KR20140080468A - 투광도가 향상된 탠덤 태양전지 - Google Patents
투광도가 향상된 탠덤 태양전지 Download PDFInfo
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- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
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- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 8
- 239000003566 sealing material Substances 0.000 claims description 8
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- JJWJFWRFHDYQCN-UHFFFAOYSA-J 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylate;ruthenium(2+);tetrabutylazanium;dithiocyanate Chemical compound [Ru+2].[S-]C#N.[S-]C#N.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC.OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C([O-])=O)=C1.OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C([O-])=O)=C1 JJWJFWRFHDYQCN-UHFFFAOYSA-J 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001523 electrospinning Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- ZJYYHGLJYGJLLN-UHFFFAOYSA-N guanidinium thiocyanate Chemical compound SC#N.NC(N)=N ZJYYHGLJYGJLLN-UHFFFAOYSA-N 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
본 발명의 실시예에 따른 탠덤 태양전지는 직경이 20 nm 이하인 TiO2 입자로 이루어진 TiO2 광흡수층과 반사방지막 층에 의해 광산란 효과를 감소시켜, 광투과율을 증가시키고 낮은 두께로도 광전류를 얻을 수 있는 효과가 있다.
Description
도 2는 본 발명의 실시예에 따른 탠덤 태양전지에 사용되는 TiO2의 XRD 그래프.
도 3a는 본 발명의 비교예에 따른 탠덤 태양전지의 광전 특성을 보여주는 그래프.
도 3b는 본 발명의 실시예에 따른 탠덤 태양전지의 광전 특성을 보여주는 그래프.
102: 제 1 전극 103: CIGS 흡수층
104: 버퍼층 105: 금속 산화물층
106: 제 2 전극 200: DSSC 태양전지
201: 상부 유리기판 202: 하부 유리기판
207: 폴리머 반사방지막 층 208: 투명전극
209: 금속 촉매막 210: 밀봉재
211: 전해질층 213: TiO2 광흡수층
214: 일전극
Claims (10)
- 하부에 구비된 CIGS 태양전지;
상기 CIGS 태양전지의 상부에 구비된 DSSC 태양전지; 및
상기 CIGS 태양전지와 상기 DSSC 태양전지 사이에 구비된 반사방지막 층;
을 포함하고,
상기 CIGS 태양전지와 상기 DSSC 태양전지는 서로 전기적으로 연결되어 적층 구비하는 탠덤 태양전지.
- 제 1 항에 있어서,
상기 CIGS 태양전지는
유리 기판;
상기 유리 기판에 형성된 제 1 전극;
상기 제 1 전극에 형성된 CIGS 흡수층;
상기 CIGS 흡수층에 형성된 버퍼층(buffer layer);
상기 버퍼층에 형성된 금속 산화물층; 및
상기 금속 산화물층에 형성된 제 2 전극;
을 포함하는 것을 특징으로 하는 탠덤 태양전지.
- 제 2 항에 있어서,
상기 DSSC 태양전지는
하부면 방향으로 투명전극과 재결합 방지층(blocking layer)으로 이루어진 일전극(working electrode)을 구비한 상부 유리기판;
상부면에 금속 촉매막을 형성한 투명전극을 구비한 하부 유리기판;
상기 금속 촉매막과 상기 일전극 사이의 외측 테두리에 형성된 밀봉재;
상기 밀봉재와 상기 금속 촉매막을 형성한 투명전극의 내부면에 구비된 전해질 층; 및
상기 재결합 방지층의 하부면과 상기 전해질 층에 의해 둘러싸여 염료를 흡착한 TiO2 광흡수층;
을 포함하는 것을 특징으로 하는 탠덤 태양전지.
- 제 2 항에 있어서,
상기 금속 산화물층은 진성 ZnO/Al-도핑된 ZnO(i-ZnO/AZO) 또는 진성 ZnO/B-도핑된 ZnO(i-ZnO/BZO)으로 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 3 항에 있어서,
상기 재결합 방지층은 TiO2, Nb-doped TiO2 및 Ta-doped TiO2 중 어느 하나로 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 3 항에 있어서,
상기 금속 촉매막은 백금(Pt), 팔라듐(Pd), 카본나노튜브(CNT) 및 그래핀(graphene) 중 어느 하나 또는 합금으로 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 3 항에 있어서,
상기 TiO2 광흡수층은 졸-겔(Sol-gel)법 또는 수열합성법(Hydrothermal)을 통해 5 nm 내지 15 nm의 입자크기를 갖도록 제조된 아나타제 상(anatase phase)의 TiO2를 이용하여 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 1 항에 있어서,
상기 반사방지막 층은 폴리(메틸 메타크릴레이트)(PMMA) 또는 폴리스타이렌(PS)으로 이루어진 유기 반사방지막으로 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 1 항에 있어서,
상기 반사방지막 층은 MgF2, SiO2, TiO2, ZrO2, Al2O3 및 MgF2 중 어느 하나 또는 합금으로 이루어진 무기 반사방지막으로 형성되는 것을 특징으로 하는 탠덤 태양전지.
- 제 3 항에 있어서,
상기 제 1 전극과 일전극을 도선으로 연결하고, 상기 제 2 전극과 상기 금속 촉매막을 형성한 투명전극을 도선으로 연결하는 것을 특징으로 하는 탠덤 태양전지.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101582349B1 (ko) * | 2014-10-16 | 2016-01-05 | (재)한국나노기술원 | 확장된 광흡수 영역을 포함하는 태양 전지 및 그 제조방법 |
US20180269341A1 (en) * | 2017-03-17 | 2018-09-20 | Kabushiki Kaisha Toshiba | Solar cell, multijunction solar cell, solar cell module, and solar power generation system |
CN112018207A (zh) * | 2020-08-14 | 2020-12-01 | 隆基绿能科技股份有限公司 | 一种透光复合层、叠层太阳能电池及其制备方法 |
-
2014
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101582349B1 (ko) * | 2014-10-16 | 2016-01-05 | (재)한국나노기술원 | 확장된 광흡수 영역을 포함하는 태양 전지 및 그 제조방법 |
US20180269341A1 (en) * | 2017-03-17 | 2018-09-20 | Kabushiki Kaisha Toshiba | Solar cell, multijunction solar cell, solar cell module, and solar power generation system |
CN108630765A (zh) * | 2017-03-17 | 2018-10-09 | 株式会社东芝 | 太阳能电池、多结型太阳能电池、太阳能电池模块以及太阳能发电系统 |
US11031512B2 (en) | 2017-03-17 | 2021-06-08 | Kabushiki Kaisha Toshiba | Solar cell, multijunction solar cell, solar cell module, and solar power generation system |
CN108630765B (zh) * | 2017-03-17 | 2022-01-25 | 株式会社东芝 | 太阳能电池、多结型太阳能电池、太阳能电池模块以及太阳能发电系统 |
CN112018207A (zh) * | 2020-08-14 | 2020-12-01 | 隆基绿能科技股份有限公司 | 一种透光复合层、叠层太阳能电池及其制备方法 |
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