KR20150058961A - Organic light emitting diode display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to an organic light emitting diode (OLED) display device capable of preventing light leakage in a non-emission region and a method of manufacturing the same, wherein the organic light emitting diode display device includes first, second and third sub- A substrate having pixels; A color filter formed in an emission region of each of the sub-pixels; A first overcoat layer formed on the entire surface of the substrate to cover the color filter; A light blocking pattern formed on the first overcoat layer and formed in a non-light emitting region between adjacent sub pixels; A second overcoat layer formed on the entire surface of the substrate so as to cover the light shielding pattern; And an organic light emitting cell formed on the first overcoat layer to overlap with the color filter.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device capable of preventing light leakage in a non-emission region and a method of manufacturing the same.

The image display device that implements various information on the screen is a key technology in the era of information and communication, and it is progressing in the direction of being thinner, lighter, more portable, but higher performance. An organic light emitting diode (OLED) display device that controls the amount of emitted light of an organic light emitting layer using a flat panel display device has recently been attracting attention as a flexible display capable of bending due to space and convenience.

The organic light emitting diode display device includes a substrate on which a thin film transistor (TFT) is formed, an organic light emitting cell formed on the substrate, and an encapsulation layer formed to cover the organic light emitting cell. The thin film transistor is formed for each sub pixel, and the organic light emitting cell is connected to the thin film transistor formed in each sub pixel.

The organic light emitting cell includes a first electrode, a second electrode, and a light emitting layer formed between the first electrode and the second electrode. Electrons and holes are injected and transferred into the light emitting layer by applying an electric field to the first electrode and the second electrode, and electrons and holes paired in the light emitting layer emit light while falling from the excited state to the ground state.

In a general organic light emitting diode display device, a thin film transistor is formed on a substrate, and a color filter is formed on a protective film covering the thin film transistor. An overcoat layer is formed to cover the color filter, and an organic light emitting cell including a first electrode, an organic light emitting layer, and a second electrode is formed on the overcoat layer.

The light emitted from the organic light emitting layer sequentially passes through the first electrode, the color filter, and the substrate, and is emitted to the outside. However, the light travels between the first electrode and the bank insulating film and is reflected by the opaque metal such as the second electrode, Lt; / RTI > As a result, the image quality of the display device is deteriorated.

An object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same that can prevent light leakage in a non-light emitting region by forming a light shielding pattern in a non-light emitting region. .

According to an aspect of the present invention, there is provided an organic light emitting diode display device including: a substrate having first, second, and third sub-pixels arranged in a row; A color filter formed in an emission region of each of the sub-pixels; A first overcoat layer formed on the entire surface of the substrate to cover the color filter; A light blocking pattern formed on the first overcoat layer and formed in a non-light emitting region between adjacent sub pixels; A second overcoat layer formed on the entire surface of the substrate so as to cover the light shielding pattern; And an organic light emitting cell formed on the first overcoat layer to overlap with the color filter.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display device, including: preparing a substrate having first, second, and third sub-pixels arranged in a row; Forming a color filter in an emission region of each of the sub-pixels; Forming a first overcoat layer over the entire surface of the substrate to cover the color filter; Forming a light-shielding pattern on the first overcoat layer so as to correspond to a non-light-emitting region between adjacent sub-pixels; Forming a second overcoat layer on the entire surface of the substrate so as to cover the light shielding pattern; And forming an organic light emitting cell on the first overcoat layer so as to overlap with the color filter.

The light-shielding pattern is formed so as to overlap the data line formed in the non-emission region between the sub-pixels with the first overcoat layer interposed therebetween.

The light shielding pattern is formed so as to completely cover the data line.

The edge of the light-shielding pattern is located between the edge of the data line and the light-emitting region, and the edge of the light-shielding pattern is separated from the edge of the data line by at least 1 mu m or more.

The first overcoat layer is formed of a photoactive compound (PAC).

In the organic light emitting diode display device and the method of manufacturing the same of the present invention, the light shielding pattern is formed in the non-light emitting region, so that the light shielding in the non-light emitting region is prevented by the light shielding pattern. Particularly, the light shielding pattern is formed so as to overlap the data lines formed in the non-light emitting region between the adjacent sub-pixels, so that generation of light spots in the vicinity of the data lines can be prevented.

1A is a plan view of an organic light emitting diode display device of the present invention.
1B is a cross-sectional view taken along line I-I 'of FIG. 1A.
2A is a plan view of an organic light emitting diode display device in which a light shielding pattern of the present invention is formed so as to overlap with two data lines.
2B is a cross-sectional view taken along line I-I 'of FIG. 2A.
3A to 3G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device of the present invention.

Hereinafter, the organic light emitting diode display device of the present invention will be described in detail with reference to the accompanying drawings.

1A is a plan view of an organic light emitting diode display device of the present invention, and FIG. 1B is a cross-sectional view taken along line I-I 'of FIG. 1A.

As shown in FIGS. 1A and 1B, an organic light emitting cell 140 is formed on a substrate 100 having first, second, third, and fourth sub-pixels arranged in a row. In the drawing, the first, second, third, and fourth sub-pixels are red, green, blue, and white sub-pixels, respectively. The organic light emitting cell 140 is connected to a thin film transistor formed in a TFT region of the substrate 100. The thin film transistor includes a switching thin film transistor and a driving thin film transistor.

Green, and blue color filters 125R, 125G, and 125B are formed in the emission regions of the red, green, and blue sub-pixels, respectively, and no color filter is formed in the white sub-pixels. Each sub-pixel is defined by intersecting the data line and the gate line, and the remaining region excluding the light emitting region of the substrate is a non-light emitting region, and the non-light emitting region includes a TFT region formed with a thin film transistor (TFT).

Though not shown, the thin film transistor formed in the TFT region of the substrate 100 includes a gate electrode, a gate insulating film 115, a semiconductor layer, a source electrode, and a drain electrode. At this time, the gate electrode is protruded from the gate line GL, or defined as a partial region of the gate line GL. The source electrode and the drain electrode are formed on the gate insulating film 115, the source electrode is protruded from the data line DL, and the drain electrode is formed apart from the source electrode.

The thin film transistor is selected from an amorphous silicon thin film transistor, an oxide thin film transistor, an organic thin film transistor, and a polycrystalline silicon thin film transistor. The amorphous silicon thin film transistor uses amorphous silicon as a semiconductor layer, and the oxide thin film transistor uses an oxide such as IGZO (indium gallium zinc oxide), ZnO (zinc oxide), and TiO (titanium oxide) as a semiconductor layer. In this case, the oxide thin film transistor further includes an etching blocking layer, which can prevent the semiconductor layer from being damaged when forming the source and drain electrodes. The organic thin film transistor uses an organic material as a semiconductor layer, and the polycrystalline silicon thin film transistor uses polycrystalline silicon as a semiconductor layer.

Green and blue color filters 125R and 125G are formed on the passivation layer 120 so as to correspond to the emission regions of red, green and blue sub-pixels, respectively, so that the passivation layer 120 covers the entire surface of the substrate 100, , 125B are formed. White light emitted from the organic light emitting cells 140 through the red, green, and blue color filters 125R, 125G, and 125B emits light of various colors. In a white sub-pixel in which no color filter is formed, 140 are implemented as they are.

The first overcoat layer 130a is formed on the entire surface of the substrate 100 so as to cover the red, green, and blue color filters 125R, 125G, and 125B. The first overcoat layer 130a is formed of an organic insulating material to planarize the upper surface of the substrate 100. [

A light shielding pattern 135 is formed on the first overcoat layer 130a. The light shielding pattern 135 is formed so as to correspond to the non-light emitting area. As described above, most of the light emitted from the organic light emitting cell 140 is emitted to the outside through the color filter, but some light is reflected from the opaque metal of the organic light emitting cell 140 and is emitted to the non-light emitting region.

Accordingly, the present invention has a light shielding pattern 135 formed on the first overcoat layer 130a, which is formed of an opaque metal such as copper (Cu), chromium (Cr) or the like, to prevent light spots in the non- . It is preferable that the light shielding pattern 135 is formed to have a thickness of 1500 ANGSTROM to 2000 ANGSTROM and is formed to have a width wider than the width of the data line DL between adjacent sub pixels to be formed to completely cover the data line DL.

The light shielding pattern 135 is formed only in the non-light emitting region, and the edge of the light shielding pattern 135 is provided between the edge of the data line DL and the light emitting region. The distance d between the edge of the light-shielding pattern 135 and the edge of the data line DL is at least 1 mu m or more in consideration of the alignment margin of the light-shielding pattern 135 and the data line DL. Further, it is preferable that the edge of the light-shielding pattern 135 is at least 1 mu m or more apart from the light-emitting region.

The second overcoat layer 130b is formed on the entire surface of the substrate 100 so as to cover the light-shielding pattern 135 as described above. The second overcoat layer 130b is provided to prevent the first electrode 140a from being connected to the light shielding pattern 135. [ An organic light emitting cell 140 connected to the thin film transistor is formed on the second overcoat layer 130b.

The organic light emitting cell 140 includes a first electrode 140a, an organic light emitting layer 140b and a second electrode 140c sequentially stacked on the first electrode 140a and a part of the first electrode 140a on the first electrode 140a. The bank insulating film 145 having the bank holes to be exposed distinguishes adjacent sub-pixels.

The first electrode 140a is electrically connected to a drain electrode (not shown) exposed through a drain contact hole (not shown) formed by selectively removing the protective film 120, the first and second overcoat layers 130a and 130b, Respectively. The first electrode 140a may be formed of an oxide such as tin oxide (ITO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide Tin Zinc Oxide (ITZO) or the like.

The organic light emitting layer 140b is formed on the first electrode 140a exposed by the bank insulating film 145 and the bank insulating film 145. [ The organic light emitting layer 140b is formed of a white organic material. A second electrode 140c is formed on the organic light emitting layer 140b. The second electrode 140c is a cathode formed of a reflective metal such as aluminum to reflect the light generated in the organic light emitting layer 140b toward the substrate 100. [

When a voltage is applied between the first electrode 140a and the second electrode 140c, the holes from the first electrode 140a to the second electrode 140c are emitted from the organic light emitting 140 cell. Electrons are injected and recombined in the organic light emitting layer 140b to form an exciton. The light emitted as the excitons drop to the ground state passes through the red, green, and blue color filters 125R, 125G, and 125B under the organic light emitting cells 140 to realize light corresponding to each color filter.

A part of the light emitted from the organic light emitting layer 140b is transmitted between the first electrode 140a and the bank insulating layer 145 and then reflected by the opaque metal such as the second electrode 140c, . Therefore, light spots may be generated in the non-light emitting region and image quality may be deteriorated.

However, as described above, since the organic light emitting diode display of the present invention forms the light shielding pattern 135 in the non-light emitting region, the light shielding is blocked by the light shielding pattern 135. In particular, the shielding pattern 135 and the data line DL are overlapped with each other with the protective film 120 and the first overcoat layer 130a interposed therebetween.

Therefore, in order to prevent parasitic capacitance from occurring between the light-shielding pattern 135 and the data line DL, the first overcoat layer 130a is formed of an organic material having a low dielectric constant and is formed of a photoactive compound (PAC) . Also, the first overcoat layer 130a is formed to have a sufficient thickness, and the first overcoat layer 130a preferably has a thickness of 1 to 2 mu m.

In particular, the light shielding pattern 135 may be formed to overlap with the two data lines DL.

FIG. 2A is a plan view of an organic light emitting diode display device in which a light-shielding pattern of the present invention is formed so as to overlap with two data lines, and FIG. 2B is a cross-sectional view taken along line I-I 'of FIG. 2A.

As shown in FIG. 2A, the substrate 100 has first, second, third, and fourth sub-pixels arranged in a line. In the drawing, the first, second, third, and fourth sub- Green, blue, and white sub-pixels.

Two data lines DL are provided in parallel between the first and second sub-pixels, and two data lines DL are also provided between the third and fourth sub-pixels. The two data lines provided between the first and second sub-pixels apply data signals to the first and second sub-pixels, respectively. Likewise, the two data lines provided between the third and fourth sub- And the data signal is applied to the third and fourth sub-pixels.

In this case, since the two data lines DL are formed at regular intervals, the light emitted from the organic light emitting cells 140 is separated from the data lines DL through the spacing between the two data lines DL, Lt; / RTI >

2B, the light-shielding pattern 135 of the present invention is formed on the first overcoat layer 130a so as to correspond to the interval between the two data lines DL and the two data lines DL, Respectively. At this time, the width of the light-shielding pattern 135 is wider than the width of the two data lines DL and the spacing interval, and is formed to completely cover the two data lines DL.

Hereinafter, a manufacturing method of the organic light emitting diode display device of the present invention will be described in detail.

3A to 3G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device of the present invention.

First, as shown in FIG. 3A, thin film transistors are formed in the TFT regions of the first, second, third, and fourth sub-pixels of the substrate 100. The thin film transistor includes a gate electrode (not shown), a gate insulating film 115, a semiconductor layer (not shown), a source electrode (not shown) and a drain electrode (not shown). A source electrode (not shown) protrudes from the data line DL. In this case, one data line DL may be provided for each adjacent sub-pixel, or two data lines DL may be provided between the first and second sub-pixels, and two data lines DL may be provided between the third and fourth sub-pixels .

Next, as shown in FIG. 3B, a passivation layer 120 is formed on the entire surface of the substrate 100 to cover the thin film transistor. 3C, a color filter 125R is formed on the protective film 120 so as to correspond to the light emitting region of each sub pixel, and the red color filter is shown in the drawing. White light emitted from an organic light emitting cell (not shown) to be described later emits light of various colors through the red, green, and blue color filters to emit the light through the substrate 100, and in the white sub- The white light emitted from the organic light emitting cell (not shown) is implemented as it is.

As shown in FIG. 3D, a first overcoat layer 130a is formed on the entire surface of the substrate 100 so as to cover the color filter 125R. The first overcoat layer 130a is formed of an organic insulating material to planarize the upper surface of the substrate 100, and is formed to have a thickness of 1 to 2 mu m. 3E, a light shielding pattern 135 is formed on the first overcoat layer 130a. The light blocking pattern 135 is formed in the non-light emitting region to have a thickness of 1500 ANGSTROM to 2000 ANGSTROM to prevent light leakage in the non-light emitting region.

It is preferable that the light shielding pattern 135 is formed to have a width wider than the width of the data line DL between the adjacent sub pixels and is formed so as to completely cover the data line DL. Particularly, the light shielding pattern 135 is formed only in the non-light emitting region, and the edge of the light shielding pattern 135 is provided between the edge of the data line DL and the light emitting region. The distance d between the edge of the light-shielding pattern 135 and the edge of the data line DL is at least 1 mu m or more in consideration of the alignment margin of the light-shielding pattern 135 and the data line DL. Further, it is preferable that the edge of the light-shielding pattern 135 is at least 1 mu m or more apart from the light-emitting region.

On the other hand, as described above, when two data lines DL are provided in parallel between the first and second sub-pixels and between the third and fourth sub-pixels, the light-shielding pattern 135 is divided into two data lines DL ) And the two data lines DL, as shown in FIG.

Next, as shown in FIG. 3F, a second overcoat layer 130b is formed on the entire surface of the substrate 100 so as to cover the light shielding pattern 135. FIG. The second overcoat layer 130b prevents the first electrode (not shown) and the light-shielding pattern 135 from being connected to each other.

The second overcoat layer 130b may be formed of the same material as that of the first overcoat layer 130a and may be formed to have the same thickness as the first overcoat layer 130a. Although not shown, after the second overcoat layer 130b is formed, the protective film 120, the first and second overcoat layers 130a and 130b are selectively removed to expose the drain electrode of the thin film transistor, Thereby forming a hole.

3G, an organic light emitting cell 140 including a first electrode 140a, an organic light emitting layer 140b, and a second electrode 140c is formed on the overcoat layer 180. Then, The first electrode 140a is connected to the drain electrode through the drain contact hole. In particular, the first electrode 140a may include at least one selected from the group consisting of tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide ITZO), and the like. The light emitted from the organic light emitting layer 140b passes through the first electrode 140a and is emitted through the substrate 100.

The bank insulating film 145 having the bank holes exposing a part of the first electrode 140a divides the adjacent sub-pixels. The organic light emitting layer 140b is formed on the entire surface of the bank insulating film 145 including the bank holes. The organic light emitting layer 140b may be formed on the entire surface of the substrate 100 as shown in FIG. 1 or may be formed only on the first electrode 140a exposed by the bank insulating layer 145 as shown in FIG.

The white light emitted from the organic light emitting layer 140b sequentially passes through the first electrode 140a, the color filter 125R, and the substrate 100 and is emitted to the outside. The second electrode 140c is formed to cover the organic light emitting layer 140b. The second electrode 140c is a cathode formed of a reflective metal such as aluminum to reflect white light emitted from the organic light emitting layer 140b toward the first electrode 140a.

Since the light-shielding pattern 135 is formed in the non-emission region, the light leakage in the non-emission region is prevented by the light-shielding pattern 135 and the image quality is improved do. At this time, the shielding pattern 135 is formed in the non-emission region between the adjacent sub-pixels and is formed so as to be in parallel with the data line DL so as to overlap with the data line DL. Particularly, since the first overcoat layer having a low dielectric constant is provided between the shielding pattern 135 and the data line DL, parasitic capacitance can be prevented from being generated between the shielding pattern 135 and the data line DL .

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

DL: Data line GL: Gate line
100: substrate 115: gate insulating film
120: protective film 125R: red color filter
125G: Green color filter 125B: Blue color filter
130a: first overcoat layer 130b: second overcoat layer
135: Shading pattern 140: Organic light emitting cell
140a: first electrode 140b: organic light emitting layer
140c: second electrode 145: bank insulating film

Claims (10)

A substrate having first, second and third sub-pixels arranged in a row;
A color filter formed in an emission region of each of the sub-pixels;
A first overcoat layer formed on the entire surface of the substrate to cover the color filter;
A light blocking pattern formed on the first overcoat layer and formed in a non-light emitting region between adjacent sub pixels;
A second overcoat layer formed on the entire surface of the substrate so as to cover the light shielding pattern; And
And an organic light emitting cell formed on the first overcoat layer to overlap with the color filter. The method according to claim 1,
Wherein the light-shielding pattern overlaps the data line formed in the non-emission region between the sub-pixels with the first overcoat layer interposed therebetween. 3. The method of claim 2,
Wherein the shielding pattern is formed to completely cover the data line. The method of claim 3,
Wherein an edge of the light shielding pattern is located between an edge of the data line and the light emitting region and an edge of the light shielding pattern is spaced apart from the edge of the data line by at least 1 mu m. The method according to claim 1,
Wherein the first overcoat layer is formed of a PAC (photoactive compound). Preparing a substrate having first, second and third sub-pixels aligned in a row;
Forming a color filter in an emission region of each of the sub-pixels;
Forming a first overcoat layer over the entire surface of the substrate to cover the color filter;
Forming a light-shielding pattern on the first overcoat layer so as to correspond to a non-light-emitting region between adjacent sub-pixels;
Forming a second overcoat layer on the entire surface of the substrate so as to cover the light shielding pattern; And
And forming an organic light emitting cell on the first overcoat layer so as to overlap with the color filter. The method according to claim 6,
Wherein the light shielding pattern is formed so as to overlap the data line formed in the non-emission region between the sub-pixels with the first overcoat layer interposed therebetween. 8. The method of claim 7,
Wherein the light-shielding pattern is formed to completely cover the data line. 9. The method of claim 8,
Wherein an edge of the light-shielding pattern is located between an edge of the data line and the light-emitting region, and an edge of the light-shielding pattern is spaced apart from the edge of the data line by at least 1 mu m or more. . The method according to claim 6,
Wherein the first overcoat layer is formed of a PAC (photoactive compound).

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