KR20140080229A - Organic light-emitting diode display device and fabrication method of the same - Google Patents

Abstract

The present invention discloses an organic light emitting display. More particularly, the present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same that minimize defects caused by moisture permeation that may occur as a mask process is reduced in an OLED display panel having a flexible characteristic by using a plastic substrate .
The organic light emitting display according to an embodiment of the present invention includes a first auxiliary electrode pattern formed on a display region of the same material as the anode electrode and a second auxiliary electrode pattern formed on a non-display region, It is possible to solve the problem of lowering the reliability of the organic light emitting display device due to the moisture permeation.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same.

The present invention relates to an organic light emitting diode (OLED) display, and more particularly, to an organic light emitting diode (OLED) display device which minimizes defects caused by moisture permeation which can be caused by reduction of a mask process in an OLED display panel having flexible characteristics by using a plastic substrate, ≪ / RTI >

A flat panel display device proposed to replace a conventional cathode ray tube display device includes a liquid crystal display device, a field emission display device, a plasma display device, (Plasma Display Panel) and an organic light-emitting diode (OLED) display.

In the organic light emitting display, the organic light emitting diode provided in the display panel has a high luminance and low operating voltage characteristics, and is self-emitting type that emits light by itself. Therefore, the organic light emitting display has a high contrast ratio, It has the advantage that it can be implemented. In addition, the response time is as small as several microseconds (μs), the moving image is easy to implement, the viewing angle is not limited, and the characteristic is stable even at low temperatures.

1 is an equivalent circuit diagram of one pixel of a conventional OLED display panel.

As shown in the figure, the organic light emitting display panel includes a scan line SL and a data line DL and a power supply voltage supply line VDDL spaced apart from the scan line SL by a predetermined distance to form one pixel PX. define.

The switching TFT SWT applies a data signal corresponding to the scan signal to the first node N1. The switching TFT SWT applies a power supply voltage ELVDD to the source electrode of the switching TFT SWT according to the voltage applied to the first node N1. A driving thin film transistor DT for applying a drain current to an organic light emitting diode (OLED) in accordance with a voltage between the gate and the source, and a driving thin film transistor DT for applying a voltage applied to the gate electrode of the driving thin film transistor DT to 1 Lt; RTI ID = 0.0 > C1 < / RTI >

The organic light emitting diode OLED includes an anode electrode connected to the drain electrode of the driving thin film transistor DT, a cathode electrode ELVSS, and an organic light emitting layer formed between the cathode electrode and the anode electrode. The above-described organic luminescent layer may be composed of a hole transporting layer, a luminescent layer and an electron transporting layer.

The organic light emitting display having such a pixel structure is generally fabricated in a laminated structure using nine masks. 2A is a view showing a stacked structure of a general organic light emitting display device.

Referring to the drawings, a conventional OLED display includes a substrate 1, a semiconductor layer 2, a gate insulating film 3, a gate metal layer 4, an interlayer insulating film 5, a source / drain metal layer 6, the protective layer 7, the planarization layer 8, the anode metal layer 9, the bank 10, the cathode metal layer 11, the first passivation film 12, the organic film 13, And has a laminated structure of a film (14).

The masking step is omitted because the buffer layer 1, the gate insulating film 3, the first passivation film 12, the organic film 13 and the second passivation 14 do not require a patterning step, The masking process must be performed.

In recent years, an 8-mask process has been proposed in which the manufacturing process of the organic light emitting display device is simplified and the mask is reduced by omitting the protective layer 7 in order to lower the manufacturing cost. 2B is a cross-sectional view of an outer portion of the organic light emitting diode display in which the protective layer 7 is omitted.

2B, the organic light emitting display in which the protective layer is omitted includes a source / drain metal layer 6 and a planarization film 8 on a substrate 5 including a part of the structure of a thin film transistor (not shown) An anode metal layer 9 formed on the planarizing film 8 and exposed to the outer frame portion, a bank 10 formed on the anode metal layer 9 and an upper portion formed on the bank 10, A first passivation film 12 covering the whole surface of the substrate 5, an organic film 13 and an organic film 13 so as to cover the substrate 5 And a second passivation film 14 formed to cover the entire surface.

The conventional organic light emitting display in which the protective layer is omitted has a structure in which the planarization film 8 formed under the anode metal layer 9 is omitted and the anode metal layer 9 and the source / Moisture is generated at the interface between the two metal layers 6 and 9 and the moisture (w) is introduced into the two metal layers 6 and 9 and oxidized to deteriorate the reliability of the OLED display.

Drain metal layer 6 is exposed, the polyimide material and the source / drain metal layer 6 constituting the bank 10 are formed so as to cover the anode metal layer 9 and the source / The surface properties of the polyimide material and the anode metal layer 9 are different from each other in height, resulting in a new problem of stain failure.

SUMMARY OF THE INVENTION The present invention has been conceived in order to solve the above problems, and it is an object of the present invention to provide an organic light emitting diode display having improved reliability by preventing moisture permeation caused by an anode metal layer exposed in an outer- And a method for manufacturing the same.

According to an aspect of the present invention, there is provided an organic light emitting diode display comprising: a substrate defining a display region including a plurality of pixels and a non-display region surrounding the display region; At least one thin film transistor formed in the pixel on the substrate; A planarization film formed on the display region including the thin film transistor; First and second source-drain auxiliary electrode patterns formed on the non-display area; An anode electrode connected to a drain electrode of the thin film transistor; A first auxiliary electrode pattern formed on the display region with the same material as the anode electrode, and a second auxiliary electrode pattern formed on the non-display region; A bank formed in the periphery of each pixel region of the substrate including the anode electrode, the first and second auxiliary electrode patterns, and the non-display region; An organic light emitting layer formed separately on the anode electrode for each pixel region; A cathode electrode formed on the entire surface of the substrate including the organic light emitting layer; A first passivation film formed on the entire surface of the substrate including the cathode electrode; An organic film formed on the first passivation film; A second passivation film formed on the organic film and the first passivation film; A protective film facing the substrate; And a pressure-sensitive adhesive interposed between the substrate and the protective film.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, the method including forming a display region including a plurality of pixels and a non-display region surrounding the display region, Preparing a substrate; Forming at least one thin film transistor in the pixel on the substrate; Forming source and drain electrodes of the thin film transistor and the first and second source-drain auxiliary electrode patterns on the non-display region; Forming an anode electrode connected to the drain electrode; Forming a first auxiliary electrode pattern on the display region with the same material as the anode electrode and forming a second auxiliary electrode pattern on the non-display region; Forming a planarization film on the display region including the thin film transistor; Forming a bank in each of the pixel regions of the substrate including the anode electrode, the first and second auxiliary electrode patterns, and the non-display region; Separating and forming an organic light emitting layer for each pixel region on the anode electrode; Forming a cathode electrode on the entire surface of the substrate including the organic light emitting layer; Forming a first passivation film on the entire surface of the substrate including the cathode electrode; Forming an organic film on the first passivation film; Forming a second passivation film on the organic film and the first passivation film; And attaching a protective film using an adhesive to face the substrate.

According to an embodiment of the present invention, the anode metal layer formed on the outer portion of the organic light emitting diode display is patterned to prevent the anode metal pattern from being connected to the inside of the display device, thereby solving the problem of lowering the reliability of the OLED display There is an effect that can be.

1 is an equivalent circuit diagram of one pixel of a conventional OLED display panel.
2A is a view showing a stacked structure of a general organic light emitting display device.
2B is a cross-sectional view of an outer portion of the organic light emitting diode display in which the protective layer 7 is omitted.
3 is a schematic plan view of an OLED display according to a first embodiment of the present invention.
FIG. 4A is a view showing a structure of an anode metal layer formed on part A of the OLED display of FIG. 3, and FIG. 4B is a cross-sectional view taken along line III-III 'of FIG. 4A.
5A and 5B are a plan view and a cross-sectional view illustrating a portion of an OLED display according to a second embodiment of the present invention.
6A and 6B are a plan view and a cross-sectional view of a part of an OLED display according to a third embodiment of the present invention.
7A to 7G are views schematically showing a method of manufacturing an organic light emitting display according to the present invention.

Hereinafter, an organic light emitting display according to a preferred embodiment of the present invention and a method of manufacturing the same will be described with reference to the drawings.

3 is a schematic plan view of an OLED display according to a first embodiment of the present invention.

4A is a view showing a structure of an anode metal layer formed on part A of the organic light emitting diode display of FIG. 3, and FIG. 4B is a cross-sectional view taken along the line III-III 'of FIG. 4A.

3, 4A and 4B, an OLED display 100 according to an exemplary embodiment of the present invention includes a substrate 101 on which a thin film transistor T and an organic light emitting diode are formed, And is encapsulated by the structure.

The organic electroluminescent device 100 includes a substrate 101 having a display area A / A including a plurality of pixels PX and a non-display area N / A surrounding the display area A / A, A thin film transistor T formed on each pixel PX on the substrate 101 and a planarization film 113 formed on the substrate 101 including the thin film transistor T, An anode electrode 117 connected to the drain electrode 111b of the transistor T and a first auxiliary electrode pattern 119a extending a part of the anode electrode 117 and a second source- A third auxiliary electrode pattern 119c which is patterned to block the moisture introduced from the outside and a second auxiliary electrode pattern 119b which covers the anode 101a of the substrate 101 including the anode electrode 117, A bank 123 formed in the non-display region N / A around the pixel electrode PX and an organic light emitting layer 125 formed separately for each pixel PX on the anode electrode 117, A first passivation film 129 formed on the entire surface of the substrate 101 including the cathode electrode 127 and a second passivation film 129 formed on the entire surface of the substrate 101 including the light emitting layer 125. The first passivation film 129 A second passivation film 133 formed on the organic film 131 and the first passivation film 129 and a protective film 137 facing the substrate 101, And a pressure sensitive adhesive 135 interposed between the substrate 101 and the protective film 137 to bond the substrate 101 and the protective film 137 to form a panel state.

Hereinafter, the organic light emitting display 100 according to the present invention will be described in detail with reference to the drawings. The substrate 101 includes a display area A / A in which a plurality of pixels PX are formed, A non-display area N / A surrounding the display area A / A is defined in the outer part of the display area / A. Although not shown, a plurality of gate wirings (not shown) and data wirings (not shown) cross each other in the display area A / A, and a pixel PX is defined at the intersection. In addition, a power supply wiring (not shown) is formed in parallel with the data wiring.

Here, as the substrate 101, a plastic substrate having a flexible property can be used so that the display performance can be maintained even if the glass substrate or the display device of a rigid material is warped like paper.

A buffer layer (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, may be formed on the substrate 101. This buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 103 in the release of the alkali ions from the inside of the substrate 101 in the crystallization process of the semiconductor layer 103 formed in the subsequent process.

Each pixel PX in the display area A / A is formed of pure polysilicon on the upper side of the buffer layer (not shown), and its central part is divided into a first region 103a, a first region 103a, And a second region 103b or 103c doped with a high concentration of impurities.

A gate insulating film 105 is formed on the buffer layer including the semiconductor layer 103. A gate electrode 107 is formed on the gate insulating film 105 in correspondence with the first region 103a of the semiconductor layer 103 have. A gate wiring (not shown) extending in one direction is formed on the gate insulating film 105, connected to the gate electrode 107.

Gate drive circuit wirings and ground wirings 107a and the like are formed on the substrate 101 at the time of forming the gate electrode 107 and gate assisted electrode patterns 107b are formed in the non- .

Here, the gate electrode 107, the gate wiring, and the gate auxiliary electrode pattern 107b may be formed of a first metal material having low resistance characteristics, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu) , Molybdenum (Mo), and molybdenum (MoTi) and may have a single layer structure, or may be formed of two or more of the first metal materials to have a double layer structure or a triple layer structure.

An interlayer insulating film 109 (for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx)) as an insulating material is formed on the entire surface of the substrate 101 including the gate electrode 107 and the gate assistant electrode pattern 107b. Is formed. A semiconductor layer contact hole exposing the second regions 103b and 103c located on both sides of the first region 103a of the semiconductor layer 103 is formed in the interlayer insulating film 109 and the gate insulating film 105 below the interlayer insulating film 109 . At the same time as the semiconductor layer contact hole, a gate layer contact hole is formed on the gate assistant electrode pattern 107b.

The pixel PX is defined on the interlayer insulating film 109 including the semiconductor layer and the gate contact hole to intersect the gate line and a second metal material such as aluminum (Al), aluminum alloy (AlNd), copper Data wiring (not shown) and power supply wiring (not shown) made of any one or two or more materials selected from the group consisting of copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr), and titanium .

An upper portion of the interlayer insulating film 109 is connected to the source and drain electrodes 111a and 111b of the second metal material which are in contact with the second regions 103b and 103c exposed through the semiconductor layer contact holes, 111b are formed. At this time, the source electrode 111a and the drain electrode 111, which are formed separately from the semiconductor layer 103, the gate insulating film 105, the gate electrode 107, and the interlayer insulating film 109 sequentially stacked in the driving region (not shown) (111b) constitute a thin film transistor (T).

A first source-drain auxiliary electrode pattern 111c made of the same metal as the source electrode 111a and the drain electrode 111b and in contact with the gate assist electrode pattern 107b is formed on the non-display area N / A, And a second source-drain auxiliary electrode pattern 111d are formed. Thus, a signal such as a ground voltage applied to the gate assist electrode pattern 107b is applied to the second source-drain auxiliary electrode pattern 111d and the second auxiliary electrode pattern 119b, and the first source- And is supplied to the wiring or the like in the display area N / A through the pattern 111c.

In the figure, the source electrode 111a and the drain electrode 111b all have a single layer structure. However, these elements may be formed in a double layer structure or a triple layer structure.

Although the thin film transistor T has a semiconductor layer 103 of a low-temperature polysilicon and is formed of a top gate type as an example, the bottom gate type having a semiconductor layer of an amorphous silicon ). ≪ / RTI >

A planarization film 113 having a drain contact hole (not shown) exposing the drain electrode 111b is formed on the top of the thin film transistor T. [ As such a planarization film 113, any one of an insulating material, for example, an inorganic insulating material containing silicon oxide (SiO ₂ ) and silicon nitride (SiNx), or an organic insulating material containing photo- Can be manufactured by selecting any one of them.

A drain contact hole (not shown) for electrically contacting the anode electrode 117 formed in the subsequent process with the drain electrode 111b is formed in the planarization film 113 corresponding to the display region of the substrate 101 have.

An anode electrode 117 is formed on the planarization film 113 so as to be in contact with the drain electrode 111b of the thin film transistor T through the drain contact hole and separated from each pixel PX. An auxiliary electrode pattern 119a is formed on the planarization film 113 to reduce a resistance value of the cathode electrode 127 formed in a subsequent process. Since the cathode electrode 127 is formed of a transparent conductive material and thus has a large resistance value, it is not effective in uniformly applying a constant current. In order to lower the resistance value of the cathode electrode 127, And the cathode electrode 127 are electrically connected to each other to reduce the resistance value. At this time, the first auxiliary electrode pattern 119a is electrically connected to the cathode electrode 127. Although not shown, the first auxiliary electrode pattern 119a is electrically connected to the ground wiring via a ground wiring contact hole (not shown).

In addition, the second auxiliary electrode pattern 119b and the third auxiliary electrode pattern 119c are formed of the same metal as the anode electrode 117 on the non-display area N / A. The second auxiliary electrode pattern 119b is in contact with the second source-drain auxiliary electrode pattern 111d in a concavo-convex shape to prevent the second source-drain auxiliary electrode pattern 111d from being exposed, The problem that the height of the bank 123 layer varies depending on the material characteristics between the drain auxiliary electrode pattern 111d and the polyimide is prevented.

In particular, the second auxiliary electrode pattern 119b and the second source-drain auxiliary electrode pattern 107b are formed so as to engage with each other in a concave-convex shape so as to primarily block moisture flowing into the interface thereof.

The third auxiliary electrode pattern 119c is formed in the form of a partition wall between the second auxiliary electrode pattern 119b and the display area A / A on the non-display area N / A, . As shown in FIG. 4A, the third auxiliary electrode pattern 119c has a slit-shaped structure (B portion) in which a plurality of patterns are arranged side by side in a parallel direction when viewed in a plan view.

A bank 123 made of an insulating material, particularly a polyimide, is formed on the boundary of the pixel PX and the non-display area N / A on the upper side of the anode electrode 117. At this time, the bank 123 is formed so as to overlap the rim of the anode electrode 117 in the form of surrounding the pixel PX, and has a lattice shape having a plurality of openings as a whole in the display region A / A. In addition, the bank 123 is also formed in the non-display area N / A.

An organic light emitting layer 125 is formed on the anode electrode 117 in the pixel PX surrounded by the banks 123. The organic light emitting layer 125 includes organic light emitting patterns (not shown) emitting red, green, and blue light, respectively. The organic light emitting layer 125 may be formed of a single layer made of an organic light emitting material or may include a hole injection layer, a hole transporting layer, a light emitting material layer emitting material layer, an electron transporting layer, and an electron injection layer.

A cathode electrode 127 is formed in the display region A / A of the substrate 101 including the organic luminescent layer 125 and the banks 123. The organic light emitting layer 125 interposed between the anode electrode 117 and the cathode electrode 127 and between the two electrodes 117 and 127 forms an organic light emitting diode (not shown). The cathode electrode 127 is electrically connected to the first auxiliary electrode pattern 119a.

Therefore, when a predetermined voltage is applied to the anode electrode 117 and the cathode electrode 127 according to a selected color signal, the organic light emitting diode receives the holes injected from the anode electrode 117 and electrons injected from the cathode electrode 127 Is transported to the organic light emitting layer 125 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted as a visible light. At this time, the emitted light passes through the transparent cathode electrode 127 and exits to the outside, so that the OLED display 100 realizes an arbitrary image.

A first passivation film 129 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the cathode electrode 127.

An organic layer 131 made of a polymer organic material such as a polymer is formed on the first passivation layer 129. As the polymer thin film constituting the organic film 131, an olefin polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, Can be used.

In order to prevent moisture from penetrating through the organic film 131, an insulating material such as silicon oxide (SiO ₂ , for example, inorganic insulating material) is formed on the entire surface of the substrate including the organic film 131 and the first passivation film 129. ) Or silicon nitride (SiNx) is further formed.

A protective film 137 is disposed opposite to the front surface of the substrate including the second passivation film 133 for encapsulation of the organic light emitting diode. And a pressure sensitive adhesive 135 composed of any one of frit, organic insulating material and high molecular material having adhesive properties is interposed in complete contact with the substrate 101 and the barrier film 137 without an air layer. As the pressure sensitive adhesive 135, PSA (Press Sensitive Adhesive) may be used.

The organic light emitting diode display 100 according to the present invention is constructed by fixing the substrate 101 and the protective film 137 by the adhesive 135 to form a panel state.

5A and 5B are a plan view and a cross-sectional view illustrating a portion of an OLED display according to a second embodiment of the present invention. In the following description, the description of the same structure as the first embodiment described above is omitted for convenience of explanation.

3, 5A and 5B, the OLED display 200 according to the second embodiment of the present invention includes a display area A / A including a plurality of pixels PX, A thin film transistor T formed on each pixel PX on the substrate 201 and a thin film transistor formed on the substrate 201 including the thin film transistor T An anode electrode 217 formed on the planarization film 213 and connected to the drain electrode 211b of the thin film transistor T and a gate electrode 217 formed on the planarization film 213 to extend a part of the anode electrode 217 A second auxiliary electrode pattern 219b covering the first auxiliary electrode pattern 219a and the second source-drain auxiliary electrode pattern 211d so as not to be exposed and a second auxiliary electrode pattern 219b covering the second auxiliary electrode pattern 219b, A bank 223 formed around the pixel PX and a non-display area N / A, an organic light emitting layer 225 formed separately for each pixel PX on the anode electrode 217, and an organic light emitting layer 225 artillery A first passivation film 229 formed on the entire surface of the substrate 201 including the cathode electrode 227 and a second passivation film 229 formed on the first passivation film 229, A second passivation film 233 formed on the organic film 231 and the first passivation film 229, a protective film 237 facing the substrate 201, And a pressure sensitive adhesive 235 interposed between the protective films 237 to adhere the substrate 201 and the protective film 237 to form a panel state.

In particular, the second auxiliary electrode pattern 219b and the second source-drain auxiliary electrode pattern 207b are formed in a shape to be engaged with the irregularities so as to primarily block moisture flowing into the interface thereof. As a difference from the above-described first embodiment, the third auxiliary electrode pattern (119c in Fig. 4B) is omitted. 5A, when the boundary between the non-display area N / A and the display area A / A is viewed on a plane, the lower gate insulating film 205 is exposed (part B).

6A and 6B are a plan view and a cross-sectional view of a part of an OLED display according to a third embodiment of the present invention. In the following description, the same structures as those of the first and second embodiments described above will be omitted for convenience of explanation.

3, 6A, and 6B, an OLED display 300 according to a third exemplary embodiment of the present invention includes a display area A / A including a plurality of pixels PX, A thin film transistor T formed on each pixel PX on the substrate 301 and a thin film transistor T formed on the substrate 301 including the thin film transistor T An anode electrode 317 formed on the flattening film 313 and connected to the drain electrode 311b of the thin film transistor T and an anode electrode 317 connected to the drain electrode 311b of the thin film transistor T. A part of the anode electrode 317 is extended A second auxiliary electrode pattern 319b covering the first auxiliary electrode pattern 319a and the second source-drain auxiliary electrode pattern 311d so as not to be exposed, and a third auxiliary electrode pattern 319b patterned to block moisture introduced from the outside, A third source-drain auxiliary electrode 319c formed to overlap the pattern 319c and a lower portion of the third auxiliary electrode pattern 319c, A bank 323 formed around each pixel PX of the substrate 301 including the anode electrode 317 and the non-display region N / A, and a bank 323 formed around the anode electrode 317, A cathode electrode 327 formed on the entire surface of the substrate 301 including the organic light emitting layer 325 and an organic light emitting layer 325 formed on the entire surface of the substrate 301 including the cathode electrode 327. [ 1 passivation film 329, an organic film 331 formed on the first passivation film 329, a second passivation film 333 formed on the organic film 331 and the first passivation film 329, A protective film 337 facing the substrate 301 and an adhesive 335 interposed between the substrate 301 and the protective film 337 to adhere the substrate 301 and the protective film 337 to form a panel state, ).

Particularly, the second auxiliary electrode pattern 319b and the second source-drain auxiliary electrode pattern 307b are formed in a shape to be engaged with the irregularities to primarily block moisture flowing into the interface thereof. The third source-drain auxiliary electrode pattern 311e formed at the lower portion of the third auxiliary electrode pattern 319c having a slit shape differs from the first and second embodiments described above in that the gate- The second auxiliary electrode pattern 319b is formed to have a lattice shape when viewed from the top and to be exposed through the slits of the third auxiliary electrode pattern 319c through the contact hole (not shown) ).

Therefore, according to the organic electroluminescent device according to the first to third embodiments of the present invention, the moisture due to the extension line of the anode electrode and the source / drain electrode generated by omitting the conventional protective layer in the non-display area N / A The flow-in can be efficiently blocked, and the height difference of the bank does not occur compared with the conventional case.

Hereinafter, a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention will be described with reference to the drawings. In the following description, a method of manufacturing an organic light emitting display device with the sectional structure shown in the first embodiment is described, and the same applies to the second and third embodiments.

7A to 7G are views schematically showing a method of manufacturing an organic light emitting display according to the present invention.

As shown in Fig. 7A, a substrate 101 in which a display area A / A and a non-display area N / A surrounding the display area A / A are defined is prepared. Here, as the substrate 101, a plastic substrate having a flexible property can be used so that the display performance can be maintained even if the glass substrate or the display device of a rigid material is warped like paper.

Next, each pixel in the display area A / A is made of pure polysilicon. The central part of the pixel is a first region 103a forming the channel and a first region 103a doped with a high concentration of impurities And the semiconductor layer 103 composed of the two regions 103b and 103c is formed.

On the other hand, although not shown consisting of prior to, the substrate 101, for insulating material, for example, the inorganic insulating material is silicon oxide phase (SiO ₂₎ or silicon nitride (SiNx) is formed of the above-described semiconductor layer 103, buffer layer (not shown Can be formed. This buffer layer serves to prevent the deterioration of the characteristics of the semiconductor layer 103 due to the release of the alkali ions from the inside of the substrate 101 when the semiconductor layer 103 is crystallized.

Next, a gate insulating film 105 is formed on the buffer layer including the semiconductor layer 103 and a gate electrode 107 is formed on the gate insulating film 105 in correspondence with the first region 103a of the semiconductor layer 103 .

A gate wiring (not shown) extending in one direction is connected to the gate electrode 107 over the gate insulating film 105. In particular, a wiring for a gate driving circuit or a wiring for a gate driving circuit The ground wiring 107a is formed at the same time. In addition, the gate assistant electrode pattern 107b is formed in the non-display area N / A.

Then, the gate electrode 107 and the gate auxiliary electrode isolated in the substrate surface, including the pattern (107b) materials, such as a silicon oxide inorganic insulating material (SiO ₂₎ or silicon nitride (SiNx), as shown in Figure 7b The interlayer insulating film 109 is formed.

Next, the interlayer insulating film 109 and the gate insulating film 105 under the gate insulating film 105 are selectively patterned to expose each of the second regions 103b and 103c located on both sides of the first region 103a of the semiconductor layer, Thereby forming a contact hole (not shown).

Although not shown in the drawing, a metal material layer (not shown) is formed on the interlayer insulating film 109 including the semiconductor layer contact hole (not shown). At this time, the metal material layer (not shown) may be formed of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum, molybdenum, molybdenum, chromium, Or a combination thereof.

Then, the metal material layer is selectively patterned to form a data wiring (not shown), a data driving circuit wiring (not shown), and a power wiring (not shown) which intersect with the gate wiring and define pixels.

In addition, at the time of forming the data line, a source electrode (not shown) which is in contact with the second regions 103b and 103c exposed through the semiconductor layer contact hole to the upper portion of the interlayer insulating film 109 and is made of the same metal material as the data line 111a and the drain electrode 111b are simultaneously formed. Thus, the semiconductor layer 103, the gate insulating film 105, the gate electrode 107, the interlayer insulating film 109, and the source electrode 111a and the drain electrode 111b, which are formed apart from each other, .

At the same time, the first and second source-drain auxiliary electrode patterns 111c and 111d are formed over the display area A / A and the non-display area N / A. In particular, the second source-drain auxiliary electrode pattern 111d is brought into contact with the lower gate assist electrode 107b through the contact hole on the lower interlayer insulating film 109. [

Meanwhile, although the thin film transistor has the polysilicon semiconductor layer 103 and is configured as a top gate type, it may be a bottom gate type having a semiconductor layer of an amorphous silicon It is possible.

Next, a planarizing film 113 having a drain contact hole (not shown) for exposing the drain electrode 111b of the thin film transistor is formed. The planarizing layer 113 may be formed of an insulating material such as an inorganic insulating material including silicon oxide (SiO ₂ ) and silicon nitride (SiN x), or an organic insulating material containing photo- Or the like.

7C, the planarization film 113 is subjected to an exposure and development process and then selectively patterned to form a planarization film 113 corresponding to the display region of the substrate 101. In the planarization film 113, And the electrode 117 forms a drain contact hole for electrically contacting the drain electrode 111b.

Next, a metal material layer (not shown) is deposited on the entire surface of the substrate 101 including the planarization layer 113, and then the metal material layer is selectively patterned to be transferred to the upper portion of the planarization layer 113 through the drain contact hole The anode electrode 117 is formed in contact with the drain electrode 111b of the thin film transistor and has a shape separated for each pixel.

At the same time, the first to third auxiliary electrode patterns 119a, 119b, and 119c are formed over the display area A / A and the non-display area N / A using the metal material layer. The first auxiliary electrode pattern 119a is for lowering the resistance value of the cathode electrode 127 formed in the subsequent process to the upper portion of the planarization film 113. The first auxiliary electrode pattern 119a is electrically connected to the cathode electrode 127 . At this time, the metal material layer (not shown) may be formed of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum, molybdenum, molybdenum, chromium, And the like.

The second auxiliary electrode pattern 119b is formed to completely cover the second source-drain auxiliary electrode pattern 111d so that the second source-drain auxiliary electrode pattern 111d is not exposed upward, The partition wall 119c is formed in a slit shape on a plane so that the moisture introduced from the outside is prevented from penetrating into the display area N / A.

7D, a bank 123 made of an insulating material, particularly a polyimide, is formed on the boundary of the pixel and the non-display area NA above the anode electrode 117 do. At this time, the bank 123 is formed so as to overlap with the rim of the anode electrode 117 in the form of surrounding the pixel, and has a lattice shape having a plurality of openings as a whole in the display region A / A. Further, the bank 123 is also formed in the non-display area N / A, which is the panel outer frame.

7E, an organic light emitting layer 125 composed of an organic light emitting pattern (not shown) emitting red, green and blue light is formed on the anode electrode 117 in the pixel surrounded by the bank 123, . The organic light emitting layer 125 may be a single layer made of an organic light emitting material or may include a hole injection layer, a hole transporting layer, a light emitting material layer emitting material layer, an electron transporting layer, and an electron injection layer.

Next, a transparent conductive material layer (not shown) made of any one of transparent conductive materials including, for example, ITO and IZO is deposited on the entire surface of the substrate including the organic light emitting layer 125 and the banks 123, Thereby forming the cathode electrode 127 in the display area A / A of the substrate including the organic light emitting layer 125 and the bank 123. [ Accordingly, the organic light emitting layer 125 interposed between the anode electrode 117, the cathode electrode 127, and the two electrodes 117 and 127 forms an organic light emitting diode. Here, the cathode electrode 127 is electrically connected to the first auxiliary electrode pattern 119a.

7F, a first passivation film 129 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an insulating material, particularly an inorganic insulating material, is formed on the entire surface of the substrate including the cathode electrode 127, .

Next, as shown in FIG. 7G, an organic film 131 made of a polymer organic material such as a polymer is formed on the first passivation film 129. As the polymer thin film constituting the organic film 131, an olefin polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, Can be used.

Next, in order to prevent water from penetrating through the organic film 131 on the entire surface of the substrate 101 including the organic film 131 and the first passivation film 129, an insulating material, for example, an inorganic insulating material, to form additional silicon second passivation film 133 made of a (SiO ₂₎ or silicon nitride (SiNx).

Then, a protective film 137 is placed to face the entire surface of the substrate including the second passivation film 133 for encapsulation of the organic light emitting diode, and a transparent film is formed between the substrate 101 and the protective film 137 And a pressure sensitive adhesive (135) made of any one of frit, organic insulating material and high molecular material. Here, the pressure sensitive adhesive 135 is configured such that the substrate 101 and the protective film 137 are completely sealed without an air layer. As the pressure sensitive adhesive 135, PSA (Press Sensitive Adhesive) may be used.

The substrate 101 and the protective film 137 are fixed by the adhesive 135 to form a panel state, thereby completing the manufacturing process of the OLED display 100 according to the present invention.

Therefore, the organic light emitting display according to the present invention according to the above-described process can be manufactured without omitting the second auxiliary electrode pattern 119b on the second source-drain auxiliary electrode pattern 111d on the non-display area N / A Since the second auxiliary electrode pattern 119b and the anode electrode 117 are not connected to each other, the moisture introduced from the outside can be efficiently blocked, the height difference of the bank 123 layer is not generated, can do.

While a number of embodiments have been described in detail above, it should be construed as being illustrative of preferred embodiments rather than limiting the scope of the invention. Accordingly, the invention is not to be determined by the embodiments described, but should be determined by equivalents to the claims and the appended claims.

101: substrate 103: semiconductor layer
105: gate insulating film 107: gate electrode
107b: gate assist electrode pattern 109: interlayer insulating film
111a: source electrode 111b: drain electrode
111c and 111d: first and second source-drain auxiliary electrode patterns
113: planarization film 117: anode electrode
119a to 119c: first to third auxiliary electrode patterns
123: bank 125: organic light emitting layer
127: cathode electrode 129: first passivation film
131: organic film 133: second passivation film
135: Pressure sensitive adhesive 137: Protective film

Claims (14)

A substrate on which a display region including a plurality of pixels and a non-display region surrounding the display region are defined;
At least one thin film transistor formed in the pixel on the substrate;
A planarization film formed on the display region including the thin film transistor;
First and second source-drain auxiliary electrode patterns formed on the non-display area;
An anode electrode connected to a drain electrode of the thin film transistor;
A first auxiliary electrode pattern formed on the display region with the same material as the anode electrode, and a second auxiliary electrode pattern formed on the non-display region;
A bank formed in the periphery of each pixel region of the substrate including the anode electrode, the first and second auxiliary electrode patterns, and the non-display region;
An organic light emitting layer formed separately on the anode electrode for each pixel region;
A cathode electrode formed on the entire surface of the substrate including the organic light emitting layer;
A first passivation film formed on the entire surface of the substrate including the cathode electrode;
An organic film formed on the first passivation film;
A second passivation film formed on the organic film and the first passivation film;
A protective film facing the substrate; And
A pressure-sensitive adhesive interposed between the substrate and the protective film
And an organic light emitting diode (OLED). The method according to claim 1,
The first and second source-drain auxiliary electrode patterns are formed on the substrate,
And the gate electrode of the thin film transistor is electrically connected to the gate electrode of the thin film transistor through a gate auxiliary electrode made of the same material as the gate electrode of the thin film transistor. 3. The method of claim 2,
The second auxiliary electrode pattern may include a first electrode pattern,
And the second source-drain auxiliary electrode pattern is formed on the second source-drain auxiliary electrode pattern in a concavo-convex shape. The method of claim 3,
And a third auxiliary electrode pattern formed of the same material as the two auxiliary electrode patterns is further formed between the first and second source-drain auxiliary electrode patterns. 5. The method of claim 4,
The third auxiliary electrode pattern may be formed by patterning,
Wherein the organic light emitting display device has a slit shape in which a plurality of barrier ribs are formed in one direction. 5. The method of claim 4,
And a third source-drain auxiliary electrode pattern disposed between the first and second source-drain auxiliary electrode patterns so as to be offset from the third auxiliary electrode pattern. The method according to claim 6,
The third source-
And has a lattice shape when viewed in a plan view. Preparing a substrate on which a display region including a plurality of pixels and a non-display region surrounding the display region are defined;
Forming at least one thin film transistor in the pixel on the substrate;
Forming source and drain electrodes of the thin film transistor and the first and second source-drain auxiliary electrode patterns on the non-display region;
Forming an anode electrode connected to the drain electrode;
Forming a first auxiliary electrode pattern on the display region with the same material as the anode electrode and forming a second auxiliary electrode pattern on the non-display region;
Forming a planarization film on the display region including the thin film transistor;
Forming a bank in each of the pixel regions of the substrate including the anode electrode, the first and second auxiliary electrode patterns, and the non-display region;
Separating and forming an organic light emitting layer for each pixel region on the anode electrode;
Forming a cathode electrode on the entire surface of the substrate including the organic light emitting layer;
Forming a first passivation film on the entire surface of the substrate including the cathode electrode;
Forming an organic film on the first passivation film;
Forming a second passivation film on the organic film and the first passivation film; And
Attaching a protective film using an adhesive to face the substrate
Wherein the organic light emitting display device further comprises: 9. The method of claim 8,
The first and second source-drain auxiliary electrode patterns are formed on the substrate,
Wherein the gate electrode of the thin film transistor is electrically connected to the gate electrode of the thin film transistor through a gate auxiliary electrode made of the same material as the gate electrode of the thin film transistor. 10. The method of claim 9,
Wherein the forming of the second auxiliary electrode pattern comprises:
Wherein the second source-drain auxiliary electrode pattern is formed in a concavo-convex shape so as to be in contact with an upper portion of the second source-drain auxiliary electrode pattern. 11. The method of claim 10,
Wherein the forming of the first and second auxiliary electrode patterns comprises:
And forming a third auxiliary electrode pattern formed of the same material as the two auxiliary electrode patterns between the first and second source-drain auxiliary electrode patterns. . 12. The method of claim 11,
The third auxiliary electrode pattern may be formed by patterning,
Wherein a plurality of the barrier ribs are formed in a slit shape in one direction. 13. The method of claim 12,
Wherein forming the first and second source-drain auxiliary electrode patterns comprises:
And a third source-drain auxiliary electrode pattern disposed between the first and second source-drain auxiliary electrode patterns so as to be offset from the third auxiliary electrode pattern. Gt; 14. The method of claim 13,
The third source-
Wherein the organic light emitting display device has a lattice shape when viewed in a plan view.

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