face is illustratively depicted as vertically arranged dotted line, has label 22.
Although rotatable target 20 is illustrated as being arranged in the upper of horizontally disposed substrate 100 by the embodiment being illustrated in figure
Side, and the definition of substrate-target interconnection level is illustratively explained referring to these embodiments, however other orientations are also feasible
's.Particularly, the orientation of substrate also can be vertical as described herein.Particularly, it is coated in view of large area, if substrate is vertical
Ground orientation, then the transmission and processing of substrate can simplify and become easy.In other embodiments, or even substrate arranged can be existed
Somewhere between horizontal and vertical orientation.
According to implementations described herein, magnet assembly 25 can rotate to multiple and different Angle Positions, magnet assembly 25
There is angle relative to plane 22 in these different Angle Positions, plane 22 extends perpendicularly to three or more from substrate 100
The axis 21 of the corresponding rotatable target of multiple rotatable targets.The angle of Angle Position can be equal to or be greater than -60 °, particularly be equal to or greatly
In -40 °, typically equal to or greater than -15 ° and/or be equal to or less than 60 °, particularly be equal to or less than 40 °, typically equal to
Or less than 15 °.
In addition, magnet assembly 25 can have start angle or with reference to angle, magnet assembly 25 is from start angle or reference angle
First Angle Position of the degree rotation into multiple and different Angle Positions.Start angle can be extended perpendicularly to relative to from substrate 100
The plane 22 of the axis 21 of the corresponding rotatable target of three or more rotatable targets 20 is non-zero, all +/- 5 ° to +/- 15 in this way.
In addition, the range illustrated herein for Angle Position can be relative to start angle.That is, Angle Position can be relative to start angle
Measure, start angle can relative to extend perpendicularly to the corresponding of three or more rotatable targets 20 from substrate 100 can
The plane 22 of the axis 21 of rotary target is zero or non-zero.
In general, rotatable target 20 has the shape of cylinder.For the element (such as magnet assembly) being described in detail in cylinder
Angle Position, can be used column base mark.In this disclosure, it is contemplated that the special attention of diagonal position, angle are used to indicate that
Position.In this disclosure, zero angle position should be defined as the position near substrate in rotatable target.Thus zero degree
Position is normally in straight substrate target connection plane 22.
As shown in Figure 2, magnet assembly 25 can be positioned at the Angle Position with angle [alpha] in rotatable target 20.Particularly
Ground, magnet assembly 25 can be positioned at multiple Angle Positions with angle [alpha] in rotatable target 20.That is, magnet assembly 25
It can rotate to multiple and different Angle Positions, magnet assembly vertically prolongs in these different Angle Positions relative to from substrate 100
The plane 22 for extending to the axis 21 of the corresponding rotatable target of three or more rotatable targets 20 has angle [alpha].
The exemplary wherein magnet assembly 25 that is painted of Fig. 3 a and 3b rotates the first Angle Position into multiple and different Angle Positions
The case where with the second Angle Position, the first Angle Position have negative angle-α (see Fig. 3 a), and the second Angle Position has positive-angle α (see figure
3b).23 graphic material of label is from the direction that magnet assembly 25 projects.
For example, magnet assembly 25 can be rotated with the angular speed that absolute value is greater than zero to multiple Angle Positions.Particularly, magnetic
Body component can rotate another limitation to the range of angle [alpha] (under such as from a limitation (such as upper limit) of the range of angle [alpha]
Limit), and vice versa.Under the limitation of the range, the steering of angular speed can produce, i.e. angular speed can change symbol
(sign)。
Alternatively, magnet assembly 25 can be rotated from an Angle Position to another Angle Position in a step-wise fashion.That is, magnet
Component 25 can rotate to an Angle Position, and magnet assembly 25 can be remain stationary in the Angle Position up to the scheduled residence time, and be connect
Rotation to another Angle Position, magnet assembly 25 can be remain stationary in another Angle Position up to identical or another scheduled stop
Time.Such gradually movement is repeatable, and with rotary magnet component 25 to multiple and different Angle Positions, such as four or more are not
Same Angle Position.
In addition, angle [alpha] is also referred to as showing the principal direction that material projects.That is, material will be particularly along the direction of angle [alpha]
It is sputtered on substrate.When changing the Angle Position of magnet assembly, the principal direction of injection can change on substrate 100.
When carrying out embodiment, stopped at various locations based on power, the magnet assembly applied for each Angle Position
How long and/or magnet assembly with the rotation of which kind of angular speed, the uniformity of the layer of formation can be improved.Particularly, when magnet group
Sputtering can be performed when Angle Position stops and reaches the residence time in part.
Particularly, by being provided to the power of three or more rotatable targets, by according to function according to function change
The residence time for changing magnet assembly and/or the angular speed by according to continuous changing magnet assembly, layer to be sputtered
Homogenieity and especially uniformity can be improved.Therefore, by being sputtered using the time and/or power of variation,
Homogenieity can be improved.In the case where changing the residence time, it can be further turned off (when i.e. Angle Position changes) during exercise
Electric field is sputtered, to can further improve uniformity.
Fig. 4 is exemplary in more detail to be painted cathode assembly used in implementations described herein.It will be appreciated that drawing
Element shown in Figure 4 is equally applicable in other embodiments described herein, is described especially with regard to Fig. 1,2,3a and 3b
Embodiment in.As shown in Figure 4, rotatable target 20 can be placed in penstock, and target material to be sputtered can be applied to penstock.For
The high temperature of target, coolant pipe 40 caused by reducing because of sputtering technology may be disposed on the inside of rotatable target 20.It is general next
It says, water can be used as coolant.When carrying out embodiment, the major part-for being input to the energy of sputtering technology is generally counted
Kilowatt the order of magnitude-be converted into the heat of target, can be cooled down as described herein.As shown in the schematic diagram of Fig. 4, magnet assembly can
It is positioned in penstock and coolant pipe, so that magnet assembly can be in being wherein moved to different Angle Positions.According to other implementations
Mode, the entire inside of target pipe are filled the coolant of such as water.
Magnet assembly is mountable on the axis of target pipe.Pivoting action described herein can be caused by actuator, actuator example
Such as it is to provide the motor of rotary force.In a typical implementation, there are two axis for cathode assembly assembly：First axle and second
Axis, rotatable target pipe are installed in first axle.First axle is rotated when cathode assembly operates.Moveable magnet assembly is general
It is installed on the second axis.Second axis can be moved independently of first axle, typically be moved in such manner independently of first axle to allow
Magnet assembly moves as described herein.
In this disclosure, attached drawing show coating machine and it is exemplary shown in substrate schematic cross-section.In general,
Cathode assembly 10 includes the rotatable target 20 that can have cylindrical shape.In other words, when watching attached drawing attentively, rotatable target 20 is extended to
Outside Zhang Zhonghe paper.This is equally applicable to magnet assembly 25, and magnet assembly 25 is also shown schematically only depicted as sectional element.Magnet assembly
It can extend along the whole length of cylinder.Due to technical reason, magnet assembly typically extends at least the 100% of body length,
More typically extend at least the 105% of body length.
Fig. 5 is painted the change for being provided to the power of three or more rotatable targets 20 according to function.Particularly, for not
Same Angle Position, function can provide different performance numbers.In the chart being painted in Fig. 5, vertical axis is to provide to three or more
The power U of a rotatable target 20, trunnion axis are angle [alpha]s.
With the increase from magnet assembly 25 to the distance of substrate 100, project to the ion bombardment of the material on substrate 100
It reduces.Although extending perpendicularly to rotatable target along from substrate 100 between magnet assembly 25 or rotatable target 20 and substrate 100
The distance of the plane of 20 axis 21 can be constant, but with the increase of the value of angle [alpha] or absolute value, penetrate from rotatable target 20
Material out reaches the distance that substrate 100 is advanced and increases.Therefore, the relatively low angle [alpha] of higher angle [alpha] deposits less material
Material.
In addition, the incidence angle that material to be deposited reaches substrate 100 increases with the value of angle [alpha] or the increase of absolute value
Greatly, this energy for reducing ion bombardment.Growing film is locally influenced by controlling local ion bombardment energy and intensity, this effect
Structure, form and electrically or optically property.
According to embodiment, the power for being provided to three or more rotatable targets 20 changes, and has with compensation
The material of the angular position reduction of high angle α deposits.Particularly, the angle [alpha] of Angle Position is higher, and being provided to three or more can
The power of rotary target 20 is higher, and vice versa.When carrying out embodiment, especially if when magnet is mobile sputtering power with
The time and change, the uniformity of layer to be deposited can increase.
It as shown in Figure 5, can be symmetrical for changing the function for the power for being provided to three or more rotatable targets 20
Function.In addition, the function for changing the power for being provided to three or more rotatable targets 20 can be asymmetric step function.Citing
For, the function for changing the power for being provided to three or more rotatable targets 20 can be polynomial function, trigonometric function
And/or the combination of above-mentioned function.For example, power can change in the range from -2kW to 20kW, especially from 5kW to
Change in the range of 10kW.
In addition, magnet assembly 25 sustainably rotates (" waving ") between left maximum angle and right maximum angle.However,
As shown in Figure 6, other than changing power, the angular speed of magnet assembly 25 sustainably changes, to increase layer to be deposited
Uniformity.In addition, can be closed in practice when changing the angular speed of magnet assembly 25 constantly to replace change power
In the similar results of uniformity.
Value in view of angle [alpha] described herein and the relationship between the material of the angular position deposition with angle [alpha],
Constantly change magnet assembly in such a way that the angle [alpha] of the bigger absolute value of the angle [alpha] of smaller absolute value has higher angular speed
Angular speed can be advantageous.That is, magnet assembly 25 smaller absolute value angle [alpha] than the angle in larger absolute value
α rotation is fast.Therefore, compared to the Angle Position of the angle [alpha] with higher absolute value, there is smaller absolute value by reducing material
Angle [alpha] angular position deposition time or effective stay time, can compensate for smaller absolute value angle [alpha] angle
Higher deposition rate at position.
The function of angular speed for constantly changing magnet assembly 25 can be symmetric function.In addition, for constantly changing
The function for becoming the angular speed of magnet assembly 25 can be asymmetric step function.For example, for constantly changing magnet assembly 25
The function of angular speed can be the combination of polynomial function, trigonometric function and/or above-mentioned function.
Although the function for changing the power for being provided to three or more rotatable targets 20 can be open function upwards
(upwardly opened function) has larger on the vertical axis that is, for the larger absolute value on trunnion axis
Value, but the function of the angular speed for constantly changing magnet assembly 25 can be open function (downwardly open downwards
Function), open function downwards has lesser value about the larger absolute value on trunnion axis on the vertical axis.Citing comes
Say, angular speed can constantly change in the range from 0,5 °/s to 500 °/s, especially from 2 °/s to 200 °/range of s
In constantly change.
Fig. 7 is painted the other example of the function for changing the power for being provided to three or more rotatable targets 20.It is special
Not, Fig. 7 is painted for changing the asymmetric step function for the power for being provided to three or more rotatable targets 20.
In addition, Fig. 7 shows two different modes for changing the power for being provided to three or more rotatable targets 20.
The continuous function that solid line represents for changing the power for being provided to three or more rotatable targets 20, and it is independent in chart
The discrete function that point indicates for changing the power for being provided to three or more rotatable targets 20.Continuous function can be used in shaking
In the case where the magnet assembly of pendulum, i.e., the angular speed changed with constant angular velocity or constantly constantly rotary magnet component 25.
Discrete function can be used in the case where the magnet assembly 25 gradually rotated, i.e., magnet assembly 25 is gradually rotated from an Angle Position
To another Angle Position.
The angular speed of " lasting change " of term as used herein angular speed or " constantly changing " should particularly with by
The angular speed different from being altered in steps in the case where the magnet assembly 25 for walking rotation.Particularly, for gradually rotating, angle
Speed is moved to next angle from an Angle Position in magnet assembly when magnet assembly 25 stays in an Angle Position often zero
Predetermined value is jumped to when position.Such movement can be appreciated in particular that as non-continuous movement.Therefore, the residence time of magnet assembly can basis
Discrete function changes and/or the angular speed of magnet assembly can change according to continuous function.
According to embodiment, discrete function includes being more than four steps (step).Particularly, discrete function has more multistep, from
Scattered function is more similar to continuous function.Therefore, for application function into the coating machine for be used to execute method described herein come
It says, it can be advantageous for increasing step number simultaneously using discrete function with approximate continuous functions.
Fig. 8 is painted the other example and use of the function for changing the power for being provided to three or more rotatable targets 20
In the example of the function for the residence time for changing magnet assembly.
As outlined herein, magnet assembly 25 is when each step of magnet assembly 25 gradually rotated stops specific stop
Between.By change be used for magnet assembly 25 the residence time gradually rotated, can with constantly change the magnet group persistently rotated
The angular speed of part 25 reaches similar effect.It particularly, can be lower than larger exhausted in the residence time of the angle [alpha] of smaller absolute value
To the residence time of the angle [alpha] of value.That is, magnet assembly 25 smaller absolute value angle [alpha] than in larger absolute value
Angle [alpha] stops shorter time quantum.Therefore, smaller absolutely having compared to the Angle Position of the angle [alpha] with higher absolute value
The higher deposition rate of the angular position of the angle [alpha] of value can be by reducing the residence time in these angular position deposition materials
And it is compensated.It therefore, can be open function upwards for changing the function of the residence time of magnet assembly 25.For example, stop
It stays the time that can change in the range from 0.5s to 30s, particularly changes in the range from 2s to 10s.
According to implementations described herein, it is provided to the power of three or more rotatable targets 20 and one of following
It can be changed according to function：The residence time of magnet assembly 25 and the angular speed of magnet assembly 25 constantly changed.That is,
Be provided to three or more rotatable targets 20 power can in the case where gradually rotating residence time with magnet assembly 25
Change together, changes together with the lasting change of the angular speed of magnet assembly 25 in the case where magnet assembly 25 waved.Fig. 8
It is painted the combination of change and the change of residence time of the power for being provided to three or more rotatable targets 20.Therefore, function
May depend on multiple variables, can for multidimensional and/or including one or more subfunctions.
By combining power to change and time change (residence time or angular speed), the uniformity of layer to be deposited can be into one
Step increases.Further it is provided that rotatable target 20 power can technically be limited in can provide it is upper to the power of rotatable target 20
And/or in lower range.For example, can expectability using be not cathode assembly 10 technically as defined in be provided to rotatable target 20
Power value.Therefore, can be used the value for falling the power for being provided to rotatable target 20 within the specified scope, and with expected value
Deviation can be compensated by adjusting the value of residence time or angular speed.Particularly, provided that rotatable target 20 power
Be used in the specific Angle Position greater than prescribed limit, then this deviation can by longer dwell time for the specific Angle Position or
For the smaller angular rate compensation of the specific Angle Position, and vice versa.When carrying out embodiment, may achieve at reduction entirety
Manage the high yield of time and cost.
According to embodiment, processing chamber housing is provided.Particularly, processing chamber housing can be vacuum processing chamber.Processing chamber housing can
Including at least one cathode assembly described herein.In addition, processing chamber housing can be configured to execute as described herein for coating
The method of substrate.In general, processing chamber housing can be configured to for being coated with a substrate a time point.It can be one by one
It is coated with many substrates.
According to embodiment, at least three rotatable targets may be disposed to the rotatable target of the one-dimensional array of aligned transfer.It is logical
Often, the quantity of rotatable target is between 3 and 20, more typically between 8 and 16.
According to embodiment, rotatable target 20 can be equally spaced from one another.In general, the length of rotatable target 20 can be slightly
Ground is longer than the length of substrate to be coated.It additionally or alternatively, the region crossed over by rotatable target 20 on the width can be slightly
Ground is wider than the width of substrate." slightly " range between 100% and 110% is generally comprised.It is long to provide slightly larger coating
Degree/width helps avoid boundary effect.In general, cathode assembly is equidistantly positioned apart from substrate.
According to embodiment, three or more rotatable targets 20 can be arranged along arc.Arc may make rotatable target
20 are oriented than external rotatable target 20 close to substrate 100.This situation is schematically depicted in Fig. 9.Alternatively, limiting can revolve
The arc for turning the position of target 20 also may make external rotatable target 20 to be oriented than internal rotatable target 20 close to substrate
100.Scattering behavior depends on material to be sputtered.Therefore, according to application, i.e., according to material to be sputtered, by rotatable target 20
Homogenieity can actually be further increased by providing camber.The direction of arc may depend on application.
Additionally or alternatively, three or more rotatable targets 20 can between two adjacent rotatable targets 20 away from
It is arranged from the mode changed from internal rotatable target 20 to outer rotatable target 20.For example, adjacent outer rotatable target
The distance between 20 can be greater than adjacent the distance between inside rotatable target 20.Alternatively, adjacent outer rotatable target 20 it
Between distance be smaller than adjacent the distance between inside rotatable target 20.By making the distance of outer rotatable target 20 be less than phase
Adjacent the distance between inside rotatable target 20, outermost rotatable target 20 is moved into the inside of closer substrate.According to reality
Mode is applied, less material can be wasted.
In addition, Fig. 9 is painted the exemplary anode stick between cathode assembly, anode stub be can be used in described herein one
In a little embodiments.
It can be identical for all rotatable targets at least one following functions according to embodiment：It is provided to
The angular speed of the variation of the power of three or more rotatable targets, the variation of the residence time of magnet assembly and magnet assembly
Lasting variation.Alternatively, different functions can be used for different rotatable targets.
For example, relative to other rotatable targets 20, different functions be can be used in external or outermost rotatable
Target 20.Since the frequent sputter material of outermost rotatable target 20 is in the layer on a region of substrate 100, deposited in the region
It is the superposition of the material from less rotatable target 20 compared with the interior zone of substrate 100, therefore can be for external or most
External target 20 uses asymmetric step function, to compensate this deviation in asymmetric deposition.Therefore, for the inside with substrate 100
The region that the layer wherein deposited is the superposition of the material from less rotatable target 20 is compared in region, and function can have about function
The high value of rate, the high value about the residence time and/or the lower value about angular speed.
In the context of this application, " outside " rotatable target can be regarded as revolving for the edge for being disposed adjacent to substrate
Turn target, and " inside " rotatable target can be regarded as the rotatable target for the interior zone for being disposed adjacent to substrate.Particularly, work as title
When making " outside " rotatable target and " inside " rotatable target, " outside " rotatable target is than the closer substrate of " inside " rotatable target
Edge.In addition, " most external " rotatable target can be regarded as being arranged to than adjacent rotatable target closer to the edge of substrate
Rotatable target.
Figure 10 a and 10b are painted the comparison of the thickness of the film by traditional handicraft and process deposits described herein.Deposition makes
It is carried out with the rotatable target being arranged at the position of solid line being spaced apart with substrate.
Figure 10 a is schematically painted the wheel with traditional handicraft and two films measured later with process deposits described herein
It is wide.Y-axis indicates the linear module of the thickness for film, and x-axis indicates the linear module of the length for substrate.It can from Figure 10 a
See, the case where compared to traditional handicraft, by thickness of the film of process deposits described herein in the region between rotatable target 20
Degree and the thickness directly in the region below rotatable target have less deviation.
Figure 10 b is painted the statistical analysis of the deviation with traditional handicraft and with the thickness of the films of process deposits described herein.
From Figure 10 b as it can be seen that for compared to the technique described herein on right side is shown in, it is shown in the thickness of the traditional handicraft in left side
Deviation is higher.When carrying out embodiment, the uniformity of thickness degree can increase.
Figure 11 a and 11b are painted the comparison of the electrical property by traditional handicraft and the film for using process deposits described herein.
Deposition is carried out using the rotatable target being arranged at the position of solid line being spaced apart with substrate.
Figure 11 a is painted with two different traditional handicrafts and with three films measured after process deposits described herein
Profile.Y-axis indicates the linear module of the electrical property for film, and x-axis indicates the linear module of the length for substrate.From figure
For 10a as it can be seen that the case where compared to traditional handicraft, the electrical property of the shown film by process deposits described herein is more constant,
It is especially generally speaking more constant.
Figure 11 b is painted by two traditional handicrafts and by the deviation of the electrical property of the films of process deposits described herein
Statistical analysis.From Figure 11 b as it can be seen that compared to the technique described herein for being shown in right side, it is shown in the tradition of left side and middle side
The deviation of the electrical property of technique is higher.When carrying out embodiment, the uniformity of the electrical property of the layer of deposition can increase.
In the following, it is described that generating the embodiment of special high uniformity.
According to one aspect, provide it is a kind of for using at least one cathode assembly coated substrates method, described at least one
A cathode assembly has three or more rotatable targets, three or more rotatable targets respectively include the magnet group being located therein
Part.The method includes：Rotary magnet component to multiple and different Angle Positions relative to a plane, the plane is hung down from substrate
Directly extend to the axis of the corresponding rotatable target of three or more rotatable targets；And according to being stored in database or memory
In function change at least one following：When being provided to the stop of the power of three or more rotatable targets, magnet assembly
Between and magnet assembly the angular speed constantly changed.
According to embodiment, provide a kind of method for using at least one cathode assembly coated substrates, it is described at least
One cathode assembly has three or more rotatable targets, three or more described rotatable targets respectively include being located therein
Magnet assembly.The method includes：Rotary magnet component is to multiple and different Angle Positions, and magnet assembly is in these different angle positions
Setting has angle relative to a plane, and the plane can from the correspondence that substrate extends perpendicularly to three or more rotatable targets
The axis of rotary target；It is read from memory and is used for following functions of at least one：It is provided to three or more rotatable targets
The lasting variation of the angular speed of the variation of power, the variation of the residence time of magnet assembly and magnet assembly；And according to described
Function changes at least one following：Be provided to the power of three or more rotatable targets, the residence time of magnet assembly, with
And the angular speed of magnet assembly constantly changed.
According to embodiment, provide a kind of method for using at least one cathode assembly coated substrates, it is described at least
One cathode assembly has three or more rotatable targets, three or more described rotatable targets respectively include being located therein
Magnet assembly.The method includes：Rotary magnet component is more than four described to four different Angle Positions, magnet assembly is more than
There is angle relative to a plane in a different Angle Position, the plane extends perpendicularly to three or more from substrate can
The axis of the correspondence rotatable target of rotary target；It reads about in the stop of the magnet assembly for being more than four different Angle Positions
Between variation function；And the stop in the magnet assembly for being more than four different Angle Positions is changed according to the function
Time.
According to embodiment, provide a kind of method for using at least one cathode assembly coated substrates, it is described at least
One cathode assembly has three or more rotatable targets, three or more described rotatable targets respectively include being located therein
Magnet assembly.The method includes：Rotary magnet component is described flat to the four different Angle Positions that are more than relative to a plane
Face extends perpendicularly to the axis of the corresponding rotatable target of three or more rotatable targets from substrate；And according to being stored in data
Function in library changed for the residence time for being more than four different Angle Positions.
In general, the residence time is different for each different Angle Position.
According to embodiment, provide a kind of for executing the coating machine of method described herein.The coating machine may include
Memory, can be from the memory function reading.Particularly, the memory may include the look-up table (look-up of storage function
table)。
Methods disclosed herein and coating machine can be used in depositing materials on substrates.More particularly, the method and painting
Cloth machine provides the high uniformity of sedimentary, and therefore can be used for the production of display, such as flat-panel monitor, such as TFT.Changing
In the case where kind uniformity, as its further effect, integral material consumption can be reduced, this is special when using expensive material
It does not need.For example, the method and coating machine proposed can be used for depositing indium tin oxide in the production of flat-panel monitor
(ITO) layer.
According to certain embodiments, conductive layer manufacturing process and/or system are provided, the manufacturing process and/or system can
It is used to prepare electrode or busbar connector (especially in TFT), the manufacturing process and/or system respectively include the reality according to this paper
Apply the method and/or system of the coated substrates of mode.For example but not limited to this, and such conductive layer can be metal layer or saturating
Bright conductive layer, such as, but not limited to ITO (tin indium oxide) layer.For example, method described herein can be used to form in TFT
Active layer, such as active layer made of IGZO (indium gallium zinc) or including the active layer of IGZO.
For example, at least some embodiments of present disclosure can about the aluminium layer being formed on glass substrate or
IGZO layers of resistivity obtains high uniformity.For example, may achieve on the substrate area of 406mm x 355mm 0% with
Thickness deviation between 2% or between even 0.5% and ± 1.5%.In addition, on the substrate area of 406mm x 355mm
It may achieve the deviation of the electrical property between 2% and 8% or between even 5% and 7%.
In this disclosure, at least some figures are painted the schematic cross-section of coating system and substrate.It is at least some to be painted
Target be cylindrically shaped.In these figures, it is noted that when watching figure attentively, target is extended in paper and extended to outside paper.This
It is equally applicable to also shown schematically only be depicted as the magnet assembly of sectional element.Magnet assembly can be along the circle limited by cylindrical target
The whole length of column extends.Due to technical reason, magnet assembly typically extends at least the 100% of body length, more typically
Extend at least the 105% of body length.
Although foregoing teachings are directed to the embodiment of present disclosure, in the base region for not departing from present disclosure
In the case of, it can be designed other and further embodiment of present disclosure, and scope of the present disclosure by appended
Claims determine.
Claims (15)
1. one kind is for the method using at least one cathode assembly (10) coated substrates (100), at least one described cathode sets
Part (10) has three or more rotatable targets (20), three or more described rotatable targets respectively include the magnetic being located therein
Body component (25), the method includes：
Rotate the magnet assembly (25) to multiple and different Angle Positions relative to plane (22), the plane (22) is from institute
State the axis (21) that substrate (100) extends perpendicularly to the corresponding rotatable target of three or more rotatable targets (20)；With
And
Change at least one following according to the function being stored in database or memory：Be provided to it is described three or more
The power of a rotatable target (20), the residence time of the magnet assembly (25) and the magnet assembly (25) are constantly
The angular speed of change.
2. the method as described in claim 1, wherein being provided to the power of three or more rotatable targets (20)
Changed with one of following according to the function：The residence time of the magnet assembly (25) and the magnet assembly (25)
The angular speed constantly changed.
3. further comprising such as described in any item methods of preceding claims：
It is read from the database or the memory and is used for following functions of at least one：It is provided to described three
Or more the variation of the power of rotatable target (20), the variation of the residence time of the magnet assembly (25), Yi Jisuo
State the lasting variation of the angular speed of magnet assembly (25).
4. as preceding claims described in any item methods, wherein the function include polynomial function and/or its
Described in function include trigonometric function.
5. such as described in any item methods of preceding claims, wherein the function includes symmetric function,
6. such as described in any item methods of preceding claims, wherein the function includes asymmetric step function.
7. such as described in any item methods of preceding claims, wherein the function is determined in the plurality of different Angle Position
Place is sputtered in the amount of the material on the substrate (100).
8. such as described in any item methods of preceding claims, wherein the function on the substrate (100) for sputtering
Conforming layer.
9. such as described in any item methods of preceding claims, wherein the database includes look-up table.
10. such as described in any item methods of preceding claims, wherein the function is the function depending on the Angle Position.
11. such as described in any item methods of preceding claims, wherein the function be depend on it is described three or more
The function of individual rotatable targets (20) of rotatable target (20).
12. such as described in any item methods of preceding claims, wherein the magnet assembly (25) is with the angular speed greater than zero
It rotates to the plurality of different Angle Position.
13. such as described in any item methods of preceding claims, wherein the function includes for changing the residence time
Discrete function, particularly wherein three or more described rotatable targets (20) revolve in a step-wise fashion according to the discrete function
Go to the plurality of different Angle Position.
14. one kind is for the method using at least one cathode assembly (10) coated substrates (100), at least one described cathode sets
Part (10) has three or more rotatable targets (20), three or more described rotatable targets respectively include the magnetic being located therein
Body component (25), the method includes：
It rotates the magnet assembly (25) and is more than four different Angle Positions, the plane (22) to relative to plane (22)
The axis of the corresponding rotatable target of three or more rotatable targets (20) is extended perpendicularly to from the substrate (100)
(21)；And
Changed according to the function being stored in database or memory in the magnet for being more than four different Angle Positions
The residence time of component (25).
15. a kind of for using the coating machine of described in any item method coated substrates such as claim 1 to 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011084003.XA CN112575301B (en) | 2016-04-21 | 2016-04-21 | Method for coating a substrate and coater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/058896 WO2017182081A1 (en) | 2016-04-21 | 2016-04-21 | Method for coating a substrate and coater |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011084003.XA Division CN112575301B (en) | 2016-04-21 | 2016-04-21 | Method for coating a substrate and coater |
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| CN108884556A true CN108884556A (en) | 2018-11-23 |
| CN108884556B CN108884556B (en) | 2020-11-03 |
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| CN201680084352.7A Active CN108884556B (en) | 2016-04-21 | 2016-04-21 | Method for coating substrate and coater |
| CN202011084003.XA Active CN112575301B (en) | 2016-04-21 | 2016-04-21 | Method for coating a substrate and coater |
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| CN202011084003.XA Active CN112575301B (en) | 2016-04-21 | 2016-04-21 | Method for coating a substrate and coater |
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| Country | Link |
|---|---|
| JP (1) | JP2019519673A (en) |
| KR (2) | KR102337787B1 (en) |
| CN (2) | CN108884556B (en) |
| TW (1) | TWI627300B (en) |
| WO (1) | WO2017182081A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109487225A (en) * | 2019-01-07 | 2019-03-19 | 成都中电熊猫显示科技有限公司 | Magnetron sputtering film formation device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7171270B2 (en) * | 2018-07-02 | 2022-11-15 | キヤノン株式会社 | Film forming apparatus and film forming method using the same |
| US11462394B2 (en) | 2018-09-28 | 2022-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Physical vapor deposition apparatus and method thereof |
| KR102443757B1 (en) * | 2019-05-28 | 2022-09-15 | 가부시키가이샤 알박 | Sputtering device, thin film manufacturing method |
| KR102785672B1 (en) | 2020-07-08 | 2025-03-26 | 가부시키가이샤 아루박 | Tabernacle method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108884556B (en) | 2020-11-03 |
| KR102337787B1 (en) | 2021-12-08 |
| TWI627300B (en) | 2018-06-21 |
| JP2019519673A (en) | 2019-07-11 |
| KR20210014777A (en) | 2021-02-09 |
| TW201805462A (en) | 2018-02-16 |
| KR20180137536A (en) | 2018-12-27 |
| CN112575301B (en) | 2023-05-23 |
| CN112575301A (en) | 2021-03-30 |
| WO2017182081A1 (en) | 2017-10-26 |
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