KR20160148449A - 경화성 수지 조성물, 광학 소자 및 광반도체 장치 - Google Patents
경화성 수지 조성물, 광학 소자 및 광반도체 장치 Download PDFInfo
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- KR20160148449A KR20160148449A KR1020160066386A KR20160066386A KR20160148449A KR 20160148449 A KR20160148449 A KR 20160148449A KR 1020160066386 A KR1020160066386 A KR 1020160066386A KR 20160066386 A KR20160066386 A KR 20160066386A KR 20160148449 A KR20160148449 A KR 20160148449A
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- C08G77/08—Preparatory processes characterised by the catalysts used
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Abstract
실온에서 액체인 특정 구조를 가지는 알콕시 올리고머 20~85질량%와, 실온에서 고체인 실리콘 레진 15~80질량%를 포함하는 것을 특징으로 하는 경화성 수지 조성물이며, 상기 알콕시 올리고머와 실리콘 레진의 합계량 100질량부에 대하여, 경화 촉매로서 인산을 0.1~20질량부 포함하는 경화성 수지 조성물이 바람직하다.
Description
도 2는 본 발명의 실시형태에 따른 경화성 수지 조성물이 적용된 패키지형 자외선 LED의 개략 구성도이다.
도 3은 본 발명의 실시예 1에 따른 경화성 수지 조성물의 투과율 측정 결과를 나타내는 그래프이다.
도 4는 본 발명의 실시예 1에 따른 경화성 수지 조성물의 발광 강도의 측정 결과를 나타내는 그래프이다.
101…기판
102a, 202a…정극 패턴
102b, 202b…부극 패턴
103, 203…LED 다이
103a, 203a…출사면
104, 204a, 204b…본딩 와이어
105…프레임재
106…고화체
210…케이스
210a…바닥부
Claims (12)
- 실온에서 액체인 알콕시 올리고머 20~85질량%와, 실온에서 고체인 실리콘 레진 15~80질량%를 포함하고,
상기 알콕시 올리고머가 오가노폴리실록세인 구조를 가지는 것이며,
하기 일반식(1)
(R1R2R3SiO1 /2) (1)
(단, R1, R2 및 R3은 각각 독립된 동일 또는 각각 상이한 유기기이다.)으로 표시되는 구성 단위,
하기 일반식(2)
(R4R5SiO2 /2) (2)
(단, R4 및 R5는 각각 독립된 동일 또는 각각 상이한 유기기이다.)으로 표시되는 구성 단위,
하기 일반식(3)
(R6SiO3 /2) (3)
(단, R6은 유기기이다.)으로 표시되는 구성 단위 및
하기 일반식(4)
(SiO4 /2) (4)
으로 표시되는 구성 단위로부터 선택되는 1종 이상의 구성 단위를 가짐과 아울러,
하기 일반식(5)
(R7 a(OR8)3 - aSiO1 /2) (5)
(단, a는 0, 1 또는 2이며, R7 및 R8은 각각 독립된 동일 또는 각각 상이한 유기기이며, R7 또는 R8이 복수 포함되는 경우에는, 각 R7 또는 R8은 서로 동일해도 되고 상이해도 된다.)으로 표시되는 구성 단위,
하기 일반식(6)
(R9 b(OR10)2 - bSiO2 /2) (6)
(단, b는 0 또는 1이며, R9 및 R10은 각각 독립된 동일 또는 각각 상이한 유기기이며, R10이 복수 포함되는 경우에는, 각 R10은 서로 동일해도 되고 상이해도 된다.)으로 표시되는 구성 단위 및
하기 일반식(7)
((OR11)SiO3 /2) (7)
(단, R11은 유기기이다.)으로 표시되는 구성 단위로부터 선택되는 1종 이상의 구성 단위를 가지고,
알콕시 올리고머를 구성하는 전체 실록세인 단위를 100몰%로 한 경우에, 일반식(1)~일반식(7)으로 표시되는 구성 단위를 90~100몰% 포함하는
것을 특징으로 하는 경화성 수지 조성물. - 제 1 항에 있어서, 상기 알콕시 올리고머와 실리콘 레진의 합계량 100질량부에 대하여, 경화 촉매로서 인산을 0.1~20질량부 포함하는 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 또는 제 2 항에 있어서, 상기 알콕시 올리고머에 포함되는 알콕실기량이 10~30질량%인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 상기 경화성 수지 조성물을 경화하여 얻어지는 고화체의 경화 수축량이 10질량% 이하인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 경화성 수지 조성물을 경화하여 얻어지는 고화체에 대하여 발광 강도 100W/cm2의 자외광을 500시간 조사했을 때에, 상기 고화체의 상기 자외광에 대한 투과율이 85% 이상인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 경화성 수지 조성물을 경화하여 얻어지는 고화체에 대하여 발광 강도 100W/cm2의 자외광을 1000시간 조사했을 때에, 상기 고화체의 상기 자외광에 대한 투과율이 85% 이상인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 경화성 수지 조성물을 경화하여 얻어지는 고화체에 대하여 발광 강도 100W/cm2의 자외광을 5000시간 조사했을 때에, 상기 고화체의 상기 자외광에 대한 투과율이 80% 이상인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 7 항 중 어느 한 항에 있어서, 상기 자외광의 발광 피크 파장이 365nm인 것을 특징으로 하는 경화성 수지 조성물.
- 제 1 항 내지 제 8 항 중 어느 한 항에 기재된 경화성 수지 조성물의 경화물로 이루어지는 것을 특징으로 하는 광학 소자.
- 제 1 항 내지 제 8 항 중 어느 한 항에 기재된 경화성 수지 조성물에 의해 밀봉된 광반도체 소자를 가지는 것을 특징으로 하는 광반도체 장치.
- 제 9 항에 기재된 광학 소자를 가지는 것을 특징으로 하는 광반도체 장치.
- 제 10 항에 있어서, 상기 광반도체 소자가 자외역의 광을 발하는 것인 것을 특징으로 하는 광반도체 장치.
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JP2003277473A (ja) | 2002-03-26 | 2003-10-02 | Japan Epoxy Resin Kk | Led封止材用エポキシ樹脂組成物及びled装置 |
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